STD86N3LH5
Automotive-grade N-channel 30 V, 0.0045 Ω typ, 80 A STripFET H5
Power MOSFET in a DPAK package
Datasheet - production data
Features
7$%
Order code
VDSS
RDS(on) max
ID
STD86N3LH5
30 V
< 0.005 Ω
80 A
• Designed for automotive applications and
AEC-Q101 qualified
• Low on-resistance RDS(on)
• High avalanche ruggedness
• Low gate drive power losses
'3$.
Application
• Switching applications
Figure 1. Internal schematic diagram
Description
This device is an N-channel Power MOSFET
developed using STMicroelectronics’ STripFET™
H5 technology. The device has been optimized to
achieve very low on-state resistance, contributing
to a FoM that is among the best in its class.
'7$%
*
6
$0YB7DE
Table 1. Device summary
Order code
Marking
Package
Packaging
STD86N3LH5
86N3LH5
DPAK
Tape and reel
May 2015
This is information on a product in full production.
DocID15575 Rev 3
1/17
www.st.com
Contents
STD86N3LH5
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuit
4
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
............................................... 8
DocID15575 Rev 3
STD86N3LH5
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0 V)
30
V
VDS
Drain-source voltage (VGS = 0 V) @ TJMAX
35
V
VGS
Gate-source voltage
± 20
V
ID (1)
Drain current (continuous) at TC = 25 °C
80
A
ID
Drain current (continuous) at TC = 100 °C
55
A
Drain current (pulsed)
320
A
Total dissipation at TC = 25 °C
70
W
Derating factor
0.47
W/°C
Single pulse avalanche energy
165
mJ
-55 to 175
°C
175
°C
Value
Unit
Thermal resistance junction-case max
2.14
°C/W
Thermal resistance junction-pcb max
50
°C/W
IDM
(2)
PTOT
EAS
(3)
Tstg
Storage temperature
Max. operating junction temperature
Tj
1. Limited by wire bonding
2. Pulse width limited by safe operating area
3. Starting Tj = 25°C, ID = 40 A, VDD = 25 V
Table 3. Thermal resistance
Symbol
Rthj-case
Rthj-pcb
(1)
Parameter
1. When mounted on 1 inch² FR-4 Oz Cu board
DocID15575 Rev 3
3/17
17
Electrical characteristics
2
STD86N3LH5
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Drain-source breakdown
Voltage
ID = 250 µA, VGS= 0 V
30
-
-
V
IDSS
Zero gate voltage drain
current (VGS = 0 V)
VDS = 20 V
VDS = 20 V,Tc = 125 °C
-
-
1
10
µA
µA
IGSS
Gate body leakage current
(VDS = 0 V)
VGS = ± 20 V
-
-
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
1
1.8
2.5
V
Static drain-source onresistance
VGS = 10 V, ID = 40 A
-
0.0045
0.005
RDS(on)
Ω
VGS = 5 V, ID = 40 A
-
0.0055 0.0065
Ω
V(BR)DSS
Table 5. Dynamic
Symbol
Test conditions
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
Qgs1
Pre Vth gate-to-source
charge
Qgs2
Post Vth gate-to-source
charge
RG
4/17
Parameter
Gate input resistance
VDS = 25 V, f=1 MHz,
VGS = 0 V
VDD = 15 V, ID = 80 A
VGS = 5 V
Figure 16
VDD = 15 V, ID = 80 A
VGS = 5 V
Figure 16
f = 1 MHz gate bias
Bias = 0 test signal
level = 20 mV, open drain
DocID15575 Rev 3
Min.
Typ.
Max.
Unit
-
1850
-
pF
-
380
-
pF
-
58
-
pF
-
14
-
nC
-
6.8
-
nC
-
4.7
-
nC
-
2.3
-
nC
-
4.5
-
nC
-
1.2
-
Ω
STD86N3LH5
Electrical characteristics
Table 6. Switching on/off (inductive load)
Symbol
td(on)
tr
td(off)
tf
Parameter
Test conditions
Turn-on delay time
VDD = 15 V, ID = 40 A,
RG = 4.7 Ω, VGS = 5 V
Figure 15
Rise time
Turn-off delay time
Fall time
Min.
Typ.
Max.
Unit
-
6
-
ns
-
14
-
ns
-
23.6
-
ns
-
10.8
-
ns
Min.
Typ.
Max.
Unit
-
80
320
A
A
1.1
V
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
Source-drain current
Source-drain current (pulsed)
VSD(2)
Forward on voltage
ISD = 40 A, VGS = 0
-
trr
Reverse recovery time
-
31.8
ns
Qrr
Reverse recovery charge
-
26.1
nC
IRRM
Reverse recovery current
ISD = 80 A,
di/dt = 100 A/µs,
VDD = 20 V
Figure 17
-
1.6
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID15575 Rev 3
5/17
17
Electrical characteristics
2.1
STD86N3LH5
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
Figure 4. Output characteristics
Figure 5. Transfer characteristics
Figure 6. Normalized BVDSS vs temperature
Figure 7. Static drain-source on resistance
AM03396v1
RDS(on)
(mΩ)
6.5
6.0
VGS=5V
5.5
5.0
VGS=10V
4.5
4.0
3.5
3.0
0
6/17
DocID15575 Rev 3
10
20 30 40
50 60
70 80 ID(A)
STD86N3LH5
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage vs
temperature
Figure 11. Normalized on resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics
DocID15575 Rev 3
7/17
17
Test circuit
3
STD86N3LH5
Test circuit
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
IG=CONST
VDD
VGS
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
Figure 15. Test circuit for inductive load
switching and diode recovery times
A
A
AM01469v1
Figure 16. Unclamped inductive load test circuit
L
A
D
G
D.U.T.
FAST
DIODE
B
B
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
8/17
0
DocID15575 Rev 3
10%
AM01473v1
STD86N3LH5
Test circuit
Figure 19. Gate charge waveform
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Qgd
DocID15575 Rev 3
9/17
17
Package information
4
STD86N3LH5
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
10/17
DocID15575 Rev 3
STD86N3LH5
Package information
Figure 20. DPAK (TO-252) type A2 outline
BW\SH$BUHY
DocID15575 Rev 3
11/17
17
Package information
STD86N3LH5
Table 8. DPAK (TO-252) type A2 mechanical data
mm
Dim.
Min.
Typ.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
D1
4.95
E
6.40
E1
5.10
5.20
5.30
e
2.16
2.28
2.40
e1
4.40
4.60
H
9.35
10.10
L
1.00
1.50
L1
2.60
2.80
3.00
L2
0.65
0.80
0.95
L4
0.60
5.10
V2
5.25
6.60
1.00
R
12/17
Max.
0.20
0°
8°
DocID15575 Rev 3
STD86N3LH5
Package information
Figure 21. DPAK (TO-252) footprint (a)
)3BB5
a. All dimensions are in millimeters
DocID15575 Rev 3
13/17
17
Packing information
5
STD86N3LH5
Packing information
Figure 22. Tape for DPAK (TO-252)
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
B1
K0
For machine ref. only
including draft and
radii concentric around B0
W
B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
14/17
DocID15575 Rev 3
STD86N3LH5
Packing information
Figure 23. Reel for DPAK (TO-252)
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
Full radius
G measured at hub
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
Table 9. DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
6.8
7
A
B0
10.4
10.6
B
1.5
12.1
C
12.8
1.6
D
20.2
G
16.4
50
B1
Min.
Max.
330
13.2
D
1.5
D1
1.5
E
1.65
1.85
N
F
7.4
7.6
T
K0
2.55
2.75
P0
3.9
4.1
Base qty.
2500
P1
7.9
8.1
Bulk qty.
2500
P2
1.9
2.1
R
40
T
0.25
0.35
W
15.7
16.3
DocID15575 Rev 3
18.4
22.4
15/17
17
Revision history
6
STD86N3LH5
Revision history
Table 10. Document revision history
16/17
Date
Revision
Changes
10-Apr-2009
1
First release.
22-Mar-2011
2
VGS value has been corrected in Table 2 and Table 4.
13-May-2015
3
Updated title, features and description in cover page.
Updated Section 4: Package information.
DocID15575 Rev 3
STD86N3LH5
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DocID15575 Rev 3
17/17
17
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