STD95N2LH5

STD95N2LH5 STP95N2LH5, STU95N2LH5 N-channel 25 V, 0.0038 Ω, 80 A, DPAK, IPAK, TO-220 STripFET™ V Power MOSFET Features Type VDSS RDS(on) max ID STD95N2LH5 25 V < 0.0045 Ω 80 A STP95N2LH5 25 V < 0.0049 Ω 80 A STU95N2LH5 25 V < 0.0049 Ω 80 A ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses 3 3 1 2 1 DPAK IPAK 3 1 2 TO-220 Application ■ Switching applications Figure 1. Internal schematic diagram Description $4!"OR This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM (figure of merit). ' 3 !-V Table 1. Device summary Order codes Marking Package Packaging STD95N2LH5 95N2LH5 DPAK Tape and reel STP95N2LH5 95N2LH5 TO-220 Tube STU95N2LH5 95N2LH5 IPAK Tube April 2010 Doc ID 13834 Rev 5 1/17 www.st.com 17 Contents STD95N2LH5, STP95N2LH5, STU95N2LH5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 .............................................. 9 Doc ID 13834 Rev 5 STD95N2LH5, STP95N2LH5, STU95N2LH5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit DPAK/IPAK TO-220 VDS Drain-source voltage (VGS=0) VGS Gate-Source voltage ID (1) Drain current (continuous) at TC = 25°C 80 ID Drain current (continuous) at TC = 100°C 67 Drain current (pulsed) 320 380 A Total dissipation at TC = 25°C 70 80 W IDM (2) PTOT EAS (3) Tj Tstg 25 V ± 22 V 95 A A Derating factor 0.47 W/°C Single pulse avalanche energy 165 mJ Operating junction temperature Storage temperature -55 to 175 °C 1. Limited by wire bonding 2. Pulse width limited by safe operating area 3. Starting Tj = 25°C, Id = 40 A, Vdd = 20 V Table 3. Symbol Thermal resistance Parameter Value Unit Rthj-case Thermal resistance junction-case max 2.14 °C/W Rthj-amb Thermal resistance junction-case max 100 °C/W Maximum lead temperature for soldering purpose 275 °C Tj Doc ID 13834 Rev 5 3/17 Electrical characteristics 2 STD95N2LH5, STP95N2LH5, STU95N2LH5 Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 4. Symbol Parameter Test conditions Drain-source breakdown Voltage ID = 250 µA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = 25 V VDS = 25 V,Tc = 125°C IGSS Gate body leakage current (VDS = 0) VGS = ± 22 V Gate threshold voltage VDS= VGS, ID = 250 µA V(BR)DSS VGS(th) RDS(on) Table 5. Symbol Static drain-source on resistance Min. Typ. 1 10 µA µA ±100 nA 1 V VGS= 10 V, ID= 40 A SMD version 0.0038 0.0045 Ω VGS= 10 V, ID= 40 A 0.0044 0.0049 Ω VGS= 5 V, ID= 40 A SMD version 0.005 0.006 Ω VGS= 5 V, ID= 40 A 0.006 0.007 Ω Min. Typ. Max. Unit - pF pF pF - nC nC nC Dynamic Parameter Test conditions VDS =25 V, f=1 MHz, VGS=0 - 1817 420 67 Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=13 V, ID = 80 A VGS =5 V Figure 18 - 13.4 6.7 4.1 Pre Vth gate-to-source charge Post Vth gate-to-source charge VDD=13 V, ID = 80 A Figure 21 - Gate input resistance f=1 MHz gate bias Bias= 0 test signal level=20 mV open drain - RG Unit V Input capacitance Output capacitance Reverse transfer capacitance Qgs2 Max. 25 Ciss Coss Crss Qgs1 4/17 Static Doc ID 13834 Rev 5 3.5 nC - 3.2 1.1 nC - Ω STD95N2LH5, STP95N2LH5, STU95N2LH5 Table 6. Symbol Electrical characteristics Switching on/off (inductive load) Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD=12.5 V, ID= 40 A, RG= 4.7 Ω, VGS= 10 V Figure 17 - 7 38 - ns ns td(off) tf Turn-off delay time Fall time VDD=12.5 V, ID= 40 A, RG= 4.7 Ω, VGS= 10 V Figure 17 - 22 7 - ns ns Min. Typ. Max. Unit - 80 320 A A 1.1 V Table 7. Symbol ISD ISDM (1) VSD(2) trr Qrr IRRM Source drain diode Parameter Test conditions Source-drain current Source-drain current (pulsed) Forward on voltage ISD= 35 A, VGS=0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, VDD= 20 V di/dt =100 A/µs, Figure 19 - 32.4 27.1 1.7 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 13834 Rev 5 5/17 Electrical characteristics STD95N2LH5, STP95N2LH5, STU95N2LH5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for DPAK, IPAK Figure 3. Thermal impedance for DPAK, IPAK Figure 4. Safe operating area for TO-220 Figure 5. Thermal impedance for TO-220 Figure 7. Transfer characteristics AM04907v1 n) (o S D O Li pe m ra ite tio d n by in m thi ax s a R re a is ID (A) 100 100µs 1ms 10ms 10 Tj=150°C Tc=25°C 1 Sinlge pulse 0.1 0.1 Figure 6. 6/17 1 10 100 Output characteristics VDS(V) Doc ID 13834 Rev 5 STD95N2LH5, STP95N2LH5, STU95N2LH5 Figure 8. Normalized BVDSS vs temperature Electrical characteristics Figure 9. Static drain-source on resistance Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on resistance vs temperature Doc ID 13834 Rev 5 7/17 Electrical characteristics STD95N2LH5, STP95N2LH5, STU95N2LH5 Figure 14. Source-drain diode forward characteristics 8/17 Doc ID 13834 Rev 5 STD95N2LH5, STP95N2LH5, STU95N2LH5 3 Test circuits Test circuits Figure 15. Unclamped inductive load test circuit Figure 16. Unclamped inductive waveform Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit Figure 19. Test circuit for inductive load Figure 20. Switching time waveform switching and diode recovery times Doc ID 13834 Rev 5 9/17 Test circuits STD95N2LH5, STP95N2LH5, STU95N2LH5 Figure 21. Gate charge waveform Id Vds Vgs Vgs(th) Qgs1 Qgs2 10/17 Qgd Doc ID 13834 Rev 5 STD95N2LH5, STP95N2LH5, STU95N2LH5 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 13834 Rev 5 11/17 Package mechanical data STD95N2LH5, STP95N2LH5, STU95N2LH5 TO-220 type A mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max 4.60 0.88 1.70 0.70 15.75 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 16.40 28.90 3.75 2.65 3.85 2.95 0015988_Rev_S 12/17 Doc ID 13834 Rev 5 STD95N2LH5, STP95N2LH5, STU95N2LH5 Package mechanical data TO-251 (IPAK) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 4.60 H 16.10 L 9.00 (L1) 0.80 9.40 1.20 L2 0.80 V1 10 o 0068771_H Doc ID 13834 Rev 5 13/17 Package mechanical data STD95N2LH5, STP95N2LH5, STU95N2LH5 TO-252 (DPAK) mechanical data DIM. mm. min. ty p ma x . A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4. 70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 1 R V2 0.20 8o 0o 0068772_G 14/17 Doc ID 13834 Rev 5 STD95N2LH5, STP95N2LH5, STU95N2LH5 5 Packaging mechanical data Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 B1 D 1.5 D1 1.5 E 1.65 MIN. 7.4 7.6 0.291 0.299 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 40 15.7 MIN. MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 0.059 F R MAX. MAX. K0 W inch 1.574 16.3 0.618 0.641 Doc ID 13834 Rev 5 15/17 Revision history 6 STD95N2LH5, STP95N2LH5, STU95N2LH5 Revision history Table 8. 29- 16/17 Document revision history Date Revision Changes 16-Oct-2007 1 First release 20-Feb-2008 2 Modified Table 4.: Static 23-Sep-2008 3 VGS value has been changed on Table 2 and Table 5 20-Apr-2009 4 Added device in TO-220 26-Apr-2010 5 – Table 1: Device summary has been corrected – Section 4: Package mechanical data has been updated Doc ID 13834 Rev 5 STD95N2LH5, STP95N2LH5, STU95N2LH5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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