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STD95N4F3

STD95N4F3

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOT428

  • 描述:

    N-Channel 40V 80A (Tc) 110W (Tc) Surface Mount D-Pak

  • 数据手册
  • 价格&库存
STD95N4F3 数据手册
STB95N4F3, STD95N4F3 STP95N4F3 N-channel 40 V, 5.0 mΩ, 80 A STripFET™ III Power MOSFET in D²PAK, DPAK, TO-220 Features Order codes VDSS RDS(on) max. Pw ID TAB TAB STB95N4F3 STD95N4F3 40 V STP95N4F3 < 5.8 m Ω 80 A TAB 110 W < 6.2 mΩ 3 1 ■ Standard threshold drive ■ 100% avalanche tested D²PAK 3 3 1 1 DPAK 2 TO-220 Applications ■ Switching applications – Automotive Figure 1. Internal schematic diagram Description $4!"OR These devices are N-channel enhancement mode Power MOSFETs produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance. ' 3 !-V Table 1. Device summary Order codes Marking Package STB95N4F3 95N4F3 D²PAK STD95N4F3 95N4F3 DPAK STP95N4F3 95N4F3 TO-220 Packaging Tape and reel December 2011 Doc ID 13288 Rev 4 Tube 1/20 www.st.com 20 Contents STB95N4F3, STD95N4F3, STP95N4F3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/20 .............................................. 8 Doc ID 13288 Rev 4 STB95N4F3, STD95N4F3, STP95N4F3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 40 V VGS Gate-source voltage ± 20 V Drain current (continuous) at TC = 25 °C 80 A Drain current (continuous) at TC = 100 °C 65 A Drain current (pulsed) 320 A Total dissipation at TC = 25 °C 110 W Derating factor 0.73 W/°C 8 V/ns Single pulse avalanche energy 400 mJ Operating junction temperature Storage temperature -55 to 175 °C ID (1) ID IDM (2) PTOT dv/dt (3) EAS (4) Tj Tstg Peak diode recovery voltage slope 1. Current limited by package. 2. Pulse width limited by safe operating area. 3. ISD ≤ 80 A, di/dt ≤ 400A/µs, VDS ≤ V(BR)DSS, Tj ≤ Tjmax. 4. Starting Tj = 25 °C, ID = 40 A, VDD = 30 V. Table 3. Thermal resistance Value Symbol Parameter Unit D²PAK Rthj-case Rthj-a Thermal resistance junction-case max Maximum lead temperature for soldering purpose TO-220 1.36 Thermal resistance junction-ambient max Rthj-pcb (1) Thermal resistance junction-ambient max Tl DPAK °C/W 62.5 30 50 °C/W °C/W 300 °C 1. When mounted on 1inch² FR-4 2Oz Cu board. Doc ID 13288 Rev 4 3/20 Electrical characteristics 2 STB95N4F3, STD95N4F3, STP95N4F3 Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 4. Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage ID = 250 µA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = 40 V, VDS = 40 V,Tc = 125 °C 10 100 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20 V ±200 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 4 V Static drain-source on resistance VGS= 10 V, ID= 40 A 5.0 5.8 mΩ RDS(on) VGS= 10 V, ID= 40 A for TO-220 5.4 6.2 mΩ V(BR)DSS Table 5. 4/20 Static 40 V 2 Dynamic Symbol Parameter Test conditions Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f=1 MHz, VGS=0 - 2200 580 40 Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=20 V, ID = 80 A VGS =10 V (see Figure 14) - 40 11 8 Doc ID 13288 Rev 4 Min. Typ. Max. Unit pF pF pF 54 nC nC nC STB95N4F3, STD95N4F3, STP95N4F3 Table 6. Symbol Electrical characteristics Switching on/off (inductive load) Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD=20 V, ID= 40 A, RG=4.7 Ω, VGS=10 V (see Figure 16) - 15 50 - ns ns td(off) tf Turn-off delay time Fall time VDD=20 V, ID= 40 A, RG=4.7 Ω, VGS=10 V (see Figure 16) - 40 15 - ns ns Min. Typ. Max. Unit - 80 320 A A - 1.5 V Table 7. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Source drain diode Parameter Test conditions Source-drain current Source-drain current (pulsed) Forward on voltage ISD=80 A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD=80 A, di/dt = 100 A/µs, VDD= 30 V, Tj=150 °C (see Figure 15) - 45 60 2.8 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 13288 Rev 4 5/20 Electrical characteristics STB95N4F3, STD95N4F3, STP95N4F3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Static drain-source on resistance Figure 7. Normalized BVDSS vs temperature HV29000 RDS(on) (mΩ) 6.5 ID=40A VGS=10V 6.0 5.5 TO-220 DPAK, D²PAK 5.0 4.5 0 6/20 20 40 60 80 ID(A) Doc ID 13288 Rev 4 STB95N4F3, STD95N4F3, STP95N4F3 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Capacitance variations Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Doc ID 13288 Rev 4 7/20 Test circuits 3 STB95N4F3, STD95N4F3, STP95N4F3 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/20 0 Doc ID 13288 Rev 4 10% AM01473v1 STB95N4F3, STD95N4F3, STP95N4F3 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 13288 Rev 4 9/20 Package mechanical data Table 8. STB95N4F3, STD95N4F3, STP95N4F3 D²PAK (TO-263) mechanical data mm Dim. Min. Typ. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 10/20 Max. 0.4 0° 8° Doc ID 13288 Rev 4 STB95N4F3, STD95N4F3, STP95N4F3 Package mechanical data Figure 19. D²PAK (TO-263) drawing 0079457_S Figure 20. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimension are in millimeters Doc ID 13288 Rev 4 11/20 Package mechanical data Table 9. STB95N4F3, STD95N4F3, STP95N4F3 DPAK (TO-252) mechanical data mm Dim. Min. Typ. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 1.50 L1 2.80 L2 0.80 L4 0.60 1 R V2 12/20 Max. 0.20 0° 8° Doc ID 13288 Rev 4 STB95N4F3, STD95N4F3, STP95N4F3 Package mechanical data Figure 21. DPAK (TO-252) drawing 0068772_H Figure 22. DPAK footprint(b) 6.7 1.8 3 1.6 2.3 6.7 2.3 1.6 AM08850v1 b. All dimension are in millimeters Doc ID 13288 Rev 4 13/20 Package mechanical data Table 10. STB95N4F3, STD95N4F3, STP95N4F3 TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 14/20 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 13288 Rev 4 STB95N4F3, STD95N4F3, STP95N4F3 Package mechanical data Figure 23. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 13288 Rev 4 15/20 Packaging mechanical data 5 STB95N4F3, STD95N4F3, STP95N4F3 Packaging mechanical data Table 11. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. 16/20 Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 Doc ID 13288 Rev 4 Min. Max. 330 13.2 26.4 30.4 STB95N4F3, STD95N4F3, STP95N4F3 Table 12. Packaging mechanical data DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 Doc ID 13288 Rev 4 18.4 22.4 17/20 Packaging mechanical data STB95N4F3, STD95N4F3, STP95N4F3 Figure 24. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F W K0 B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 25. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 18/20 Doc ID 13288 Rev 4 STB95N4F3, STD95N4F3, STP95N4F3 6 Revision history Revision history Table 13. Dcument revision history Date Revision 22-Feb-2007 1 First release 15-May-2007 2 Changes on applications 10-Sep-2009 3 Removed package, mechanical data: IPAK 13-Dec-2011 4 Changes New package and mechanical data have been added: – Table 8: D²PAK (TO-263) mechanical data, Figure 19: D²PAK (TO-263) drawing, Figure 20: D²PAK footprint Section 5: Packaging mechanical data has been updated: – Table 11: D²PAK (TO-263) tape and reel mechanical data, Figure 24: Tape, Figure 25: Reel. Minor text changes. Doc ID 13288 Rev 4 19/20 STB95N4F3, STD95N4F3, STP95N4F3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2011 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 20/20 Doc ID 13288 Rev 4
STD95N4F3 价格&库存

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