STDLED623

STDLED623, STULED623 N-channel 620 V, 3.0 Ω typ., 3.0 A Power MOSFET in DPAK and IPAK packages Datasheet - production data Features Order codes TAB TAB STDLED623 3 3 2 1 1 STULED623 RDS(on) max. 620 V < 3.6 Ω PTOT ID ) s ( ct 3.0 A 45 W u d o IPAK DPAK VDS • 100% avalanche tested • Extremely high dv/dt capability r P e • Very low intrinsic capacitance Figure 1. Internal schematic diagram D(2,TAB) ) (s t c u od t e l o t e l o • Zener-protected G(1) r P e • Improved diode reverse recovery characteristics • LED lighting applications Description These Power MOSFETs boast extremely low onresistance, superior dynamic performance and high avalanche capability, making them suitable for the buck-boost and flyback topology. S(3) s b O s b O Applications AM01476v1 Table 1. Device summary Order codes Marking Package Packaging DPAK Tape and reel IPAK Tube STDLED623 LED623 STULED623 September 2013 This is information on a product in full production. DocID025178 Rev 1 1/18 www.st.com 18 Contents STDLED623, STULED623 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ......................... 6 3 Test circuits .............................................. 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 2/18 DocID025178 Rev 1 STDLED623, STULED623 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 620 V VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 3.0 A ID Drain current (continuous) at TC = 100 °C 3.0 A Drain current (pulsed) 12 A Total dissipation at TC = 25 °C 45 IDM (1) PTOT IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max.) EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) dv/dt(2) e t e ol Peak diode recovery voltage slope VISO Tstg Storage temperature )- Tj s b O W du W/°C 85 kV 12 V/ns 0.36 o r P Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) ) s ( ct V -55 to 150 °C 150 °C Max. operating junction temperature s ( t c 1. Pulse width limited by safe operating area. 2. ISD ≤ 2.2 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS. u d o Pr Symbol e t e ol O bs Table 3. Thermal data Value Parameter Unit DPAK IPAK 6.25 Rthj-case Thermal resistance junction-case max. 2.78 Rthj-pcb(1) Thermal resistance junction-pcb max. 50 Rthj-amb Thermal resistance junction-amb max. °C/W °C/W 100 °C/W 1. When mounted on 1 inch² FR-4 board, 2 oz Cu. Table 4. Avalanche characteristics Symbol Parameter Max. value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max.) 2.7 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 100 mJ DocID025178 Rev 1 3/18 Electrical characteristics 2 STDLED623, STULED623 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On/off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 IDSS Zero gate voltage VDS = 620 V drain current (VGS = 0) VDS = 620 V, TC = 125 °C IGSS Gate-body leakage current (VDS = 0) Min. Typ. Max. 620 V 1 50 µA µA ± 10 µA 4.5 V 3 3.6 Ω Min. Typ. Max. Unit - 350 - pF - 27 - pF - 4.4 - pF ) s ( ct VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA RDS(on) Static drain-source onVGS = 10 V, ID = 1.1 A resistance e t e ol Unit du 3 o r P 3.6 Table 6. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Co(tr)(1) Equivalent capacitance time related VGS = 0, VDS = 0 to 496 V - 17 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 5 - Ω Qg Total gate charge - 15.5 - nC Qgs Gate-source charge - 3.2 - nC Qgd Gate-drain charge VDD = 496 V, ID = 2.7 A, VGS = 10 V (see Figure 16) - 9.8 - nC ) (s ct u d o r P e t e l o bs O 4/18 s b O Test conditions VDS = 50 V, f = 1 MHz, VGS = 0 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. DocID025178 Rev 1 STDLED623, STULED623 Electrical characteristics Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit - 8 - ns - 4.4 - ns - 21 - ns - 22 - ns Turn-on delay time td(on) tr VDD = 310 V, ID =1.1 A, RG = 4.7 Ω, VGS = 10 V (see Figure 15) Rise time td(off) Turn-off-delay time tf Fall time Table 8. Source-drain diode Symbol Test conditions (1) VSD(2) trr - ) s ( ct 8.8 A - 1.6 V Min. Source-drain current ISD ISDM Parameter Typ. - u d o Source-drain current (pulsed) Forward on voltage ISD = 2.2 A, VGS = 0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ) s ( ct e t e l Pr ISD = 2.2 A, di/dt = 100 A/µs VDD = 60 V (see Figure 20) o s b ISD = 2.2 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 20) -O Max. Unit 2.2 A - 200 ns - 900 nC - 9 A - 240 ns - 1150 nC - 10 A Min. Typ. 30 - 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. u d o e t e ol Pr Symbol BVGSO s b O Table 9. Gate-source Zener diode Parameter Test conditions Gate-source breakdown voltage IGS = ± 1 mA (open drain) Max. Unit - V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. DocID025178 Rev 1 5/18 Electrical characteristics 2.1 STDLED623, STULED623 Electrical characteristics (curves) Figure 2. Safe operating area for DPAK and IPAK Figure 3. Thermal impedance for DPAK and IPAK AM15326v1 ID (A) 10 ) D S( 1 on O Li per m at ite io d ni by n m this ax a R rea is 10µs 100µs 0.1 1ms ) s ( ct 10ms Tj=150°C Tc=25°C Single pulse 0.01 0.1 10 1 u d o Figure 4. Output characteristics Figure 5. Transfer characteristics AM09184v1 ID (A) ID (A) VGS=10V O ) 7V 4 t(s 3 uc od 1 0 0 ete 5 Pr 10 6V 15 O VGS (V) VDD=496V ID=2.2A 500 10 2.5 2.0 0 0 VDS(V) AM09186v1 VDS 12 3.0 0.5 Figure 6. Gate charge vs gate-source voltage bs VDS=15V 1.0 25 ol AM00889v1 1.5 5V 20 let o s b 3.5 5 2 r P e VDS(V) 100 400 8 1 2 3 4 5 6 7 8 9 VGS(V) Figure 7. Static drain-source on-resistance AM09187v1 RDS(on) (Ω) VGS=10V 3.3 3.2 3.1 300 6 3.0 200 4 100 2 0 0 6/18 5 10 15 0 Qg(nC) 2.9 2.8 2.7 0 DocID025178 Rev 1 0.5 1.0 1.5 2.0 ID(A) STDLED623, STULED623 Electrical characteristics Figure 8. Capacitance variations Figure 9. Output capacitance stored energy AM09188v1 C (pF) Ciss AM09189v1 Eoss (µJ) 2.5 100 2.0 1.0 10 Coss 0.5 Crss 1 0.1 1 100 10 0 0 VDS(V) Figure 10. Normalized gate threshold voltage vs temperature (norm) t e l o ID=50µA 1.10 2.5 1.00 VDS(V) AM09191v1 ID=1.1A VGS=10V s b O 2.0 0.95 )- 0.90 s ( t c 0.85 0.80 0.75 0.70 -75 -25 e t e l du o r P 25 75 so VSD (V) 1.5 1.0 0.5 0 -75 TJ(°C) 125 Figure 12. Source-drain diode forward characteristics b O u d o r P e RDS(on) (norm) 1.05 400 500 600 Figure 11. Normalized on-resistance vs temperature AM09190v1 VGS(th) 200 300 100 ) s ( ct AM09193v1 -25 25 75 125 TJ(°C) Figure 13. Maximum avalanche energy vs temperature AM09192v1 BVDSS (norm) TJ=-50°C ID=1mA 0.9 1.10 TJ=25°C 0.8 0.7 0.6 1.05 TJ=150°C 0.5 0.4 1.00 0.3 0.95 0.2 0.1 0 0 1 2 3 4 5 ISD(A) 0.90 -75 DocID025178 Rev 1 -25 25 75 125 TJ(°C) 7/18 Electrical characteristics STDLED623, STULED623 Figure 14. Maximum avalanche energy vs starting Tj AM09180v1 EAS (mJ) 90 ID=2.2 A VDD=50 V 80 70 60 50 40 30 ) s ( ct 20 10 0 0 20 60 40 u d o 100 120 140 TJ(°C) 80 r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 8/18 DocID025178 Rev 1 STDLED623, STULED623 3 Test circuits Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. VG c u d 47kΩ 1kΩ AM01468v1 e t e ol Figure 17. Test circuit for inductive load switching and diode recovery times A A G D.U.T. FAST DIODE B B S s ( t c 3.3 μF B 25 Ω D RG so 1000 μF r P e S AM01469v1 L VD 2200 μF 3.3 μF VDD ID Vi D.U.T. Pw AM01470v1 Figure 19. Unclamped inductive waveform b O s b O VDD u d o G let )- L=100μH o r P Figure 18. Unclamped Inductive load test circuit A D ) s ( t 2.7kΩ PW PW D.U.T. AM01471v1 Figure 20. Switching time waveform DocID025178 Rev 1 9/18 Package mechanical data 4 STDLED623, STULED623 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Table 10. DPAK (TO-252) mechanical data mm Dim. Min. 2.40 A1 0.90 1.10 A2 0.03 b 0.64 b4 5.20 c 0.45 c2 0.48 D 6.00 6.40 u d o 0.23 e t e l o s b ) s ( ct E1 e u d o e1 Pr H b O 10/18 ) s ( ct 2.20 E so Max. A D1 e t e l Typ. L -O 5.40 0.60 0.60 6.20 6.60 4.70 2.28 4.40 4.60 9.35 10.10 1.00 1.50 2.80 L2 0.80 0.60 1.00 R V2 0.90 5.10 (L1) L4 Pr 0.20 0° 8° DocID025178 Rev 1 STDLED623, STULED623 Package mechanical data Figure 21. DPAK (TO-252) drawings ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 0068772_K DocID025178 Rev 1 11/18 Package mechanical data STDLED623, STULED623 Figure 22. DPAK footprint (a) ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O a. All dimensions are in millimeters. 12/18 DocID025178 Rev 1 Footprint_REV_K STDLED623, STULED623 Package mechanical data Table 11. IPAK (TO-251) mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 B5 ) s ( ct 0.30 c 0.45 c2 0.48 D 6.00 E 6.40 0.60 du e t e ol e 2.28 e1 4.40 H L 9.00 L1 )0.80 L2 s b O s ( t c V1 o r P 0.60 6.20 6.60 4.60 16.10 9.40 1.20 0.80 1.00 10° u d o r P e t e l o s b O DocID025178 Rev 1 13/18 Package mechanical data STDLED623, STULED623 Figure 23. IPAK (TO-251) drawings ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 14/18 0068771_K DocID025178 Rev 1 STDLED623, STULED623 5 Packaging mechanical data Packaging mechanical data Table 12. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 B1 Min. D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 P1 7.9 8.1 P2 1.9 2.1 R 40 T 0.25 W 15.7 t c u ) (s 330 ) s ( ct 13.2 u d o r P e 50 t e l o s b O Max. 18.4 22.4 Base qty. 2500 Bulk qty. 2500 0.35 16.3 d o r P e t e l o s b O DocID025178 Rev 1 15/18 Packaging mechanical data STDLED623, STULED623 Figure 24. Tape for DPAK (TO-252) 10 pitches cumulative tolerance on tape +/- 0.2 mm P0 Top cover tape T P2 D E F B1 W K0 B0 For machine ref. only including draft and radii concentric around B0 A0 D1 P1 ) s ( ct User direction of feed u d o r P e let o s b O ) s ( t c u d o Bending radius User direction of feed AM08852v1 Figure 25. Reel for DPAK (TO-252) T r P e REEL DIMENSIONS 40mm min. t e l o s b O R Access hole At slot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 16/18 DocID025178 Rev 1 STDLED623, STULED623 6 Revision history Revision history Table 13. Document revision history Date Revision 03-Sep-2013 1 Changes First release. ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O DocID025178 Rev 1 17/18 STDLED623, STULED623 ) s ( ct Please Read Carefully: u d o Information in this document is provided solely in connection with ST products. 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