STDLED627

STBLED627, STDLED627 N-channel 620 V, 0.95 Ω, 7.0 A Power MOSFET in D2PAK and in DPAK Datasheet - production data Features TAB Order codes TAB STBLED627 3 1 3 STDLED627 DPAK 1 VDSS RDS(on) max. ID Pw 620 V < 1.2 Ω 7.0 A 90 W • 100% avalanche tested D²PAK • Extremely high dv/dt capability • Gate charge minimized Figure 1. Internal schematic diagram D(2,TAB) • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • LED lighting applications G(1) Description S(3) AM01476v1 These Power MOSFETs boast extremely low on resistance and very good dv/dt capability, rendering them suitable for buck-boost and fyback topologies. Table 1. Device summary Order codes Marking Package Packaging LED627 D²PAK DPAK Tape and reel STBLED627 STDLED627 August 2013 This is information on a product in full production. DocID025173 Rev 1 1/18 www.st.com 18 Contents STBLED627, STDLED627 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ......................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 .............................................. 9 DocID025173 Rev 1 STBLED627, STDLED627 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit D²PAK DPAK VDS Drain-source voltage 620 V VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 7.0 A ID Drain current (continuous) at TC = 100 °C 4.0 A Drain current (pulsed) 28 A PTOT Total dissipation at TC = 25 °C 90 W IAR(2) Avalanche current, repetitive or not-repetitive 5.5 A Single pulse avalanche energy 140 mJ Gate-source human body model (R =1.5 kΩ, C = 100 pF) 2.5 kV Peak diode recovery voltage slope 12 V/ns -55 to 150 °C 150 °C IDM (1) (3) EAS ESD dv/dt(4) Tstg Tj Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area. 2. Pulse width limited by Tj max. 3. Starting Tj = 25 °C, ID = IAR, VDD = 50 V. 4. ISD ≤ 5.5 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS. Table 3. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max. Rthj-pcb(1) Thermal resistance junction-pcb max. D²PAK DPAK 1.39 30 Unit °C/W 50 °C/W 1. When mounted on 1inch² FR-4 board, 2 oz Cu. DocID025173 Rev 1 3/18 Electrical characteristics 2 STBLED627, STDLED627 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. On/off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 Min. Typ. Max. 620 Unit V IDSS Zero gate voltage VDS = 620 V drain current (VGS = 0) VDS = 620 V, TC = 125 °C 0.8 50 µA µA IGSS Gate-body leakage current (VDS = 0) ±9 µA 3.6 4.5 V 0.95 1.2 Ω Min. Typ. Max. Unit - 890 - pF pF pF - 110 - - 18 - - 28 - pF - 63 - pF - 3.5 - Ω - 35 - nC - 4.5 - nC - 23 - nC VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA RDS(on) Static drain-source onVGS = 10 V, ID = 2.8 A resistance 3 Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Test conditions VDS = 50 V, f = 1 MHz, VGS = 0 Equivalent output Coss(er)(1) capacitance energy related Coss(tr)(2) Equivalent output capacitance time related RG Intrinsic gate resistance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VGS = 0, VDS = 0 to 480 V f = 1 MHz open drain VDD = 496 V, ID = 5.5 A, VGS = 10 V (see Figure 18) 1. It is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 2. It is defined as a constant equivalent capacitance giving the same storage energy as Coss when VDS increases from 0 to 80% VDSS. 4/18 DocID025173 Rev 1 STBLED627, STDLED627 Electrical characteristics Table 6. Switching times Symbol td(on) tr Parameter Test conditions tf Typ. Max. Unit - 22 - ns - 12 - ns - 49 - ns - 20 - ns Turn-on delay time VDD = 310 V, ID = 2.75 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17) Rise time td(off) Min. Turn-off-delay time Fall time Table 7. Source-drain diode Symbol ISD Test conditions Source-drain current Source-drain current (pulsed) (2) Forward on voltage trr Min. Typ. Max. Unit - (1) ISDM VSD Parameter ISD = 5.5 A, VGS = 0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRR Reverse recovery current ISD = 5.5 A, di/dt = 100 A/µs VDD = 60 V (see Figure 22) ISD = 5.5 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 22) - 5.5 A 27 A 1.5 V - 290 ns - 1900 nC - 13.5 A - 335 ns - 2400 nC - 14.5 A Min. Typ. 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%. Table 8. Gate-source Zener diode Symbol V(BR)GSO Parameter Test conditions Gate-source breakdown voltage (ID = 0) Igs = ± 1 mA 30 Max. Unit - V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. DocID025173 Rev 1 5/18 Electrical characteristics 2.1 STBLED627, STDLED627 Electrical characteristics (curves) Figure 2. Safe operating area for D²PAK Figure 3. Thermal impedance for D²PAK AM09051v1 ID (A) Tj=150°C Tc=25°C Single pulse 10 n) 100µs S( o Op Lim era ite tion d b in y m this ax ar RD ea is 10µs 1 0.1 0.1 1ms 10ms 10 1 100 VDS(V) Figure 4. Safe operating area for DPAK Figure 5. Thermal impedance for DPAK AM09052v1 ID (A) Tj=150°C Tc=25°C Single pulse 10 ai (o 100µs DS Op Lim era ite tion d b in y m this ax ar R e n) s 10µs 1 0.1 0.1 1ms 10ms 10 1 100 VDS(V) Figure 6. Output characteristics Figure 7. Transfer characteristics AM09054v1 ID (A) 3.5 AM09055v1 ID (A) 8 VGS=10V VDS=15V 7 3.0 6V 2.5 6 5 2.0 4 1.5 3 1.0 2 0.5 0 0 6/18 1 4V 1 2 VDS(V) DocID025173 Rev 1 0 0 2 4 6 8 10 VGS(V) STBLED627, STDLED627 Electrical characteristics Figure 8. Gate charge vs gate-source voltage AM09057v1 VGS (V) VDS(V) VDD=496V ID=5.5A 12 500 Figure 9. Static drain-source on-resistance AM09056v1 RDS(on) (Ω) VGS=10V 1.15 VDS 1.10 10 400 8 1.05 300 1.00 6 200 4 100 2 0 0 20 10 30 0 Qg(nC) Figure 10. Capacitance variations 0.90 0.85 0 1 2 3 5 4 6 ID(A) Figure 11. Output capacitance stored energy AM09058v1 C (pF) 0.95 AM09059v1 Eoss (µJ) 5 1000 Ciss 4 100 3 Coss 10 2 Crss 1 1 0.1 1 100 10 Figure 12. Normalized gate threshold voltage vs temperature AM09061v1 VGS(th) (norm) 0 0 VDS(V) 100 200 300 400 500 VDS(V) Figure 13. Normalized on-resistance vs temperature AM09062v1 RDS(on) (norm) ID=50µA 1.10 ID=2.8A VGS=10A 2.5 1.00 2.0 1.5 0.90 1.0 0.80 0.5 0.70 -75 -25 25 75 125 TJ(°C) 0.0 -75 DocID025173 Rev 1 -25 25 75 125 TJ(°C) 7/18 Electrical characteristics STBLED627, STDLED627 Figure 14. Normalized BVDSS vs temperature AM09060v1 BVDSS (norm) Figure 15. Source-drain diode forward characteristics AM09063v1 VSD (V) TJ=-50°C ID=1mA 1.0 1.10 TJ=25°C 0.8 1.05 0.6 1.00 TJ=150°C 0.4 0.95 0.90 -75 0.2 25 -25 75 125 TJ(°C) Figure 16. Maximum avalanche energy vs temperature AM09064v1 EAS (mJ) 160 ID=5.5 A VDD=50 V 140 120 100 80 60 40 20 0 0 8/18 20 40 60 80 100 120 140 TJ(°C) DocID025173 Rev 1 0 0 1 2 3 4 5 6 ISD(A) STBLED627, STDLED627 3 Test circuits Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 19. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 20. Unclamped Inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 DocID025173 Rev 1 10% AM01473v1 9/18 Package mechanical data 4 STBLED627, STDLED627 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 9. D²PAK (TO-263) mechanical data mm Dim. Min. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 10/18 Typ. 0.4 0° 8° DocID025173 Rev 1 STBLED627, STDLED627 Package mechanical data Figure 23. D²PAK (TO-263) drawings 0079457_S Figure 24. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimensions are in millimeters. DocID025173 Rev 1 11/18 Package mechanical data STBLED627, STDLED627 Table 10. DPAK (TO-252) mechanical data mm Dim. Min. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 1.50 L1 2.80 L2 0.80 L4 0.60 1 R V2 12/18 Typ. 0.20 0° 8° DocID025173 Rev 1 STBLED627, STDLED627 Package mechanical data Figure 25. DPAK (TO-252) drawings 0068772_H Figure 26. DPAK footprint(b) 6.7 1.8 3 1.6 2.3 6.7 2.3 1.6 AM08850v1 b. All dimensions are in millimeters. DocID025173 Rev 1 13/18 Packaging mechanical data 5 STBLED627, STDLED627 Packaging mechanical data Table 11. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. 14/18 Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID025173 Rev 1 Min. Max. 330 13.2 26.4 30.4 STBLED627, STDLED627 Packaging mechanical data Table 12. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DocID025173 Rev 1 18.4 22.4 15/18 Packaging mechanical data STBLED627, STDLED627 Figure 27. Tape for DPAK (TO-252) and D²PAK (TO-263) 10 pitches cumulative tolerance on tape +/- 0.2 mm P0 Top cover tape T P2 D E F B1 W K0 B0 For machine ref. only including draft and radii concentric around B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 Figure 28. Reel for DPAK (TO-252) and D²PAK (TO-263) T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 16/18 DocID025173 Rev 1 STBLED627, STDLED627 6 Revision history Revision history Table 13. Document revision history Date Revision 29-Aug-2013 1 Changes First release. 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