STE26NA90

STE26NA90  N - CHANNEL 900V - 0.25Ω - 26A - ISOTOP FAST POWER MOSFET TYPE STE26NA90 ■ ■ ■ ■ ■ ■ V DSS R DS(on) ID 900 V < 0.3 Ω 26 A TYPICAL RDS(on) = 0.25 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD c u d APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLY (SMPS) ■ DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVE ISOTOP e t le ) s t( o r P INTERNAL SCHEMATIC DIAGRAM o s b O - ) s ( ct u d o r P e ABSOLUTE MAXIMUM RATINGS t e l o Symb ol V DS s b O V DGR V GS Value Un it Drain-source Voltage (V GS = 0) Parameter 900 V Drain- gate Voltage (R GS = 20 kΩ) 900 V ± 30 V G ate-source Voltage o ID Drain Current (continuous) at Tc = 25 C 26 A ID Drain Current (continuous) at Tc = 100 C 16.2 A Drain Current (pulsed) 104 A T otal Dissipation at Tc = 25 C 450 W Derating Factor 3.6 W /o C I DM (•) P tot T s tg Tj V ISO o o -55 to 150 o C Max. Operating Junction Temperature 150 o C Insulation Withstand Voltage (AC-RMS) 2500 Storage T emperature V (•) Pulse width limited by safe operating area October 1998 1/8 STE26NA90 THERMAL DATA R thj -case R thc-h Thermal Resistance Junction-case Thermal Resistance Case-heatsink With Conductive Grease Applied Max 0.27 o C/W Max 0.05 o C/W AVALANCHE CHARACTERISTICS Symbo l Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) E AS Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 50 V) Max Value Unit 13 A 3000 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS Parameter Test Con ditions Drain-source Breakdown Voltage I D = 500 µA Min. V GS = 0 I DSS V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) 900 T c = 125 oC V GS = ± 30 V e t le ON (∗) Symbo l Parameter so Test Con ditions b O - V GS(th) Gate Threshold Voltage V DS = V GS R DS(on) Static Drain-source On Resistance V GS = 10 V I D(o n) On State Drain Current V DS > ID(o n) x R DS(on )ma x V GS = 10 V DYNAMIC o r P e Symbo l g f s (∗) Parameter s b O 2/8 I D = 1 mA V DS > ID(o n) x R DS(on )ma x Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz ) s t( Max. c u d o r P µA µA ± 200 nA Typ. Max. Unit 2.25 3 3.75 V 0.25 0.3 Ω Min. V GS = 0 V 250 1000 26 I D = 13 A Unit Min. I D = 13 A Test Con ditions Forward Transconductance t e l o C iss C os s C rss c u d (t s) Typ. A Typ. Max. 15 Unit S 13600 1130 270 17700 1470 350 pF pF pF STE26NA90 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Typ. Max. Unit t d(on) tr Turn-on Time Rise Time Parameter V DD = 450 V I D = 12 A R G = 4.7 Ω V GS = 10 V (see test circuit, figure 3) Test Con ditions Min. 40 52 56 73 ns ns Qg Q gs Q gd Total G ate Charge Gate-Source Charge Gate-Drain Charge V DD = 720 V I D = 26 A V GS = 10 V 470 43 226 660 nC nC nC Typ. Max. Unit 108 25 145 152 35 203 ns ns ns SWITCHING OFF Symbo l tr (Voff) tf tc Parameter Off-voltage Rise T ime Fall T ime Cross-over Time Test Con ditions Min. V DD = 720 V I D = 26 A V GS = 10 V R G = 4.7 Ω (see test circuit, figure 5) SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions Min. ISD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 26 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 26 A di/dt = 100 A/µs o T j = 150 C V DD = 100 V (see test circuit, figure 5) t rr Q rr I RRM so ) s ( ct (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area u d o r P e Safe Operating Area e t le V GS = 0 b O - c u d Typ. o r P ) s t( Max. Unit 26 104 A A 1.6 V 1.3 µs 38 µC 58 A Thermal Impedance t e l o s b O 3/8 STE26NA90 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance c u d e t le ) s ( ct u d o r P e Gate Charge vs Gate-source Voltage t e l o s b O 4/8 o r P o s b O - Capacitance Variations ) s t( STE26NA90 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o s b O 5/8 STE26NA90 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit c u d e t le ) s ( ct u d o r P e o s b O - Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times t e l o s b O 6/8 o r P ) s t( STE26NA90 ISOTOP MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 11.8 12.2 0.466 0.480 B 8.9 9.1 0.350 0.358 C 1.95 2.05 0.076 0.080 D 0.75 0.85 0.029 0.033 E 12.6 12.8 0.496 0.503 F 25.15 25.5 0.990 1.003 G 31.5 31.7 1.240 1.248 H 4 0.157 J 4.1 4.3 0.161 K 14.9 15.1 0.586 ) s t( L 30.1 30.3 1.185 M 37.8 38.2 1.488 N 4 O 7.8 0.169 0.157 e t le 8.2 G ) s ( ct O od 0.307 o s b O - 0.594 1.193 1.503 0.322 A B H s b O F D t e l o E u d o r P e N Pr uc J C K L M 7/8 STE26NA90 c u d e t le ) s ( ct ) s t( o r P o s b O - u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics  1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 8/8