STE40NC60

STE40NC60 N-CHANNEL 600V - 0.098Ω - 40A ISOTOP PowerMesh™II MOSFET TYPE STE40NC60 n n n n n VDSS RDS(on) ID 600V < 0.13Ω 40 A TYPICAL RDS(on) = 0.098 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ISOTOP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING n SWITH MODE POWER SUPPLIES (SMPS) n DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER n ABSOLUTE MAXIMUM RATINGS Symbol Value Unit Drain-source Voltage (VGS = 0) 600 V Drain-gate Voltage (RGS = 20 kΩ) 600 V Gate- source Voltage ±30 V ID Drain Current (continuos) at TC = 25°C 40 A ID Drain Current (continuos) at TC = 100°C 23 A VDS VDGR VGS IDM (l) PTOT dv/dt (1) Parameter Drain Current (pulsed) 160 A Total Dissipation at TC = 25°C 460 W Derating Factor 3.68 W/°C Peak Diode Recovery voltage slope VISO Insulation Winthstand Voltage (AC-RMS) Tstg Storage Temperature Tj Max. Operating Junction Temperature (•)Pulse width limited by safe operating area May 2002 3 V/ns 2500 V –65 to 150 °C 150 °C (1) ISD≤ 40A, di/dt≤100 A/µs, VDD≤ 24V, Tj≤TjMAX 1/8 STE40NC60 THERMAL DATA Rthj-case Rthc-h Thermal Resistance Junction-case Max 0.272 °C/W Thermal Resistance Case-heatsink with Conductive Grease Applied 0.05 °C/W AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value Unit 40 A 1150 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Min. Typ. Max. 600 Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 V Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 10 µA VDS = Max Rating, TC = 125 °C 100 µA Gate-body Leakage Current (VDS = 0) VGS = ± 30V ±100 nA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 20A Min. Typ. Max. Unit 2 3 4 V 0.098 0.130 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) Parameter Forward Transconductance Test Conditions VDS > ID(on) x RDS(on)max, ID = 15 A VDS = 25V, f = 1 MHz, VGS = 0 42 S 11.1 nF Ciss Input Capacitance Coss Output Capacitance 1190 pF Crss Reverse Transfer Capacitance 100 pF Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2/8 Min. STE40NC60 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. VDD = 300 V, ID = 20 A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD = 480V, ID = 40A, VGS = 10V Typ. Max. Unit 49 ns 42 ns 307.5 430 nC 48 nC 146.5 nC SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. VDD = 480V, ID = 40A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Typ. Max. Unit 41 ns 26 ns 74 ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Source-drain Current ISDM (2) Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 40A, VGS = 0 ISD = 40 A, di/dt = 100 A/µs, VDD = 40 V, Tj = 150 °C (see test circuit, Figure 5) trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current Max. Unit 40 A 160 A 1.6 V 685 ns 15 µC 44 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedence 3/8 STE40NC60 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STE40NC60 Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STE40NC60 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STE40NC60 ISOTOP MECHANICAL DATA mm DIM. MIN. A TYP. 11.8 inch MAX. MIN. TYP. MAX. 12.2 0.466 0.480 B 8.9 9.1 0.350 0.358 C 1.95 2.05 0.076 0.080 D 0.75 0.85 0.029 0.033 E 12.6 12.8 0.496 0.503 F 25.15 25.5 0.990 1.003 G 31.5 31.7 1.240 1.248 H 4 J 4.1 4.3 0.161 0.169 K 14.9 15.1 0.586 0.594 L 30.1 30.3 1.185 1.193 M 37.8 38.2 1.488 1.503 8.2 0.307 0.157 N 4 O 7.8 0.157 0.322 A G B O F E H D N J K C L M 7/8 STE40NC60 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 8/8