STE50DE100

STE50DE100 Hybrid Emitter Switched Bipolar Transistor ESBT® 1000 V - 50 A - 0.026 Ω General features VCS(ON) IC 1.3 V 50 A RCS(ON) 0.026 ■ High voltage / high current Cascode configuration ■ Ultra low equivalent on resistance ■ Very fast-switch up to 150 kHz ■ Ultra low Ciss ■ Low dynamic VCS(ON) W ISOTOP Applications ■ Industrial converters ■ Welding ) s t( Description c u d Internal schematicodiagrams r P e t le o s b -O The STE50DE100 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. ) s ( ct The STE50DE100 is designed for use in industrial converters and/or welding equipment. u d o r P e t e l ocodes Order s b O Part Number Marking Package Packing STE50DE100 STE50DE100 ISOTOP Tube January 2007 Rev 2 1/11 www.st.com 11 STE50DE100 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 5 2.2 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 c u d e t le ) s ( ct u d o r P e t e l o s b O 2/11 o s b O - o r P ) s t( STE50DE100 Electrical ratings Electrical ratings 1 Table 1. Absolute maximum rating Symbol Parameter Value Unit 1000 V VCS(SS) Collector-source voltage (V BS = VGS = 0 V) VBS(OS) Base-source voltage (IC = 0, V GS = 0 V) 40 V VSB(OS) Source-base voltage (IC = 0, V GS = 0 V) 12 V ± 20 V Collector current 50 A Collector peak current (tP < 5ms) 150 A Base current 10 A IBM Base peak current (tP < 5ms) 50 Ptot Total dissipation at T c = 25°C 160 VINS Insulation withstand voltage (AC-RMS) from all four leads to external heatsink Tstg Storage temperature VGS IC ICM IB TJ Table 2. Gate-source voltage Max. operating junction temperature r P e t le Thermal data o s b O - Symbol Parameter Rthj-case Thermal resistance junction-case __max Thermal resistance case-heatsink with conductive grease applied __max Rthc-h t c u (s) uc od ) s t( A W 2500 V -40 to 150 °C 150 °C Value Unit 0.78 0.05 °C/W °C/W d o r P e t e l o s b O 3/11 Electrical characteristics 2 STE50DE100 Electrical characteristics (Tcase = 25°C unless otherwise specified) Table 3. Electrical characteristics Symbol Parameter ICS(SS) Collector-source current (VBS = V GS = 0) VCE = 1000V 100 µA IBS(OS) Base-source current (IC = 0, VGS = 0) VBS(OS) = 40V 10 µA ISB(OS) Source-base current (IC = 0, VGS = 0) VSB(OS) = 10V 100 µA IGS(OS) Gate-source leakage VGS = ± 20V 500 nA VCS(ON) Collector-source ON voltage VGS = 10V IC = 50A IB = 10A VGS = 10V_IC = 30A IB = 3A hFE VBS(ON) VGS(th) CISS QGS(tot) ts tf t e l o bs O tf VCSW VCS(dyn) VCS(dyn) 4/11 Min. VGS = 10V_IC = 50A VCS = 1V DC current gain Gate threshold voltage Input capacitance (s) Gate-source charge t c u INDUCTIVE LOAD Storage time Fall time od INDUCTIVE LOAD Storage time Fall time Maximum collectorsource voltage switched without snubber VGS = 10V_ IC = 50A c u d e t le VGS = 10V_ IC = 30A_ IB = 3A o s b O - 3 VCS = 25V ______f = 1MHz VGS = VCB = 0 VCS = 25V _____VGS = 10V VCB = 0 IC = 50A IC = 25A IB = 5A VGS = 10V VClamp = 800V tp = 4µs RG = 47Ω (see figure 13) IC = 25A IB = 2.5A VGS = 10V VClamp = 800V RG = 47Ω tp = 4µs (see figure 13) RG = 47Ω hFE = 5A IC = 35A Collector-source dynamic voltage (500ns) VCC = VClamp = 300V V GS = 10V RG = 47Ω IC = 5A IB = 5A Collector-source dynamic voltage VCC = VClamp = 300V V GS = 10V (1 µs) 3 6 IB = 10A VBS = VGS ______IB = 250µA IBpeak = IC = 25A RG = 47Ω ) s t( V V 7 13 2.2 1.4 3.7 V V 4.5 V 2500 pF 60 nC 650 ns 10 ns 430 ns 6 ns 1000 V 5.5 V 4.8 V tpeak = 500ns IC = 5A IBpeak = IC = 25A Typ. Max. Unit 1.3 1.1 o r P VGS = 10V_IC = 30A VCS = 1V Base Source ON voltage r P e ts Test Conditions IB = 5A tpeak = 500ns STE50DE100 2.1 Electrical characteristics Electrical characteristics (curves) Figure 1. Output characteristics Figure 2. DC current gain Figure 3. Collector-source On voltage Figure 4. Collector-source On voltage c u d e t le Figure 5. (t s) Base-source On voltage o r P e c u d o s b O Figure 6. ) s t( o r P Base-source On voltage t e l o s b O 5/11 Electrical characteristics STE50DE100 Figure 7. Reverse biased safe operting Figure 8. area Figure 9. Dynamic collector-emitter saturation voltage Gate threshold voltage vs temperature Figure 10. Inductive load switching time c u d e t le o s b O - Figure 11. Inductive load switching time ) s ( ct u d o r P e t e l o s b O 6/11 o r P ) s t( STE50DE100 2.2 Electrical characteristics Test circuits Figure 12. Static VCS(ON) test circuit Figure 13. Inductive load switching and RBSOA test circuit c u d e t le ) s ( ct ) s t( o r P o s b O - u d o Figure 14. Inductive load turn-on switching and dynamic V CS(ON) test circuit r P e t e l o s b O 7/11 Package mechanical data 3 STE50DE100 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com c u d e t le ) s ( ct u d o r P e t e l o s b O 8/11 o s b O - o r P ) s t( STE50DE100 Package mechanical data ISOTOP MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 11.8 12.2 0.465 0.480 A1 8.9 9.1 0.350 0.358 B 7.8 8.2 0.307 0.322 C 0.75 0.85 0.029 0.033 C2 1.95 2.05 0.076 0.080 D 37.8 38.2 1.488 1.503 D1 31.5 31.7 1.240 1.248 E 25.15 25.5 0.990 1.003 E1 23.85 24.15 0.938 0.950 E2 24.8 0.976 G 14.9 15.1 0.586 G1 12.6 12.8 0.496 G2 3.5 4.3 0.137 F 4.1 4.3 0.161 F1 4.6 5 0.181 P 4 4.3 0.157 P1 4 4.4 0.157 S 30.1 30.3 ) s ( ct e t le 1.185 ) s t( 0.594 uc 0.503 1.169 Pr od 0.169 0.196 0.169 0.173 1.193 o s b O - u d o r P e s b O t e l o P093A 9/11 Revision history 4 STE50DE100 Revision history Table 4. Revision history Date Revision Changes 06-Oct-2004 1 Initial release. 22-Jan-2007 2 The document has been reformatted c u d e t le ) s ( ct u d o r P e t e l o s b O 10/11 o s b O - o r P ) s t( STE50DE100 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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