STE88N65M5

STE88N65M5 N-channel 650 V, 0.024 Ω typ., 88 A, MDmesh™ V Power MOSFET in a ISOTOP™ package Datasheet - production data Features Order code VDS @Tjmax RDS(on) max STE88N65M5 710 V ID 0.029 Ω 88 A • Very low RDS(on) • Higher VDSS rating • Higher dv/dt capability • Excellent switching performance ISOTOPTM • 100% avalanche tested Applications Figure 1. Internal schematic diagram • Switching applications Description ' This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. * 6Ć $0Y Table 1. Device summary Order code Marking Packages Packaging STE88N65M5 88N65M5 ISOTOP Tube February 2014 This is information on a product in full production. DocID025974 Rev 1 1/14 www.st.com Contents STE88N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 .............................................. 9 DocID025974 Rev 1 STE88N65M5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VGS Parameter Gate- source voltage Value Unit ± 25 V ID Drain current (continuous) at TC = 25 °C 88 A ID Drain current (continuous) at TC = 100 °C 55.7 A IDM (1) Drain current (pulsed) 352 A PTOT Total dissipation at TC = 25 °C 494 W IAR Max current during repetitive or single pulse avalanche (pulse width limited by TJMAX) 15 A EAS Single pulse avalanche energy (starting Tj = 25°C, ID = IAR, VDD = 50V) 2000 mJ 15 V/ns - 55 to 150 °C 150 °C Value Unit 0.253 °C/W 30 °C/W dv/dt(2) Tstg Tj Peak diode recovery voltage slope Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area. 2. ISD ≤ 88 A, di/dt = 400 A/μs, VDD = 400 V, VDS (peak) < V(BR)DSS. Table 3. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max DocID025974 Rev 1 3/14 14 Electrical characteristics 2 STE88N65M5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. On /off states Symbol V(BR)DSS IDSS IGSS Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 Min. Typ. V 1 μA 100 μA ±100 nA 4 5 V 0.024 0.029 Ω Min. Typ. Max. Unit - 8825 - pF - 223 - pF - 11 - pF VGS = ± 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 μA RDS(on) Static drain-source on- resistance Unit 650 VDS = 650 V Zero gate voltage drain current (VGS = 0) VDS = 650 V, TC=125 °C Gate-body leakage current (VDS = 0) Max. 3 VGS = 10 V, ID = 42 A Table 5. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Co(tr)(1) Equivalent capacitance time related VGS = 0, VDS = 0 to 520 V - 778 - pF Co(er)(2) Equivalent capacitance energy related VGS = 0, VDS = 0 to 520 V - 202 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 1.79 - Ω Qg Total gate charge - 204 - nC Qgs Gate-source charge - 51 - nC Qgd Gate-drain charge VDD = 520 V, ID = 42 A, VGS = 10 V (see Figure 16) - 84 - nC VDS = 100 V, f = 1 MHz, VGS = 0 1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 4/14 DocID025974 Rev 1 STE88N65M5 Electrical characteristics Table 6. Switching times Symbol Parameter td(v) Voltage delay time tr(v) Voltage rise time tf(i) Current fall time tc(off) Test conditions VDD = 400 V, ID = 56 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17) (see Figure 20) Crossing time Min. Typ. Max. Unit - 141 - ns - 16 - ns - 29 - ns - 56 - ns Min. Typ. Table 7. Source drain diode Symbol Parameter Test conditions Max. Unit Source-drain current - 88 A ISDM (1) Source-drain current (pulsed) - 352 A VSD (2) Forward on voltage - 1.5 V ISD trr ISD = 88 A, VGS = 0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 84 A, di/dt = 100 A/μs VDD = 100 V (see Figure 17) ISD = 84 A, di/dt = 100 A/μs VDD = 100 V, Tj = 150 °C (see Figure 17) - 544 ns - 14 μC - 50 A - 660 ns - 20 μC - 60 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% DocID025974 Rev 1 5/14 14 Electrical characteristics 2.1 STE88N65M5 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM18113v1 pe ra ite tion d b y in t m his ax a R rea D S ( is on ) ID (A) O 100µs 1ms Li 10 10µs m 100 10ms 1 Tj=150°C Tc=25°C Single pulse 0.1 0.1 10 1 VDS(V) 100 Figure 4. Output characteristics Figure 5. Transfer characteristics AM10393v1 ID (A) VDS=30V 225 VGS=10V 250 AM10394v1 ID (A) 200 8V 175 200 150 125 150 7V 100 100 75 50 50 6V 0 0 5 10 15 20 25 VDS(V) Figure 6. Normalized V(BR)DSS vs temperature AM10399v1 V(BR)DSS 25 0 (norm) 3 4 5 6 7 8 9 VGS(V) Figure 7. Static drain-source on-resistance AM10396v1 RDS(on) (Ω) VGS=10V 1.08 ID = 1mA 1.06 0.026 1.04 1.02 0.024 1.00 0.98 0.022 0.96 0.94 0.92 -50 -25 6/14 0 25 50 75 100 TJ(°C) 0.020 0 DocID025974 Rev 1 10 20 30 40 50 60 70 80 ID(A) STE88N65M5 Electrical characteristics Figure 8. Gate charge vs gate-source voltage AM10395v1 VGS (V) VDS (V) VDD=520V ID=42A 14 VDS Figure 9. Capacitance variations AM10397v1 C (pF) 500 100000 400 10000 300 1000 200 100 100 10 12 10 8 6 Ciss Coss 4 Crss 2 0 100 50 0 200 150 1 0.1 0 Qg(nC) Figure 10. Normalized gate threshold voltage vs temperature AM08899v1 VGS(th) 1 100 10 VDS(V) Figure 11. Normalized on-resistance vs temperature AM05501v2 RDS(on) (norm) (norm) 1.10 2.1 ID= 42 A ID= 250µA 1.9 VGS= 10 V 1.7 1.00 1.5 1.3 0.90 1.1 0.9 0.80 0.7 0.70 -50 -25 0 25 50 75 100 TJ(°C) Figure 12. Source-drain diode forward characteristics AM04974v1 VSD (V) TJ=-50°C 1.2 0.5 -50 -25 0 25 50 75 100 125 TJ(°C) Figure 13. Output capacitance stored energy AM10398v1 Eoss (µJ) 40 35 1.0 30 0.8 25 TJ=25°C 0.6 TJ=150°C 20 15 0.4 10 0.2 0 5 0 10 20 30 40 50 ISD(A) DocID025974 Rev 1 0 0 100 200 300 400 500 600 VDS(V) 7/14 14 Electrical characteristics STE88N65M5 Figure 14. Switching losses vs gate resistance (1) AM11171v1 E (μJ) Eon VDD=400V VGS=10V TJ=25°C 3000 ID=56A Eoff 2000 1000 0 0 10 20 30 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode. 8/14 DocID025974 Rev 1 STE88N65M5 3 Test circuits Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 17. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 18. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 19. Unclamped inductive waveform V(BR)DSS Figure 20. Switching time waveform &RQFHSWĆZDYHIRUPĆIRUĆ,QGXFWLYHĆ/RDGĆ7XUQRIIĆ ,G VD 9GV ,G 7GHOD\RII RII IDM 9JV 9JV RQ ID 9JV,W  VDD VDD ,G 9GV 9GV 7ULVH AM01472v1 DocID025974 Rev 1 7IDOO 7FU RVV RYHU  $0Y 9/14 14 Package mechanical data 4 STE88N65M5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/14 DocID025974 Rev 1 STE88N65M5 Package mechanical data Figure 21. ISOTOP drawing 0041565_Rev_I DocID025974 Rev 1 11/14 14 Package mechanical data STE88N65M5 Table 8. ISOTOP mechanical data mm Dim. Min. Typ. A 11.80 12.20 A1 8.90 9.10 B 7.80 8.20 C 0.75 0.85 C2 1.95 2.05 D 37.80 38.20 D1 31.50 31.70 E 25.15 25.50 E1 23.85 24.15 E2 12/14 Max. 24.80 G 14.90 15.10 G1 12.60 12.80 G2 3.50 4.30 F 4.10 4.30 F1 4.60 5 φP 4 4.30 P1 4 4.40 S 30.10 30.30 DocID025974 Rev 1 STE88N65M5 5 Revision history Revision history Table 9. Document revision history Date Revision 24-Feb-2014 1 Changes Initial release. DocID025974 Rev 1 13/14 14 STE88N65M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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