STF100N6F7

STF100N6F7 N-channel 60 V, 4.6 mΩ typ., 46 A STripFET™ F7 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STF100N6F7 60 V 5.6 mΩ 46 A 25 W • Among the lowest RDS(on) on the market   • Excellent figure of merit (FoM)  • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness 72)3 Applications Figure 1. Internal schematic diagram • Switching applications Description ' This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. * 6 $0Y Table 1. Device summary Order code Marking Package Packaging STF100N6F7 100N6F7 TO-220FP Tube February 2015 This is information on a product in full production. DocID027211 Rev 3 1/13 www.st.com Contents STF100N6F7 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 .............................................. 8 DocID027211 Rev 3 STF100N6F7 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ±20 V (1) A ID Drain current (continuous) at TC = 25 °C 46 ID Drain current (continuous) at TC = 100 °C 33(1) A Drain current (pulsed) 184 A PTOT Total dissipation at TC = 25 °C 25 W EAS(3) Single pulse avalanche energy 200 mJ dV/dt(4) Drain-body diode dynamic dV/dt ruggedness 6 V/ns 2500 V -55 to 175 °C Value Unit 6 °C/W 62.5 °C/W IDM (2) VISO Tj Tstg Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC= 25 °C) Operating junction temperature Storage temperature 1. Limited by package 2. Pulse width is limited by safe operating area 3. Starting TJ = 25 °C, ID = 20 A, VDD = 30 V 4. ISD= 46 A; di/dt = 600 A/µs; VDD = 48 V; Tj < Tjmax Table 3. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient DocID027211 Rev 3 3/13 13 Electrical characteristics 2 STF100N6F7 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. Max. 60 Unit V VGS = 0 V, VDS = 60 V 1 µA VGS = 0 V, VDS = 60 V, TJ = 125 °C 100 µA 100 nA 4 V 4.6 5.6 mΩ Min. Typ. Max. Unit - 1980 - pF - 970 - pF - 86 - pF - 30 - nC - 12.6 - nC - 5.9 - nC Min. Typ. Max. Unit - 21.6 - ns - 55.5 - ns - 28.6 - ns - 15 - ns IDSS Zero gate voltage Drain current IGSS Gate-source leakage current VDS = 0 V, VGS = 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 23 A 2 Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VGS = 0 V, VDS = 25 V, f = 1 MHz VDD = 30 V, ID = 46 A, VGS = 10 V Table 6. Switching times Symbol td(on) tr td(off) tf 4/13 Parameter Test conditions Turn-on delay time Rise time Turn-off-delay time VDD = 30 V, ID = 23 A RG = 4.7 Ω, VGS = 10 V Fall time DocID027211 Rev 3 STF100N6F7 Electrical characteristics Table 7. Source drain diode Symbol VSD (1) trr Parameter Test conditions Forward on voltage VGS = 0 V, ISD = 46 A Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 46 A, di/dt = 100 A/µs, VDD = 48 V Min. Typ. Max. - 1.2 Unit V - 48.4 ns - 47 nC - 2.0 A 1. Pulse test: pulse duration = 300 µs, duty cycle 1.5% DocID027211 Rev 3 5/13 13 Electrical characteristics 2.1 STF100N6F7 Electrical characteristics (curves) Figure 2. Safe operating area ,'$ Figure 3. Thermal impedance *,3*$/6 *,3*$/6 . į   Q  ' 6 R  2 LV SH OL UD P W LWH LRQ G LQ E\ W P KLV D[ D 5  UH D    —V   —V   PV  7M ƒ& 7& ƒ& 6LQJOHSXOVH   PV 9'69  Figure 4. Output characteristics ,'$  =WK . 5 WK-F į W SϨ 6LQJOHSXOVH *,3*$/6 9*6 9 9*6 9 WS          Ϩ  WS6 Figure 5. Transfer characteristics ,' $ *,3*$/6  9*6 9   9*6 9  9'6 9   9*6 9   9*6 9       Figure 6. Gate charge vs gate-source voltage 9*6 9 *,3*$/6  9'6 9 ,' $    9'69     9*69 Figure 7. Static drain-source on-resistance 5'6RQ Pȍ *,3*$/6     9*6 9       6/13      4JQ& DocID027211 Rev 3      ,'$ STF100N6F7 Electrical characteristics Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature 9*6WK QRUP *,3*$/6 & S) *,3*$/6  &LVV  ,' —$   &RVV     &UVV    9'69  Figure 10. Normalized on-resistance vs temperature 5'6RQ QRUP *,3*$/6  9*6 9        7-ƒ& Figure 11. Source-drain diode forward characteristics 96' 9    *,3*$/6 7- ƒ&  7- ƒ&    7- ƒ&            7-ƒ&             ,6'$ Figure 12. Normalized V(BR)DSS vs temperature 9%5'66 QRUP *,3*$/6   ,' P$          7-ƒ& DocID027211 Rev 3 7/13 13 Test circuits 3 STF100N6F7 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit 9'' 9 μF VDD VD VGS ,* &2167 9L 9 9*0$; RG Nȍ Q) 3.3 μF 2200 RL Nȍ  —) D.U.T. ȍ '87 Nȍ 9* PW Nȍ Nȍ 3: $0Y AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times A A Figure 16. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B S VD L=100μH 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform 9%5'66 WRQ 9' WGRQ WRII WU WGRII   ,'0  9'' $0Y 8/13   ,' 9'' WI 9*6  DocID027211 Rev 3  9'6  $0Y STF100N6F7 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID027211 Rev 3 9/13 13 Package mechanical data STF100N6F7 Figure 19. TO-220FP drawing 7012510_Rev_K_B 10/13 DocID027211 Rev 3 STF100N6F7 Package mechanical data Table 8. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Ø 3 3.2 DocID027211 Rev 3 11/13 13 Revision history 5 STF100N6F7 Revision history Table 9. Document revision history 12/13 Date Revision Changes 25-Nov-2014 1 First release. 16-Jan-2015 2 In Section 1, updated Table 2: Absolute maximum ratings In Section 2, – updated Table 4: On/off states – updated Table 5: Dynamic – updated Table 6: Switching times – updated Table 7: Source drain diode Added Section 2.1: Electrical characteristics (curves) 10-Feb-2015 3 Inserted dV/dt value in Table 2: Absolute maximum ratings. DocID027211 Rev 3 STF100N6F7 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved DocID027211 Rev 3 13/13 13