STF10N60M2

STF10N60M2 Datasheet N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a TO-220FP package Features 1 2 3 TO-220FP D(2) Order code VDS at TJmax. RDS(on) max. ID STF10N60M2 650 V 0.60 Ω 7.5 A • • Extremely low gate charge Excellent output capacitance (Coss) profile • • 100% avalanche tested Zener-protected Applications G(1) • Switching applications Description S(3) AM15572v1_no_tab This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STF10N60M2 Product summary Order code STF10N60M2 Marking 10N60M2 Package TO-220FP Packing Tube DS9705 - Rev 5 - February 2021 For further information contact your local STMicroelectronics sales office. www.st.com STF10N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Gate-source voltage ±25 V Drain current (continuous) at TC = 25 °C 7.5 Drain current (continuous) at TC = 100 °C 4.9 IDM (2) Drain current (pulsed) 30 A PTOT Total power dissipation at TC = 25 °C 25 W dv/dt(3) Peak diode recovery voltage slope 15 dv/dt(4) MOSFET dv/dt ruggedness 50 VISO (5) Insulation withstand voltage (RMS) from all three leads to external heat sink VGS ID (1) Tstg Tj Parameter Storage temperature range Operating junction temperature range A V/ns 2500 V -55 to 150 °C 1. Limited by package. 2. Pulse limited by safe operating area. 3. ISD ≤ 7.5 A, di/dt ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD = 400 V 4. VDS ≤ 480 V. 5. t = 1 s; TC = 25 °C. Table 2. Thermal data Symbol Parameter RthJC Thermal resistance, junction-to-case RthJA Thermal resistance, junction-to-ambient Value 5 62.5 Unit °C/W Table 3. Avalanche characteristics Symbol IAR (1) EAS (2) Parameter Value Unit Avalanche current, repetitive or not repetitive 1.5 A Single pulse avalanche energy 110 mJ 1. Pulse width limited by Tjmax. 2. Starting Tj = 25 °C, ID = IAR, VDD = 50 V. DS9705 - Rev 5 page 2/12 STF10N60M2 Electrical characteristics 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. Static Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage Min. VGS = 0 V, ID = 1 mA Typ. Max. 600 V VGS = 0 V, VDS = 600 V IDSS Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 3 A VGS = 0 V, VDS = 600 V, Tcase = 125 Unit 1 °C(1) 100 µA ±10 µA 3 4 V 0.55 0.60 Ω 2 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq. (1) Equivalent output capacitance Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 V VDS = 0 to 480 V, VGS = 0 V Min. Typ. Max. - 400 - - 22 - - 0.84 - - 83 - pF Ω RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 6.4 - Qg Total gate charge - 13.5 - - 2.1 - - 7.2 - Qgs Gate-source charge Qgd Gate-drain charge VDD = 480 V, ID = 7.5 A, VGS = 0 to 10 V (see ) Figure 14. Test circuit for gate charge behavior Unit pF nC 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol td(on) tr td(off) tf DS9705 - Rev 5 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time Fall time VDD = 300 V, ID = 3.75 A RG = 4.7 Ω, VGS = 10 V (see Figure 13. Test circuit for resistive load switching times and Figure 18. Switching time waveform) Min. Typ. Max. - 8.8 - - 8 - - 32.5 - - 13.2 - Unit ns page 3/12 STF10N60M2 Electrical characteristics Table 7. Source-drain diode Symbol Parameter ISD (1) Source-drain current ISDM (2) Source-drain current (pulsed) VSD (3) Forward on voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Test conditions VGS = 0 V, ISD = 7.5 A Min. Typ. Max. Unit - 7.5 A - 30 A - 1.6 V - 270 ns - 2 µC Reverse recovery current - 14.4 A trr Reverse recovery time - 376 ns Qrr Reverse recovery charge - 2.8 µC IRRM Reverse recovery current - 15 A ISD = 7.5 A, di/dt = 100 A/µs, VDD = 60 V (see ) Figure 15. Test circuit for inductive load switching and diode recovery times ISD = 7.5 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see ) Figure 15. Test circuit for inductive load switching and diode recovery times 1. Limited by package. 2. Pulse width is limited by safe operating area. 3. Pulse test: pulse duration = 300 µs, duty cycle 1.5%. DS9705 - Rev 5 page 4/12 STF10N60M2 Electrical characteristics curves 2.1 Electrical characteristics curves Figure 2. Maximum transient thermal impedance Figure 1. Safe operating area 10 ID (A) 2 (C/W) duty = 0.5 0.4 0.3 t p = 1 µs 101 10 GADG220120211246ZTH ZthJC IDM 0 Operation in this area is limited by R DS(on) t p = 10 µs R DS(on) max. t p = 100 µs 100 0.2 0.1 0.05 t p = 1 ms -1 single pulse, TC= 25°C, TJ ≤ 150°C, VGS = 10 V 10-1 t p = 10 ms 10 Single pulse V(BR)DSS -2 10-2 10-1 100 101 102 VDS (V) Figure 3. Output characteristics AM15823v1 ID (A) 14 10 -6 10 -5 10 -3 -2 10 10 -1 tp (s) Figure 4. Transfer characteristics AM15824v1 VDS=18V 14 6V 12 10 10 8 8 6 10 ID (A) VGS=7, 8, 9, 10V 12 -4 10 6 5V 4 4 2 2 4V 0 0 5 15 10 20 VDS(V) Figure 5. Gate charge vs gate-source voltage AM15825v1 VGS (V) VDD=480V ID=7.5A 12 VDS 10 8 0 0 2 4 10 8 6 VGS(V) Figure 6. Static drain-source on-resistance VDS (V) RDS(on) (Ω) 500 0.58 400 0.57 300 0.56 200 0.55 100 0.54 AM15826v1 VGS=10 V 6 4 2 0 0 DS9705 - Rev 5 2 4 6 8 10 12 0 Qg(nC) 0.53 1 2 3 4 5 6 7 ID(A) page 5/12 STF10N60M2 Electrical characteristics curves Figure 7. Capacitance variations AM15827v1 C (pF) AM15828v1 VGS(th) (norm) ID=250 µA 1000 Ciss 100 10 Figure 8. Normalized gate threshold voltage vs temperature 1.1 1.0 Coss f = 1 MHz 0.9 Crss 1 0.1 0.1 1 100 10 VDS (V) Figure 9. Normalized on-resistance vs temperature AM15829v1 RDS(on) (norm) 0.8 0.7 -50 -25 0 25 50 75 100 125 TJ(°C) Figure 10. Normalized V(BR)DSS vs temperature AM15831v1 V(BR)DSS norm 2.5 1.11 VGS=10 V 2.3 ID =1mA 1.09 2.1 1.07 1.9 1.05 1.7 1.03 1.5 1.3 1.01 1.1 0.99 0.9 0.97 0.7 0.95 0.5 -50 -25 0.93 -50 -25 0 25 50 75 100 125 TJ(°C) Figure 11. Source-drain diode forward characteristics AM15830v1 VSD(V) 0 25 50 75 100 125 TJ(°C) Figure 12. Output capacitance stored energy AM15832v1 Eoss (µJ) 1.4 1.2 3 TJ=-50°C 1.0 2 0.8 0.6 TJ=25°C TJ=150°C 0.4 1 0.2 0.0 0 DS9705 - Rev 5 1 2 3 4 5 6 7 ISD(A) 0 0 100 200 300 400 500 600 VDS(V) page 6/12 STF10N60M2 Test circuits 3 Test circuits Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A VD 100 µH fast diode B B B 3.3 µF D G + Figure 16. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 18. Switching time waveform Figure 17. Unclamped inductive waveform ton V(BR)DSS td(on) toff td(off) tr tf VD 90% 90% IDM VDD 10% 0 ID VDD VGS AM01472v1 0 VDS 10% 90% 10% AM01473v1 DS9705 - Rev 5 page 7/12 STF10N60M2 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-220FP package information Figure 19. TO-220FP package outline 7012510_Rev_13_B DS9705 - Rev 5 page 8/12 STF10N60M2 TO-220FP package information Table 8. TO-220FP package mechanical data Dim. mm Min. Max. A 4.40 4.60 B 2.50 2.70 D 2.50 2.75 E 0.45 0.70 F 0.75 1.00 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.20 G1 2.40 2.70 H 10.00 10.40 L2 DS9705 - Rev 5 Typ. 16.00 L3 28.60 30.60 L4 9.80 10.60 L5 2.90 3.60 L6 15.90 16.40 L7 9.00 9.30 Dia 3.00 3.20 page 9/12 STF10N60M2 Revision history Table 9. Document revision history Date Revision 29-May-2013 1 14-Oct-2013 2 Changes First release. Modified: RG value in Table 6 Minor text changes Added: I2PAKFP package – Modified: title – Modified: RDS(on) typical values in Table 5 06-Dec-2013 3 – Modified: RG value in Table 6 – Modified: Figure 7 and ID value in Figure 10 – Added: Table 10, and Figure 21 – Minor text changes The part number STFI10N60M2 has been moved to a separate datasheet and this document has been updated accordingly. 09-Mar-2017 4 Updated the title and the description in cover page. Updated Table 3. Avalanche characteristics. Minor text changes. 01-Feb-2021 DS9705 - Rev 5 5 Updated Figure 1 and Figure 2. Minor text changes. page 10/12 STF10N60M2 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.1 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 DS9705 - Rev 5 page 11/12 STF10N60M2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2021 STMicroelectronics – All rights reserved DS9705 - Rev 5 page 12/12