STB10N95K5, STF10N95K5,
STP10N95K5, STW10N95K5
N-channel 950 V, 0.65 Ω typ., 8 A Zener-protected SuperMESH™ 5
Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247
Datasheet - production data
Features
TAB
Order codes
3
1
2
D PAK
3
VDS
RDS(on) max
ID
PTOT
STB10N95K5
130 W
2
1
STF10N95K5
TO-220FP
950 V
0.8 Ω
30 W
8A
STP10N95K5
TAB
130 W
STW10N95K5
• Worldwide best FOM (figure of merit)
3
1
2
2
3
1
• 100% avalanche tested
TO-247
TO-220
• Ultra low gate charge
• Zener-protected
Figure 1. Internal schematic diagram
'7$%
Applications
• Switching applications
Description
*
6
AM01476v1
These N-channel Zener-protected Power
MOSFETs are designed using ST’s revolutionary
avalanche-rugged very high voltage
SuperMESH™ 5 technology, based on an
innovative proprietary vertical structure. The
result is a dramatic reduction in on-resistance,
and ultra-low gate charge for applications which
require superior power density and high
efficiency.
Table 1. Device summary
Order codes
Marking
Package
Packaging
D2PAK
Tape and reel
STB10N95K5
STF10N95K5
TO-220FP
10N95K5
STP10N95K5
TO-220
STW10N95K5
TO-247
January 2014
This is information on a product in full production.
DocID024850 Rev 3
Tube
1/22
www.st.com
Contents
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2/22
.............................................. 9
DocID024850 Rev 3
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
TO-220FP
VGS
ID
ID
Gate- source voltage
D2PAK,
TO-220, TO-247
±30
Drain current (continuous) at TC = 25 °C
IDM (2)
Drain current (pulsed)
PTOT
Total dissipation at TC = 25 °C
V
(1)
8
A
(1)
5
A
8
Drain current (continuous) at TC = 100 °C
Unit
5
32
A
30
130
W
IAR
Max current during repetitive or single
pulse avalanche
2.5
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID=IAS, VDD= 50 V)
122
mJ
dv/dt (3)
Peak diode recovery voltage slope
4.5
V/ns
dv/dt(4)
MOSFET dv/dt ruggedness
50
V/ns
VISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s; TC=25 °C)
Tj
Tstg
Operating junction temperature
Storage temperature
2500
V
- 55 to 150
°C
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 8 A, di/dt ≤ 100 A/μs, VDS(peak) ≤ V(BR)DSS.
4. VSD ≤ 760 V
Table 3. Thermal data
Value
Symbol
Parameter
TO-220FP
Rthj-case
Thermal resistance junction-case max
4.2
Rthj-amb
Thermal resistance junction-amb max
62.5
Rthj-pcb(1)
Thermal resistance junction-pcb max
1.
D2PAK
TO-220,
TO-247
0.96
°C/W
62.5
30
Unit
°C/W
°C/W
When mounted on 1 inch² FR-4, 2 Oz copper board
DocID024850 Rev 3
3/22
22
Electrical characteristics
2
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 4. On /off states
Symbol
V(BR)DSS
IDSS
Parameter
Test conditions
Drain-source breakdown
voltage
ID = 1 mA, VGS = 0
Typ.
VGS = ± 20 V; VDS=0
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 100 μA
RDS(on)
Static drain-source onresistance
VGS = 10 V, ID = 4 A
Max.
Unit
950
V
Zero gate voltage, VGS = 0 VDS = 950 V
drain current
VDS = 950 V, TC=125 °C
Gate-body leakage
current
IGSS
Min.
1
μA
50
μA
±10
μA
4
5
V
0.65
0.8
Ω
Min.
Typ.
Max.
Unit
-
630
-
pF
-
50
-
pF
3
Table 5. Dynamic
Symbol
Parameter
Test conditions
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
-
0.6
-
pF
Co(tr)(1)
Equivalent capacitance time
related
-
77
-
pF
Co(er)(2)
Equivalent capacitance
energy related
-
28
-
pF
RG
Intrinsic gate resistance
f = 1 MHz open drain
-
6.5
-
Ω
Qg
Total gate charge
-
22
-
nC
Qgs
Gate-source charge
-
5
-
nC
Qgd
Gate-drain charge
VDD = 760 V, ID = 8 A
VGS =10 V
(see Figure 20)
-
15
-
nC
VDS =100 V, f=1 MHz, VGS=0
VGS = 0, VDS = 0 to 760 V
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
2. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
4/22
DocID024850 Rev 3
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Electrical characteristics
Table 6. Switching times
Symbol
td(on)
tr
Parameter
Test conditions
tf
Typ.
Max
Unit
-
22
-
ns
-
14
-
ns
-
51
-
ns
-
15
-
ns
Min.
Typ.
Max
Unit
Turn-on delay time
VDD = 475 V, ID = 4 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19)
Rise time
td(off)
Min.
Turn-off-delay time
Fall time
Table 7. Source drain diode
Symbol
Parameter
Test conditions
A
ISD
ISDM (1)
VSD
(2)
Source-drain current
-
8
Source-drain current (pulsed)
-
32
A
1.5
V
Forward on voltage
ISD = 8 A, VGS = 0
-
trr
Reverse recovery time
-
404
ns
Qrr
Reverse recovery charge
-
5.2
μC
IRRM
Reverse recovery current
ISD = 8 A, di/dt = 100 A/μs
VDD= 60 V
(see Figure 21)
-
25.5
A
-
596
ns
-
6.9
μC
-
23
A
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 8 A, di/dt = 100 A/μs
VDD= 60 V TJ = 150 °C
(see Figure 21)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
V(BR)GSO Gate-source breakdown voltage IGS = ± 1mA, ID=0
Min
Typ.
Max.
Unit
30
-
-
V
The built-in back-to-back Zener diodes have been specifically designed to enhance not only
the device’s ESD capability, but also to make them capable of safely absorbing any voltage
transients that may occasionally be applied from gate to source. In this respect, the Zener
voltage is appropriate to achieve efficient and cost-effective protection of device integrity.
The integrated Zener diodes thus eliminate the need for external components.
DocID024850 Rev 3
5/22
22
Electrical characteristics
2.1
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Electrical characteristics (curves)
Figure 2. Safe operating area for D2PAK and
TO-220
Figure 3. Thermal impedance for D2PAK and
TO-220
AM16133v1
ID
(A)
on
)
10µs
100µs
1ms
D
S(
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
10
1
10ms
0.1
Tj=150°C
Tc=25°C
Single pulse
0.01
0.1
10
1
100
VDS(V)
Figure 4. Safe operating area for TO-220FP
Figure 5. Thermal impedance for TO-220FP
AM16134v1
ID
(A)
on
)
10µs
D
S(
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
10
1
100µs
1ms
10ms
0.1
Tj=150°C
Tc=25°C
Single pulse
0.01
0.1
10
1
100
VDS(V)
Figure 6. Safe operating area for TO-247
Figure 7. Thermal impedance for TO-247
AM16135v1
ID
(A)
on
)
10µs
D
S(
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
10
1
100µs
1ms
10ms
0.1
Tj=150°C
Tc=25°C
Single pulse
0.01
0.1
6/22
1
10
100
VDS(V)
DocID024850 Rev 3
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Figure 8. Output characteristics
Figure 9. Transfer characteristics
AM16136v1
ID (A)
VGS=10, 11V
16
Electrical characteristics
9V
AM16137v1
ID
(A)
VDS=20V
16
12
12
8V
8
8
4
4
7V
6V
0
0
8
4
12
16
Figure 10. Gate charge vs gate-source voltage
AM16138v1
VGS
(V)
VDD=760V
ID=8A
VDS
10
0
5
VDS(V)
VDS
(V)
6
7
8
9
10
VGS(V)
Figure 11. Static drain-source on-resistance
AM16139v1
RDS(on)
(Ω)
VGS=10V
1.6
600
8
1.2
400
6
0.8
4
200
2
0
0
5
15
10
20
0
0
Qg(nC)
Figure 12. Capacitance variations
2
3
4
5
6
7
ID(A)
Figure 13. Output capacitance stored energy
AM16140v1
C
(pF)
0.4
AM16141v1
Eoss
(µJ)
10
1000
Ciss
8
100
Coss
6
10
Crss
1
2
0.1
0.1
4
1
10
100
VDS(V)
DocID024850 Rev 3
0
0
200
400
600
800
VDS(V)
7/22
22
Electrical characteristics
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Figure 14. Normalized gate threshold voltage vs
temperature
AM16142v1
VGS(th)
(norm)
Figure 15. Normalized on-resistance vs
temperature
AM16143v1
RDS(on)
(norm)
ID=100µA
1.2
ID=4A
VGS=10V
2.5
1
2
0.8
1.5
0.6
1
0.4
0.5
0.2
0
-100
-50
0
50
100
150
0
-100
TJ(°C)
Figure 16. Normalized VDS vs temperature
-50
0
50
100
150
Figure 17. Source-drain diode forward
characteristics
AM16145v1
VDS
TJ(°C)
AM16144v1
VSD(V)
(norm)
TJ=-50°C
ID=1mA
1.1
0.9
TJ=25°C
1.05
0.8
1
0.7
TJ=150°C
0.95
0.6
0.9
0.85
-100
0.5
-50
0
50
100
150 TJ(°C)
Figure 18. Maximum avalanche energy vs
starting TJ
AM16146v1
EAS
(mJ)
120
ID=2.5 A
VDD=50 V
100
80
60
40
20
0
0
8/22
25
50
75
100
125 TJ(°C)
DocID024850 Rev 3
2
3
4
5
6
7
ISD(A)
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
3
Test circuits
Test circuits
Figure 19. Switching times test circuit for
resistive load
Figure 20. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
IG=CONST
VDD
VGS
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
Figure 21. Test circuit for inductive load
switching and diode recovery times
A
A
AM01469v1
Figure 22. Unclamped inductive load test circuit
L
A
D
G
D.U.T.
FAST
DIODE
B
B
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 23. Unclamped inductive waveform
Figure 24. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
0
DocID024850 Rev 3
10%
AM01473v1
9/22
22
Package mechanical data
4
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
10/22
DocID024850 Rev 3
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Package mechanical data
Figure 25. D²PAK (TO-263) drawing
0079457_T
Table 9. D²PAK (TO-263) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
E
10
E1
8.50
10.40
e
2.54
e1
4.88
5.28
H
15
15.85
DocID024850 Rev 3
11/22
22
Package mechanical data
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Table 9. D²PAK (TO-263) mechanical data (continued)
mm
Dim.
Min.
Typ.
Max.
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
0.4
0°
8°
Figure 26. D²PAK footprint(a)
16.90
12.20
5.08
1.60
3.50
9.75
a. All dimension are in millimeters
12/22
DocID024850 Rev 3
Footprint
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Package mechanical data
Figure 27. TO-220FP drawing
7012510_Rev_K_B
DocID024850 Rev 3
13/22
22
Package mechanical data
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Table 10. TO-220FP mechanical data
mm
Dim.
Min.
Typ.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
14/22
Max.
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
DocID024850 Rev 3
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Package mechanical data
Figure 28. TO-220 type A drawing
BW\SH$B5HYB7
DocID024850 Rev 3
15/22
22
Package mechanical data
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Table 11. TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
16/22
Max.
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
∅P
3.75
3.85
Q
2.65
2.95
DocID024850 Rev 3
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Package mechanical data
Figure 29. TO-247 drawing
0075325_G
Table 12. TO-247 mechanical data
mm.
Dim.
Min.
Typ.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
DocID024850 Rev 3
17/22
22
Package mechanical data
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Table 12. TO-247 mechanical data (continued)
mm.
Dim.
Min.
Typ.
Max.
e
5.30
5.45
5.60
L
14.20
14.80
L1
3.70
4.30
L2
18/22
18.50
∅P
3.55
3.65
∅R
4.50
5.50
S
5.30
5.50
DocID024850 Rev 3
5.70
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
5
Packaging mechanical data
Packaging mechanical data
Figure 30. Tape
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
B1
K0
For machine ref. only
including draft and
radii concentric around B0
W
B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
DocID024850 Rev 3
19/22
22
Packaging mechanical data
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
Figure 31. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At slot location
B
D
C
N
A
Full radius
G measured at hub
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
Table 13. D²PAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
20/22
Dim.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base qty
1000
P2
1.9
2.1
Bulk qty
1000
R
50
T
0.25
0.35
W
23.7
24.3
DocID024850 Rev 3
Min.
Max.
330
13.2
26.4
30.4
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
6
Revision history
Revision history
Table 14. Document revision history
Date
Revision
Changes
24-Jun-2013
1
First release.
07-Oct-2013
2
–
–
–
–
–
–
–
29-Jan-2014
3
– Datasheet status promoted from preliminary data to production
data
– Minor text changes
Added: D2PAK package
Modified: note 4 in Table 2
Added: Thermal resistance junction-pcb max parameter
Modified: typical values in Table 5, 6 and 7
Added: Section 2.1: Electrical characteristics (curves)
Updated: Section 4: Package mechanical data
Minor text changes
DocID024850 Rev 3
21/22
22
STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5
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