STF10NM60ND

STD10NM60ND Datasheet N-channel 600 V, 570 mΩ typ., 8 A FDmesh II Power MOSFET in a DPAK package Features TAB 2 3 1 DPAK D(2, TAB) Order code VDS at TJ max. RDS(on) max. ID STD10NM60ND 650 V 600 mΩ 8A • • • Fast-recovery body diode Low gate charge and input capacitance Low on-resistance RDS(on) • • 100% avalanche tested High dv/dt ruggedness Applications G(1) • Switching applications Description S(3) AM01475v1_noZen This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters. Product status link STD10NM60ND Product summary Order code STD10NM60ND Marking 10NM60ND Package DPAK Packing Tape and reel DS7103 - Rev 4 - June 2023 For further information contact your local STMicroelectronics sales office. www.st.com STD10NM60ND Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 600 V VGS Gate-source voltage ±25 V Drain current (continuous) at TC = 25 °C 8 Drain current (continuous) at TC = 100 °C 5 IDM(1) Drain current (pulsed) 32 A PTOT Total power dissipation at TC = 25 °C 70 W Peak diode recovery voltage slope 40 V/ns -55 to 150 °C 150 °C Value Unit 1.79 °C/W 50 °C/W Value Unit ID dv/dt(2) Tstg TJ Storage temperature range Maximum operating junction temperature A 1. Pulse width is limited by safe operating area. 2. ISD ≤ 8 A, di/dt ≤ 400 A/μs, VDS (peak) < V(BR)DSS, VDD = 80% V(BR)DSS. Table 2. Thermal data Symbol RthJC RthJA(1) Parameter Thermal resistance, junction-to-case Thermal resistance, junction-to-ambient 1. When mounted on 1 inch2 FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol DS7103 - Rev 4 Parameter IAS Avalanche current, repetitive or non-repetitive (pulse width limited by TJ max.) 2.5 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAS, VDD = 50 V) 130 mJ page 2/19 STD10NM60ND Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified. Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage Min. VGS = 0 V, ID = 1 mA Typ. 600 Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 4 A VGS = 0 V, VDS = 600 V, TC = 125 Unit V VGS = 0 V, VDS = 600 V IDSS Max. 1 µA 100 µA ±100 nA 4 5 V 570 600 mΩ Min. Typ. Max. Unit - 577 - pF - 32.4 - pF - 1.76 - pF °C(1) 3 1. Specified by design, not tested in production. Table 5. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq. (1) Equivalent output capacitance VGS = 0 V, VDS = 0 to 480 V - 138 - pF RG Gate input resistance f = 1 MHz, ID=0 A - 6 - Ω Qg Total gate charge - 20 - nC Qgs Gate-source charge - 4.3 - nC Qgd Gate-drain charge - 11.6 - nC VDS = 50 V, f = 1 MHz, VGS = 0 V VDD = 480 V, ID = 8 A, VGS = 0 to 10 V (see Figure 14. Test circuit for gate charge behavior) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol td(on) tr td(off) tf DS7103 - Rev 4 Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time VDD = 300 V, ID = 4 A, - 9.2 - ns Rise time RG = 4.7 Ω, VGS = 10 V - 10 - ns Turn-off delay time (see Figure 13. Test circuit for resistive load switching times and Figure 18. Switching time waveform) - 32 - ns - 9.8 - ns Fall time page 3/19 STD10NM60ND Electrical characteristics Table 7. Source-drain diode Symbol ISD Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 8 A ISDM(1) Source-drain current (pulsed) - 32 A VSD(2) Forward on voltage ISD = 8 A, VGS = 0 V - 1.5 V trr Reverse recovery time ISD = 8 A, di/dt = 100 A/µs, - 118 ns Qrr Reverse recovery charge VDD = 60 V - 680 nC IRRM Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 11 A trr Reverse recovery time ISD = 8 A, di/dt = 100 A/µs, - 150 ns Qrr Reverse recovery charge VDD = 60 V, TJ = 150 °C - 918 nC Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 12 A IRRM 1. Pulse width is limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%. DS7103 - Rev 4 page 4/19 STD10NM60ND Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Normalized transient thermal impedance AM08975v1 ID (A) GC20460 K Tj=150°C Tc=25°C Single pulse 10 10µs is ) ea (on is R DS h t in ax n io y m at d b r pe te O imi L ar 1 100µs 100 1ms 10ms 10-1 0.1 Zth = K *RthJC 0.01 0.1 10 1 10-2 10-5 V DS(V) 100 Figure 3. Typical output characteristics 10-2 tp (s) 10-1 AM08977v1 ID (A) VGS=10V 14 10-3 Figure 4. Typical transfer characteristics AM08976v1 ID (A) 10-4 VDS=19V 14 12 12 7V 10 10 8 8 6 6 4 4 6V 2 0 2 5V 0 5 10 20 15 25 30 Figure 5. Normalized gate threshold vs temperature AM08982v1 VGS(th) 0 VDS(V) 0 2 4 VGS(V) 10 AM09028v1 VBR(DSS) ID=1mA 1.10 ID=250µA 1.10 8 Figure 6. Normalized breakdown voltage vs temperature (norm) (norm) 6 1.08 1.06 1.00 1.04 1.02 0.90 1.00 0.98 0.80 0.96 0.70 -50 0.94 0.92 -50 -25 DS7103 - Rev 4 -25 0 25 50 75 100 TJ(°C) 0 25 50 75 100 TJ (°C) page 5/19 STD10NM60ND Electrical characteristics (curves) Figure 7. Typical drain-source on-resistance AM08979v1 RDS(on) (mΩ) 600 Figure 8. Normalized on-resistance vs temperature (norm) 2.1 VGS=10V VGS= 10 V 1.9 590 1.7 580 1.5 570 1.3 560 1.1 550 0.9 540 0.7 530 AM08983v1 RDS(on) 0 2 1 3 5 4 6 7 8 ID(A) Figure 9. Typical gate charge characteristics AM08978v1 VDS VGS (V) 12 VDD=480V (V) ID=8A 500 VDS 10 0.5 -50 -25 0 25 50 75 100 TJ(°C) Figure 10. Typical capacitance characteristics AM08980v1 C (pF) 1000 Ciss 400 8 300 100 6 200 4 Coss 10 100 2 0 0 10 5 15 20 0 Qg (nC) Figure 11. Typical output capacitance stored energy AM08981v1 Eoss (µJ) Crss 1 0.1 1 100 10 Figure 12. Typical reverse diode forward characteristics AM08985v1 VSD (V) TJ=-50°C 1.2 4 TJ=25°C 1.0 3 VDS(V) 0.8 0.6 2 TJ=150°C 0.4 1 0 0 DS7103 - Rev 4 0.2 100 200 300 400 500 0.0 600 VDS(V) 0 2 4 6 8 ISD(A) page 6/19 STD10NM60ND Test circuits 3 Test circuits Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A A L 100 µH fast diode B B B G RG VD 3.3 µF D + Figure 16. Unclamped inductive load test circuit 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S _ D.U.T. Vi pulse width AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform ton V(BR)DSS td(on) toff td(off) tr tf VD 90% 90% IDM VDD VDD VGS 0 AM01472v1 DS7103 - Rev 4 10% 0 ID VDS 10% 90% 10% AM01473v1 page 7/19 STD10NM60ND Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 DPAK (TO-252) type A package information Figure 19. DPAK (TO-252) type A package outline 0068772_A_34 DS7103 - Rev 4 page 8/19 STD10NM60ND DPAK (TO-252) type A package information Table 8. DPAK (TO-252) type A mechanical data Dim. mm Min. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 5.10 5.25 E 6.40 E1 4.60 4.70 4.80 e 2.159 2.286 2.413 e1 4.445 4.572 4.699 H 9.35 10.10 L 1.00 1.50 (L1) 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 R V2 DS7103 - Rev 4 Typ. 6.60 1.00 0.20 0° 8° page 9/19 STD10NM60ND DPAK (TO-252) type C3 package information 4.2 DPAK (TO-252) type C3 package information Figure 20. DPAK (TO-252) type C3 package outline 0068772_type-C3_rev34 DS7103 - Rev 4 page 10/19 STD10NM60ND DPAK (TO-252) type C3 package information Table 9. DPAK (TO-252) type C3 mechanical data Dim. mm Min. Typ. Max. A 2.20 2.30 2.38 A1 0.00 A2 0.90 b 0.72 0.85 b2 0.72 1.10 b3 5.13 c 0.47 0.60 c2 0.47 0.60 D 6.00 6.10 6.20 D1 5.20 5.45 5.70 E 6.50 6.60 6.70 E1 5.00 5.20 5.40 e 2.186 2.286 2.386 H 9.80 10.10 10.40 L 1.40 1.50 1.70 1.01 5.33 L1 2.90 REF L2 0.51 BSC L3 0.90 L4 0.60 L5 0.15 L6 DS7103 - Rev 4 0.10 1.10 5.46 1.25 0.80 1.00 0.75 1.80 REF θ 0° 8° θ1 5° 7° 9° θ2 5° 7° 9° page 11/19 STD10NM60ND DPAK (TO-252) type E package information 4.3 DPAK (TO-252) type E package information Figure 21. DPAK (TO-252) type E package outline 0068772_typeE_rev.34 DS7103 - Rev 4 page 12/19 STD10NM60ND DPAK (TO-252) type E package information Table 10. DPAK (TO-252) type E mechanical data Dim. A mm Min. Typ. 2.18 2.39 A2 0.13 b 0.65 0.884 b4 4.95 5.46 c 0.46 0.61 c2 0.46 0.60 D 5.97 6.22 D1 5.21 E 6.35 E1 4.32 6.73 e 2.286 e1 4.572 H 9.94 10.34 L 1.50 1.78 L1 L2 L4 DS7103 - Rev 4 Max. 2.74 0.89 1.27 1.02 page 13/19 STD10NM60ND DPAK (TO-252) type E package information Figure 22. DPAK (TO-252) recommended footprint (dimensions are in mm) FP_0068772_34 FP_0068772_34 DS7103 - Rev 4 page 14/19 STD10NM60ND DPAK (TO-252) packing information 4.4 DPAK (TO-252) packing information Figure 23. DPAK (TO-252) tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 DS7103 - Rev 4 page 15/19 STD10NM60ND DPAK (TO-252) packing information Figure 24. DPAK (TO-252) reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 11. DPAK (TO-252) tape and reel mechanical data Tape Dim. mm mm Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 DS7103 - Rev 4 Reel Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 18.4 22.4 page 16/19 STD10NM60ND Revision history Table 12. Document revision history Date Revision 10-Feb-2011 1 Changes First release. Updated features in table and description in cover page. 17-Nov-2011 2 Updated Table 2: Absolute maximum ratings, Table 5: On /off states, Table 15: Normalized on resistance vs temperature, Figure 17: Normalized VDS vs temperature and Section 4: Package mechanical data. Modified Table 3: "Thermal data". 03-Nov-2017 3 Modified Section 4: "Package information". Minor text changes. The part numbers STF10NM60ND, STP10NM60ND have been moved to separate datasheets and the documents have been updated accordingly. 16-Jun-2023 4 Updated the entire Section 4 Package information. Minor text changes. DS7103 - Rev 4 page 17/19 STD10NM60ND Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.2 DPAK (TO-252) type C3 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.3 DPAK (TO-252) type E package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.4 DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 DS7103 - Rev 4 page 18/19 STD10NM60ND IMPORTANT NOTICE – READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2023 STMicroelectronics – All rights reserved DS7103 - Rev 4 page 19/19