STF11N50M2

STD11N50M2, STF11N50M2 Datasheet N-channel 500 V, 0.45 Ω typ., 8 A MDmesh™ M2 Power MOSFETs in DPAK and TO-220FP packages Features Order code STD11N50M2 TAB 3 2 1 TO-220FP DPAK 1 2 STF11N50M2 3 D(2, TAB) VDS @ TJmax RDS(on)max. ID 550 V 0.53 Ω 8A • • Extremely low gate charge Excellent output capacitance (COSS) profile • • 100% avalanche tested Zener-protected Package DPAK TO-220FP Applications • G(1) Switching applications Description S(3) AM01475V1 These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status STD11N50M2 STF11N50M2 Product summary Order code STD11N50M2 Marking 11N50M2 Package DPAK Packing Tape and reel Order code STF11N50M2 Marking 11N50M2 Package TO-220FP Packing Tube DS10177 - Rev 3 - October 2018 For further information contact your local STMicroelectronics sales office. www.st.com STD11N50M2, STF11N50M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VGS Parameter Value DPAK Gate-source voltage TO-220FP Unit ±25 V ID Drain current (continuous) at TC = 25 °C 8 A ID Drain current (continuous) at TC = 100 °C 5 A Drain current (pulsed) 32 A IDM (1) PTOT Total power dissipation at TC = 25 °C 85 25 W dv/dt (2) Peak diode recovery voltage slope 15 V/ns dv/dt (3) MOSFET dv/dt ruggedness 50 V/ns Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC = 25 °C) VISO Tj 2.5 Operating junction temperature range Tstg -55 to 150 Storage temperature range kV °C 1. Pulse width limited by safe operating area. 2. ISD ≤ 8 A, di/dt ≤ 400 A/μs, VDS(peak) < V(BR)DSS, VDD = 400 V. 3. VDS ≤ 400 V. Table 2. Thermal data Symbol Parameter Rthj-case Rthj-pcb (1) Rthj-amb Value DPAK TO-220FP Thermal resistance junction-case 1.47 5 Thermal resistance junction-pcb 50 Unit °C/W °C/W Thermal resistance junction-ambient 62.5 °C/W 1. When mounted on 1 inch² FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol IAR EAS DS10177 - Rev 3 Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Value Unit 2 A 190 mJ page 2/22 STD11N50M2, STF11N50M2 Electrical characteristics 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 V Min. Typ. 500 IDSS 1 µA 100 µA ±10 µA 3 4 V 0.45 0.53 Ω Typ. Max. Unit - pF VDS = 500 V, VGS = 0 V, TC = 125 °C (1) IGSS Gate body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 4 A 2 Unit V VDS = 500 V, VGS = 0 V Zero gate voltage drain current Max. 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance Rg Gate input resistance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions Min. 395 VDS = 100 V, f = 1 MHz, VGS = 0 V - 26 1 VGS = 0 V, VDS = 0 to 400 V - 108 - pF f = 1 MHz open drain - 6.3 - Ω - nC 12 VDD = 400 V, ID = 8 A, VGS = 0 to 10 V(see Figure 16. Test circuit for gate charge behavior) - 2 6.4 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol td(on) tr td(off) tf DS10177 - Rev 3 Parameter Test conditions Turn-on delay time VDD = 250 V, ID = 4 A, Rise time RG = 4.7 Ω, VGS = 10 V Turn-off delay time (see Figure 15. Test circuit for resistive load switching times and Figure 20. Switching time waveform) Fall time Min. Typ. Max. Unit - ns 11 - 9 8 28.5 page 3/22 STD11N50M2, STF11N50M2 Electrical characteristics Table 7. Source-drain diode Symbol ISD Parameter Test conditions Source-drain current Min. Typ. 8 - ISDM (1) Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 8 A, VGS = 0 V trr Reverse recovery time ISD = 8 A, di/dt = 100 A/µs Qrr Reverse recovery charge IRRM Reverse recovery current VDD = 60 V (see Figure 17. Test circuit for inductive load switching and diode recovery times) trr Reverse recovery time ISD = 8 A, di/dt = 100 A/µs Qrr Reverse recovery charge IRRM Reverse recovery current VDD = 60 V, Tj = 150 °C (see Figure 17. Test circuit for inductive load switching and diode recovery times) 32 - - - Max. 1.6 Unit A V 258 ns 1.84 μC 14.3 A 370 ns 2.87 μC 15.5 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%. DS10177 - Rev 3 page 4/22 STD11N50M2, STF11N50M2 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for DPAK GIPG050620141220SA ID (A) Figure 2. Thermal impedance for DPAK GC20460 K 10µs (o n) 100 DS Op Lim era ite tion d by in th m is ax ar R e a is 10 100µs 1 1ms Tj=150°C Tc=25°C Single pulse 0.1 0.1 1 10 100 10-2 10-5 VDS(V) Figure 3. Safe operating area for TO-220FP GIPG050620141300SA ID (A) 10-4 10-3 10-2 tp (s) 10-1 Figure 4. Thermal impedance for TO-220FP K GC20940 ) on 10µs S( pe ra ite tio d ni by n m this ax a R rea D is 10 10-1 10ms Li O 100µs m 1 10 -1 1ms 10ms 10 -2 0.1 0.01 0.1 Tj=150°C Tc=25°C Single pulse 1 10 100 VDS(V) Figure 5. Output characterisics GIPG090620141310SA ID (A) VGS=8, 9, 10V 16 7V 6V 12 8 DS10177 - Rev 3 10 -3 10 -2 10 -1 10 0 t p (s) Figure 6. Transfer characteristics GIPG090620141514SA ID (A) VDS=18V 16 12 8 5V 4 4 0 0 10 -3 10 -4 4V 4 8 12 16 VDS(V) 0 0 2 4 6 8 VGS(V) page 5/22 STD11N50M2, STF11N50M2 Electrical characteristics (curves) Figure 7. Gate charge vs gate-source voltage GIPG090620141521SA VDS VGS (V) VDS (V) VDD=400V ID=8A 10 375 8 300 6 225 4 150 2 75 Figure 8. Static drain-source on-resistance GIPG090620141528SA RDS(on) (Ω) VGS=10V 0.47 0.46 0.45 0 0 4 2 6 8 10 12 0 Qg(nC) 0.43 1 2 3 4 5 6 7 ID(A) Figure 10. Output capacitance stored energy Figure 9. Capacitance variations GIPG090620141537SA C (pF) 0.44 GIPG090620141544SA Eoss (µJ) 2.4 1000 Ciss 100 2.0 1.6 Coss 10 1.2 0.8 1 f =1 MHz 0.1 0.1 1 Crss 100 10 VDS(V) Figure 11. Normalized gate threshold voltage vs temperature GIPG090620140915SA VGS(th) (norm) 100 200 300 400 VDS(V) Figure 12. Normalized on-resistance vs temperature GIPG090620140921SA RDS(on) (norm) VGS=10V 1.4 0.9 1 0.8 0.6 0.7 DS10177 - Rev 3 0 1.8 1.0 0.6 -75 0.0 2.2 ID=250µA 1.1 0.4 -25 25 75 125 TJ(°C) 0.2 -75 -25 25 75 125 TJ(°C) page 6/22 STD11N50M2, STF11N50M2 Electrical characteristics (curves) Figure 13. Normalized V(BR)DSS vs temperature GIPG090620141002SA V(BR)DSS (norm) DS10177 - Rev 3 1 1.04 0.9 1.00 0.8 0.96 0.7 0.92 0.6 0.88 -75 -25 25 75 GIPG090620141010SA VSD (V) TJ=-50°C ID=1mA 1.08 Figure 14. Source-drain diode forward characteristics 125 TJ(°C) 0.5 TJ=25°C TJ=150°C 1 2 3 4 5 ISD(A) page 7/22 STD11N50M2, STF11N50M2 Test circuits 3 Test circuits Figure 15. Test circuit for resistive load switching times Figure 16. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 17. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A B B 3.3 µF D G + VD 100 µH fast diode B Figure 18. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 20. Switching time waveform Figure 19. Unclamped inductive waveform ton V(BR)DSS td(on) VD toff td(off) tr tf 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS10177 - Rev 3 page 8/22 STD11N50M2, STF11N50M2 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS10177 - Rev 3 page 9/22 STD11N50M2, STF11N50M2 DPAK (TO-252) type A package information 4.1 DPAK (TO-252) type A package information Figure 21. DPAK (TO-252) type A package outline 0068772_A_25 DS10177 - Rev 3 page 10/22 STD11N50M2, STF11N50M2 DPAK (TO-252) type A package information Table 8. DPAK (TO-252) type A mechanical data Dim. mm Min. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 4.60 4.70 4.80 e 2.159 2.286 2.413 e1 4.445 4.572 4.699 H 9.35 10.10 L 1.00 1.50 (L1) 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 R V2 DS10177 - Rev 3 Typ. 5.10 5.25 6.60 1.00 0.20 0° 8° page 11/22 STD11N50M2, STF11N50M2 DPAK (TO-252) type C package information 4.2 DPAK (TO-252) type C package information Figure 22. DPAK (TO-252) type C package outline 0068772_C_25 DS10177 - Rev 3 page 12/22 STD11N50M2, STF11N50M2 DPAK (TO-252) type C package information Table 9. DPAK (TO-252) type C mechanical data Dim. mm Min. Typ. Max. A 2.20 2.30 2.38 A1 0.90 1.01 1.10 A2 0.00 0.10 b 0.72 0.85 b4 5.13 c 0.47 0.60 c2 0.47 0.60 D 6.00 D1 5.25 E 6.50 E1 4.70 e 5.46 6.10 6.20 6.60 6.70 2.186 2.286 2.386 H 9.80 10.10 10.40 L 1.40 1.50 1.70 L1 L2 2.90 REF 0.90 L3 L4 1.25 0.51 BSC 0.60 L6 DS10177 - Rev 3 5.33 0.80 1.00 1.80 BSC θ1 5° 7° 9° θ2 5° 7° 9° V2 0° 8° page 13/22 STD11N50M2, STF11N50M2 DPAK (TO-252) type E package information 4.3 DPAK (TO-252) type E package information Figure 23. DPAK (TO-252) type E package outline 0068772_type-E_rev.25 DS10177 - Rev 3 page 14/22 STD11N50M2, STF11N50M2 DPAK (TO-252) type E package information Table 10. DPAK (TO-252) type E mechanical data Dim. A mm Min. Typ. Max. 2.18 2.39 A2 0.13 b 0.65 0.884 b4 4.95 5.46 c 0.46 0.61 c2 0.46 0.60 D 5.97 6.22 D1 5.21 E 6.35 E1 4.32 6.73 e 2.286 e1 4.572 H 9.94 10.34 L 1.50 1.78 L1 L2 2.74 0.89 L4 1.27 1.02 Figure 24. DPAK (TO-252) recommended footprint (dimensions are in mm) FP_0068772_25 DS10177 - Rev 3 page 15/22 STD11N50M2, STF11N50M2 DPAK (TO-252) packing information 4.4 DPAK (TO-252) packing information Figure 25. DPAK (TO-252) tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 DS10177 - Rev 3 page 16/22 STD11N50M2, STF11N50M2 DPAK (TO-252) packing information Figure 26. DPAK (TO-252) reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 11. DPAK (TO-252) tape and reel mechanical data Tape Dim. mm mm Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 DS10177 - Rev 3 Reel Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 18.4 22.4 page 17/22 STD11N50M2, STF11N50M2 TO-220FP package information 4.5 TO-220FP package information Figure 27. TO-220FP package outline 7012510_Rev_12_B DS10177 - Rev 3 page 18/22 STD11N50M2, STF11N50M2 TO-220FP package information Table 12. TO-220FP package mechanical data Dim. mm Min. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 DS10177 - Rev 3 Typ. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 page 19/22 STD11N50M2, STF11N50M2 Revision history Table 13. Document revision history Date Version 12-Mar-2014 1 Changes First release. – Modified: title – Modified: dv/dt values in Table 2 – Modified: values in Table 4 17-Jun-2014 2 – Modified: RDS(on) value in Table 5 – Modified: the entire typical values in Table 6, 7 and 8 – Added: Section 2.1: Electrical characteristics (curves) – Updated: Section 4: Package mechanical data – Minor text changes Removed maturity status indication from cover page. The document status is production data. 26-Oct-2018 3 Modified title, features and description on cover page. Updated Section 4 Package information. Minor text changes. DS10177 - Rev 3 page 20/22 STD11N50M2, STF11N50M2 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 4.1 DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.2 DPAK (TO-252) type C package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.3 DPAK (TO-252) type E package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.4 DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.5 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 DS10177 - Rev 3 page 21/22 STD11N50M2, STF11N50M2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS10177 - Rev 3 page 22/22