STF11N60M2-EP

STF11N60M2-EP Datasheet N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh™ M2 EP Power MOSFET in a TO-220FP package Features 1 2 3 TO-220FP D(2) Order code VDS RDS(on) max. ID STF11N60M2-EP 600 V 0.595 Ω 7.5 A • • Extremely low gate charge Excellent output capacitance (COSS) profile • • • Very low turn-off switching losses 100% avalanche tested Zener-protected Applications • Switching applications G(1) Description S(3) AM15572v1_no_tab This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters. Product status STF11N60M2-EP Product summary Order code STF11N60M2-EP Marking 11N60M2EP Package TO-220FP Packing Tube DS11598 - Rev 4 - April 2018 For further information contact your local STMicroelectronics sales office. www.st.com STF11N60M2-EP Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Gate-source voltage ±25 V Drain current (continuous) at TC = 25 °C 7.5 A Drain current (continuous) at TC = 100 °C 4.7 A IDM(1) Drain current (pulsed) 30 A PTOT Total dissipation at TC = 25 °C 25 W dv/dt(2) Peak diode recovery voltage slope 15 V/ns dv/dt(3) MOSFET dv/dt ruggedness 50 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, TC = 25 °C) 2.5 kV Tstg Storage temperature range -55 to 150 °C Value Unit 5 °C/W 62.5 °C/W Value Unit 2.4 A 115 mJ VGS ID Tj Parameter Operating junction temperature range 1. Pulse width limited by safe operating area. 2. ISD ≤ 7.5 A, di/dt ≤ 400 A/µs, VDS peak < V(BR)DSS, VDD = 400 V 3. VDS ≤ 480 V Table 2. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Table 3. Avalanche characteristics Symbol IAR EAS DS11598 - Rev 4 Parameter Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) page 2/14 STF11N60M2-EP Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. 600 Zero gate voltage drain current 1 µA 100 µA ±10 µA 4 4.75 V 0.550 0.595 Ω Min. Typ. Max. Unit - 390 - pF - 22 - pF - 0.7 - pF VGS = 0 V, VDS = 600 V, TC = 125 °C (1) IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 3.75 A Unit V VGS = 0 V, VDS = 600 V IDSS Max. 3.25 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq. (1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 49 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 9 - Ω Qg Total gate charge VDD = 480 V, ID = 7.5 A, - 12.4 - nC Qgs Gate-source charge VGS = 0 to 10 V - 2.1 - nC Qgd Gate-drain charge (see Figure 15. Test circuit for gate charge behavior) - 6 - nC VDS= 100 V, f = 1 MHz, VGS = 0 V 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 6. Switching energy Symbol Parameter Test conditions VDD = 400 V, ID = 1 A, E(off) Turn-off energy (from 90% VGS to 0% ID) RG = 4.7 Ω, VGS = 10 V VDD = 400 V, ID = 3 A, RG = 4.7 Ω, VGS = 10 V DS11598 - Rev 4 Min. Typ. Max. Unit - 2.5 - µJ - 9 - µJ page 3/14 STF11N60M2-EP Electrical characteristics Table 7. Switching times Symbol td(on) tr td(off) tf Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time VDD = 300 V, ID = 3.75 A, - 9 - ns Rise time RG = 4.7 Ω, VGS = 10 V - 5.5 - ns Turn-off-delay time (see Figure 14. Test circuit for resistive load switching times and Figure 19. Switching time waveform) - 26 - ns - 8 - ns Min. Typ. Max. Unit Fall time Table 8. Source drain diode Symbol ISD ISDM (1) VSD (2) Parameter Test conditions Source-drain current - 7.5 A Source-drain current (pulsed) - 30 A 1.6 V Forward on voltage VGS = 0 V, ISD = 7.5 A - trr Reverse recovery time ISD = 7.5 A, di/dt = 100 A/µs, - 192 ns Qrr Reverse recovery charge VDD = 60 V - 1.32 µC Reverse recovery current (see Figure 16. Test circuit for inductive load switching and diode recovery times) - 13.8 A trr Reverse recovery time ISD = 7.5 A, di/dt = 100 A/µs, - 262 ns Qrr Reverse recovery charge VDD = 60 V, Tj = 150 °C - 1.74 µC Reverse recovery current (see Figure 16. Test circuit for inductive load switching and diode recovery times) - 13.3 A IRRM IRRM 1. Pulse width is limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DS11598 - Rev 4 page 4/14 STF11N60M2-EP Electrical characteristics curves 2.1 Electrical characteristics curves Figure 1. Safe operating area Figure 2. Thermal impedance K GC20940 10 -1 10 -2 10 -3 10 -4 Figure 3. Output characteristics ID (A) GIPG150320161228TCH 12 10 VDS = 17 V 10 8 VGS = 6 V 6 6 4 4 VGS = 5 V 2 0 0 4 8 12 16 2 VDS (V) Figure 5. Gate charge vs gate-source voltage VGS (V) 600 0.59 VDS VDD = 480 V ID = 7.5 A 500 400 4 4.5 5 5.5 6 6.5 VGS (V) Figure 6. Static drain-source on-resistance R DS(on) (Ω) (V) 8 0 3.5 GIPG150320161229QVG VDS 12 10 t p (s) 10 0 14 VGS = 7 V 8 10 -1 ID (A) GIPG150320161228OCH 12 10 -2 Figure 4. Transfer characteristics VGS = 8, 9, 10 V 14 10 -3 GIPG150320161226RID V GS =10 V 0.58 0.57 0.56 6 300 4 200 2 100 0.53 0 Qg (nC) 0.52 0 0 0 DS11598 - Rev 4 2 4 6 8 10 12 14 16 0.55 0.54 1 2 3 4 5 6 7 I D (A) page 5/14 STF11N60M2-EP Electrical characteristics curves Figure 7. Capacitance variations C (pF) Figure 8. Turn-off switching energy vs drain current E off [μJ] GIPG150320161227CVR 10 3 C ISS 10 GIPG160320160901ALS V DD = 400 V R G = 4.7 Ω V GS = 10 V 15 2 10 C OSS 10 1 10 0 10 -1 10 -1 C RSS f = 1 MHz 10 0 10 1 V DS (V) 10 2 Figure 9. Normalized gate threshold voltage vs temperature VGS(th) (norm) GIPG181120141615ALS 5 0 0 2 3 4 5 I d [A] Figure 10. Normalized on-resistance vs temperature RDS(on) (norm) GIPG181120141628ALS 2.2 1.1 ID = 250 µA 1.8 1.0 VGS = 10 V 1.4 0.9 1.0 0.8 0.6 0.7 0.6 -75 1 -25 25 75 125 Figure 11. Normalized V(BR)DSS vs temperature V(BR)DSS GIPG191120141457ALS (norm) 0.2 -75 TJ(°C) -25 25 75 125 TJ(°C) Figure 12. Output capacitance stored energy E OSS (µJ) GIPG150320161230EOS 3.0 1.08 2.5 1.04 2.0 1.00 ID = 1mA 1.5 0.96 1.0 0.92 0.88 -75 DS11598 - Rev 4 0.5 -25 25 75 125 TJ(°C) 0.0 0 100 200 300 400 500 600 V DS (V) page 6/14 STF11N60M2-EP Electrical characteristics curves Figure 13. Source-drain diode forward characteristics V SD (V) GIPG150320161227SDF 1.1 T j = -50 °C 1.0 0.9 T j = 25 °C 0.8 T j = 150 °C 0.7 0.6 0.5 0 DS11598 - Rev 4 1 2 3 4 5 6 7 I SD (A) page 7/14 STF11N60M2-EP Test circuits 3 Test circuits Figure 14. Test circuit for resistive load switching times Figure 15. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 16. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A B B 3.3 µF D G + VD 100 µH fast diode B Figure 17. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform V(BR)DSS ton VD td(on) 90% IDM tf 90% 10% 10% 0 ID VDD toff td(off) tr VDD VGS 0 VDS 90% 10% AM01472v1 AM01473v1 DS11598 - Rev 4 page 8/14 STF11N60M2-EP Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS11598 - Rev 4 page 9/14 STF11N60M2-EP TO-220FP package information 4.1 TO-220FP package information Figure 20. TO-220FP package outline 7012510_Rev_12_B DS11598 - Rev 4 page 10/14 STF11N60M2-EP TO-220FP package information Table 9. TO-220FP package mechanical data Dim. mm Min. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 DS11598 - Rev 4 Typ. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 page 11/14 STF11N60M2-EP Revision history Table 10. Document revision history Date Revision Changes 11-Apr-2016 1 First release. 07-Oct-2016 2 Document status changed from preliminary to production data. Removed document maturity status from cover page. 02-Mar-2018 3 Updated Table 1. Absolute maximum ratings, Table 4. On/off states, Table 5. Dynamic and Table 8. Source drain diode. Updated Figure 1. Safe operating area, Figure 3. Output characteristics, Figure 4. Transfer characteristics and Figure 5. Gate charge vs gate-source voltage. Minor text changes Modified Table 1. Absolute maximum ratings, Table 5. Dynamic and Table 8. Source drain diode. 23-Apr-2018 4 Modified Figure 1. Safe operating area. Minor text changes. DS11598 - Rev 4 page 12/14 STF11N60M2-EP Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.1 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 DS11598 - Rev 4 page 13/14 STF11N60M2-EP IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS11598 - Rev 4 page 14/14