STB11N65M5, STD11N65M5
STF11N65M5, STP11N65M5
Datasheet
N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ M5 Power MOSFETs
in a DPAK, D²PAK, TO-220FP and TO-220 packages
TAB
Features
TAB
1
3
DPAK
D2 PAK
2 3
1
Order code
STD11N65M5
2
3
1
2
3
STF11N65M5
TO-220
TO-220FP
Tjmax.
RDS(on)max.
ID
0.48 Ω
9A
STB11N65M5
TAB
1
VDS @
D(2, TAB)
G(1)
710 V
STP11N65M5
•
Extremely low RDS(on)
•
•
•
Low gate charge and input capacitance
Excellent switching performance
100% avalanche tested
Applications
S(3)
AM01475v1_noZen
•
Switching applications
Description
Product status
STB11N65M5
These devices are N-channel Power MOSFET based on the MDmesh™ M5
innovative vertical process technology combined with the well-known PowerMESH™
horizontal layout. The resulting products offer extremely low on-resistance, making
them particularly suitable for applications requiring high power and superior
efficiency.
STD11N65M5
STF11N65M5
STP11N65M5
DS8920 - Rev 3 - May 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Value
Symbol
D2PAK
Parameter
TO-220FP
DPAK
Unit
TO-220
VGS
Gate-source voltage
±25
V
ID
Drain current (continuous) at TC = 25 °C
9
ID
Drain current (continuous) at TC = 100 °C
5.6
5.6 (1)
A
IDM (2)
Drain current (pulsed)
36
36 (1)
A
PTOT
Total dissipation at TC = 25 °C
85
25
W
dv/dt
(3)
Peak diode recovery voltage slope
9
15
2500
leads to external heat sink (t = 1 s; Tc = 25 °C)
Tj
Operating junction temperature range
Tstg
-55 to 150
Storage temperature range
A
V/ns
Insulation withstand voltage (RMS) from all three
VISO
(1)
V
°C
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤ 9 A, di/dt ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD = 400 V.
Table 2. Thermal data
Symbol
Value
Parameter
D2PAK
Rthj-case
Thermal resistance junction-case
Rthj-amb
Thermal resistance junction-ambient
Rthj-pcb
(1)
DPAK
TO-220FP
TO-220
5.0
1.47
1.47
Thermal resistance junction-pcb
62.5
30
Unit
°C/W
°C/W
50
°C/W
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Table 3. Avalanche characteristics
Symbol
DS8920 - Rev 3
Parameter
IAR
Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max)
EAS
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
Unit
2
A
130
mJ
page 2/30
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5
Electrical characteristics
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
V(BR)DSS
Parameter
Drain-source
Breakdown voltage
Test condition
ID = 1 mA, VGS = 0 V
Min.
Typ.
Max.
650
Unit
V
VGS = 0 V, VDS = 650 V
1
µA
VGS = 0 V, VDS = 650 V,
TC = 125 °C(1)
100
µA
±100
nA
4
5
V
0.43
0.48
Ω
Typ.
Max.
Unit
-
pF
IDSS
Zero gate voltage drain
current
IGSS
Gate body leakage current
VDS = 0 V, VGS = ±25 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 4.5 A
3
1. Defined by design, not subject to production test.
Table 5. Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
Co(tr) (1)
Equivalent capacitance time
related
Co(er) (2)
Equivalent capacitance
energy related
Test condition
Min.
644
VDS = 100 V, f = 1 MHz, VGS = 0 V
-
18
2.5
-
55
-
pF
-
17
-
pF
-
5
-
Ω
-
nC
VDS = 0 to 520 V, VGS = 0 V
Rg
Gate input resistance
f = 1 MHz open drain
Qg
Total gate charge
VDD = 520 V, ID = 4.5 A,
Qgs
Gate-source charge
Qgd
Gate-drain charge
VGS = 0 to 10 V
(see Figure 20. Test circuit for gate
charge behavior)
17
-
4.6
8.5
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases
from 0 to 80% VDSS.
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases
from 0 to 80% VDSS.
Table 6. Switching times
Symbol
Test condition
Min.
Typ.
td(v)
Voltage delay time
VDD = 400 V, ID = 7.5 A,
23
tr(v)
Voltage rise time
RG = 4.7 Ω, VGS = 10 V
10
Crossing time
(see Figure 21. Test circuit for
inductive load switching and diode
recovery times and Figure
24. Switching time waveform)
tc(off)
tf(i)
DS8920 - Rev 3
Parameter
Fall time
-
13
Max.
Unit
-
ns
13.5
page 3/30
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5
Electrical characteristics
Table 7. Source drain diode
Symbol
ISD
Parameter
Test condition
Source-drain current
Min.
Typ.
9
-
ISDM (1)
Source-drain current (pulsed)
VSD (2)
Forward on voltage
ISD = 9 A, VGS = 0 V
trr
Reverse recovery time
ISD = 9 A, di/dt = 100 A/µs
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
VDD = 100 V
(see Figure 21. Test circuit for
inductive load switching and diode
recovery times)
trr
Reverse recovery time
ISD = 9 A, di/dt = 100 A/µs
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
VDD = 100 V, Tj = 150 °C (see Figure
21. Test circuit for inductive load
switching and diode recovery times)
36
-
-
-
Max.
1.5
Unit
A
V
232
ns
2
μC
17.5
A
328
ns
2.8
μC
17
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
DS8920 - Rev 3
page 4/30
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5
Electrical characteristics curves
2.1
Electrical characteristics curves
Figure 1. Safe operating area for DPAK
ID
(A)
100
10µs
100µs
Tj=150°C
Tc=25°C
10-1
Single
pulse
10-2
10-1
101
100
100
1ms
10ms
102
10-1
10-2
10-5
VDS(V)
Figure 3. Safe operating area for TO-220FP
10-4
10-3
10-2
10-1
tp (s)
Figure 4. Thermal impedance for TO-220FP
AM15399v1
ID
(A)
n)
S(
o
O
pe
m ratio
ite n
d
by in th
m is
ax ar
RD ea
is
101
10µs
100µs
Li
100
GC20460
K
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
D
S( is
on
)
101
Figure 2. Thermal impedance DPAK
AM15398v1
1ms
10ms
Tj=150°C
Tc=25°C
10-1
Single
pulse
10-2
10-1
100
101
102
VDS(V)
Figure 5. Safe operating area for TO-220 and D2PAK
AM15400v1
10µs
100µs
1ms
Li
100
O
pe
m ratio
ite n
d
by in th
m is
ax ar
R ea
i
D
S( s
on
)
ID
(A)
101
Figure 6. Thermal impedance for TO-220 and D2PAK
10ms
10-1
10-2
10-1
DS8920 - Rev 3
Tj=150°C
Tc=25°C
Single
pulse
100
101
102
VDS(V)
page 5/30
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5
Electrical characteristics curves
Figure 8. Output characterisics
ID
(A)
Figure 9. Transfer characteristics
AM15401v1
VGS=10V
16
8V
14
12
10
10
8
8
6
6
4
4
2
2
0
VDS=25V
14
7V
12
AM15402v1
ID
(A)
16
6V
0
5
10
25 VDS(V)
20
15
Figure 10. Gate charge vs gate-source voltage
AM15403v1
VGS
(V)
12
VDD=520V
VDS
(V)
ID=4.5A
500
10
400
3
4
5
7
6
9 VGS(V)
8
Figure 11. Static drain-source on resistance
AM15404v1
RDS(on)
(W)
0.55
VGS=10V
0.5
0.45
8
300
0.4
6
200
4
100
2
0
0
0
5
10
15
20
0
Qg (nC)
AM15405v1
1000
0.3
0.25
0
1
2
3
4
5
6
7
ID(A)
8
Figure 13. Output capacitance stored energy
Figure 12. Capacitance variations
C
(pF)
0.35
Ciss
AM15406v1
Eoss
(µJ)
3.5
3
2.5
100
2
1.5
Coss
10
Crss
1
0.1
DS8920 - Rev 3
1
10
100
VDS(V)
1
0.5
0
0
200
400
600
VDS(V)
page 6/30
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5
Electrical characteristics curves
Figure 14. Normalized on-resistance vs temperature
AM05460v1
RDS(on)
(norm)
2.1
Figure 15. Normalized gate threshold voltage vs
temperature
AM05459v1
VGS(th)
(norm)
1.10
VGS = 10 V
ID = 4.5 A
VDS = VGS
ID = 250 µA
1.9
1.7
1.00
1.5
1.3
0.90
1.1
0.9
0.80
0.7
0.5
-50 -25
25
0
50
0.70
-50 -25
TJ(°C)
75 100
Figure 16. Drain-source diode forward characteristics
AM05461v1
VSD
(V)
0
25
50
75 100
TJ(°C)
Figure 17. Normalized V(BR)DSS vs temperature
AM10399v1
V(BR)DSS
(norm)
TJ=-50°C
1.08
1.2
ID = 1mA
1.06
1.0
1.04
0.8
1.02
TJ=25°C
1.00
0.6
TJ=150°C
0.98
0.4
0.96
0.2
0
0.94
0
2
4
6
8
0.92
-50 -25
10 ISD(A)
0
25
50
75 100
TJ(°C)
Figure 18. Switching energy vs gate resistance
AM15407v1
E (µJ)
VDD=400V
VGS=10V
ID=6A
100
Eon
80
60
40
Eoff
20
0
DS8920 - Rev 3
0
5
10 15
20 25 30 35 40 45 RG(W)
page 7/30
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5
Test circuits
3
Test circuits
Figure 19. Test circuit for resistive load switching times
Figure 20. Test circuit for gate charge behavior
VDD
12 V
2200
+ μF
3.3
μF
VDD
VD
IG= CONST
VGS
RG
1 kΩ
100 nF
RL
VGS
47 kΩ
+
pulse width
D.U.T.
2.7 kΩ
2200
μF
pulse width
D.U.T.
100 Ω
VG
47 kΩ
1 kΩ
AM01469v1
AM01468v1
Figure 21. Test circuit for inductive load switching and
diode recovery times
D
G
A
D.U.T.
S
25 Ω
A
B
L
A
B
3.3
µF
D
G
+
VD
100 µH
fast
diode
B
Figure 22. Unclamped inductive load test circuit
RG
1000
+ µF
2200
+ µF
VDD
3.3
µF
VDD
ID
D.U.T.
S
D.U.T.
Vi
_
pulse width
AM01471v1
AM01470v1
Figure 23. Unclamped inductive waveform
V(BR)DSS
Figure 24. Switching time waveform
Concept waveform for Inductive Load Turn-off
Id
VD
90%Vds
90%Id
Tdelay -off
IDM
Vgs
90%Vgs
on
ID
Vgs(I(t ))
VDD
VDD
10%Vds
10%Id
Vds
Trise
AM01472v1
DS8920 - Rev 3
Tfall
Tcross --over
AM05540v2_for_M5
page 8/30
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.
DS8920 - Rev 3
page 9/30
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5
D²PAK (TO-263) type A package information
4.1
D²PAK (TO-263) type A package information
Figure 25. D²PAK (TO-263) type A package outline
0079457_25
DS8920 - Rev 3
page 10/30
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5
D²PAK (TO-263) type A package information
Table 8. D²PAK (TO-263) type A package mechanical data
Dim.
mm
Min.
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
7.75
8.00
D2
1.10
1.30
1.50
E
10.00
E1
8.30
8.50
8.70
E2
6.85
7.05
7.25
e
10.40
2.54
e1
4.88
5.28
H
15.00
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
DS8920 - Rev 3
Typ.
0.40
0°
8°
page 11/30
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5
D²PAK (TO-263) type A package information
Figure 26. D²PAK (TO-263) recommended footprint (dimensions are in mm)
Footprint
DS8920 - Rev 3
page 12/30
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5
D²PAK packing information
4.2
D²PAK packing information
Figure 27. D²PAK tape outline
DS8920 - Rev 3
page 13/30
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5
D²PAK packing information
Figure 28. D²PAK reel outline
T
40mm min.
access hole
at slot location
B
D
C
N
A
G measured
at hub
Tape slot
in core for
tape start
2.5mm min.width
Full radius
AM06038v1
Table 9. D²PAK tape and reel mechanical data
Tape
Dim.
DS8920 - Rev 3
Reel
mm
mm
Dim.
Min.
Max.
Min.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
Max.
330
13.2
26.4
30.4
P0
3.9
4.1
P1
11.9
12.1
Base quantity
1000
P2
1.9
2.1
Bulk quantity
1000
R
50
T
0.25
0.35
W
23.7
24.3
page 14/30
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5
DPAK (TO-252) type A package information
4.3
DPAK (TO-252) type A package information
Figure 29. DPAK (TO-252) type A package outline
0068772_A_25
DS8920 - Rev 3
page 15/30
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5
DPAK (TO-252) type A package information
Table 10. DPAK (TO-252) type A mechanical data
Dim.
mm
Min.
Max.
A
2.20
2.40
A1
0.90
1.10
A2
0.03
0.23
b
0.64
0.90
b4
5.20
5.40
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
D1
4.95
E
6.40
E1
4.60
4.70
4.80
e
2.159
2.286
2.413
e1
4.445
4.572
4.699
H
9.35
10.10
L
1.00
1.50
(L1)
2.60
2.80
3.00
L2
0.65
0.80
0.95
L4
0.60
R
V2
DS8920 - Rev 3
Typ.
5.10
5.25
6.60
1.00
0.20
0°
8°
page 16/30
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5
DPAK (TO-252) type C2 package information
4.4
DPAK (TO-252) type C2 package information
Figure 30. DPAK (TO-252) type C2 package outline
0068772_C2_25
DS8920 - Rev 3
page 17/30
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5
DPAK (TO-252) type C2 package information
Table 11. DPAK (TO-252) type C2 mechanical data
Dim.
mm
Min.
Typ.
Max.
A
2.20
2.30
2.38
A1
0.90
1.01
1.10
A2
0.00
0.10
b
0.72
0.85
b4
5.13
c
0.47
0.60
c2
0.47
0.60
D
6.00
D1
5.10
E
6.50
E1
5.20
e
2.186
2.286
2.386
H
9.80
10.10
10.40
L
1.40
1.50
1.70
L1
L2
6.20
5.60
6.60
6.70
5.50
0.90
1.25
0.51 BSC
0.60
L6
DS8920 - Rev 3
6.10
5.46
2.90 REF
L3
L4
5.33
0.80
1.00
1.80 BSC
θ1
5°
7°
9°
θ2
5°
7°
9°
V2
0°
8°
page 18/30
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5
DPAK (TO-252) type E package information
4.5
DPAK (TO-252) type E package information
Figure 31. DPAK (TO-252) type E package outline
0068772_type-E_rev.25
DS8920 - Rev 3
page 19/30
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5
DPAK (TO-252) type E package information
Table 12. DPAK (TO-252) type E mechanical data
Dim.
A
mm
Min.
Typ.
Max.
2.18
2.39
A2
0.13
b
0.65
0.884
b4
4.95
5.46
c
0.46
0.61
c2
0.46
0.60
D
5.97
6.22
D1
5.21
E
6.35
E1
4.32
6.73
e
2.286
e1
4.572
H
9.94
10.34
L
1.50
1.78
L1
L2
2.74
0.89
L4
1.27
1.02
Figure 32. DPAK (TO-252) recommended footprint (dimensions are in mm)
FP_0068772_25
DS8920 - Rev 3
page 20/30
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5
DPAK (TO-252) packing information
4.6
DPAK (TO-252) packing information
Figure 33. DPAK (TO-252) tape outline
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
B1
K0
For machine ref. only
including draft and
radii concentric around B0
W
B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
DS8920 - Rev 3
page 21/30
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5
DPAK (TO-252) packing information
Figure 34. DPAK (TO-252) reel outline
T
40mm min.
access hole
at slot location
B
D
C
N
A
G measured
at hub
Tape slot
in core for
tape start
2.5mm min.width
Full radius
AM06038v1
Table 13. DPAK (TO-252) tape and reel mechanical data
Tape
Dim.
mm
mm
Dim.
Min.
Max.
A0
6.8
7
A
B0
10.4
10.6
B
1.5
12.1
C
12.8
1.6
D
20.2
G
16.4
50
B1
DS8920 - Rev 3
Reel
Min.
Max.
330
13.2
D
1.5
D1
1.5
E
1.65
1.85
N
F
7.4
7.6
T
K0
2.55
2.75
P0
3.9
4.1
Base qty.
2500
P1
7.9
8.1
Bulk qty.
2500
P2
1.9
2.1
R
40
T
0.25
0.35
W
15.7
16.3
18.4
22.4
page 22/30
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5
TO-220FP package information
4.7
TO-220FP package information
Figure 35. TO-220FP package outline
7012510_Rev_12_B
DS8920 - Rev 3
page 23/30
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5
TO-220FP package information
Table 14. TO-220FP package mechanical data
Dim.
mm
Min.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
DS8920 - Rev 3
Typ.
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
page 24/30
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5
TO-220 type A package information
4.8
TO-220 type A package information
Figure 36. TO-220 type A package outline
0015988_typeA_Rev_21
DS8920 - Rev 3
page 25/30
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5
TO-220 type A package information
Table 15. TO-220 type A package mechanical data
Dim.
mm
Min.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.55
c
0.48
0.70
D
15.25
15.75
D1
DS8920 - Rev 3
Typ.
1.27
E
10.00
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13.00
14.00
L1
3.50
3.93
L20
16.40
L30
28.90
øP
3.75
3.85
Q
2.65
2.95
page 26/30
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5
Ordering information
5
Ordering information
Table 16. Order codes
Order code
Package
STB11N65M5
D2PAK
STD11N65M5
DPAK
STF11N65M5
STP11N65M5
DS8920 - Rev 3
Marking
11N65M5
TO-220FP
TO-220
Packing
Tape and reel
Tube
page 27/30
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5
Revision history
Table 17. Document revision history
Date
Version
23-Feb-2012
1
Changes
First release.
– Minor text changes in cover page
– Added IPAK packages
03-Dec-2012
2
– Added Section 2.1: Electrical characteristics (curves)
– Updated Section 5: Packaging mechanical data
– Modified: note 2 on Table 2
– Updated: mechanical data for TO-220FP package
The part number STU11N65M5 has been moved to a separate datasheet.
Removed maturity status indication from cover page. The document status is
production data.
02-May-2018
3
Updated title and features in cover page, Section 1 Electrical ratings, Section
2 Electrical characteristics, Section 2.1 Electrical characteristics curves and
Section 4 Package information.
Minor text changes.
DS8920 - Rev 3
page 28/30
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
4.1
D²PAK (TO-263) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.2
D²PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.3
DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.4
DPAK (TO-252) type C2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.5
DPAK (TO-252) type E package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.6
DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.7
TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
4.8
TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .27
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28
DS8920 - Rev 3
page 29/30
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5
IMPORTANT NOTICE – PLEASE READ CAREFULLY
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2018 STMicroelectronics – All rights reserved
DS8920 - Rev 3
page 30/30