STF11NM50N

STD11NM50N STF11NM50N, STP11NM50N N-channel 500 V, 0.4 Ω, 8.5 A MDmesh™ II Power MOSFET in DPAK, TO-220FP and TO-220 Features Order codes VDSS @TJmax RDS(on) max ID 3 1 STD11NM50N STF11NM50N STP11NM50N 3 550 V < 0.47 Ω 8.5 A DPAK 1 2 TO-220 ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance 3 1 2 TO-220FP Application Switching applications Figure 1. Internal schematic diagram Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. $ ' 3 !-V Table 1. Device summary Order codes Marking Package Packaging STD11NM50N 11NM50N DPAK Tape and reel STF11NM50N 11NM50N TO-220FP Tube STP11NM50N 11NM50N TO-220 Tube November 2010 Doc ID 17156 Rev 3 1/16 www.st.com 16 Contents STD11NM50N, STF11NM50N, STP11NM50N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 .............................................. 9 Doc ID 17156 Rev 3 STD11NM50N, STF11NM50N, STP11NM50N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220 DPAK TO-220FP VDS Drain-source voltage (VGS = 0) 500 V VGS Gate-source voltage ± 25 V ID ID IDM (2) PTOT dv/dt (3) Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C (1) 6 34 34(1) A 25 W 70 Peak diode recovery voltage slope 15 Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature A 6 70 VISO Tj 8.5 (1) 8.5 A V/ns 2500 V - 55 to 150 °C 150 °C Max. operating junction temperature 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 8.5 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS,VDD = 80% V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit TO-220 Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Rthj-pcb Thermal resistance junction-pcb max(1) Tl Maximum lead temperature for soldering purpose DPAK 1.79 62.5 TO-220FP 5 °C/W 62.5 °C/W 50 300 °C/W 300 °C 1. When mounted on 1inch² FR-4 board, 2 oz Cu Table 4. Thermal data Symbol Parameter IAR Avalanche current, repetetive or not EAS Single pulse avalanche energy (2) repetetive(1) Value Unit 3 A 150 mJ 1. Pulse width limited by TJMAX. 2. Starting Tj = 25 °C, ID = IAR, VDD = 50 V. Doc ID 17156 Rev 3 3/16 Electrical characteristics 2 STD11NM50N, STF11NM50N, STP11NM50N Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 500 V IDSS VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) 100 nA 3 4 V 0.4 0.47 Ω Min. Typ. Max. Unit VGS = ± 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance Table 6. Symbol 2 VGS = 10 V, ID = 4.5 A Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 - 547 42 2 - pF pF pF Output equivalent capacitance VDS = 0 to 400 V, VGS = 0 - 210 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 5.8 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 400 V, ID = 8.5 A, VGS = 10 V (see Figure 18) - 19 3.7 10 - nC nC nC Ciss Coss Crss Coss eq.(1) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS. 4/16 Doc ID 17156 Rev 3 STD11NM50N, STF11NM50N, STP11NM50N Table 7. Symbol td(on) tr td(off) tf Table 8. Switching times Parameter Test conditions Turn-on delay time Rise time Turn-off delay time Fall time VDD = 250 V, ID = 4.25 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19) Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage IRRM trr Qrr IRRM Min. Typ. - 8 10 33 10 Min. Typ. Max Unit - ns ns ns ns Source drain diode Symbol trr Qrr Electrical characteristics Test conditions Max. Unit - 8.5 34 A A ISD = 8.5 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 8.5 A, di/dt = 100 A/µs VDD = 60 V (see Figure 22) - 230 2.1 18 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 8.5 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 22) - 275 2.5 18 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 17156 Rev 3 5/16 Electrical characteristics STD11NM50N, STF11NM50N, STP11NM50N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 Figure 5. Thermal impedance for TO-220FP Figure 7. Thermal impedance for DPAK !-V )$ ! / ,I PER M AT ITE IO D NI BY N M THI AX SA 2 RE A IS  $ 3 ON —S  —S MS MS 4J # 4C #  3INGLE PULSE   Figure 4.    Safe operating area for TO-220FP !-V )$ ! ON IS —S $ 3 / ,I PER M AT ITE IO D NI BY N M THI AX SA 2 RE A  6$36  —S MS MS 4J # 4C #  3INGLE PULSE   Figure 6.    Safe operating area for DPAK !-V ON —S $ 3 / ,I PER M AT ITE IO D NI BY N M THI AX SA 2 RE A IS )$ !  6$36  —S MS MS 4J # 4C #  3INGLE PULSE   6/16    6$36 Doc ID 17156 Rev 3 STD11NM50N, STF11NM50N, STP11NM50N Figure 8. Electrical characteristics Output characteristics Figure 9. Transfer characteristics !-V )$ ! !-V )$ ! 6'36  6$36    6         6               6$36      6'36 Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance !-V 6'3 6 6$3 6'3 6$$6 )$!   /HM          6'36          !-V 2$3ON        1GN# Figure 12. Capacitance variations         )$! Figure 13. Output capacitance stored energy !-V # P&  !-V %OSS —*   #ISS     #OSS   #RSS       6$36 Doc ID 17156 Rev 3        6$36 7/16 Electrical characteristics STD11NM50N, STF11NM50N, STP11NM50N Figure 14. Normalized gate threshold voltage vs temperature !-V 6'3TH NORM Figure 15. Normalized on resistance vs temperature NORM )$—!                 4* #    Figure 16. Normalized BVDSS vs temperature !-V "6$33 NORM )$M!           8/16      !-V 2$3ON 4* # Doc ID 17156 Rev 3 )$!      4* # STD11NM50N, STF11NM50N, STP11NM50N 3 Test circuits Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 21. Unclamped inductive waveform AM01471v1 Figure 22. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 17156 Rev 3 10% AM01473v1 9/16 Package mechanical data 4 STD11NM50N, STF11NM50N, STP11NM50N Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/16 Doc ID 17156 Rev 3 STD11NM50N, STF11NM50N, STP11NM50N Table 9. Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Figure 23. TO-220FP drawing L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_K Doc ID 17156 Rev 3 11/16 Package mechanical data STD11NM50N, STF11NM50N, STP11NM50N TO-252 (DPAK) mechanical data DIM. mm. min. typ max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 1 R V2 0.20 8o 0o 0068772_G 12/16 Doc ID 17156 Rev 3 STD11NM50N, STF11NM50N, STP11NM50N Package mechanical data TO-220 type A mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max 4.60 0.88 1.70 0.70 15.75 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 16.40 28.90 3.75 2.65 3.85 2.95 0015988_Rev_S Doc ID 17156 Rev 3 13/16 Packaging mechanical data 5 STD11NM50N, STF11NM50N, STP11NM50N Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 14/16 inch MIN. MAX. 12.1 0.476 1.6 0.059 0.063 D 1.5 D1 1.5 E 1.65 1.85 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.153 0.161 0.059 0.065 0.073 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 1.574 16.3 0.618 0.641 Doc ID 17156 Rev 3 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 0.059 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD11NM50N, STF11NM50N, STP11NM50N 6 Revision history Revision history Table 10. Document revision history Date Revision Changes 22-Feb-2010 1 First release. 26-Apr-2010 2 Updated Table 8: Source drain diode. 24-Nov-2010 3 New value inserted in Table 6: Dynamic. Doc ID 17156 Rev 3 15/16 STD11NM50N, STF11NM50N, STP11NM50N Please Read Carefully: Information in this document is provided solely in connection with ST products. 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