STF12N65M5

STF12N65M5, STP12N65M5 Datasheet N-channel 650 V, 390 mΩ typ., 8.5 A MDmesh M5 Power MOSFET in a TO-220FP and TO-220 packages Features TAB Order code VDS @ TJ max. RDS(on) max. ID 710 V 430 mΩ 8.5 A STF12N65M5 1 TO-220FP 2 3 1 2 3 TO-220 D(2, TAB) STP12N65M5 • Extremely low RDS(on) • • • Low gate charge and input capacitance Excellent switching performance 100% avalanche tested Applications • G(1) Switching applications Description S(3) AM01475v1_noZen This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency. Product status links STF12N65M5 STP12N65M5 Product summary Order code STF12N65M5 Marking 12N65M5 Package TO-220FP Packing Tube Order code STP12N65M5 Marking 12N65M5 Package TO-220 Packing Tube DS6117 - Rev 6 - March 2022 For further information contact your local STMicroelectronics sales office. www.st.com STF12N65M5, STP12N65M5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID Value TO-220FP TO-220 Unit 650 V 25 V Drain current (continuous) at TC = 25 °C 8.5(1) 8.5 Drain current (continuous) at TC = 100 °C 5.4(1) 5.4 A IDM(2) Drain current (pulsed) 34 34 A PTOT Total power dissipation at TC = 25 °C 25 70 W IAR Avalanche current, repetitive or not repetitive (pulse width limited by TJ max.) 2.5 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) 150 mJ Peak diode recovery voltage slope 15 V/ns dv/dt(3) VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, TC = 25 °C) Tstg Storage temperature range TJ Operating junction temperature range 2.5 kV -55 to 150 °C °C 1. Limited by maximum junction temperature. 2. Pulse width is limited by safe operating area. 3. ISD ≤ 8.5 A, di/dt ≤ 400 A/μs, VDS (peak) < V(BR)DSS, VDD = 400 V. Table 2. Thermal data Symbol DS6117 - Rev 6 Parameter RthJC Thermal resistance, junction-to-case RthJA Thermal resistance, junction-to-ambient Value TO-220FP TO-220 5.00 1.79 62.5 Unit °C/W °C/W page 2/15 STF12N65M5, STP12N65M5 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified. Table 3. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage Min. VGS = 0 V, ID = 1 mA Typ. 650 Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 4.3 A VGS = 0 V, VDS = 650 V, TC = 125 Unit V VGS = 0 V, VDS = 650 V IDSS Max. 1 °C(1) 100 µA 100 nA 4 5 V 390 430 mΩ Min. Typ. Max. Unit - 900 - pF - 22 - pF - 2 - pF - 64 - pF - 21 - pF - 5 - Ω - 20 - nC - 4.8 - nC - 8.3 - nC 3 1. Specified by design, not tested in production. Table 4. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Co(tr)(1) Equivalent capacitance time related Co(er)(2) Equivalent capacitance energy related Rg Intrinsic gate resistance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 V VDS = 0 to 520 V, VGS = 0 V f = 1 MHz, ID = 0 A VDD = 520 V, ID = 4.25 A, VGS = 0 to 10 V (see Figure 17. Test circuit for gate charge behavior) 1. Co(tr) is an equivalent capacitance that provides the same charging time as Coss while VDS is rising from 0 V to the stated value. 2. Co(er) is an equivalent capacitance that provides the same stored energy as Coss while VDS is rising from 0 V to the stated value. Table 5. Switching times Symbol Test conditions Min. Typ. Max. Unit td(v) Voltage delay time VDD = 400 V, ID = 5 A, - 22.6 - ns tr(v) Voltage rise time RG = 4.7 Ω, VGS = 10 V - 17.6 - ns tf(i) Current fall time (see Figure 18. Test circuit for inductive load switching and diode recovery times and Figure 21. Switching time waveform) - 15.6 - ns - 23.4 - ns tc(off) DS6117 - Rev 6 Parameter Crossing time page 3/15 STF12N65M5, STP12N65M5 Electrical characteristics Table 6. Source-drain diode Symbol ISD ISDM (1) VSD(2) Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 8.5 A Source-drain current (pulsed) - 34 A 1.5 V Forward on voltage ISD = 8.5 A, VGS = 0 V - trr Reverse recovery time ISD = 8.5 A, di/dt = 100 A/µs, - 230 ns Qrr Reverse recovery charge VDD = 100 V - 2.2 µC IRRM Reverse recovery current (see Figure 18. Test circuit for inductive load switching and diode recovery times) - 19 A trr Reverse recovery time ISD = 8.5 A, di/dt = 100 A/µs, - 280 ns Qrr Reverse recovery charge VDD = 100 V, TJ = 150 °C - 2.7 µC Reverse recovery current (see Figure 18. Test circuit for inductive load switching and diode recovery times) - 19 A IRRM 1. Pulse width is limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%. DS6117 - Rev 6 page 4/15 STF12N65M5, STP12N65M5 Electrical characteristics curves 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO-220FP ID (A) 101 100 AM05573v1 ea ar s (on) i th S in R D n y it o d b ra te pe i O s lim i K 10-2 10-1 10µs 100µs 10ms 100 101 VDS (V) 102 AM05572v1 ID (A) 100 Zth = k * RthJC δ = tp / Ƭ 10-2 TJ = 150 °C TC = 25 °C Single pulse Figure 3. Safe operating area for TO-220 101 GC20940 10-1 1ms 10-1 Figure 2. Normalized transient thermal impedance for TO-220FP ea ar is (on) h t S in R D n y io d b t ra te pe i O s lim i 10-3 10-4 tp Ƭ 10-3 10-2 10-2 10-1 10µs 100µs 1ms Zth = k * RthJC δ = tp / Ƭ TJ = 150 °C TC = 25 °C Single pulse 100 101 102 tp Ƭ VDS (V) Figure 5. Typical output characteristics AM05575v1 ID (A) VGS=10V 14 tp (s) 100 Figure 4. Normalized transient thermal impedance for TO-220 10ms 10-1 10-1 Figure 6. Typical transfer characteristics ID (A) AM05576v1 12 VDS= 20V 12 10 7V 10 8 8 6 6 6V 4 2 2 0 0 DS6117 - Rev 6 4 5V 10 30 VDS 0 0 4 8 VGS(V) page 5/15 STF12N65M5, STP12N65M5 Electrical characteristics curves Figure 7. Typical gate charge characteristics AM05578v1 VGS (V) VDD=520V 12 VDS (V) 500 ID=4.25A VDS AM05577v1 RDS(on) (mΩ) 430 VGS = 10 V 380 10 400 8 300 6 200 4 330 280 230 180 100 2 0 Figure 8. Typical drain-source on-resistance 0 5 10 0 Qg 15 Figure 9. Typical capacitance characteristics C (pF) AM05579v1 130 80 0 1 2 3 4 5 6 7 8 9 ID (A) Figure 10. Typical output capacitance stored energy Eoss (µJ) 4.0 AM05580v1 3.5 103 Ciss 3.0 2.5 102 101 100 10-1 Coss f = 1 MHz Crss 100 101 102 Figure 11. Normalized gate threshold voltage vs temperature VGS(th) (norm.) 300 VDS (V) AM05581v1 500 600 DS Figure 12. Normalized on-resistance vs temperature AM05501v2 RDS(on) (norm.) D= 4.25 A VGS= 10 V ID = 250 µA 3 8 J (°C) DS6117 - Rev 6 J page 6/15 STF12N65M5, STP12N65M5 Electrical characteristics curves Figure 13. Normalized breakdown voltage vs temperature Figure 14. Typical reverse diode forward characteristics AM05583v1 V(BR)DSS (norm.) AM05584v1 VSD (V) 1.07 TJ =-50°C 1.2 1.05 TJ =25°C 1.0 ID = 1 mA 1.03 0.8 1.01 0.6 0.99 0.4 0.97 0.2 0.95 0.93 -50 -25 TJ =150°C 0 25 50 75 100 0 0 TJ (°C) 20 30 40 ISD Figure 15. Typical switching energy vs gate resistance AM05585v1 (μ J) ID=5A VDD=400V 30 20 10 DS6117 - Rev 6 30 40 G (Ω) page 7/15 STF12N65M5, STP12N65M5 Test circuits 3 Test circuits Figure 17. Test circuit for gate charge behavior Figure 16. Test circuit for resistive load switching times VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 19. Unclamped inductive load test circuit Figure 18. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A A B B B L 100 µH fast diode 3.3 µF D G + RG VD 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S _ D.U.T. Vi pulse width AM01470v1 AM01471v1 Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform ID V(BR)DSS VDS 90%ID 90%VDS VD IDM VGS 90%VGS ID VDD VDD 10%VDS 10%ID tr VDS td(V) AM01472v1 DS6117 - Rev 6 tf ID tc(off) AM05540v2 page 8/15 STF12N65M5, STP12N65M5 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-220FP package information Figure 22. TO-220FP package outline 7012510_Rev_13_B DS6117 - Rev 6 page 9/15 STF12N65M5, STP12N65M5 TO-220FP package information Table 7. TO-220FP package mechanical data Dim. mm Min. Max. A 4.40 4.60 B 2.50 2.70 D 2.50 2.75 E 0.45 0.70 F 0.75 1.00 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.20 G1 2.40 2.70 H 10.00 10.40 L2 DS6117 - Rev 6 Typ. 16.00 L3 28.60 30.60 L4 9.80 10.60 L5 2.90 3.60 L6 15.90 16.40 L7 9.00 9.30 Dia 3.00 3.20 page 10/15 STF12N65M5, STP12N65M5 TO-220 type A package information 4.2 TO-220 type A package information Figure 23. TO-220 type A package outline 0015988_typeA_Rev_23 DS6117 - Rev 6 page 11/15 STF12N65M5, STP12N65M5 TO-220 type A package information Table 8. TO-220 type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 Slug flatness DS6117 - Rev 6 Typ. 0.03 0.10 page 12/15 STF12N65M5, STP12N65M5 Revision history Table 9. Document revision history Date Version Changes 24-Feb-2009 1 First release. 27-Feb-2009 2 Corrected package information on first page. 21-Jan-2010 3 Document status promoted from preliminary data to datasheet. 29-Jun-2010 4 22-Jun-2011 5 – Figure 15: Normalized on resistance vs temperature has been updated. – VGS value in Table 4 has been corrected. Updated Figure 18 and Figure 20. Updated gate charge in Table 5 and switching time in Table 6. The part numbers STD12N65M5, STI12N65M5 and STU12N65M5 have been removed and the document has been updated accordingly. Updated title, Features and Description on cover page. 11-Mar-2022 6 Modified Rg value in the Table 4. Dynamic. Updated Section 4 Package information. Minor text changes. DS6117 - Rev 6 page 13/15 STF12N65M5, STP12N65M5 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 4.1 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.2 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 DS6117 - Rev 6 page 14/15 STF12N65M5, STP12N65M5 IMPORTANT NOTICE – READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgment. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2022 STMicroelectronics – All rights reserved DS6117 - Rev 6 page 15/15