STF12PF06

STP12PF06 STF12PF06 P-CHANNEL 60V - 0.18 Ω - 12A TO-220/TO-220FP STripFET™ II POWER MOSFET Table 1: General Features Figure 1:Package TYPE VDSS RDS(on) ID STP12PF06 STF12PF06 60 V 60 V < 0.20 Ω < 0.20 Ω 12 A 12 A ■ ■ ■ ■ ■ ) s t( TYPICAL RDS(on) = 0.18 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION c u d 3 1 2 TO-220 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility ) s ( ct e t le o r P 3 1 2 TO-220FP o s b -O Figure 2: Internal Schematic Diagram APPLICATIONS ■ MOTOR CONTROL ■ DC-DC & DC-AC CONVERTERS u d o r P e t e l o Table 2: Order Codes PART NUMBER STP12PF06 STF12PF06 s b O MARKING P12PF06 F12PF06 PACKAGE TO-220 TO-220FP PACKAGING TUBE TUBE Table 3: ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(•) Ptot dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature (•) Pulse width limited by safe operating area. NOTE:For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed. March 2005 Value STP20PF06 Unit STF20PF06 60 60 ± 20 6 200 V V V A A A W W/°C V/ns mJ -55 to 175 °C 12 8.4 48 60 0.4 8 5.6 32 225 0.17 (1) ISD ≤12A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2) Starting Tj = 25 oC, ID = 12A, VDD= 25V Rev. 2.0 1/10 STP12PF06 STF12PF06 Table 4: THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Tl Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max TO-220 TO-220FP 2.5 5.35 62.5 300 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) Table 5: OFF Symbol Parameter Test Conditions Min. Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V V(BR)DSS Table 6: ON (*) Symbol Parameter Gate Threshold Voltage VDS = VGS ID = 250 µA RDS(on) Static Drain-source On Resistance VGS = 10 V ID = 10 A ) s ( ct Symbol Parameter Forward Transconductance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance e t e ol s b O 2/10 u d o gfs (2) Pr b O - Test Conditions VDS = 15 V Unit ) s ( V t c u ID = 6 A VDS = 25V f = 1 MHz VGS = 0 1 10 µA µA d o r ±100 nA Min. Typ. Max. Unit 2 3.4 4 V 0.18 0.20 Ω Min. Typ. Max. Unit 2.5 6 S 850 230 75 pF pF pF P e et VGS(th) Table 7: DYNAMIC Max. 60 l o s Test Conditions Typ. STP12PF06 STF12PF06 ELECTRICAL CHARACTERISTICS (continued) Table 8: SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. td(on) tr Turn-on Delay Time Rise Time VDD = 30 V ID = 6 A VGS = 10 V RG = 4.7 Ω (Resistive Load, Figure 19) 20 40 Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 48 V ID= 12 A VGS= 10 V 16 4 6 21 Typ. Max. ns ns nC nC nC ) s t( Table 9: SWITCHING OFF Symbol td(off) tf Parameter Test Conditions Min. VDD = 30 V ID = 6 A VGS = 10 V RG = 4.7Ω, (Resistive Load, Figure 19) Turn-off Delay Time Fall Time Symbol Parameter ISD ISDM (1) Source-drain Current Source-drain Current (pulsed) VSD (2) Forward On Voltage trr Qrr IRRM Test Conditions ) s ( ct Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current o r P Min. Typ. so b O - ISD = 12 A c u d 40 10 e t le Table 10: SOURCE DRAIN DIODE VGS = 0 ISD = 12 A di/dt = 100A/µs Tj = 150°C VDD = 30 V (see test circuit, Figure 21) Unit Unit ns ns Max. Unit 10 40 A A 2.5 V 100 260 5.2 ns nC A du (1 )Pulse width limited by safe operating area. (2) Pulsed: Pulse duration = 300 µs, duty cycle s b O e t e ol 1.5 %. o r P Figure 3: Safe Operating Area for TO-220 Figure 4: Safe Operating Area for TO-220FP 3/10 STP12PF06 STF12PF06 Figure 5: Thermal Impedance Figure 6: Thermal Impedance for TO-220FP ) s t( c u d Figure 7: Output Characteristics o r P Figure 8: Transfer Characteristics e t le o s b O ) s ( t c u d o r P e t e l o bs Figure 9: Transconductance O 4/10 Figure 10: Static Drain-source On Resistance STP12PF06 STF12PF06 Figure 11: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations ) s t( c u d Figure 13: Normalized Gate Threshold Voltage vs Temperature o r P Figure 14: Normalized on Resistance vs Temperature e t le o s b O ) s ( t c u d o r P e t e l o bs Figure 15: Source-drain Diode Forward Characteristics O Figure 16: Normalized Breakdown Voltage Temperature 5/10 STP12PF06 STF12PF06 Figure 17: Unclamped Inductive Load Test Circuit Figure 18: Unclamped Inductive Waveform ) s t( c u d Figure 19: Switching Times Test Circuits For Re- e t le sistive Load o s b O ) s ( t c u d o r P e t e l o s b O Figure 21: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/10 o r P Figure 20: Gate Charge test Circuit STP12PF06 STF12PF06 TO-220 MECHANICAL DATA mm. DIM. MIN. TYP. inch. MAX. MIN. A 4.4 4.6 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 F2 1.14 1.70 0.044 G 4.95 5.15 0.194 G1 2.40 2.70 0.094 H2 10 10.40 0.393 L2 16.40 L3 e t le 28.90 L4 13 14 L5 2.65 2.95 L6 15.25 15.75 L7 6.20 L9 3.50 DIA 3.75 TYP. ) s t( 0.067 od uc Pr 0.067 0.203 0.106 0.409 0.645 1.137 0.511 0.551 0.104 0.116 0.600 0.620 6.60 0.244 0.260 3.93 0.137 0.154 3.85 0.147 0.151 )- s ( t c TYP. Ob so u d o r P e t e l o s b O 7/10 STP12PF06 STF12PF06 TO-220FP MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 F1 1.15 1.7 0.045 F2 1.15 1.7 0.045 G 4.95 5.2 0.195 G1 2.4 2.7 0.094 H 10 10.4 0.393 L2 L3 28.6 30.6 L4 9.8 10.6 L6 15.9 L7 9 Ø 3 Pr b O - 0.106 0.630 1.204 0.385 0.417 0.626 0.645 0.354 0.366 3.2 0.118 0.126 E D P e B 0.204 9.3 d o r A 0.067 1.126 t c u t e l o 0.067 0.409 so 16.4 (s) uc od e t le 16 ) s t( 0.039 L3 s b O L6 F2 H G G1 ¯ F F1 L7 1 2 3 L2 8/10 L4 STP12PF06 STF12PF06 Table 11:Revision History Date Revision Description of Changes March 2005 1.0 FIRST ISSUE March 2005 2.0 MINOR REVISION ) s t( c u d e t le o r P o s b O ) s ( t c u d o r P e t e l o s b O 9/10 STP12PF06 STF12PF06 ) s t( c u d e t le o r P o s b O ) s ( t c u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. 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