STF13N65M2

STF13N65M2, STFI13N65M2 N-channel 650 V, 0.37 Ω typ., 10 A MDmesh™ M2 Power MOSFETs in TO-220FP and I²PAKFP packages Datasheet - production data Features Order code STF13N65M2 STFI13N65M2 1 2 RDS(on) max ID 650 V 0.43 Ω 10A • Extremely low gate charge 3 TO-220FP VDS 1 2 I2PAKFP • Excellent output capacitance (Coss) profile 3 (TO-281) • 100% avalanche tested • Zener-protected Applications • Switching applications Figure 1. Internal schematic diagram Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. AM15572v1 Table 1. Device summary Order code Marking Package STF13N65M2 TO-220FP 13N65M2 STFI13N65M2 December 2014 Packaging I 2PAKFP DocID026893 Rev 2 Tube (TO-281) 1/15 www.st.com Contents STF13N65M2,STFI13N65M2 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 2/15 .............................................. 6 4.1 TO-220FP, STF13N65M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.2 I2PAKFP (TO-281), STFI13N65M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 DocID026893 Rev 2 STF13N65M2,STFI13N65M2 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit ± 25 V (1) A Drain current (continuous) at TC = 100 °C (1) 6.3 A IDM(2) Drain current (pulsed) 40(1) A PTOT Total dissipation at TC = 25 °C 25 W VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) 2500 V VGS ID ID Parameter Gate-source voltage Drain current (continuous) at TC = 25 °C 10 dv/dt (3) Peak diode recovery voltage slope 15 dv/dt(4) MOSFET dv/dt ruggedness 50 Tstg Tj V/ns Storage temperature - 55 to 150 °C Max. operating junction temperature 150 1. Limited by maximum junction temperature.. 2. Pulse width limited by safe operating area. 3. ISD ≤ 10 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V 4. VDS ≤ 520 V Table 3. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Value Unit 5 °C/W 62.5 °C/W Value Unit Table 4. Avalanche characteristics Symbol Parameter IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 1.8 A EAS Single pulse avalanche energy (starting Tj = 25°C, ID = IAR; VDD = 50 V) 350 mJ DocID026893 Rev 2 3/15 15 Electrical characteristics 2 STF13N65M2,STFI13N65M2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 V IDSS VDS = 650 V Zero gate voltage drain current (VGS = 0) VDS = 650 V, TC = 125 °C IGSS Gate-body leakage current (VDS = 0) Min. Typ. Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance Unit 650 V 1 µA 100 µA ±10 µA 3 4 V 0.37 0.43 Ω Min. Typ. Max. Unit - 590 - pF - 27.5 - pF - 1.1 - pF VGS = ± 25 V VGS(th) Max. 2 VGS = 10 V, ID = 5 A Table 6. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VDS = 0 to 520 V, VGS = 0 V - 168.5 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 6.5 - Ω Qg Total gate charge - 17 - nC - 3.3 - nC - 7 - nC Qgs Gate-source charge Qgd Gate-drain charge VDS = 100 V, f = 1 MHz, VGS = 0 V VDD = 520 V, ID = 10 A, VGS = 10 V, (see Figure 15) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 7. Switching times Symbol td(on) tr td(off) tf 4/15 Parameter Test conditions Turn-on delay time Rise time Turn-off delay time VDD = 325 V, ID = 5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 14 and Figure 19) Fall time DocID026893 Rev 2 Min. Typ. Max. Unit - 11 - ns - 7.8 - ns - 38 - ns - 12 - ns STF13N65M2,STFI13N65M2 Electrical characteristics Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 10 A ISDM (1) Source-drain current (pulsed) - 40 A VSD (2) Forward on voltage - 1.6 V ISD trr ISD = 10 A, VGS = 0 V Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 10 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 16) ISD = 10 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C, (see Figure 16) - 312 ns - 2.7 µC - 17.5 A - 464 ns - 4.1 µC - 17.5 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID026893 Rev 2 5/15 15 Electrical characteristics 2.1 STF13N65M2,STFI13N65M2 Electrical characteristics (curves) Figure 2. Safe operating area ,' $ Figure 3. Thermal impedance *,3*$/6 *& . į     6 RQ 2 /L SHU P DW LWH LR G QL E\ Q P WKL D[ VD 5 UH D ' LV   —V     —V PV PV  6LQJOHSXOVH   =WK . 5 WK-F į W SϨ 7M ƒ& 7F ƒ& 6LQJOHSXOVH   WS   Figure 4. Output characteristics ,' $   9'69   *,3*$/6 9*6 9  Ϩ          WSV Figure 5. Transfer characteristics ,' $  *,3*$/6  9'6 9 9         9     Figure 6. Normalized VBR(DSS) vs temperature *,3*$/6 9%5'66   9'69   5'6RQ  9*69 *,3')65 9*6 9    Figure 7. Static drain-source on-resistance ȍ QRUP   ,' P$        6/15    7-ƒ&   DocID026893 Rev 2      ,'$ STF13N65M2,STFI13N65M2 Electrical characteristics Figure 8. Gate charge vs gate-source voltage 9*6 9  *,3*$/6 9'6 9  9'6  *,3*$/6 & S)  &LVV  9'' 9 ,' $  Figure 9. Capacitance variations         &RVV          4JQ& Figure 10. Normalized gate threshold voltage vs temperature 9*6WK QRUP *,3*$/6 &UVV     9'69  Figure 11. Normalized on-resistance vs temperature *,3*$/6 5'6RQ QRUP     ,' —$           7-ƒ&  Figure 12. Source-drain diode forward characteristics 96' 9 *,3*$/6 7- ƒ&   ,' $ 9*6 9     7-ƒ& Figure 13. Output capacitance stored energy (266 —- *,3*$/6    7- ƒ&   7- ƒ&            ,6'$   DocID026893 Rev 2       9'69 7/15 15 Test circuits 3 STF13N65M2,STFI13N65M2 Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit 9'' 9 μF VDD VD VGS ,* &2167 9L 9 9*0$; RG Nȍ Q) 3.3 μF 2200 RL Nȍ  —) D.U.T. ȍ '87 Nȍ 9* PW Nȍ Nȍ 3: $0Y AM01468v1 Figure 16. Test circuit for inductive load switching and diode recovery times A A Figure 17. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B S VD L=100μH 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform 9%5'66 WRQ 9' WGRQ WRII WU WGRII   ,'0  9'' $0Y 8/15   ,' 9'' WI 9*6  DocID026893 Rev 2  9'6  $0Y STF13N65M2,STFI13N65M2 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID026893 Rev 2 9/15 15 Package mechanical data 4.1 STF13N65M2,STFI13N65M2 TO-220FP, STF13N65M2 Figure 20. TO-220FP drawing 7012510_Rev_K_B 10/15 DocID026893 Rev 2 STF13N65M2,STFI13N65M2 Package mechanical data Table 9. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Ø 3 3.2 DocID026893 Rev 2 11/15 15 Package mechanical data 4.2 STF13N65M2,STFI13N65M2 I2PAKFP (TO-281), STFI13N65M2 Figure 21. I2PAKFP (TO-281) drawing UHY& 12/15 DocID026893 Rev 2 STF13N65M2,STFI13N65M2 Package mechanical data Table 10. I2PAKFP (TO-281) mechanical data mm Dim. Min. Typ. Max. A 4.40 - 4.60 B 2.50 2.70 D 2.50 2.75 D1 0.65 0.85 E 0.45 0.70 F 0.75 1.00 F1 1.20 G 4.95 5.20 H 10.00 10.40 L1 21.00 23.00 L2 13.20 14.10 L3 10.55 10.85 L4 2.70 3.20 L5 0.85 1.25 L6 7.50 7.60 DocID026893 Rev 2 7.70 13/15 15 Revision history 5 STF13N65M2,STFI13N65M2 Revision history Table 11. Document revision history Date Revision 15-Oct-2014 1 Initial release 2 Text edits throughout document Updated Section 1: Electrical ratings Updated Section 2: Electrical characteristics Added Section 2.1: Electrical characteristics (curves) Updated Section 4.2: I2PAKFP (TO-281), STFI13N65M2 18-Dec-2014 14/15 Changes DocID026893 Rev 2 STF13N65M2,STFI13N65M2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2014 STMicroelectronics – All rights reserved DocID026893 Rev 2 15/15 15