STF13NM50N

STF13NM50N

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOT78

  • 描述:

    MOSFET N-CH 500V 12A TO-220FP

  • 数据手册
  • 价格&库存
STF13NM50N 数据手册
STB13NM50N/-1 - STF13NM50N STP13NM50N - STW13NM50N N-channel 500 V - 0.250 Ω - 12 A MDmesh™ II Power MOSFET TO-220 - TO-247 - TO-220FP - I2PAK - D2PAK Features Type VDSS (@Tjmax) RDS(on) max ID STB13NM50N 550 V 0.32 Ω 12 A STB13NM50N-1 550 V 0.32 Ω 12 A STF13NM50N 550 V 0.32 Ω 12 A(1) STP13NM50N 550 V 0.32 Ω 12 A STW13NM50N 550 V 0.32 Ω 12 A 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance ) s ( ct Switching applications u d o 2 r P e 3 1 TO-247 3 2 1 o s b -O 3 1 let Figure 1. ■ I²PAK TO-220FP ■ 3 12 2 TO-220 1. Limited only by maximum temperature allowed Application ) s ( ct 3 1 D²PAK Internal schematic diagram u d o Description r P e This product is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. t e l o s b O Table 1. Device summary Order codes Marking Package Packaging STB13NM50N B13NM50N D²PAK Tape and reel STB13NM50N-1 B13NM50N I²PAK Tube STF13NM50N F13NM50N TO-220FP Tube STP13NM50N P13NM50N TO-220 Tube STW13NM50N W13NM50N TO-247 Tube March 2008 Rev 3 1/18 www.st.com 18 Contents STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit ............................................... 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 2/18 s b O STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220/TO-247 D²PAK/I²PAK TO-220FP VDS Drain-source voltage (VGS=0) 500 V VGS Gate-source voltage ± 25 V ) s ( ct ID Drain current (continuous) at TC = 25 °C 12 12 (1) A ID Drain current (continuous) at TC = 100 °C 6 6 (1) A IDM (2) Drain current (pulsed) 48 PTOT Total dissipation at TC = 25 °C 100 dv/dt (3) t e l o VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Tstg Storage temperature Tj )- ro P e Peak diode recovery voltage slope du A 25 W 15 -- s b O 48 (1) V/ns 2500 V -55 to 150 °C 150 °C Max. operating junction temperature s ( t c 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤12 A, di/dt ≤400 A/µs, VDD = 80% V(BR)DSS Table 3. u d o Thermal data r P e Symbol s b O t e l o Value Parameter Rthj-case Thermal resistance junctioncase max Rthj-amb Thermal resistance junctionamb max Rthj-pcb Thermal resistance junctionpcb max Tl Table 4. Unit TO-220 I²PAK D²PAK TO-247 TO-220FP 1.25 62.5 -- Maximum lead temperature for soldering purposes -- 5 °C/W -- 50 62.5 °C/W 30 -- -- °C/W 300 °C Avalanche characteristics Symbol Parameter Max value Unit IAS Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) 3.5 A EAS Single pulse avalanche energy (starting Tj=25 °C, ID=IAS, VDD= 50 V) 200 mJ 3/18 Electrical characteristics 2 STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N Electrical characteristics (TCASE= 25 °C unless otherwise specified) Table 5. On/off states Symbol V(BR)DSS dv/dt(1) Parameter Drain-source breakdown voltage Drain-source voltage slope VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 6 A VDS = Max rating,Tc=125°C t c u Ciss Input capacitance Output capacitance Reverse transfer capacitance ) s ( ct 1 100 µA µA 100 nA 3 4 V 0.25 0.32 Ω Test conditions VDS =15 V, ID= 6 A Min. Typ. Max. Unit 8 S VDS =50 V, f=1 MHz, VGS=0 960 50 5 pF pF pF Equivalent output capacitance VGS=0, VDS =0 to 480 V 110 pF Rg Gate input resistance f=1 MHz Gate DC Bias=0 test signal level=20 mV open drain 5 Ω Qg Total gate charge Gate-source charge Gate-drain charge 30 5 15 nC nC nC od r P e Coss t e l o 2 V/ns s b O Parameter Forward transconductance Unit V u d o r P e t e l o Characteristics value at turn off on inductive load gfs(1) Max. VDS = Max rating, VGS = ±20 V ) (s Typ. 30 VGS=10 V Gate body leakage current (VDS = 0) Symbol Crss Coss eq.(2) Qgs Qgd 1. VDD=400 V, ID=12 A, IGSS Dynamic Min. 500 Zero gate voltage drain current (VGS = 0) Table 6. O ID = 1 mA, VGS= 0 IDSS 1. bs Test conditions VDD=400 V, ID = 12 A VGS =10 V (see Figure 19) Pulsed: pulse duration = 300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/18 STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N Table 7. Switching times Symbol td(on) tr td(off) tf Parameter Turn-on delay time Rise time Turn-off delay time Fall time Table 8. ISDM (1) VSD(2) trr Qrr IRRM trr Qrr IRRM Min. Typ. Max. Unit 30 15 40 10 VDD=250 V, ID=6 A, RG=4.7 Ω, VGS=10 V (see Figure 18) Parameter Test conditions Min Source-drain current Source-drain current (pulsed) Forward on voltage ISD=12 A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD=12 A, VDD=100 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD=12 A,VDD=100 V ) (s 1. Pulse width limited by safe operating area 2. Test conditions ns ns ns ns Source drain diode Symbol ISD Electrical characteristics di/dt = 100 A/µs (see Figure 20) s b O di/dt=100 A/µs,Tj=125 °C (see Figure 20) Max Unit 12 48 A A 1.3 V ) s ( ct u d o r P e t e l o Typ. 300 3 22 ns µC A 370 4 22 ns µC A Pulsed: pulse duration = 300µs, duty cycle 1.5% t c u d o r P e t e l o s b O 5/18 Electrical characteristics STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 / D²PAK / I²PAK Figure 3. Thermal impedance for TO-220 / D²PAK / I²PAK ) s ( ct Figure 4. Safe operating area for TO-220FP Figure 5. u d o r P e Thermal impedance for TO-220FP t e l o ) (s s b O t c u d o r o s b O 6/18 P e let Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N Figure 8. Output characteristics Figure 9. Electrical characteristics Transfer characteristics ) s ( ct u d o Figure 10. Transconductance Figure 11. Static drain-source on resistance r P e t e l o ) (s s b O t c u d o r P e Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations t e l o s b O 7/18 Electrical characteristics STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N Figure 14. Normalized gate threshold voltage vs temperature Figure 16. Source-drain diode forward characteristics Figure 15. Normalized on resistance vs temperature ) s ( ct u d o Figure 17. Normalized BVdss vs temperature r P e t e l o ) (s t c u d o r P e t e l o s b O 8/18 s b O STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N 3 Test circuit Test circuit Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit ) s ( ct u d o r P e Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit t e l o ) (s s b O t c u d o r P e t e l o Figure 22. Unclamped inductive waveform s b O Figure 23. Switching time waveform 9/18 Package mechanical data 4 STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 10/18 s b O STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 1.27 0.181 0.034 0.066 0.027 0.62 ) s ( ct 0.050 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 t e l o bs 3.75 2.65 r P e 3.85 2.95 u d o 0.147 0.104 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 O ) s ( t c u d o r P e t e l o s b O 11/18 Package mechanical data STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N TO-220FP mechanical data mm. Dim. Min. A 4.40 inch Typ Max. Min. 4.60 0.173 Typ. 0.181 Max. B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.70 0.017 0.027 F 0.75 1.00 0.030 0.039 F1 1.15 1.50 0.045 0.067 F2 1.15 1.50 0.045 G 4.95 5.20 0.195 G1 2.40 2.70 0.094 H 10 10.40 0.393 L2 16 L3 28.6 30.6 1.126 L4 9.80 10.60 0.385 L5 2.9 3.6 L6 15.90 16.40 L7 9 9.30 Dia 3 3.2 ) (s 0.626 b O 0.409 o r P 1.204 0.417 0.141 0.645 0.354 0.366 0.118 0.126 E t c u A e t e l 0.114 0.106 du 0.630 so ) s ( ct 0.067 0.204 B D d o r P e t e l o G G1 F F1 Dia F2 O L7 H bs L3 L6 L2 L5 1 2 3 L4 7012510-I 12/18 STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N Package mechanical data TO-247 Mechanical data mm. Dim. A Min. 4.85 Typ A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 E 15.45 ) s ( ct 5.45 14.20 L1 3.70 e t e ol L2 øP 3.55 øR 4.50 du 20.15 e L Max. 5.15 S O ) bs o r P 15.75 14.80 4.30 18.50 3.65 5.50 5.50 s ( t c u d o r P e t e l o s b O 13/18 Package mechanical data STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N I²PAK (TO-262) mechanical data mm inch Dim Min A A1 b b1 c c2 D e e1 E L L1 L2 ) (s t c u d o r P e t e l o s b O 14/18 Typ 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 Max Min 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 Max 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 ) s ( ct u d o r P e t e l o s b O Typ STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N Package mechanical data D²PAK (TO-263) mechanical data mm inch Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 Typ 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 Max Min 4.60 0.23 0.93 1.70 0.60 1.36 9.35 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 10.40 Typ ) s ( ct 5.28 15.85 2.69 2.79 1.40 1.75 0.4 0° ) (s P e t e l o s b O 8° 0.192 0.590 0.099 0.090 0.05 0.051 du ro 2.54 4.88 15 2.49 2.29 1.27 1.30 Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 0.208 0.624 0.106 0.110 0.055 0.069 0.016 0° 8° t c u d o r P e t e l o s b O 0079457_M 15/18 Packaging mechanical data 5 STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N Packaging mechanical data D2PAK FOOTPRINT ) s ( ct u d o r P e TAPE AND REEL SHIPMENT REEL MECHANICAL DATA t e l o DIM. )- s ( t c u d o TAPE MECHANICAL DATA DIM. MIN. MAX. MIN. 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 MAX. R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 16/18 inch A0 e t e ol s b O Pr mm 0.933 0.956 s b O mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T MAX. inch MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N 6 Revision history Revision history Table 9. Document revision history Date Revision Changes 18-Dec-2006 1 First release 08-May-2007 2 Added TO-247 04-Mar-2008 3 – Table 3: Thermal data has been updated; – Figure 13: Capacitance variations changed. ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 17/18 STB13NM50N/-1 - STF13NM50N - STP13NM50N - STW13NM50N ) s ( ct Please Read Carefully: u d o Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. r P e All ST products are sold pursuant to ST’s terms and conditions of sale. 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STF13NM50N 价格&库存

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