STF15N65M5

STF15N65M5, STFI15N65M5, STP15N65M5 N-channel 650 V, 0.308 Ω typ., 11 A MDmesh™ V Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages Datasheet — production data Features Order codes VDS @ TJmax RDS(on) max ID 3 STF15N65M5 STFI15N65M5 1 710 V < 0.34 Ω 2 TO-220FP 11 A TAB STP15N65M5 ■ Worldwide best RDS(on) * area ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching performance ■ 100% avalanche tested 1 I 3 2 Figure 1. 2 TO-220 Internal schematic diagram Applications ■ 1 3 2PAKFP $4!" Switching applications Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. ' 3 !-V Device summary Order codes Marking STF15N65M5 STFI15N65M5 Package TO-220FP 15N65M5 I2PAKFP STP15N65M5 November 2012 This is information on a product in full production. Packaging Tube TO-220 Doc ID 022863 Rev 2 1/17 www.st.com 17 Contents STF15N65M5, STFI15N65M5, STP15N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 .............................................. 9 Doc ID 022863 Rev 2 STF15N65M5, STFI15N65M5, STP15N65M5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter TO-220FP TO-220 VGS ID PTOT dv/dt (2) A 6.9 (1) 6.9 A Drain current (pulsed) 44 44(1) A Total dissipation at TC = 25 °C 85 25 W 11 11 Peak diode recovery voltage slope VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature Tj V (1) Drain current (continuous) at TC = 100 °C (1) I2PAKFP ± 25 Drain current (continuous) at TC = 25 °C ID IDM Gate-source voltage Unit 15 V/ns 2500 V - 55 to 150 °C 150 °C Max. operating junction temperature 1. Limited by maximum junction temperature. 2. ISD ≤ 11 A, di/dt ≤400 A/µs; VDD = 400 V, VDS(peak) < V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit TO-220FP TO-220 I2PAKFP Rthj-case Thermal resistance junction-case max Rthj-amb Table 4. Symbol Thermal resistance junction-ambient max 5 1.47 °C/W 62.5 °C/W Value Unit Avalanche characteristics Parameter IAR Avalanche current, repetetive or not repetetive (pulse width limited by Tjmax ) 2.5 A EAS Single pulse avalanche energy (starting tj= 25°C, ID= IAR; VDD=50 V) 160 mJ Doc ID 022863 Rev 2 3/17 Electrical characteristics 2 STF15N65M5, STFI15N65M5, STP15N65M5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 IDSS Zero gate voltage VDS = 650 V drain current (VGS = 0) VDS = 650 V, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source onVGS = 10 V, ID = 5.5 A resistance Symbol Ciss Coss Crss Co(tr)(1) Co(er) (2) Typ. Max. Unit 650 V 1 100 µA µA ± 100 nA 4 5 V 0.308 0.34 Ω Min. Typ. Max. Unit - 816 23 2.6 - pF pF pF - 70 - pF - 21 - pF - 5 - Ω - 22 5.5 11 - nC nC nC VGS = ± 25 V VGS(th) Table 6. Min. 3 Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS = 100 V, f = 1 MHz, VGS = 0 Equivalent capacitance time related VDS = 0 to 520 V, VGS = 0 Equivalent capacitance energy related RG Intrinsic gate resistance f = 1 MHz open drain Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 520 V, ID = 5.5 A, VGS = 10 V (see Figure 18) 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/17 Doc ID 022863 Rev 2 STF15N65M5, STFI15N65M5, STP15N65M5 Table 7. Symbol td(V) tr (V) tf (i) tc(off) Table 8. Switching times Parameter Test conditions Voltage delay time Voltage rise time Current fall time Crossing time VDD = 400 V, ID = 7 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19 and Figure 22) Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage IRRM trr Qrr IRRM Min. Typ. - 30 8 11 12.5 Min. Typ. Max. Unit - ns ns ns ns Source drain diode Symbol trr Qrr Electrical characteristics Test conditions Max. Unit - 11 44 A A ISD = 11 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 11 A, di/dt = 100 A/µs VDD = 100 V (see Figure 22) - 247 2.4 19.5 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 11 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 22) - 312 3 19 ns µC A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 022863 Rev 2 5/17 Electrical characteristics STF15N65M5, STFI15N65M5, STP15N65M5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220FP and I2PAKFP Figure 3. Thermal impedance for TO-220FP and I2PAKFP Figure 5. Thermal impedance for TO-220 Figure 7. Transfer characteristics AM15286v1 n) D S( o 10 O p Li era m ite tion d by in t m his ax a R rea is ID (A) 1 10µs 100µs 1ms Tj=150°C Tc=25°C 0.1 10ms Single pulse 0.01 0.1 10 1 Figure 4. 100 VDS(V) Safe operating area for TO-220 AM15285v1 ID (A) is ea ) ar S(on D th R in ax n it o y m b ra pe ed O imit L 10 10µs 100µs is 1 1ms 10ms Tj=150°C Tc=25°C 0.1 Single pulse 0.01 0.1 Figure 6. 10 1 100 VDS(V) Output characteristics AM15287v1 ID (A) AM152887v1 ID (A) VDS= 25 V VGS= 9, 10 V 20 20 VGS= 8 V 15 15 VGS= 7 V 10 10 5 5 VGS= 6 V 0 0 6/17 5 10 15 20 25 VDS(V) 0 3 Doc ID 022863 Rev 2 4 5 6 7 8 9 VGS(V) STF15N65M5, STFI15N65M5, STP15N65M5 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM15289v1 VGS (V) VDS (V) 500 VDD=520V 12 ID=5.5A VDS 10 Static drain-source on-resistance AM15293v1 RDS(on) (Ω) 0.35 400 0.33 300 0.31 200 0.29 100 0.27 VGS=10V 8 6 4 2 0 0 10 5 15 0 25 Qg(nC) 20 Figure 10. Capacitance variations 4 2 6 8 10 ID(A) Figure 11. Output capacitance stored energy AM15290v1 C (pF) 0.25 0 AM15291v1 Eoss (µJ) 4 3.5 1000 Ciss 3 2.5 100 2 Coss 1.5 10 1 Crss 0.5 1 0.1 1 10 100 Figure 12. Normalized gate threshold voltage vs temperature AM05459v2 VGS(th) (norm) 1.10 0 0 VDS(V) ID = 250 µA VDS = VGS 100 200 300 400 500 600 VDS(V) Figure 13. Normalized on-resistance vs temperature RDS(on) (norm) 2.1 AM05460v2 VGS= 10 V ID= 5.5 A 1.9 1.00 1.7 1.5 1.3 0.90 1.1 0.9 0.80 0.7 0.70 -50 -25 0 25 50 75 100 TJ(°C) 0.5 -50 -25 Doc ID 022863 Rev 2 0 25 50 75 100 TJ(°C) 7/17 Electrical characteristics STF15N65M5, STFI15N65M5, STP15N65M5 Figure 14. Source-drain diode forward characteristics Figure 15. Normalized BVDSS vs temperature AM05461v1 VSD (V) AM10399v1 VDS (norm) TJ=-50°C 1.08 1.2 ID = 1mA 1.06 1.0 1.04 0.8 1.02 TJ=25°C 1.00 0.6 TJ=150°C 0.98 0.4 0.96 0.2 0 0.94 0 10 20 30 50 ISD(A) 40 0.92 -50 -25 Figure 16. Switching losses vs gate resistance (1) AM15292v1 E (μJ) 120 Eon VDD=400V VGS=10V ID=7A 100 80 60 Eoff 40 20 0 0 10 20 30 40 50 RG(Ω) 1. Eon including reverse recovery of a SiC diode 8/17 Doc ID 022863 Rev 2 0 25 50 75 100 TJ(°C) STF15N65M5, STFI15N65M5, STP15N65M5 3 Test circuits Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit 6$$ 6 K K N&  &  2, & 6'3 )'#/.34 6$$  6I66'-!8 6$ 2'  & $54 $54 6' K 07 K K 07 !-V !-V Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test switching and diode recovery times circuit ! ! $54 &!34 $)/$% " " , ! $ ' 3 6$ , (  & "   & $ 6$$  &  & 6$$ )$ ' 2' 3 6I $54 0W !-V Figure 21. Unclamped inductive waveform !-V Figure 22. Switching time waveform Inductive Load Turn - off 6"2 $33 Id 6$ 90%Vds 90%Id td(v) )$Vgs 90%Vgs on )$ )) Vgs(I(t)) 6$$ 6$$ 10%Id 10%Vds Vds tr(v) !-V Doc ID 022863 Rev 2 tf(i) tc(off) AM05540v1 9/17 Package mechanical data 4 STF15N65M5, STFI15N65M5, STP15N65M5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/17 Doc ID 022863 Rev 2 STF15N65M5, STFI15N65M5, STP15N65M5 Table 9. Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Doc ID 022863 Rev 2 11/17 Package mechanical data STF15N65M5, STFI15N65M5, STP15N65M5 Figure 23. TO-220FP drawing 7012510_Rev_K_B 12/17 Doc ID 022863 Rev 2 STF15N65M5, STFI15N65M5, STP15N65M5 Table 10. Package mechanical data I2PAKFP (TO-281) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 B 2.50 2.70 D 2.50 2.75 D1 0.65 0.85 E 0.45 0.70 F 0.75 1.00 F1 1.20 G 4.95 H 10.00 10.40 L1 21.00 23.00 L2 13.20 14.10 L3 10.55 10.85 L4 2.70 3.20 L5 0.85 1.25 L6 7.30 7.50 - 5.20 Figure 24. I2PAKFP (TO-281) drawing REV! Doc ID 022863 Rev 2 13/17 Package mechanical data Table 11. STF15N65M5, STFI15N65M5, STP15N65M5 TO-220 type A mechanical data mm Dim. Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 14/17 Typ. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 022863 Rev 2 STF15N65M5, STFI15N65M5, STP15N65M5 Package mechanical data Figure 25. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 022863 Rev 2 15/17 Revision history 5 STF15N65M5, STFI15N65M5, STP15N65M5 Revision history Table 12. Document revision history Date Revision 05-Mar-2012 1 First release. 2 – The part number STB15N65M5 has been moved to a separate datasheet. – Added Section 2.1: Electrical characteristics (curves). – Minor text changes. 09-Nov-2012 16/17 Changes Doc ID 022863 Rev 2 STF15N65M5, STFI15N65M5, STP15N65M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2012 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 022863 Rev 2 17/17