STF15NM65N,STFI15NM65N
N-channel 650 V, 0.35 Ω typ., 12 A MDmesh™ II Power MOSFETs
in TO-220FP and I²PAKFP packages
Datasheet - production data
Features
Order code
1
2
VDSS @Tjmax RDS(on) max.
STF15NM65N
3
710 V
1
TO-220FP
ID
0.38 Ω
12 A
STFI15NM65N
2
3
• 100% avalanche tested
2
I PAKFP
(TO-281)
• Low input capacitance and gate charge
• Low gate input resistance
Applications
• Switching applications
Figure 1. Internal schematic diagram
Description
'
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFETs associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
*
6
$0Y
Table 1. Device summary
Order code
Marking
Packages
STF15NM65N
TO-220FP
15NM65N
STFI15NM65N
July 2016
This is information on a product in full production.
Packing
I2PAKFP (TO-281)
DocID13853 Rev 4
Tube
1/15
www.st.com
Contents
STF15NM65N, STFI15NM65N
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
4
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
2/15
............................................... 8
4.1
TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.2
I2PAKFP (TO-281) package information . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
DocID13853 Rev 4
STF15NM65N, STFI15NM65N
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
I2PAKFP
TO-220FP
Unit
VDS
Drain source voltage
650
V
VGS
Gate source voltage
± 25
V
ID
Drain current continuous Tc = 25 °C
12(1)
A
ID
Drain current continuous Tc = 100 °C
7.56
A
IDM(2)
Drain current pulsed
48
A
PTOT
Total dissipation at Tc = 25 °C
30
W
dv/dt(3)
Peak diode recovery voltage slope
15
V/ns
VISO
Insulation withstand voltage (RMS
from all three leads to external
heatsink
(t = 1 s; TC = 25 °C)
2500
V
-55 to 150
°C
TJ
Operating junction temperature range
Tstg
Storage temperature range
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD ≤12 A, di/dt ≤ 400 A/μs, VDSpeak ≤ V(BR)DSS, VDD = 80 % V(BR)DSS
Table 3. Thermal data
Value
Symbol
Parameters
I2PAKFP
TO-220FP
Rthjc
Rthj-amb
Unit
Thermal resistance junction-case
4.17
°C/W
Thermal resistance junction-ambient
62.5
°C/W
Value
Unit
3
A
187
mJ
Table 4. Avalanche characteristics
Symbol
Parameters
IAS
Avalanche current, repetitive or notrepetitive (pulse width limited by Tjmax)
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
DocID13853 Rev 4
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15
Electrical characteristics
2
STF15NM65N, STFI15NM65N
Electrical characteristics
(TCASE = 25 °C unless otherwise specified).
Table 5. On/off states
Symbol
V(BR)DSS
Parameter
Test conditions
Drain-source breakdown voltage VGS = 0, ID = 1 mA
Min.
Typ.
Max.
650
Unit
V
VDD = 650 V, VGS=0
1
µA
VDD = 650 V, VGS = 0
TC = 125 °C(1)
100
µA
Gate body leakage
VGS= ±25 V, VDS = 0 V
±100
nA
VGS(th)
Gate threshold voltage
ID= 250 µA, VGS =VDS
3
4
V
RDS(on)
Static drain-source onresistance
ID= 6 A, VGS= 10V
0.35
0.38
Ω
lDSS
Zero gate voltage drain current
lGSS
2
1. Defined by design, not subject to production test
Table 6. Dynamic
Symbol
Ciss
Parameter
Test conditions
Min. Typ. Ma.
Input capacitance
VDS= 50 V, f = 1MHz,
VGS= 0 V
Coss
Output capacitance
Crss
Reverse capacitance
Unit
-
983
-
pF
-
57
-
pF
-
4.5
-
pF
Equivalent output.
capacitance
VDS = 0 V to 520 V, VGS = 0 V
-
146
-
pF
Rg
Intrinsic gate resistance
f = 1MHz ID = 0 A
-
4.6
-
Ω
Qg
Total gate charge
-
33.3
-
nC
Qgs
Gate source charge
-
5.7
-
nC
Qgd
Gate-drain charge
-
17
-
nC
Cosseq (1)
VDD= 520 V, ID=12 A,
VGS= 10 V (see Figure 13:
Gate charge test circuit)
1. Cross eq: defined as a constant equivalent capacitance giving the same charging time as COSS when V DS
increases from 0 to 80 % VDSS.
Table 7. Switching times
Symbol
td(on)
tr
td(off)
tf
4/15
Parameter
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD= 325 V, ID = 6 A
Rg= 4.7 Ω, VGS = 10 V(see
Figure 12: Switching times
test circuit for resistive
load and Figure 17:
Switching time waveform)
DocID13853 Rev 4
Min. Typ. Max.
Unit
-
55.5
-
ns
-
8.5
-
ns
-
14
-
ns
-
11.4
-
ns
STF15NM65N, STFI15NM65N
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source drain current
-
12
A
ISDM(1)
Source drain current
(pulsed)
-
48
A
VSD(2)
Forward on voltage
-
1.6
V
trr
Reverse recovery time
Qrr
Reverse recovery
charge
IRRM
Reverse recovery
current
trr
Reverse recovery time
Qrr
Reverse recovery
charge
IRRM
Reverse recovery
current
ISD = 12 A, VGS = 0 V
ISD = 12 A, di/dt = 100 A/µs
VDD = 60 V(see Figure 14:
Test circuit for inductive
load switching and diode
recovery times)
ISD= 12 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 14: Test circuit
for inductive load switching
and diode recovery times)
-
428
ns
-
4.7
µC
-
21.5
A
-
570
ns
-
6.2
µC
-
22
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
DocID13853 Rev 4
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15
Electrical characteristics
2.1
STF15NM65N, STFI15NM65N
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
AM10307v1
ID
(A)
is
ea )
ar S(on
D
t
R
x
in
n ma
io
at by
r
pe ed
O mit
Li
10
s
hi
1
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single pulse
0.1
0.01
0.1
10
1
VDS(V)
100
Figure 4. Output characteristics
Figure 5. Transfer characteristics
AM10308v1
ID
(A)
AM10309v1
ID
(A)
VGS=10V
25
VDS=19V
25
6V
20
20
15
15
10
10
5V
5
0
0
5
0
0
4 6 8 10 12 14 16 18 20 22 VDS(V)
2
Figure 6. Static drain-source on-resistance
AM10311v1
RDS(on)
(Ω)
0.365
0.360
4
6
8
10
9*6
9
*,3'49* 9'6
9'6
9
9'' 9
,' $
0.355
0.350
0.345
0.340
0.335
0.330
0
6/15
VGS(V)
Figure 7. Gate charge vs gate-source voltage
VGS=10V
2
2
4
6
8
10
12 ID(A)
DocID13853 Rev 4
4JQ&
STF15NM65N, STFI15NM65N
Electrical characteristics
Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage vs
temperature
AM10313v1
C
(pF)
AM10314v1
VGS(th)
(norm)
1000
1.10
Ciss
ID=250µA
1.00
100
Coss
0.90
Crss
0.80
10
1
0.1
1
10
100
VDS(V)
0.70
-50 -25
25
0
50
75 100
TJ(°C)
Figure 10. Normalized on-resistance vs temp. Source-drain diode forward characteristics
AM10315v1
RDS(on)
2.1
1.9
AM10316v1
VSD
(V)
1.4
(norm)
TJ=-50°C
ID=6A
1.2
TJ=25°C
1.7
1.0
1.5
0.8
TJ=150°C
1.3
0.6
1.1
0.9
0.4
0.7
0.2
0.5
-50 -25
0
0
25
50
75 100
0
TJ(°C)
2
4
6
8
10
12
ISD(A)
Figure 11. Normalized VDS vs temperature
AM09028v1
VDS
(norm)
ID=1mA
1.10
1.08
1.06
1.04
1.02
1.00
0.98
0.96
0.94
0.92
-50 -25
0
25
50
75 100
DocID13853 Rev 4
TJ(°C)
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15
Test circuits
3
STF15NM65N, STFI15NM65N
Test circuits
Figure 12. Switching times test circuit for
resistive load
Figure 13. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
IG=CONST
VDD
VGS
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
Figure 14. Test circuit for inductive load
switching and diode recovery times
A
A
AM01469v1
Figure 15. Unclamped inductive load test circuit
L
A
D
G
D.U.T.
FAST
DIODE
B
B
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 16. Unclamped inductive waveform
Figure 17. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
8/15
0
DocID13853 Rev 4
10%
AM01473v1
STF15NM65N, STFI15NM65N
4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
DocID13853 Rev 4
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15
Package information
4.1
STF15NM65N, STFI15NM65N
TO-220FP package information
Figure 18. TO-220FP package outline
7012510_Rev_K_B
10/15
DocID13853 Rev 4
STF15NM65N, STFI15NM65N
Package information
Table 9. TO-220FP package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
DocID13853 Rev 4
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15
Package information
4.2
STF15NM65N, STFI15NM65N
I2PAKFP (TO-281) package information
Figure 19. I2PAKFP (TO-281) package outline
5HY&
12/15
DocID13853 Rev 4
STF15NM65N, STFI15NM65N
Package information
Table 10. I2PAKFP (TO-281) package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
B
2.50
2.70
D
2.50
2.75
D1
0.65
0.85
E
0.45
0.70
F
0.75
1.00
F1
1.20
G
4.95
5.20
H
10.00
10.40
L1
21.00
23.00
L2
13.20
14.10
L3
10.55
10.85
L4
2.70
3.20
L5
0.85
1.25
L6
7.50
7.60
DocID13853 Rev 4
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15
Revision history
5
STF15NM65N, STFI15NM65N
Revision history
Table 11. Document revision history
Date
Revision
Changes
11-May-2011
1
Initial release.
21-Jun-2011
2
Document status promoted form preliminary data to datasheet,
added Section 2.1: Electrical characteristics (curves).
17-Jul-2013
3
–
–
–
–
25-Jul-2016
4
Added: I2PAKFP package
Added: Table 10 and Figure 22
Updated: Section 4: Package information
Minor text changes.
The part number STP15NM65N has been moved to a separate
datasheet.
Minor text changes.
14/15
DocID13853 Rev 4
STF15NM65N, STFI15NM65N
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