STF16N50M2

STD16N50M2, STF16N50M2, STP16N50M2 Datasheet N-channel 500 V, 0.24 Ω typ., 13 A MDmesh™ M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packages Features TAB 3 1 2 Order code DPAK TAB VDS at TJ max. RDS(on) max. ID STD16N50M2 STF16N50M2 TO-220 1 2 3 TO-220FP 1 2 Packages DPAK 550 V 0.28 Ω 13 A TO-220FP 3 D(2, TAB) G(1) STP16N50M2 • • Extremely low gate charge Excellent output capacitance (COSS) profile • • 100% avalanche tested Zener-protected TO-220 Applications S(3) • Switching applications AM01475V1 Description These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status link STD16N50M2 STF16N50M2 STP16N50M2 DS10450 - Rev 6 - December 2018 For further information contact your local STMicroelectronics sales office. www.st.com STD16N50M2, STF16N50M2, STP16N50M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VGS Value Parameter DPAK TO-220 Unit TO-220FP Gate-source voltage ±25 V ID Drain current (continuous) at TC = 25 °C 13 A ID Drain current (continuous) at TC= 100 °C 8 A Drain current (pulsed) 52 A IDM (1) PTOT Total power dissipation at TC = 25 °C 110 25 W dv/dt (2) Peak diode recovery voltage slope 15 V/ns dv/dt (3) MOSFET dv/dt ruggedness 50 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, TC = 25 °C) Tstg Storage temperature range Tj 2500 V -55 to 150 Operating junction temperature range °C 1. Pulse width is limited by safe operating area. 2. ISD ≤ 13 A, di/dt ≤ 400 A/µs, VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS 3. VDS ≤ 400 V Table 2. Thermal data Symbol Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Rthj-pcb (1) Value Parameter DPAK TO-220 Unit TO-220FP 1.14 5 62.5 Thermal resistance junction-pcb °C/W 50 1. When mounted on 1 inch² FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol DS10450 - Rev 6 Parameter IAR Avalanche current, repetitive or non-repetitive (pulse width limited by Tjmax) EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Value Unit 4 A 215 mJ page 2/24 STD16N50M2, STF16N50M2, STP16N50M2 Electrical characteristics 2 Electrical characteristics (TC = 25 °C unless otherwise specified). Table 4. On /off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. Max. 500 Unit V VGS = 0 V, VDS = 500 V 1 µA VGS = 0 V, VDS = 500 V, TC = 125 °C 100 µA ±10 µA 3 4 V 0.24 0.28 Ω IDSS Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS(1) = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source onresistance VGS = 10 V, ID = 6.5 A 2 1. Defined by design, not subject to production test Table 5. Dynamic Symbol Ciss Parameter Test conditions Min. Typ. Max. Unit - 710 - pF - 44 - pF Input capacitance VDS= 100 V, f = 1 MHz, VGS = 0 V Coss Output capacitance Crss Reverse transfer capacitance - 1.35 - pF Equivalent output capacitance VDS = 0 V to 400 V, VGS = 0 V - 192 - pF Coss eq. (1) RG Intrinsic gate resistance f = 1 MHz, ID= 0 A - 5.2 - Ω Qg Total gate charge - 19.5 - nC Qgs Gate-source charge - 4 - nC Qgd Gate-drain charge VDD = 400 V, ID = 13 A, VGS = 0 to 10 V (see Figure 18. Test circuit for gate charge behavior) - 8 - nC 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol td(on) tr td(off) tf DS10450 - Rev 6 Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions Min. Typ. Max. Unit VDD = 250 V, ID = 6.5 A RG = 4.7 Ω, VGS = 10 V (see Figure 17. Test circuit for resistive load switching times and Figure 22. Switching time waveform) - 9.6 - ns - 7.6 - ns - 32 - ns - 10 - ns page 3/24 STD16N50M2, STF16N50M2, STP16N50M2 Electrical characteristics Table 7. Source-drain diode Symbol ISD ISDM (1) (2) Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 13 A Source-drain current (pulsed) - 52 A 1.6 V Forward on voltage VGS = 0 V, ISD = 13 A - trr Reverse recovery time - 280 ns Qrr Reverse recovery charge - 2.85 µC IRRM Reverse recovery current ISD = 13 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 19. Test circuit for inductive load switching and diode recovery times ) - 20.5 A - 388 ns - 4.5 µC - 21 A VSD trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 13 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 19. Test circuit for inductive load switching and diode recovery times ) 1. Pulse width is limited by safe operating area. 2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%. DS10450 - Rev 6 page 4/24 STD16N50M2, STF16N50M2, STP16N50M2 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for DPAK GIPG230620141307LM ID (A) Figure 2. Thermal impedance for DPAK GC20460 K n) (o DS Op Lim era ite tion d by in th m is ax ar R e 10 a is 10 µs 100 µs 100 1 ms 1 10-1 10 ms 0.1 0.1 Tj=150°C Tc=25°C Single pulse 1 10 100 VDS(V) Figure 3. Safe operating area for TO-220FP GIPG230620141448LM 10 1 O p lim era ite tio d n by in m this ax a R re D a S( is on ) ID (A) 10 µs 10-2 10-5 10-4 10-3 10-2 10-1 tp (s) Figure 4. Thermal impedance for TO-220FP K GC20940 10 -1 100 µs 1 ms 10 ms 0.1 0.01 0.1 DS10450 - Rev 6 10 -2 TJ=150 °C Tc=25 °C Single pulse 1 10 100 VDS(V) 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 t p (s) page 5/24 STD16N50M2, STF16N50M2, STP16N50M2 Electrical characteristics (curves) Figure 5. Safe operating area for TO-220 Figure 6. Thermal impedance for TO-220 GIPG230620141253LM ID (A) is 10µs n) (o DS Op Lim era ite tion d by in th m is ax ar R e a 10 100µs 1 1ms 10ms Tj=150°C Tc=25°C Single pulse 0.1 0.1 1 10 VDS(V) 100 Figure 8. Transfer characteristics Figure 7. Output characteristics GIPG02306141524LM ID (A) VGS=7,8, 9, 10V 28 ID (A) GIPG2606141243LM VDS=17.5 V 28 6V 24 24 20 20 16 16 5V 12 12 8 8 4 0 0 4 4V 8 4 12 16 20 VDS(V) Figure 9. Gate charge vs. gate-source voltage GIPG2606141304LM VDS VGS (V) VDS 12 (V) 400 VDD=400 V ID=13 A 350 10 0 0 2 4 6 8 VGS(V) 10 Figure 10. Capacitance variations GIPG2606141318LM C (pF) 1000 Ciss 300 8 250 200 6 100 2 DS10450 - Rev 6 0 Coss 150 4 0 100 10 50 5 10 15 20 0 Qg(nC) 1 0.1 Crss 1 10 100 VDS(V) page 6/24 STD16N50M2, STF16N50M2, STP16N50M2 Electrical characteristics (curves) Figure 11. Normalized gate threshold voltage vs. temperature GIPG2606141354LM VGS(th) (norm) ID=250 µA 1.1 Figure 12. Normalized V(BR)DSS vs. temperature GIPG2606141424LM V(BR)DSS (norm) ID=1 mA 1.08 1.0 1.04 0.9 1.00 0.8 0.96 0.92 0.7 0.6 -75 25 -25 75 125 TJ(°C) Figure 13. Static drain-source on-resistance GIPG2606141319LM RDS(on) (Ω) 0.88 -75 25 -25 125 TJ(°C) Figure 14. Normalized on-resistance vs. temperature GIPG2606141410LM RDS(on) (norm) VGS=10V 75 VGS=10V 2.2 1.8 0.250 1.4 1 0.240 0.6 0.230 0 2 4 6 8 10 12 ID(A) Figure 15. Output capacitance stored energy GIPG26067141339LM Eoss (µJ) 0.2 -75 25 -25 75 TJ(°C) 125 Figure 16. Source- drain diode forward characteristics GIPG2606141300LM VSD(V) 1.2 4 1 3 TJ=-50°C 0.9 0.8 2 TJ=25°C 0.7 1 0 0 DS10450 - Rev 6 TJ=150°C 0.6 100 200 300 400 500 VDS(V) 0.5 0 2 4 6 8 10 12 ISD(A) page 7/24 STD16N50M2, STF16N50M2, STP16N50M2 Test circuits 3 Test circuits Figure 17. Test circuit for resistive load switching times Figure 18. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 19. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A B B 3.3 µF D G + VD 100 µH fast diode B Figure 20. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 22. Switching time waveform Figure 21. Unclamped inductive waveform ton V(BR)DSS td(on) VD toff td(off) tr tf 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS10450 - Rev 6 page 8/24 STD16N50M2, STF16N50M2, STP16N50M2 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS10450 - Rev 6 page 9/24 STD16N50M2, STF16N50M2, STP16N50M2 DPAK (TO-252) type A2 package information 4.1 DPAK (TO-252) type A2 package information Figure 23. DPAK (TO-252) type A2 package outline 0068772_type-A2_rev25 DS10450 - Rev 6 page 10/24 STD16N50M2, STF16N50M2, STP16N50M2 DPAK (TO-252) type A2 package information Table 8. DPAK (TO-252) type A2 mechanical data Dim. mm Min. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 5.10 5.20 5.30 e 2.159 2.286 2.413 e1 4.445 4.572 4.699 H 9.35 10.10 L 1.00 1.50 L1 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 R V2 DS10450 - Rev 6 Typ. 5.10 5.25 6.60 1.00 0.20 0° 8° page 11/24 STD16N50M2, STF16N50M2, STP16N50M2 DPAK (TO-252) type C2 package information 4.2 DPAK (TO-252) type C2 package information Figure 24. DPAK (TO-252) type C2 package outline 0068772_C2_25 DS10450 - Rev 6 page 12/24 STD16N50M2, STF16N50M2, STP16N50M2 DPAK (TO-252) type C2 package information Table 9. DPAK (TO-252) type C2 mechanical data Dim. mm Min. Typ. Max. A 2.20 2.30 2.38 A1 0.90 1.01 1.10 A2 0.00 0.10 b 0.72 0.85 b4 5.13 c 0.47 0.60 c2 0.47 0.60 D 6.00 D1 5.10 E 6.50 E1 5.20 e 2.186 2.286 2.386 H 9.80 10.10 10.40 L 1.40 1.50 1.70 L1 L2 6.20 5.60 6.60 6.70 5.50 0.90 1.25 0.51 BSC 0.60 L6 DS10450 - Rev 6 6.10 5.46 2.90 REF L3 L4 5.33 0.80 1.00 1.80 BSC θ1 5° 7° 9° θ2 5° 7° 9° V2 0° 8° page 13/24 STD16N50M2, STF16N50M2, STP16N50M2 DPAK (TO-252) type C2 package information Figure 25. DPAK (TO-252) recommended footprint (dimensions are in mm) FP_0068772_25 DS10450 - Rev 6 page 14/24 STD16N50M2, STF16N50M2, STP16N50M2 DPAK (TO-252) packing information 4.3 DPAK (TO-252) packing information Figure 26. DPAK (TO-252) tape outline 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 DS10450 - Rev 6 page 15/24 STD16N50M2, STF16N50M2, STP16N50M2 DPAK (TO-252) packing information Figure 27. DPAK (TO-252) reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 10. DPAK (TO-252) tape and reel mechanical data Tape Dim. mm mm Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 DS10450 - Rev 6 Reel Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 18.4 22.4 page 16/24 STD16N50M2, STF16N50M2, STP16N50M2 TO-220FP package information 4.4 TO-220FP package information Figure 28. TO-220FP package outline 7012510_Rev_12_B DS10450 - Rev 6 page 17/24 STD16N50M2, STF16N50M2, STP16N50M2 TO-220FP package information Table 11. TO-220FP package mechanical data Dim. mm Min. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 DS10450 - Rev 6 Typ. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 page 18/24 STD16N50M2, STF16N50M2, STP16N50M2 TO-220 type A package information 4.5 TO-220 type A package information Figure 29. TO-220 type A package outline 0015988_typeA_Rev_22 DS10450 - Rev 6 page 19/24 STD16N50M2, STF16N50M2, STP16N50M2 TO-220 type A package information Table 12. TO-220 type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.55 c 0.48 0.70 D 15.25 15.75 D1 DS10450 - Rev 6 Typ. 1.27 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 page 20/24 STD16N50M2, STF16N50M2, STP16N50M2 Ordering information 5 Ordering information Table 13. Ordering information Order code Marking STD16N50M2 STF16N50M2 STP16N50M2 DS10450 - Rev 6 16N50M2 Package Packing DPAK Tape and reel TO-220FP TO-220 Tube page 21/24 STD16N50M2, STF16N50M2, STP16N50M2 Revision history Table 14. Document revision history Date Revision Changes 04-Jul-2014 1 Initial release. 18-Jul-2014 2 Updated Figure 9. 31-Jul-2014 3 Updated Figure 2 and Figure 4. Datasheet promoted from preliminary data to production data 25-Aug-2016 4 Changed: Section 4.1: "DPAK (TO-252) type A2 package information" Minor text changes Updated marking in Table 1: "Device summary". 04-May-2017 5 Updated Figure 3: "Thermal impedance for DPAK". Minor text changes 04-Dec-2018 DS10450 - Rev 6 6 Updated Features, Table 1. Absolute maximum ratings, Table 4. On /off states, Table 5. Dynamic. Added Section 4.2 DPAK (TO-252) type C2 package information and Section 5 Ordering information. page 22/24 STD16N50M2, STF16N50M2, STP16N50M2 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 5 4.1 DPAK (TO-252) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.2 DPAK (TO-252) type C2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.3 DPAK (TO-252) packing information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.4 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 4.5 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23 DS10450 - Rev 6 page 23/24 STD16N50M2, STF16N50M2, STP16N50M2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS10450 - Rev 6 page 24/24