STF16N65M5, STI16N65M5
STP16N65M5,STU16N65M5,STW16N65M5
N-channel 650 V, 0.230 Ω, 12 A MDmesh™ V Power MOSFET
in TO-220FP, I²PAK, TO-220, IPAK, TO-247
Features
TAB
TAB
VDSS @
TJmax
Type
STF16N65M5
STI16N65M5
STP16N65M5
STU16N65M5
STW16N65M5
RDS(on)
max
ID
3
1
3
12
2
TO-220FP
710 V
< 0.279 Ω
I²PAK
3
1
2
TO-220
12 A
TAB
3
2
■
Worldwide best RDS(on)
■
Higher VDSS rating
■
High dv/dt capability
■
Excellent switching performance
■
Easy to drive
■
100% avalanche tested
1
IPAK
Figure 1.
3
TO-247
Internal schematic diagram
$4!"
Applications
■
2
1
Switching applications
Description
'
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1.
!-V
Device summary
Order codes
STF16N65M5
STI16N65M5
STP16N65M5
STU16N65M5
STW16N65M5
October 2011
3
Marking
Package
Packaging
16N65M5
TO-220FP
I²PAK
TO-220
IPAK
TO-247
Tube
Doc ID 15210 Rev 4
1/20
www.st.com
20
Contents
STF/I/P/U/W16N65M5
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
2/20
.............................................. 9
Doc ID 15210 Rev 4
STF/I/P/U/W16N65M5
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
TO-220, I²PAK,
IPAK, TO-247
TO-220FP
VDS
Drain-source voltage (VGS = 0)
VGS
Gate-source voltage
Unit
650
V
± 25
V
(1)
12
A
ID
Drain current (continuous) at TC = 25 °C
12
ID
Drain current (continuous) at TC = 100 °C
7.3 (1)
7.3
A
(1)
48
A
25
W
IDM
(2)
PTOT
Drain current (pulsed)
48
Total dissipation at TC = 25 °C
90
IAR
Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max)
4
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
200
mJ
Peak diode recovery voltage slope
15
V/ns
dv/dt (3)
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
Tstg
Storage temperature
Tj
2500
V
- 55 to 150
°C
150
°C
Max. operating junction temperature
1. Limited by maximum junction temperature
2. Pulse width limited by safe operating area
3. ISD ≤ 12 A, di/dt ≤ 400 A/µs, VDD = 400 V, VPeak < V(BR)DSS
Table 3.
Thermal data
Value
Symbol
Parameter
Unit
TO-220FP I²PAK TO-220
Rthj-case
Thermal resistance junction-case
max
Rthj-amb
Thermal resistance junctionambient max
Tl
5
Maximum lead temperature for
soldering purpose
Doc ID 15210 Rev 4
IPAK
TO-247
1.38
62.5
100
300
°C/W
50
°C/W
°C
3/20
Electrical characteristics
2
STF/I/P/U/W16N65M5
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4.
Symbol
V(BR)DSS
On /off states
Parameter
Test conditions
Drain-source
breakdown voltage
(VGS = 0)
ID = 1 mA
Min.
Typ.
Max.
Unit
650
V
IDSS
VDS = 650 V
Zero gate voltage
drain current (VGS = 0) VDS = 650 V, TC=125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
100
nA
4
5
V
0.230
0.279
Ω
Min.
Typ.
Max.
Unit
-
1250
30
3
-
pF
pF
pF
-
100
-
pF
-
30
-
pF
VGS = ± 25 V
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on
resistance
Table 5.
Symbol
Ciss
Coss
Crss
3
VGS = 10 V, ID = 6 A
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Co(tr)(1)
Equivalent
capacitance time
related
Co(er)(2)
Equivalent
capacitance energy
related
Test conditions
VDS = 100 V, f = 1 MHz,
VGS = 0
VDS = 0 to 520 V, VGS = 0
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
2
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 520 V, ID = 6 A,
VGS = 10 V
(see Figure 20)
-
31
8
12
-
nC
nC
nC
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS
4/20
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STF/I/P/U/W16N65M5
Table 6.
Symbol
td (v)
tr (v)
tf (i)
tc(off)
Table 7.
Electrical characteristics
Switching times
Parameter
Test conditions
VDD = 400 V, ID = 8 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 21)
(see Figure 24)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Parameter
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
IRRM
trr
Qrr
IRRM
Typ.
-
25
7
6
8
Min.
Typ.
Max
Unit
-
ns
ns
ns
ns
Source drain diode
Symbol
trr
Qrr
Min.
Test conditions
Max. Unit
-
12
48
A
A
ISD = 12 A, VGS = 0
-
1.5
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 12 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 24)
-
300
3.5
23
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 12 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 24)
-
350
4
24
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 15210 Rev 4
5/20
Electrical characteristics
STF/I/P/U/W16N65M5
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220FP
Figure 3.
Thermal impedance for TO-220FP
Figure 5.
Thermal impedance for TO-220,
I²PAK, TO-247
Figure 7.
Thermal impedance for IPAK
AM08611v1
1
D
S(
on
)
10
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
ID
(A)
10µs
100µs
1ms
10ms
0.1
Tj=150°C
Tc=25°C
Single pulse
0.01
0.1
Figure 4.
10
1
100
VDS(V)
Safe operating area for TO-220,
I²PAK, TO-247
AM08610v1
)
on
10µs
D
S(
10
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
ID
(A)
1
100µs
1ms
10ms
0.1
Tj=150°C
Tc=25°C
Single pulse
0.01
0.1
Figure 6.
10
1
100
Safe operating area for IPAK
AM08609v1
on
)
10µs
D
S(
O
Li per
m at
ite io
d ni
by n
m this
ax a
R rea
is
ID
(A)
10
VDS(V)
1
100µs
1ms
10ms
0.1
Tj=150°C
Tc=25°C
Single pulse
0.01
0.1
6/20
1
10
100
VDS(V)
Doc ID 15210 Rev 4
STF/I/P/U/W16N65M5
Figure 8.
Electrical characteristics
Output characteristics
ID
(A)
Figure 9.
AM03178v1
VGS=10V
Transfer characteristics
AM03179v1
ID
(A)
VDS=10V
7.5V
20
20
7V
15
15
6.5V
10
10
6V
5
5
5.5V
0
0
2
6
4
8 10 12 14 16 18
0
VDS(V)
Figure 10. Normalized BVDSS vs temperature
AM03187v1
BVDSS
(norm)
ID=1mA
3
1.05
0.240
1.03
0.235
1.01
0.230
0.99
0.225
0.97
0.220
0.95
0.215
25
50
75 100
TJ(°C)
Figure 12. Output capacitance stored energy
AM03312v1
Eoss
(µJ)
7
8
9
VGS(V)
AM03181v1
RDS(on)
(Ω)
0.245
0
7
6
Figure 11. Static drain-source on resistance
1.07
0.93
-50 -25
5
4
0.210
0
VGS=10V
4
2
8
6
10
12 ID(A)
Figure 13. Capacitance variations
AM03183v1
C
(pF)
10000
6
5
Ciss
1000
4
100
3
Coss
2
10
Crss
1
0
0
100 200
300 400
500 600
VDS(V)
Doc ID 15210 Rev 4
1
0.1
1
10
100
VDS(V)
7/20
Electrical characteristics
STF/I/P/U/W16N65M5
Figure 14. Gate charge vs gate-source voltage Figure 15. Normalized on resistance vs
temperature
AM03182v1
VGS
(V)
(norm)
VDD=520V
ID=6A
12
AM03185v1
RDS(on)
VGS=10V
ID=6.5V
2.1
500
VDS
1.9
10
400
8
1.7
1.5
300
6
200
4
1.3
1.1
0.9
100
2
0
0
5
10
15
20
25
30
35 Qg(nC)
Figure 16. Normalized gate threshold voltage
vs temperature
AM03184v1
VGS(th)
(norm)
ID=250µA
1.10
0.7
0.5
-50
0
50
TJ(°C)
100
Figure 17. Source-drain diode forward
characteristics
AM03186v1
VSD
(V)
1.0
TJ=-25°C
0.9
1.00
0.8
0.90
TJ=25°C
0.7
TJ=150°C
0.6
0.80
0.5
0.4
0.70
-50
50
0
TJ(°C)
100
Figure 18. Switching losses vs gate resistance
(1)
AM10359v1
E
(μJ)
100
Eon
80
60
Eoff
40
20
0
0
10
20
30
40
RG(Ω)
1. Eon including reverse recovery of a SiC diode
8/20
Doc ID 15210 Rev 4
0
5
10
ISD(A)
STF/I/P/U/W16N65M5
3
Test circuits
Test circuits
Figure 19. Switching times test circuit for
resistive load
Figure 20. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 21. Test circuit for inductive load
Figure 22. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 23. Unclamped inductive waveform
V(BR)DSS
AM01471v1
Figure 24. Switching time waveform
Concept waveform for Inductive Load Turn-off
Id
VD
90%Vds
90%Id
Tdelay-off
-off
IDM
Vgs
90%Vgs
on
ID
Vgs(I(t))
))
VDD
VDD
10%Id
10%Vds
Vds
Trise
AM01472v1
Doc ID 15210 Rev 4
Tfall
Tcross --over
AM05540v1
9/20
Package mechanical data
4
STF/I/P/U/W16N65M5
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
10/20
Doc ID 15210 Rev 4
STF/I/P/U/W16N65M5
Table 8.
Package mechanical data
TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
Figure 25. TO-220FP drawing
L7
E
A
B
D
Dia
L5
L6
F1
F2
F
G
H
G1
L4
L2
L3
7012510_Rev_K
Doc ID 15210 Rev 4
11/20
Package mechanical data
Table 9.
STF/I/P/U/W16N65M5
I²PAK (TO-262) mechanical data
mm.
DIM.
min.
typ
max.
A
4.40
4.60
A1
2.40
2.72
b
0.61
0.88
b1
1.14
1.70
c
0.49
0.70
c2
1.23
1.32
D
8.95
9.35
e
2.40
2.70
e1
4.95
5.15
E
10
10.40
L
13
14
L1
3.50
3.93
L2
1.27
1.40
Figure 26. I²PAK (TO-262) drawing
0004982_Rev_H
12/20
Doc ID 15210 Rev 4
STF/I/P/U/W16N65M5
Table 10.
Package mechanical data
TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
∅P
3.75
3.85
Q
2.65
2.95
Doc ID 15210 Rev 4
13/20
Package mechanical data
STF/I/P/U/W16N65M5
Figure 27. TO-220 type A drawing
0015988_typeA_Rev_S
14/20
Doc ID 15210 Rev 4
STF/I/P/U/W16N65M5
Table 11.
Package mechanical data
IPAK (TO-251) mechanical data
mm.
DIM.
min.
typ
max.
A
2.20
2.40
A1
0.90
1.10
b
0.64
0.90
b2
b4
0.95
5.20
5.40
0.3
B5
c
0.45
0.60
c2
0.48
0.60
D
6.00
6.20
E
6.40
6.60
e
e1
2.28
4.40
4.60
H
16.10
L
9.00
9.40
L1
0.80
1.20
L2
0.80
V1
o
10
Doc ID 15210 Rev 4
1.00
15/20
Package mechanical data
STF/I/P/U/W16N65M5
Figure 28. IPAK (TO-251) drawing
0068771_H
16/20
AM09214V1
Doc ID 15210 Rev 4
STF/I/P/U/W16N65M5
Table 12.
Package mechanical data
TO-247 mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.45
L
14.20
14.80
L1
3.70
4.30
L2
18.50
∅P
3.55
3.65
∅R
4.50
5.50
S
5.50
Doc ID 15210 Rev 4
17/20
Package mechanical data
STF/I/P/U/W16N65M5
Figure 29. TO-247 drawing
0075325_F
18/20
Doc ID 15210 Rev 4
STF/I/P/U/W16N65M5
5
Revision history
Revision history
Table 13.
Document revision history
Date
Revision
12-Feb-2009
1
First release.
21-Oct-2010
2
– Document status promoted from preliminary data to datasheet.
– Added new package, mechanical data: I²PAK.
– Removed DPAK, D²PAK packages and mechanical data.
10-Feb-2011
3
Modified RDS(on) value (see Table 4 and Figure 11).
4
Modified Section 2.1: Electrical characteristics (curves):
– Figure 8, Figure 9, Figure 10, Figure 11, Figure 15 and Figure 16
– Added Figure 18
Updated RDS(on) value in Table 4
Updated values in Table 6
Minor text changes.
13-Oct-2011
Changes
Doc ID 15210 Rev 4
19/20
STF/I/P/U/W16N65M5
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20/20
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