STF16NK60Z

STF16NK60Z STP16NK60Z, STW16NK60Z N-channel 600 V, 038 Ω, 14 A, TO-220, TO-220FP, TO-247 Zener-protected SuperMESH™ Power MOSFET Features Type VDSS RDS(on) max STF16NK60Z 600 V < 0.42 Ω 14 A(1) 40 W STP16NK60Z 600 V < 0.42 Ω 14 A 190 W STW16NK60Z 600 V < 0.42 Ω 14 A 190 W ID Pw 3 3 1 2 1 2 TO-220 TO-220FP 1. Limited by package. ■ 100% avalanche tested ■ Extremely high dv/dt capability 2 ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability TO-247 Figure 1. Internal schematic diagram Application ■ 3 1 D(2) Switching applications Description G(1) The new SuperMESH™ series of Power MOSFETS is the result of further design improvements on ST's well-established stripbased PowerMESH™ layout. In addition to significantly lower on-resistance, the device offers superior dv/dt capability to ensure optimal performance even in the most demanding applications. The SuperMESH™ devices further complement an already broad range of innovative high voltage MOSFETs, which includes the revolutionary MDmesh™ products. Table 1. S(3) AM01476v1 Device summary Order codes Marking Package STF16NK60Z F16NK60Z TO-220FP STP16NK60Z P16NK60Z TO-220 STW16NK60Z W16NK60Z TO-247 December 2009 Doc ID 10249 Rev 5 Packaging Tube 1/15 www.st.com 15 Contents STF16NK60Z, STP16NK60Z, STW16NK60Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 .............................................. 9 Doc ID 10249 Rev 5 STF16NK60Z, STP16NK60Z, STW16NK60Z 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220 / TO-247 TO-220FP VDS Drain-source voltage (VGS = 0) 600 V VGS Gate- source voltage ± 30 V ID ID IDM (2) PTOT 14 14 (1) A 8.8 8.8 (1) A Drain current (pulsed) 56 56(1) A Total dissipation at TC = 25 °C 190 40 W Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Derating factor 1.51 W/°C VESD(G-S) Gate source ESD(HBM-C = 100 pF, R = 1.5 kΩ) 6000 V dv/dt (3) Peak diode recovery voltage slope 4.5 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature Tj 2500 Max. operating junction temperature V -55 to 150 °C 150 °C 1. Limited by package 2. Pulse width limited by safe operating area 3. ISD ≤ 14 A, di/dt ≤ 200 A/µs, VDD = 80% V(BR)DSS Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Tl Maximum lead temperature for soldering purpose Table 4. TO-220 TO-247 0.66 62.5 50 TO-220FP Unit 3.1 °C/W 62.5 °C/W 300 °C Avalanche characteristics Symbol Parameter Max value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 14 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 360 mJ Doc ID 10249 Rev 5 3/15 Electrical characteristics 2 STF16NK60Z, STP16NK60Z, STW16NK60Z Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 IDSS VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Gate threshold voltage VDS = VGS, ID = 50 µA RDS(on) Static drain-source on resistance Symbol Ciss Coss Crss COSS eq(1) Qg Qgs Qgd Typ. Max. Unit 620 V 1 50 µA µA ± 10 µA 3.75 4.5 V 0.38 0.42 Ω VGS = ± 20 V VGS(th) Table 6. Min. 3 VGS = 10 V, ID = 7 A Dynamic Parameter Test conditions Min. Typ. Max. Unit Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 - 2650 285 62 - pF pF pF Equivalent output capacitance VGS = 0, VDS = 0 to 480 V - 158 - pF Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 14 A, VGS = 10 V (see Figure 19) - 86 17 46 - nC nC nC 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 7. Symbol td(on) tr td(off) tf 4/15 Switching times Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 480 V, ID = 14 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18) Doc ID 10249 Rev 5 Min. Typ. - 30 25 70 15 Max Unit - ns ns ns ns STF16NK60Z, STP16NK60Z, STW16NK60Z Table 8. Source drain diode Symbol Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage trr Qrr IRRM trr Qrr IRRM Electrical characteristics Test conditions Min. Typ. Max. Unit - 14 56 A A ISD = 14 A, VGS = 0 - 1.6 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 14 A, di/dt = 100 A/µs VDD = 100 V (see Figure 23) - 490 5.4 22 ns nC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 14 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 23) - 585 7 24 ns nC A Min Typ 30 - 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Table 9. Symbol BVGSO Gate-source Zener diode Parameter Test conditions Gate-source breakdown voltage Igs=± 1 mA (open drain) Max Unit - V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID 10249 Rev 5 5/15 Electrical characteristics STF16NK60Z, STP16NK60Z, STW16NK60Z 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 7. Thermal impedance for TO-247 AM01498v1 10 0 ) on 10µs S( 10 1 O p lim era ite tio d n by in m thi ax s a R re D a is ID (A) 100µs 1ms 10ms 10 -1 10-2 10-1 Figure 6. 6/15 10 0 10 1 10 2 VDS(V) Safe operating area for TO-247 Doc ID 10249 Rev 5 STF16NK60Z, STP16NK60Z, STW16NK60Z Figure 8. Output characteristics Electrical characteristics Figure 9. Figure 10. Normalized BVDSS vs temperature Transfer characteristics Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations Doc ID 10249 Rev 5 7/15 Electrical characteristics STF16NK60Z, STP16NK60Z, STW16NK60Z Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Maximum avalanche energy vs temperature 8/15 Doc ID 10249 Rev 5 STF16NK60Z, STP16NK60Z, STW16NK60Z 3 Test circuits Test circuits Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 22. Unclamped inductive waveform AM01471v1 Figure 23. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 10249 Rev 5 10% AM01473v1 9/15 Package mechanical data 4 STF16NK60Z, STP16NK60Z, STW16NK60Z Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/15 Doc ID 10249 Rev 5 STF16NK60Z, STP16NK60Z, STW16NK60Z Table 10. Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Figure 24. TO-220FP drawing L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_K Doc ID 10249 Rev 5 11/15 Package mechanical data STF16NK60Z, STP16NK60Z, STW16NK60Z TO-220 type A mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max 4.60 0.88 1.70 0.70 15.75 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 16.40 28.90 3.75 2.65 3.85 2.95 0015988_Rev_S 12/15 Doc ID 10249 Rev 5 STF16NK60Z, STP16NK60Z, STW16NK60Z Package mechanical data TO-247 Mechanical data mm. Dim. A Min. 4.85 Typ Max. 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 L1 3.70 14.80 4.30 L2 18.50 øP 3.55 3.65 øR 4.50 5.50 S 5.50 Doc ID 10249 Rev 5 13/15 Revision history 5 STF16NK60Z, STP16NK60Z, STW16NK60Z Revision history Table 11. 14/15 Document revision history Date Revision Changes 11-Sep-2006 3 07-Jun-2007 4 Added statement for ECOPACK®. 04-Dec-2009 5 Updated packages mechanical data. Doc ID 10249 Rev 5 STF16NK60Z, STP16NK60Z, STW16NK60Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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