STF17N80K5
N-channel 800 V, 0.29 Ω typ., 14 A MDmesh™ K5
Power MOSFET in a TO-220FP package
Datasheet - production data
Features
TO-220FP
Order code
VDS
RDS(on) max.
ID
STF17N80K5
800 V
0.34 Ω
14 A
Industry’s lowest RDS(on) x area
Industry’s best figure of merit (FoM)
Ultra-low gate charge
100% avalanche tested
Zener-protected
Applications
Figure 1: Internal schematic diagram
D(2)
Switching applications
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
G(1)
S(3)
AM15572v1_no_tab
Table 1: Device summary
Order code
Marking
Package
Packing
STF17N80K5
17N80K5
TO-220FP
Tube
January 2016
DocID027695 Rev 2
This is information on a product in full production.
1/13
www.st.com
Contents
STF17N80K5
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3
Test circuits ..................................................................................... 8
4
Package information ....................................................................... 9
4.1
5
2/13
TO-220 FP package information ..................................................... 10
Revision history ............................................................................ 12
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STF17N80K5
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
VGS
Parameter
Gate-source voltage
Value
Unit
± 30
V
ID
Drain current (continuous) at TC = 25 °C
14
A
(1)
ID
(1)
Drain current (continuous) at TC = 100 °C
9
A
(2)
IDM
Drain current (pulsed)
56
A
PTOT
Total dissipation at TC = 25 °C
30
W
VISO
Insulation withstand voltage (RMS) from all three leads to
external heat sink (t=1 s; TC=25 °C)
2500
V
dv/dt
(3)
Peak diode recovery voltage slope
4.5
dv/dt
(4)
MOSFET dv/dt ruggedness
50
TJ
Operating junction temperature range
Tstg
Storage temperature range
V/ns
- 55 to 150
°C
Notes:
(1)
(2)
Limited by maximum junction temperature.
Pulse width limited by safe operating area
(3)
ISD ≤ 14 A, di/dt 100 A/μs; VDS peak < V(BR)DSS,VDD= 400 V
(4)
VDS ≤ 640 V
Table 3: Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
4.2
°C/W
Rthj-amb
Thermal resistance junction-ambient
62.5
°C/W
Value
Unit
Table 4: Avalanche characteristics
Symbol
Parameter
IAR
Avalanche current, repetitive or not repetitive (pulse width
limited by Tjmax)
4.7
A
EAS
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR,
VDD = 50 V)
340
mJ
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Electrical characteristics
2
STF17N80K5
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 5: On/off-state
Symbol
V(BR)DSS
Parameter
Drain-source breakdown voltage
Test conditions
Min.
VGS = 0 V, ID = 1 mA
800
Typ.
Max.
Unit
V
VGS = 0 V, VDS = 800 V
1
µA
IDSS
Zero gate voltage drain current
VGS = 0 V, VDS = 800 V
TC = 125 °C
50
µA
IGSS
Gate body leakage current
VDS = 0 V, VGS = ±25 V
±10
µA
VGS(th)
Gate threshold voltage
VDD = VGS, ID = 250 µA
4
5
V
RDS(on)
Static drain-source on-resistance
VGS = 10 V, ID = 7 A
0.29
0.34
Ω
Min.
Typ.
Max.
Unit
-
866
-
pF
-
64
-
pF
-
0.42
-
pF
-
142
-
pF
-
51
-
pF
3
Table 6: Dynamic
Symbol
Ciss
Parameter
Test conditions
Input capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0 V
Coss
Output capacitance
Crss
Reverse transfer capacitance
(1)
Co(tr)
(2)
Co(er)
Equivalent capacitance time
related
Equivalent capacitance energy
related
VDS = 0 to 640 V,
VGS = 0 V
Rg
Intrinsic gate resistance
f = 1 MHz , ID= 0 A
-
5
-
Ω
Qg
Total gate charge
-
26
-
nC
Qgs
Gate-source charge
-
7.2
-
nC
Qgd
Gate-drain charge
VDD = 640 V, ID = 14 A
VGS= 10 V
See (Figure 15: "Test
circuit for gate charge
behavior")
-
15.2
-
nC
Notes:
(1)
Time related is defined as a constant equivalent capacitance giving the same charging time as C oss when VDS
increases from 0 to 80% VDSS
(2)
Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS
increases from 0 to 80% VDSS
Table 7: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD= 400 V, ID =7 A, RG = 4.7 Ω
VGS = 10 V
See (Figure 14: "Test circuit for
resistive load switching times" and
Figure 19: "Switching time waveform")
-
14.8
-
ns
-
10.8
-
ns
-
84.3
-
ns
-
10.1
-
ns
tr
td(off)
tf
4/13
Rise time
Turn-off delay time
Fall time
DocID027695 Rev 2
STF17N80K5
Electrical characteristics
Table 8: Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Source-drain current
-
14
A
(1)
Source-drain current
(pulsed)
-
56
A
(2)
Forward on voltage
ISD = 14 A, VGS = 0 V
-
1.6
V
trr
Reverse recovery time
-
439
ns
Qrr
Reverrse recovery charge
-
6.37
µC
IRRM
Reverse recovery current
ISD = 14 A, di/dt = 100 A/µs,VDD
= 60 V
See Figure 16: "Test circuit for
inductive load switching and
diode recovery times"
-
29
A
ISD = 14 A, di/dt = 100 A/µs VDD
= 60 V, Tj = 150 °C
See Figure 16: "Test circuit for
inductive load switching and
diode recovery times"
-
626
ns
-
8.36
µC
-
26.7
A
ISD
ISDM
VSD
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
Notes:
(1)
(2)
Pulse width limited by safe operating area
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 9: Gate-source Zener diode
Symbol
V(BR)GSO
Parameter
Gate-source breakdown voltage
Test conditions
IGS= ± 1mA, ID= 0 A
Min.
Typ.
Max.
Unit
30
-
-
V
The built-in back-to-back Zener diodes are specifically designed to enhance the ESD
performance of the device. The Zener voltage facilitates efficient and cost-effective device
integrity protection,thus eliminating the need for additional external componentry.
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Electrical characteristics
2.2
6/13
STF17N80K5
Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage
Figure 7: Static drain-source on-resistance
DocID027695 Rev 2
STF17N80K5
Electrical characteristics
Figure 8: Capacitance variations
Figure 9: Normalized gate threshold voltage
vs temperature
Figure 10: Normalized on-resistance vs
temperature
Figure 11: Normalized V(BR)DSS vs temperature
Figure 12: Source-drain diode forward
characteristics
Figure 13: Maximum avalanche energy vs
starting TJ
DocID027695 Rev 2
7/13
Test circuits
3
8/13
STF17N80K5
Test circuits
Figure 14: Test circuit for resistive load
switching times
Figure 15: Test circuit for gate charge
behavior
Figure 16: Test circuit for inductive load
switching and diode recovery times
Figure 17: Unclamped inductive load test
circuit
Figure 18: Unclamped inductive waveform
Figure 19: Switching time waveform
DocID027695 Rev 2
STF17N80K5
4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
®
ECOPACK is an ST trademark.
DocID027695 Rev 2
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Package information
4.1
STF17N80K5
TO-220 FP package information
Figure 20: TO-220FP package outline
10/13
DocID027695 Rev 2
STF17N80K5
Package information
Table 10: TO-220FP package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
DocID027695 Rev 2
11/13
Revision history
5
STF17N80K5
Revision history
Table 11: Document revision history
Date
Revision
31-Mar-2015
1
First release.
2
Modified: Table 4: "Avalanche characteristics", Table 6: "Dynamic",
Table 7: "Switching times", and Table 8: "Source-drain diode"
Added: Section 3.1: "Electrical characteristics (curves)"
Minor text changes
20-Jan-2016
12/13
Changes
DocID027695 Rev 2
STF17N80K5
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