STB18NM80, STF18NM80,
STP18NM80, STW18NM80
N-channel 800 V, 0.25 Ω, 17 A, MDmesh™ Power MOSFET
in D²PAK, TO-220FP, TO-220 and TO-247 packages
Datasheet — production data
Features
Order codes
VDSS
RDS(on)
max
ID
STB18NM80
800 V
< 0.295 Ω
17 A
STF18NM80
800 V
< 0.295 Ω
17 A (1)
STP18NM80
800 V
< 0.295 Ω
17 A
STW18NM80
800 V
< 0.295 Ω
17 A
3
3
1
1
D²PAK
2
TO-220FP
1. Limited only by maximum temperature allowed
3
■
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistance
1
2
Figure 1.
3
1
TO-220
Application
■
2
TO-247
Internal schematic diagram
Switching applications
$
Description
These N-channel Power MOSFETs are
developed using STMicroelectronics’
revolutionary MDmesh™ technology, which
associates the multiple drain process with the
company's PowerMESH™ horizontal layout.
These devices offer extremely low on-resistance,
high dv/dt and excellent avalanche
characteristics. Utilizing ST’s proprietary strip
technique, these Power MOSFETs boast an
overall dynamic performance which is superior to
similar products on the market.
Table 1.
'
3
!-V
Device summary
Order codes
Marking
Package
Packaging
D²PAK
Tape and reel
STB18NM80
STF18NM80
TO-220FP
18NM80
STP18NM80
TO-220
STW18NM80
TO-247
May 2012
This is information on a product in full production.
Doc ID 15421 Rev 5
Tube
1/21
www.st.com
21
Contents
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
2/21
.............................................. 9
Doc ID 15421 Rev 5
STB18NM80, STF18NM80, STP18NM80, STW18NM80
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220
D²PAK
TO-247 TO-220FP
VDS
Drain-source voltage
800
V
VGS
Gate-source voltage
± 30
V
ID
Drain current (continuous) at
TC = 25 °C
17
17 (1)
A
ID
Drain current (continuous) at
TC = 100 °C
10.71
10.71(1)
A
IDM (2)
Drain current (pulsed)
68
68 (1)
A
PTOT
Total dissipation at TC = 25 °C
190
40
W
VISO
Insulation withstand voltage (RMS)
from all three leads to external heat
sink (t = 1 s;TC = 25 °C)
2500
V
Tstg
Storage temperature
Tj
-65 to 150
°C
150
°C
Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
Table 3.
Thermal data
Value
Symbol
Parameter
Unit
TO-220
Rthj-case Thermal resistance junction-case
Rthj-amb Thermal resistance junction-amb
Table 4.
Symbol
TO-247 TO-220FP
0.66
62.5
Rthj-pcb Thermal resistance junction-pcb
Tl
D²PAK
Maximum lead temperature for
soldering purpose
50
30
3.13
°C/W
62.5
°C/W
°C/W
300
°C
Avalanche characteristics
Parameter
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAS, VDD = 50 V)
Doc ID 15421 Rev 5
Max value
Unit
4
A
600
mJ
3/21
Electrical characteristics
2
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Electrical characteristics
(TCASE= 25 °C unless otherwise specified)
Table 5.
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Drain-source breakdown
voltage
ID = 1 mA, VGS = 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 800 V,
VDS = 800 V,Tc = 125 °C
10
100
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ± 30 V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
5
V
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 8.5 A
V(BR)DSS
Table 6.
Symbol
800
3
V
4
Ω
0.25 0.295
Dynamic
Parameter
Test conditions
Min. Typ. Max.
Unit
gfs(1)
Forward transconductance
VDS = 15 V, ID= 8.5 A
-
14
-
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz, VGS = 0
-
2070
210
29
-
pF
pF
pF
Equivalent output
capacitance
VGS = 0, VDS = 0 to 640 V
-
316
-
pF
RG
Gate input resistance
f = 1 MHz Gate DC Bias = 0
Test Signal Level = 20 mV
Open Drain
-
4
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 640 V, ID = 17 A
VGS = 10 V
(see Figure 17)
-
70
13
40
-
nC
nC
nC
Coss eq.(2)
1.
On/off states
Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/21
Doc ID 15421 Rev 5
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Table 7.
Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Table 8.
Electrical characteristics
Test conditions
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Min.
Typ.
Max.
Unit
VDD = 400 V, ID = 8.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 16 and
Figure 21)
-
18
28
96
50
-
ns
ns
ns
ns
Test conditions
Min.
Typ.
Max.
Unit
-
17
68
A
A
1.6
V
Source drain diode
Symbol
Parameter
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD(2)
Forward on voltage
ISD = 17 A, VGS = 0
-
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A, di/dt = 100
A/µs, VDD = 100 V,
(see Figure 18)
-
618
9.6
31.2
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A,
di/dt = 100 A/µs,
VDD = 100 V, Tj=150°C
(see Figure 18)
-
822
13
31.8
ns
µC
A
trr
Qrr
IRRM
trr
Qrr
IRRM
1. Pulse width limited by safe operating area
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 15421 Rev 5
5/21
Electrical characteristics
STB18NM80, STF18NM80, STP18NM80, STW18NM80
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220,
D²PAK
Figure 3.
Thermal impedance for TO-220,
D²PAK
Figure 5.
Thermal impedance for TO-247
Figure 7.
Thermal impedance for TO-220FP
ai
s
on
DS
(
Op
Lim erat
i te i o n
d b in
y m this
ax ar
R e
10
)
ID
(A)
10µs
100µs
1ms
1
Tj=150°C
Tc=25°C
10ms
Single
pulse
0.1
0.1
Figure 4.
10
1
100
VDS(V)
Safe operating area for TO-247
ID
(A)
ai
(o
DS
Op
Lim erat
ite ion
d b in
y m this
ax ar
R e
10
n)
s
10µs
100µs
1ms
1
Tj=150°C
Tc=25°C
10ms
Single
pulse
0.1
0.1
Figure 6.
1
10
100
VDS(V)
Safe operating area for TO-220FP
ID
(A)
10
1
is
ea )
ar S(on
is D
th R
x
in
n ma
o
y
ti
ra d b
e
e
p
O imit
L
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
0.1
Single
pulse
0.01
0.1
6/21
1
10
100
VDS(V)
Doc ID 15421 Rev 5
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Figure 8.
Output characteristics
Electrical characteristics
Figure 9.
ID
(A)
Transfer characteristics
ID
(A)
VGS=10V
40
VDS=20V
40
35
35
30
30
7V
25
25
20
20
15
15
10
10
6V
5
5
5V
0
0
5
10
15
20
0
0
VDS(V)
Figure 10. Normalized BVDSS vs temperature
BVDSS
(norm)
2
4
8
6
10 VGS(V)
Figure 11. Static drain-source on-resistance
RDS(on)
(Ω)
ID=1mA
1.06
VGS=10V
0.28
1.03
0.26
1.00
0.24
0.98
0.22
0.95
0.92
-50 -25
0
25
50
75 100
TJ(°C)
0.2
0
10
5
15
ID(A)
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
VGS
(V)
VDD=640V
12
ID=17A
VDS
10
700
C
(pF)
600
100000
VGS
500
10000
Ciss
400
8
1000
6
300
4
200
2
100
100
0
0
20
40
60
80
Coss
Crss
10
0
Qg(nC)
Doc ID 15421 Rev 5
1
0.1
1
10
100
1000
VDS(V)
7/21
Electrical characteristics
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Figure 14. Normalized gate threshold voltage
vs temperature
VGS(th)
(norm)
1.10
Figure 15. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2.1
ID=250µA
ID=8.5A
VGS=10V
1.9
1.7
1.00
1.5
1.3
0.90
1.1
0.9
0.80
0.7
0.70
-50 -25
8/21
0
25
50
75 100
TJ(°C)
0.5
-50 -25
Doc ID 15421 Rev 5
0
25
50
75 100
TJ(°C)
STB18NM80, STF18NM80, STP18NM80, STW18NM80
3
Test circuits
Test circuits
Figure 16. Switching times test circuit for
resistive load
Figure 17. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
AM01469v1
Figure 18. Test circuit for inductive load
Figure 19. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
L
A
D
G
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 20. Unclamped inductive waveform
AM01471v1
Figure 21. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
0
Doc ID 15421 Rev 5
10%
AM01473v1
9/21
Package mechanical data
4
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Table 9.
D²PAK (TO-263) mechanical data
mm
Dim.
Min.
Typ.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
E
10
E1
8.50
10.40
e
2.54
e1
4.88
5.28
H
15
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
10/21
Max.
0.4
0°
8°
Doc ID 15421 Rev 5
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Package mechanical data
Figure 22. D²PAK (TO-263) drawing
0079457_T
Figure 23. D²PAK footprint(a)
16.90
12.20
5.08
1.60
3.50
9.75
Footprint
a. All dimensions are in millimeters
Doc ID 15421 Rev 5
11/21
Package mechanical data
Table 10.
STB18NM80, STF18NM80, STP18NM80, STW18NM80
TO-220FP mechanical data
mm
Dim.
Min.
Typ.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
12/21
Max.
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
Doc ID 15421 Rev 5
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Package mechanical data
Figure 24. TO-220FP drawing
7012510_Rev_K_B
Doc ID 15421 Rev 5
13/21
Package mechanical data
Table 11.
STB18NM80, STF18NM80, STP18NM80, STW18NM80
TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
14/21
Max.
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
∅P
3.75
3.85
Q
2.65
2.95
Doc ID 15421 Rev 5
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Package mechanical data
Figure 25. TO-220 type A drawing
0015988_typeA_Rev_S
Doc ID 15421 Rev 5
15/21
Package mechanical data
Table 12.
STB18NM80, STF18NM80, STP18NM80, STW18NM80
TO-247 mechanical data
mm.
Dim.
Min.
Typ.
A
4.85
5.15
A1
2.20
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.30
L
14.20
14.80
L1
3.70
4.30
5.45
L2
16/21
Max.
5.60
18.50
∅P
3.55
3.65
∅R
4.50
5.50
S
5.30
5.50
Doc ID 15421 Rev 5
5.70
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Package mechanical data
Figure 26. TO-247 drawing
0075325_G
Doc ID 15421 Rev 5
17/21
Packaging mechanical data
5
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Packaging mechanical data
Table 13.
D²PAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
18/21
Dim.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base qty
1000
P2
1.9
2.1
Bulk qty
1000
R
50
T
0.25
0.35
W
23.7
24.3
Doc ID 15421 Rev 5
Min.
Max.
330
13.2
26.4
30.4
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Packaging mechanical data
Figure 27. Tape
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
W
K0
B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v2
Figure 28. Reel
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
Full radius
Tape slot
in core for
tape start 25 mm min.
width
G measured at hub
AM08851v2
Doc ID 15421 Rev 5
19/21
Revision history
6
STB18NM80, STF18NM80, STP18NM80, STW18NM80
Revision history
Table 14.
20/21
Document revision history
Date
Revision
Changes
25-Feb-2009
1
First release.
07-Apr-2009
2
Section 4: Package mechanical data has been modified.
20-Apr-2009
3
RDS(on) max value has been corrected.
09-Sep-2009
4
Document status promoted from preliminary data to datasheet.
25-May-2012
5
Figure 12: Gate charge vs gate-source voltage has been
updated.
Minor text changes.
Doc ID 15421 Rev 5
STB18NM80, STF18NM80, STP18NM80, STW18NM80
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21/21
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