STF20N65M5

STF20N65M5, STFI20N65M5, STFW20N65M5 N-channel 650 V, 0.160 Ω typ., 18 A MDmesh M5 Power MOSFETs in TO-220FP, I²PAKFP and TO-3PF packages Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID 710 V 0.190 Ω 18 A STF20N65M5 STFI20N65M5 I2PAKFP (TO-281) TO-220FP     3 TO-3PF STFW20N65M5 2 1 Figure 1: Internal schematic diagram Applications  D(2) Extremely low RDS(on) Low gate charge and input capacitance Excellent switching performance 100% avalanche tested Switching applications Description These devices are N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the wellknown PowerMESH™ horizontal layout. The resulting products offer extremely low onresistance, making them particularly suitable for applications requiring high power and superior efficiency. G(1) S(3) AM01475v1_noZen_no Tab Table 1: Device summary Order code Marking STF20N65M5 STFI20N65M5 Package TO-220FP 20N65M5 I²PAKFP (TO-281) STFW20N65M5 March 2017 Packaging Tube TO-3FP DocID024223 Rev 3 This is information on a product in full production. 1/18 www.st.com Contents STF20N65M5,STFI20N65M5,STFW20N65M5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curve)........................................................ 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 5 2/18 4.1 TO-220FP package information ...................................................... 11 4.2 I²PAKFP (TO-281) package information ......................................... 13 4.3 TO-3PF package information .......................................................... 15 Revision history ............................................................................ 17 DocID024223 Rev 3 STF20N65M5,STFI20N65M5,STFW20N65M5 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Value Symbol VGS Parameter Unit TO-220FP, I²PAKFP TO-3PF Gate- source voltage ±25 V ID Drain current (continuous) at TC = 25 °C 18(1) A ID Drain current (continuous) at TC = 100 °C 11.3(1) A 36(1) A IDM (2) Drain current (pulsed) PTOT Total dissipation at TC = 25 °C dv/dt (3) Peak diode recovery voltage slope 15 Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) VISO(4) Tstg 3500 - 55 to 150 Operating junction temperature range W V/ns 2500 Storage temperature range Tj 48 30 V °C Notes: (1)Limited (2)Pulse (3)I SD (4)V by maximum junction temperature. width limited by safe operating area ≤ 18 A, di/dt = 400 A/µs, VDS(peak) < V(BR)DSS, VDD = 400 V DS ≤ 520 V Table 3: Thermal data Value Symbol Parameter Unit TO-220FP, I²PAKFP TO-3PF Rthj-case Thermal resistance junction-case 4.17 2.6 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 50 °C/W Table 4: Avalanche characteristics Symbol Parameter IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax ) EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) DocID024223 Rev 3 Value Unit 4 °C/W 270 mJ 3/18 Electrical characteristics 2 STF20N65M5,STFI20N65M5,STFW20N65M5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5: On /off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0, ID = 1 mA Min. Typ. Max. Unit 650 V VGS = 0, VDS = 650 V 1 µA VGS = 0, VDS = 650 V, TC=125 °C (1) 100 µA Gate-body leakage current VDS = 0, VGS = ± 25 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4 5 V RDS(on) Static drain-source onresistance VGS = 10 V, ID = 9 A 0.160 0.190 Ω Min. Typ. Max. Unit - 1434 - pF - 38 - pF - 3.7 - pF - 118 - pF - 35 - pF IDSS Zero gate voltage drain current IGSS 3 Notes: (1)Defined by design, not subject to production test Table 6: Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Co(tr)(1) Test conditions VGS = 0, VDS = 100 V, f = 1 MHz Equivalent capacitance time related VGS = 0, VDS = 0 to 520 V Co(er)(2) Equivalent capacitance energy related RG Intrinsic gate resistance f = 1 MHz, ID=0 A - 3.5 - Ω Qg Total gate charge - 36 - nC Qgs Gate-source charge - 7.5 - nC Qgd Gate-drain charge VDD = 520 V, ID = 9 A, VGS = 0 to 10 V (see Figure 18: "Test circuit for gate charge behavior") - 18 - nC Notes: (1)C o(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. (2)C o(er) is a constant capacitance value that gives the same stored energy as Coss while V DS is rising from 0 to 80% VDSS. 4/18 DocID024223 Rev 3 STF20N65M5,STFI20N65M5,STFW20N65M5 Electrical characteristics Table 7: Switching times Symbol Parameter td(V) Voltage delay time tr(V) Voltage rise time tf(i) Current fall time tc(off) Crossing time Test conditions Min. Typ. Max. Unit VDD = 400 V, ID = 12 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19: "Test circuit for inductive load switching and diode recovery times" and Figure 22: "Switching time waveform") - 43 - ns - 7.5 - ns - 7.5 - ns - 11.5 - ns Min. Typ. Max. Unit Table 8: Source drain diode Symbol Parameter Test conditions ISD Source-drain current - 18 A ISDM(1) Source-drain current (pulsed) - 36 A VSD(2) Forward on voltage ISD = 18 A, VGS = 0 - 1.5 V trr Reverse recovery time - 288 ns Qrr Reverse recovery charge - 4 µC IRRM Reverse recovery current ISD = 18 A, di/dt = 100 A/µs VDD = 100 V (see Figure 19: "Test circuit for inductive load switching and diode recovery times") - 27 A ISD = 18 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 19: "Test circuit for inductive load switching and diode recovery times") - 342 ns - 4.7 µC - 28 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Notes: (1)Pulse width limited by safe operating area (2)Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID024223 Rev 3 5/18 Electrical characteristics 2.1 STF20N65M5,STFI20N65M5,STFW20N65M5 Electrical characteristics (curve) Figure 2: Safe operating area for TO-220FP and I²PAKFP Figure 3: Thermal impedance for for TO-220FP and I²PAKFP Figure 4: Safe operating area for TO-3PF Figure 5: Thermal impedance for TO-3PF d 0.2 0.1 0.05 0.02 0.01 Figure 7: Tranfer characteristics Figure 6: Output characteristics 6/18 DocID024223 Rev 3 STF20N65M5,STFI20N65M5,STFW20N65M5 Figure 8: Gate charge vs gate-source voltage Electrical characteristics Figure 9: Static drain-source on-resistance W Figure 10: Capacitance variations Figure 11: Output capacitance stored energy Figure 12: Normalized gate threshold voltage vs temperature Figure 13: Normalized on-resistance vs temperature DocID024223 Rev 3 7/18 Electrical characteristics STF20N65M5,STFI20N65M5,STFW20N65M5 Figure 14: Source-drain diode forward characteristics Figure 15: Normalized V(BR)DSS vs temperature Figure 16: Switching energy vs gate resistance Eon including reverse recovery of a SiC diode. 8/18 DocID024223 Rev 3 STF20N65M5,STFI20N65M5,STFW20N65M5 3 Test circuits Test circuits Figure 17: Test circuit for resistive load switching times Figure 18: Test circuit for gate charge behavior Figure 19: Test circuit for inductive load switching and diode recovery times Figure 20: Unclamped inductive load test circuit Figure 21: Unclamped inductive waveform Figure 22: Switching time waveform AM05540v2_for_M5 DocID024223 Rev 3 9/18 Package information 4 STF20N65M5,STFI20N65M5,STFW20N65M5 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/18 DocID024223 Rev 3 STF20N65M5,STFI20N65M5,STFW20N65M5 4.1 Package information TO-220FP package information Figure 23: TO-220FP package outline DocID024223 Rev 3 11/18 Package information STF20N65M5,STFI20N65M5,STFW20N65M5 Table 9: TO-220FP package mechanical data mm Dim. Min. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 12/18 Typ. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID024223 Rev 3 STF20N65M5,STFI20N65M5,STFW20N65M5 4.2 Package information I²PAKFP (TO-281) package information Figure 24: I²PAKFP (TO-281) package outline 8291506 Re v. C DocID024223 Rev 3 13/18 Package information STF20N65M5,STFI20N65M5,STFW20N65M5 Table 10: I²PAKFP (TO-281) mechanical data mm Dim. Min. Typ. A 4.40 4.60 B 2.50 2.70 D 2.50 2.75 D1 0.65 0.85 E 0.45 0.70 F 0.75 1.00 F1 14/18 Max. 1.20 G 4.95 5.20 H 10.00 10.40 L1 21.00 23.00 L2 13.20 14.10 L3 10.55 10.85 L4 2.70 3.20 L5 0.85 L6 7.50 DocID024223 Rev 3 1.25 7.60 7.70 STF20N65M5,STFI20N65M5,STFW20N65M5 4.3 Package information TO-3PF package information Figure 25: TO-3PF package outline DocID024223 Rev 3 15/18 Package information STF20N65M5,STFI20N65M5,STFW20N65M5 Table 11: TO-3PF mechanical data mm Dim. Min. Max. A 5.30 5.70 C 2.80 3.20 D 3.10 3.50 D1 1.80 2.20 E 0.80 1.10 F 0.65 0.95 F2 1.80 2.20 G 10.30 11.50 G1 16/18 Typ. 5.45 H 15.30 L 9.80 L2 22.80 23.20 L3 26.30 26.70 L4 43.20 44.40 L5 4.30 4.70 L6 24.30 24.70 L7 14.60 15 N 1.80 2.20 R 3.80 4.20 Dia 3.40 3.80 DocID024223 Rev 3 15.70 10 10.20 STF20N65M5,STFI20N65M5,STFW20N65M5 5 Revision history Revision history Table 12: Document revision history Date Revision 01-Feb-2013 1 First release. Part numbers previously included in datasheet DM00049308 2 Added device in TO-3PF. Modified: Table 2: "Absolute maximum ratings", Table 5: "On /off states". Modified: Figure 2: "Safe operating area for TO-220FP and I²PAKFP", Figure 4: "Safe operating area for TO-3PF", Figure 5: "Thermal impedance for TO-3PF". Minor text changes 3 Modified Table 2: "Absolute maximum ratings", Table 8: "Source drain diode". Modified Figure 2: "Safe operating area for TO-220FP and I²PAKFP", Figure 4: "Safe operating area for TO-3PF", Figure 12: "Normalized gate threshold voltage vs temperature ", Figure 13: "Normalized onresistance vs temperature" and Figure 14: "Source-drain diode forward characteristics ". Minor text changes. 21-Jul-2016 22-Mar-2017 Changes DocID024223 Rev 3 17/18 STF20N65M5,STFI20N65M5,STFW20N65M5 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved 18/18 DocID024223 Rev 3