STP20NM65N
STF20NM65N
N-channel 650 V, 0.250 Ω, 15 A TO-220, TO-220FP
second generation MDmesh™ Power MOSFET
Features
Order codes
VDSS
@Tjmax
RDS(on)
max.
ID
710 V
0.270 Ω
15 A
STP20NM65N
STF20NM65N
■
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100 % avalanche tested
3
■
Low input capacitance and gate charge
■
Low gate input resistance
1
TO-220
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Application
■
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Switching applications
Figure 1.
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Description
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1
2
TO-220FP
Internal schematic diagram
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These devices are N-channel Power MOSFETs
realized using the second generation MDmesh™
technology. This revolutionary Power MOSFET
associates a new vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
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Table 1.
Device summary
Order codes
Marking
Package
Packaging
STP20NM65N
20NM65N
TO-220
Tubes
STF20NM65N
20NM65N
TO-220FP
Tubes
May 2011
Doc ID 13845 Rev 2
1/16
www.st.com
16
Contents
STP20NM65N, STF20NM65N
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristecs (curves)
........................... 6
3
Test circuits
.............................................. 9
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
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Doc ID 13845 Rev 2
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STP20NM65N, STF20NM65N
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220
TO-220FP
VDS
Drain source voltage
650
V
VGS
Gate source voltage
± 25
V
ID
Drain current continuous TC =25 °C
ID
Drain current continuous TC =100 °C
IDM
(2)
PTOT
dv/dt (3)
9.45
Drain current pulsed
uc
60
Total dissipation at TC=25 °C
125
Insulation withstand voltage (RMS) from
all three leads to external heatsink
(t=1 s; TC = 25 °C)
Tstg
TJ
Storage temperature
Max. operating junction temperature
15
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1. Limited only by maximum temperature allowed.
od
30
Pr
Peak diode recovery voltage slope
VISO
)
s
t(
15(1)
15
2500
-55 to 150
150
A
A
A
W
V/ns
V
°C
2. Pulse width limited by safe operating area.
s
(
t
c
3. ISD ≤15 A, di/dt ≤400 A/µs, VDS peak ≤V(BR)DSS, VDD = 80 % V(BR)DSS.
Table 3.
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Thermal data
r
P
e
Symbol
t
e
l
o
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bs
Value
Parameters
Unit
TO-220
TO-220FP
1
4.17
Rthjc
Thermal resistance junction-case max.
Rthja
Thermal resistance junction-ambient
max.
62.50
°C/W
TJ
Max. lead temperature for soldering
purposes
300
°C
Table 4.
°C/W
Avalanche characteristics
Symbol
Parameters
Value
Unit
IAS
Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max)
4
A
EAS
Single pulse avalanche energy (starting
TJ = 25 °C, ID = IAR, VDD = 50 V)
115
mJ
Doc ID 13845 Rev 2
3/16
Electrical characteristics
2
STP20NM65N, STF20NM65N
Electrical characteristics
(TC = 25 °C unless otherwise specified).
Table 5.
On/off states
Symbol
Parameter
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS = 0
lDSS
Zero gate voltage drain
current (VGS=0)
VDS = max rating
VDS = max rating @ 125 °C
lGSS
Gate body leakage
(VDS=0)
VGS= ±25 V, VDS=0
VGS(th)
Gate threshold voltage
ID = 250 µA,
VGS =VDS
RDS(on)
Static drain-source on
resistance
ID=7.5 A, VGS=10 V
Table 6.
Ob
Unit
650
1
100
2
s
b
O
µA
µA
)
s
t(
uc
od
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e
Test conditions
V
100
nA
4
V
3
Ω
0.250 0.270
Min.
Typ.
Max.
-
1280
110
10
-
Unit
pF
Equivalent output
capacitance
VDS = 0 to VGS = 0
-
260
-
pF
RG
Intrinsic gate resistance
f = 1MHz open drain
-
4.8
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate source charge
Gate-drain charge
VDD = 520 V, ID = 15 A,
VGS = 10 V
(see Figure 16)
-
44
8
22
ct
u
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P
e
let
Max.
VDS = 50 V, f = 1MHz, VGS = 0
pF
pF
nC
-
nC
nC
1. Coss eq: defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80 % VDSS.
Table 7.
Symbol
4/16
)
(s
Typ.
Input capacitance
Output capacitance
Reverse capacitance
Coss eq (1)
so
Parameter
Min.
t
e
l
o
Dynamic
Symbol
Ciss
Coss
Crss
Test conditions
Switching times
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tf
Turn-off-delay time
Fall time
Test conditions
VDD = 325 V, ID=7.5 A
Rg=4.7 Ω,
VGS=10 V
(see Figure 15)
(see Figure 20)
Doc ID 13845 Rev 2
Min.
Typ.
Max.
Unit
-
15
13.5
-
ns
ns
-
75
21
-
ns
ns
STP20NM65N, STF20NM65N
Table 8.
Electrical characteristics
Source drain diode
Symbol
Parameter
ISDM (1)
Source drain current
Source drain current
(pulsed)
VSD (2)
Forward on voltage
ISD
Test conditions
Min.
ISD = 15 A, VGS = 0
trr
Reverse recovery time
Qrr
I = 15 A, di/dt = 100 A/µs
Reverse recovery charge SD
VDD = 60 V (see Figure 17)
Reverse recovery current
IRRM
trr
Qrr
IRRM
Max.
Unit
-
15
60
A
A
-
1.6
V
-
-
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %.
ns
5.5
nC
24.5
)
s
(
t
c
u
8
od
r
P
e
1. Pulse width limited by safe operating area.
455
710
Reverse recovery time
ISD =15 A, di/dt = 100 A/µs
Reverse recovery charge VDD = 60 V, Tj = 150 °C
(see Figure 17)
Reverse recovery current
Typ.
24
A
ns
nC
A
t
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Doc ID 13845 Rev 2
5/16
Electrical characteristics
STP20NM65N, STF20NM65N
2.1
Electrical characteristecs (curves)
Figure 2.
Safe operating area for TO-220
Figure 3.
Thermal impedance for TO-220
AM09138v1
ID
(A)
a
DS
(
Op
Lim era
ite tion
d
by in th
m is
ax a r
R e
on
10
)
is
Tj=150°C
Tc=25°C
Single pulse
1
10µs
100µs
1ms
)
s
t(
10ms
0.1
0.1
10
1
Figure 4.
c
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VDS(V)
100
Safe operating area for TO-220FP
Figure 5.
)
is
on
D
S(
ra
ite tio
d ni
by n
m this
ax a
R rea
o
s
b
Tj=150°C
Tc=25°C
Single pulse
O
)
10µs
100µs
t(s
Li
O
m
pe
10
1ms
uc
1
0.1
0.1
d
o
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t
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Figure 6.
bs
O
e
t
le
AM09139v1
ID
(A)
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P
Thermal impedance for TO-220FP
1
10
100
10ms
VDS(V)
Output characteristics
Figure 7.
AM09140v1
ID
(A)
35
VGS=10V
Transfer characteristics
AM09141v1
ID
(A)
VDS=19V
35
30
30
6V
25
25
20
20
15
15
10
10
5V
5
5
0
0
6/16
5
10
15
4V
20 VDS(V)
Doc ID 13845 Rev 2
0
0
2
4
6
8
10
VGS(V)
STP20NM65N, STF20NM65N
Figure 8.
Electrical characteristics
Normalized BVDSS vs temperature
Figure 9.
AM09142v1
BVDSS
(norm)
Static drain-source on resistance
AM09143v1
RDS(on)
(Ω)
VGS=10V
ID=1mA
1.07
0.260
1.05
0.255
1.03
1.01
0.250
0.99
0.245
0.97
)
s
t(
0.240
0.95
0.93
-50 -25
25
0
0.235
0
TJ(°C)
75 100
50
4
2
6
8
10
d
o
r
uc
12
14
ID(A)
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
AM09144v1
VGS
(V)
VDS
VDD=520V
ID=15A
12
eP
AM09145v1
t
e
l
o
500
Ciss
1000
10
400
8
)
(s
300
6
2
0
0
20
10
d
o
r
P
e
30
40
s
b
O
Coss
10
Crss
100
1
0.1
0
50 Qg(nC)
Figure 12. Normalized gate threshold voltage
vs temperature
t
e
l
o
100
200
t
c
u
4
AM09146v1
VGS(th)
s
b
O
C
(pF)
(norm)
1
10
100
VDS(V)
Figure 13. Normalized on resistance vs
temperature
AM09147v1
RDS(on)
(norm)
ID=250µA
1.10
2.1
ID=7.5A
1.9
1.00
1.7
1.5
1.3
0.90
1.1
0.9
0.80
0.7
0.70
-50
-25
0
25
50
75 100
TJ(°C)
0.5
-50 -25
Doc ID 13845 Rev 2
0
25
50
75 100
TJ(°C)
7/16
Electrical characteristics
STP20NM65N, STF20NM65N
Figure 14. Source-drain diode forward
characteristics
AM09148v1
VSD
(V)
1.6
TJ=-50°C
1.4
TJ=25°C
1.2
TJ=150°C
1.0
0.8
)
s
t(
0.6
c
u
d
0.4
0.2
0
2
4
6
8
10
14 16 ISD(A)
12
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Doc ID 13845 Rev 2
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STP20NM65N, STF20NM65N
3
Test circuits
Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
µF
2200
RL
µF
VGS
IG=CONST
VDD
RG
2200
µF
D.U.T.
2.7kΩ
47kΩ
1kΩ
AM01468v1
e
t
le
D.U.T.
VG
c
u
d
PW
PW
)
s
t(
100Ω
Vi=20V=VGMAX
VD
o
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P
AM01469v1
Figure 17. Test circuit for inductive load
Figure 18. Unclamped inductive load test
switching and diode recovery times
circuit
A
A
D.U.T.
FAST
DIODE
B
B
o
s
b
A
D
G
S
t
c
u
3.3
µF
B
25 Ω
D
1000
µF
RG
S
2200
µF
let
3.3
µF
VDD
ID
Vi
P
e
D.U.T.
Pw
AM01470v1
Figure 19. Unclamped inductive waveform
O
L
VD
VDD
d
o
r
G
o
s
b
(s)
L=100µH
-O
AM01471v1
Figure 20. Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDD
VDS
90%
VGS
AM01472v1
0
Doc ID 13845 Rev 2
10%
AM01473v1
9/16
Package mechanical data
4
STP20NM65N, STF20NM65N
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
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Doc ID 13845 Rev 2
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STP20NM65N, STF20NM65N
Table 9.
Package mechanical data
TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
)
s
t(
1.27
E
10
e
2.40
e1
4.95
F
1.23
H1
6.20
J1
2.40
L
13
L1
3.50
L20
u
d
o
Q
e
t
le
so
)
s
(
ct
L30
∅P
c
u
d
10.40
b
O
-
o
r
P
2.70
5.15
1.32
6.60
2.72
14
3.93
16.40
28.90
3.75
3.85
2.65
2.95
r
P
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Doc ID 13845 Rev 2
11/16
Package mechanical data
STP20NM65N, STF20NM65N
Figure 21. TO-220 type A drawing
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0015988_typeA_Rev_S
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Doc ID 13845 Rev 2
STP20NM65N, STF20NM65N
Table 10.
Package mechanical data
TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
G
4.95
G1
2.4
c
u
d
H
10
1.70
e
t
le
L2
16
L3
28.6
L4
9.8
L5
2.9
L6
15.9
9
Dia
so
)
s
(
ct
L7
u
d
o
)
s
t(
b
O
-
3
o
r
P
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
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Doc ID 13845 Rev 2
13/16
Package mechanical data
STP20NM65N, STF20NM65N
Figure 22. TO-220FP drawing
L7
E
A
B
D
Dia
L5
L6
F1
F2
)
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L2
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L3
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Doc ID 13845 Rev 2
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7012510_Rev_K
STP20NM65N, STF20NM65N
5
Revision history
Revision history
Table 11.
Revision history
Date
Revision
Changes
12-Sep-2007
1
Initial release.
23-May-2011
2
Updated Chapter 4: Package mechanical data.
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STP20NM65N, STF20NM65N
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Please Read Carefully:
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Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
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Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
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)
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Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
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