STF21N90K5

STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5 N-channel 900 V, 0.25 Ω typ., 18.5 A Zener-protected SuperMESH™ 5 Power MOSFET in a D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet — production data Features Order codes TAB VDSS RDS(on)max ID PW 3 STB21N90K5 STF21N90K5 STP21N90K5 900 V < 0.299 Ω 2 TO-220FP TAB 250 W STW21N90K5 ■ 1 D2PAK 40 W 18.5 A 3 1 250 W TO-220 worldwide best RDS(on) 3 ■ Worldwide best FOM (figure of merit) ■ Ultra low gate charge ■ 100% avalanche tested ■ Zener-protected 1 2 2 3 1 TO-220 TO-247 Figure 1. Internal schematic diagram D(2, TAB) Applications ■ Switching applications Description G(1) These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency. Table 1. S(3) AM01476v1 Device summary Order codes Marking Package Packaging D2PAK Tape and reel STB21N90K5 STF21N90K5 TO-220FP 21N90K5 STP21N90K5 TO-220 STW21N90K5 TO-247 October 2012 This is information on a product in full production. Doc ID 16744 Rev 6 Tube 1/22 www.st.com 22 Contents STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 2/22 .............................................. 9 Doc ID 16744 Rev 6 STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol VGS ID ID Parameter Unit D2PAK, TO-220, TO-247 Gate- source voltage TO-220FP ± 30 Drain current (continuous) at TC = 25 °C 18.5 Drain current (continuous) at TC = 100 °C 11.6 V 18.5 (1) A 11.6 (1) A IDM (2) Drain current (pulsed) 74 74 (1) A PTOT Total dissipation at TC = 25 °C 250 40 W IAR Max current during repetitive or single pulse avalanche (pulse width limited by Tjmax ) EAS Single pulse avalanche energy (starting TJ = 25 °C, ID=IAR, VDD= 50 V) Viso Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) dv/dt (3) Tj Tstg 6 A 200 mJ 2500 Peak diode recovery voltage slope Operating junction temperature Storage temperature V 6 V/ns -55 to 150 °C 1. Limited by package. 2. Pulse width limited by safe operating area. 3. ISD ≤ 18.5 A, di/dt ≤ 100 A/µs, VDS(peak) ≤V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit D²PAK Rthj-case Thermal resistance junction-case max 0.5 Rthj-amb Thermal resistance junction-amb max Rthj-pcb Thermal resistance junction-pcb max Doc ID 16744 Rev 6 TO-220FP TO-220 TO-247 3.13 0.5 62.5 50 °C/W 30 3/22 Electrical characteristics 2 STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5 Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 4. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage (VGS= 0) ID = 1 mA IDSS Zero gate voltage drain current (VGS = 0) VDS = 900 V VDS = 900 V, Tc=125 °C 1 50 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ± 20 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 4 5 V RDS(on) Static drain-source on resistance VGS = 10 V, ID= 9 A 0.25 0.299 Ω Typ. Max. Unit V(BR)DSS Table 5. Symbol 900 3 V Dynamic Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Test conditions Min. 1645 VDS =100 V, f=1 MHz, VGS=0 - 112 pF - 2 Co(tr)(1) Equivalent capacitance time related Co(er)(2) Equivalent capacitance energy related RG Intrinsic gate resistance f = 1MHz open drain Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 720 V, ID = 18.5 A VGS =10 V (see Figure 20) pF pF - 133 - pF - 16 - pF - 4 - Ω - 43 12 25 - nC nC nC VGS = 0, VDS = 0 to 720 V 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/22 Doc ID 16744 Rev 6 STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5 Table 6. Switching times Symbol Parameter td(on) tr td(off) tf Table 7. Symbol ISD ISDM VSD(1) trr Qrr IRRM trr Qrr IRRM 1. Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Electrical characteristics Min. Typ. Max. Unit VDD = 720 V, ID = 10 A, RG=4.7 Ω, VGS=10 V (see Figure 22) - 17 27 52 40 - ns ns ns ns Test conditions Min. Typ. Max. Unit - 19 76 A A 1.5 V Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage ISD= 18.5 A, VGS=0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 18.5 A, VDD= 60 V di/dt = 100 A/µs, (see Figure 21) - 548 12 46 ns μC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 18.5 A,VDD= 60 V di/dt=100 A/µs, Tj=150 °C (see Figure 21) - 660 15 45 ns μC A Min. Typ. Max. Unit 30 - - V Pulsed: pulse duration = 300µs, duty cycle 1.5% Table 8. Symbol Gate-source Zener diode Parameter Test conditions V(BR)GSO Gate-source breakdown voltage IGS = ±1 mA, ID = 0 The built-in-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID 16744 Rev 6 5/22 Electrical characteristics STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 / D2PAK Thermal impedance for TO-220 / D2PAK Figure 5. Thermal impedance for TO-220FP Figure 7. Thermal impedance for TO-247 !-V O N /P ,IM ERA ITE TION D IN BY TH M IS AX AR 2 EA IS $3 )$ !  Figure 3. —S —S MS MS  4J # 4C # 3INGLE PULSE   Figure 4.    Safe operating area for TO-220FP !-V )$ !   6$36 IS EA AR 3ON $ TH 2 IN AX N M TIO Y RA B PE ED / IMIT , IS —S —S MS MS 4J # 4C #  3INGLE PULSE   Figure 6.    6$36 Safe operating area for TO-247 !-V )$ ! A ON $3  /P ,IM ERA ITE TION D IN BY TH M IS AX AR 2 E  IS —S —S MS MS  4J # 4C # 3INGLE PULSE   6/22    6$36 Doc ID 16744 Rev 6 STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5 Figure 8. Output characteristics Figure 9. !-V )$ !  Electrical characteristics 6'36 Transfer characteristics !-V )$!   6$36    6    6       6            6$36          6'36 Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance !-V 6'3 6 6$3 6$3 6 6$$6   )$! !-V 2$3ON /HM 6'36                       1GN#  Figure 12. Capacitance variations  #ISS          )$! Figure 13. Output capacitance stored energy !-V # P&  %OSS —* !-V        #OSS  #RSS      6$36        Doc ID 16744 Rev 6         6$36 7/22 Electrical characteristics STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5 Figure 14. Normalized gate threshold voltage vs temperature !-V 6'3TH NORM )$—! Figure 15. Normalized on-resistance vs temperature !-V 2$3ON NORM  )$! 6'36                  Figure 16. Source-drain diode forward characteristics     4* # Figure 17. Normalized BVDSS vs temperature !-V 63$ 6  4* #   4*  # !-V "6$33 NORM   )$M!   4* #      4* #           )3$!   Figure 18. Maximum avalanche energy vs starting Tj AM11194v1 EAS (mJ) ID=6 A VDD=50 V 200 180 160 140 120 100 80 60 40 20 0 0 8/22 20 40 60 80 100 120 140 TJ(°C) Doc ID 16744 Rev 6     4* # STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5 3 Test circuits Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 23. Unclamped inductive waveform AM01471v1 Figure 24. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 16744 Rev 6 10% AM01473v1 9/22 Package mechanical data 4 STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/22 Doc ID 16744 Rev 6 STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5 Table 9. Package mechanical data D²PAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 0.4 0° 8° Doc ID 16744 Rev 6 11/22 Package mechanical data STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5 Figure 25. D²PAK (TO-263) drawing 0079457_T Figure 26. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 a. All dimensions are in millimeters 12/22 Doc ID 16744 Rev 6 Footprint STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5 Table 10. Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Doc ID 16744 Rev 6 13/22 Package mechanical data STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5 Figure 27. TO-220FP drawing 7012510_Rev_K_B 14/22 Doc ID 16744 Rev 6 STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5 Table 11. Package mechanical data TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 16744 Rev 6 15/22 Package mechanical data STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5 Figure 28. TO-220 type A drawing 0015988_typeA_Rev_S 16/22 Doc ID 16744 Rev 6 STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5 Table 12. Package mechanical data TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 Doc ID 16744 Rev 6 5.70 17/22 Package mechanical data STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5 Figure 29. TO-247 drawing 0075325_G 18/22 Doc ID 16744 Rev 6 STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5 5 Packaging mechanical data Packaging mechanical data Table 13. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 Doc ID 16744 Rev 6 Min. Max. 330 13.2 26.4 30.4 19/22 Packaging mechanical data STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5 Figure 30. Tape for D²PAK (TO-263) and DPAK (TO-252) 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F W K0 B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 31. Reel for D²PAK (TO-263) and DPAK (TO-252) T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 20/22 Doc ID 16744 Rev 6 STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5 6 Revision history Revision history Table 14. Document revision history Date Revision 05-Nov-2009 1 First release. 18-Nov-2009 2 Updated description on cover page 12-Jan-2010 3 Corrected VGS value in Table 2: Absolute maximum ratings 14-Jul-2010 4 Document status promoted from preliminary data to datasheet. 5 – Inserted device in D2PAK. – Updated Figure 2: Safe operating area for TO-220 / D2PAK, Figure 4: Safe operating area for TO-220FP and Figure 6: Safe operating area for TO-247. – Inserted Section 5: Packaging mechanical data on page 19. – Minor text changes. 6 – – – – – 21-Dec-2011 12-Oct-2012 Changes Updated: Qg value (test conditions) in Table 5 Updated: Td(on) value (test conditions) in Table 6 Updated: values (test conditions) in Table 8 Updated: Figure 10 Updated: Section 4: Package mechanical data Doc ID 16744 Rev 6 21/22 STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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