STP/F21NM50N - STW21NM50N
STB21NM50N - STB21NM50N-1
N-channel 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247
Second generation MDmesh™ Power MOSFET
General features
VDSS
Type
(@Tjmax)
STB21NM50N
STB21NM50N-1
STF21NM50N
STP21NM50N
STW21NM50N
550V
550V
550V
550V
550V
ID
RDS(on)
3
3
< 0.19Ω
< 0.19Ω
< 0.19Ω
< 0.19Ω
< 0.19Ω
1
18A
18A
18A(1)
18A
18A
1
TO-220
■
Low input capacitance and gate charge
■
Low gate input resistance
D2PAK
u
d
o
r
P
e
3
12
100% avalanche tested
)
s
(
ct
2
TO-220FP
1. Limited by wire bonding
■
1
3
2
let
I2PAK
o
s
b
TO-247
Internal schematic diagram
O
)
Description
The devices are realized with the second
generation of MDmesh Technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters
s
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Applications
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■
Switching application
Order codes
Part number
STB21NM50N
Marking
Package
B21NM50N
Packaging
2PAK
Tape & reel
2PAK
Tube
D
STB21NM50N-1
B21NM50N
STF21NM50N
F21NM50N
TO-220FP
Tube
STP21NM50N
P21NM50N
TO-220
Tube
STW21NM50N
W21NM50N
TO-247
Tube
January 2007
I
Rev 6
1/18
www.st.com
18
Contents
STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuit
................................................ 9
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
)
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STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
1
Electrical ratings
Electrical ratings
Table 1.
Absolute maximum ratings
Value
Symbol
Parameter
Unit
TO-220/ D2PAK/
I2PAK/TO-247
VDS
Drain-source voltage (VGS = 0)
500
VGS
Gate- source voltage
±25
TO-220FP
V
V
ID
Drain current (continuous) at TC = 25°C
18
18
ID
Drain current (continuous) at TC = 100°C
11
11(1)
IDM
(2)
PTOT
dv/dt(3)
72
Total dissipation at TC = 25°C
140
Derating factor
1.12
ete
l
o
s
Viso
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1s;TC=25°C)
Tstg
Storage temperature
)
(s
b
O
Max. operating junction temperature
Tj
ct
du
72(1)
Drain current (pulsed)
Peak diode recovery voltage slope
(s)
(1)
o
r
P
A
A
A
30
W
0.23
W/°C
15
V/ns
--
2500
–55 to 150
150
V
°C
1. Limited only by maximum temperature allowed
t
c
u
2. Pulse width limited by safe operating area
ISD ≤18 A, di/dt ≤400 A/µs, VDD =80% V(BR)DSS
3.
Table 2.
P
e
d
o
r
t
e
l
o
Symbol
s
b
O
Thermal data
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Tl
Table 3.
Maximum lead temperature for soldering
purpose
TO-220/D²PAK/
I²PAK / TO-247
TO-220FP
Unit
0.89
4.21
°C/W
62.5
°C/W
300
°C
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
9
A
EAS
Single pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 50V)
480
mJ
3/18
Electrical characteristics
2
STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
On/off states
Value
Symbol
Parameter
Test conditions
Unit
Min.
Drain-source
breakdown voltage
ID = 1mA, VGS = 0
Drain source voltage slope
VDD=400V, ID=25A,
VGS=10V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating,TC@125°C
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250µA
RDS(on
Static drain-source on
resistance
VGS = 10V, ID = 9A
V(BR)DSS
dv/dt(1)
b
O
1. Characteristic value at turn off on inductive load
Table 5.
ct
Symbol
gfs
(1)
Parameter
du
Forward transconductance
ro
V
)
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t
44
uc
d
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Test conditions
VDS = 15V, ID = 9A
V/ns
2
3
1
10
µA
µA
100
nA
4
V
Ω
0.150 0.190
Min.
Typ.
12
Max.
Unit
S
pF
pF
pF
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1 MHz,
VGS = 0
1950
420
60
Coss eq.(2)
Equivalent output
capacitance
VGS = 0V, VDS = 0V to 400V
270
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD =250V, ID = 9A
RG = 4.7Ω VGS = 10V
(see Figure 15.)
22
18
90
30
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 400V, ID = 18A,
VGS = 10V,
(see Figure 16.)
65
10
30
nC
nC
nC
Gate input resistance
f=1MHz Gate DC Bias=0
test signal level=20mV
open drain
1.6
Ω
Ciss
Coss
Crss
P
e
t
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s
b
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)
(s
Dynamic
Max.
500
let
so
Typ.
Rg
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/18
STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
Table 6.
Electrical characteristics
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
ISD = 18A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 18A,
di/dt=100A/µs
VDD = 100V,
(see Figure 17.)
360
5
27
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 18A,
di/dt=100A/µs
VDD = 100V, Tj = 150°C
(see Figure 17.)
464
6.5
27
trr
Qrr
IRRM
trr
Qrr
IRRM
Max.
Unit
18
72
A
A
1.5
V
ns
µC
A
t
c
u
(s)
ns
µC
A
d
o
r
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
P
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5/18
Electrical characteristics
STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
)
s
(
ct
Figure 3.
Safe operating area for TO-220FP
Figure 4.
u
d
o
r
P
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Thermal impedance for TO-220FP
t
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)
(s
s
b
O
t
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u
d
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s
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6/18
P
e
let
Figure 5.
Output characteristics
Figure 6.
Transfer characteristics
STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
Figure 7.
Figure 9.
Transconductance
Figure 8.
Electrical characteristics
Static drain-source on resistance
)
s
(
ct
u
d
o
Gate charge vs gate-source voltage Figure 10. Capacitance variations
r
P
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)
(s
s
b
O
t
c
u
d
o
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P
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Figure 11. Normalized gate threshold voltage
vs temperature
t
e
l
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Figure 12. Normalized on resistance vs
temperature
s
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7/18
Electrical characteristics
STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
Figure 13. Source-drain diode forward
characteristics
Figure 14. Normalized BVdss vs temperature
)
s
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ct
u
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8/18
s
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STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
3
Test circuit
Test circuit
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
)
s
(
ct
u
d
o
r
P
e
Figure 17. Test circuit for inductive load
Figure 18. Unclamped Inductive load test
switching and diode recovery times
circuit
t
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)
(s
s
b
O
t
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u
d
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t
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Figure 19. Unclamped inductive waveform
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Figure 20. Switching time waveform
9/18
Package mechanical data
4
STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
)
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10/18
s
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STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
Package mechanical data
TO-220 MECHANICAL DATA
mm.
DIM.
MIN.
inch
TYP
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
c
0.49
0.70
0.019
D
15.25
15.75
0.60
E
10
10.40
0.393
e
2.40
2.70
0.094
e1
4.95
5.15
0.194
F
1.23
1.32
0.048
H1
6.20
6.60
0.244
J1
2.40
2.72
0.094
0.511
L
13
14
L1
3.50
3.93
L20
e
t
e
l
16.40
L30
o
s
b
28.90
øP
3.75
Q
2.65
3.85
2.95
0.137
0.066
)
s
(
ct
0.027
0.620
0.409
du
o
r
P
0.106
0.202
0.052
0.256
0.107
0.551
0.154
0.645
1.137
0.147
0.151
0.104
0.116
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11/18
Package mechanical data
STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
TO-220FP MECHANICAL DATA
mm.
DIM.
MIN.
A
4.4
inch
TYP
MIN.
4.6
0.173
0.181
0.106
B
2.5
2.7
0.098
D
2.5
2.75
0.098
E
0.45
0.7
0.017
F
0.75
1
0.030
F1
1.15
1.7
0.045
F2
1.15
1.7
0.045
G
4.95
5.2
0.195
G1
2.4
2.7
0.094
H
10
10.4
0.393
L2
28.6
30.6
L4
9.8
10.6
2.9
L6
15.9
L7
9
Ø
3
0.067
u
d
o
0.067
0.204
0.106
0.409
o
s
b
3.6
O
)
1.126
1.204
.0385
0.417
0.114
0.141
0.626
0.645
9.3
0.354
0.366
3.2
0.118
0.126
E
D
A
)
s
(
ct
0.039
let
16.4
s
(
t
c
L3
L6
t
e
l
o
F2
H
G
G1
F
F1
L7
L2
12/18
0.108
0.027
B
r
P
e
MAX.
0.630
L3
L5
TYP.
r
P
e
16
u
d
o
s
b
O
MAX.
L5
1 2 3
L4
STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
Package mechanical data
TO-262 (I2PAK) MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
A1
2.40
2.72
0.094
0.107
b
0.61
0.88
0.024
0.034
b1
1.14
1.70
0.044
0.066
c
0.49
0.70
0.019
0.027
c2
1.23
1.32
0.048
D
8.95
9.35
0.352
e
2.40
2.70
0.094
e1
4.95
5.15
0.194
E
10
10.40
0.393
0.511
L
13
14
L1
3.50
3.93
L2
1.27
1.40
)
(s
ete
0.137
s
b
O
ol
0.050
0.181
)
s
(
ct
0.052
0.368
Pr
u
d
o
0.106
0.202
0.410
0.551
0.154
0.055
t
c
u
d
o
r
P
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t
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s
b
O
13/18
Package mechanical data
STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
D2PAK MECHANICAL DATA
TO-247 MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
B
0.7
0.93
0.027
B2
1.14
1.7
0.044
C
0.45
0.6
0.017
C2
1.23
1.36
0.048
D
8.95
9.35
0.352
D1
10
t
e
l
o
8.5
G
4.88
L
15
L2
1.27
L3
1.4
M
2.4
R
5.28
t(s
c
u
d
V2
0º
s
b
O
15.85
)-
)
s
(
ct
0.067
u
d
o
0.023
0.053
0.368
0.315
10.4
E1
0.009
0.036
r
P
e
8
E
e
t
e
ol
MAX.
0.393
0.334
0.192
0.208
0.590
0.625
1.4
0.050
0.055
1.75
0.055
0.068
3.2
0.094
0.4
0.126
0.015
4º
o
r
P
3
s
b
O
1
14/18
STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
Package mechanical data
TO-247 MECHANICAL DATA
mm.
DIM.
MIN.
inch
TYP
MAX.
MIN.
TYP.
MAX.
A
4.85
5.15
0.19
0.20
A1
2.20
2.60
0.086
0.102
b
1.0
1.40
0.039
b1
2.0
2.40
0.079
b2
3.0
3.40
0.118
c
0.40
0.80
0.015
D
19.85
20.15
0.781
E
15.45
15.75
0.608
e
5.45
L
14.20
14.80
0.560
3.70
4.30
0.14
e
t
e
ol
18.50
øP
3.55
3.65
øR
4.50
5.50
S
)
s
(
ct
0.134
0.03
u
d
o
0.793
0.620
0.214
L1
L2
0.055
0.094
bs
5.50
Pr
0.582
0.17
0.728
0.140
0.143
0.177
0.216
0.216
O
)
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Packing mechanical data
5
STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
Packing mechanical data
D2PAK FOOTPRINT
)
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TAPE AND REEL SHIPMENT
t
e
l
o
)-
s
(
t
c
du
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P
TAPE MECHANICAL DATA
e
t
e
l
DIM.
so
b
O
mm
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
MAX.
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
* on sales type
16/18
inch
0.933 0.956
s
b
O
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
26.4
0.960 1.039
0.059
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
6
Revision history
Revision history
Table 7.
Revision history
Date
Revision
Changes
29-Sep-2005
1
First release
05-Oct-2005
2
Symbol changed on Dynamic
19-Oct-2005
3
Changed Figure 8: Static drain-source on resistance
29-Nov-2005
4
Modified Figure 5: Output characteristics
20-Nov-2006
5
Modified Figure 8: Static drain-source on resistance
19-Jan-2007
6
Typo mistake on Table 5.
)
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17/18
STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
)
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ct
Please Read Carefully:
u
d
o
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
r
P
e
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