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STF24NM65N

STF24NM65N

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOT78

  • 描述:

    MOSFET N-CH 650V 19A TO-220FP

  • 数据手册
  • 价格&库存
STF24NM65N 数据手册
STW24NM65N-STI24NM65N-STF24NM65N STB24NM65N - STP24NM65N N-channel 650 V - 0.16 Ω - 19 A - TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh™ Power MOSFET Features Type VDSS (@TJmax) RDS(on) max ID STB24NM65N 710 V < 0.19 Ω 19 A STI24NM65N 710 V < 0.19 Ω 19 A STF24NM65N 710 V < 0.19 Ω 19 A(1) STP24NM65N 710 V < 0.19 Ω 19 A STW24NM65N 710 V < 0.19 Ω 19 A 3 12 3 1 2 I²PAK TO-220 3 1 D²PAK 3 1. Limited only by maximum temperature allowed 1 2 TO-220FP ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Figure 1. 2 3 1 TO-247 Internal schematic diagram Application ■ Switching applications Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes Marking Package Packaging STB24NM65N 24NM65N D²PAK Tape and reel STI24NM65N 24NM65N I²PAK Tube STF24NM65N 24NM65N TO-220FP Tube STP24NM65N 24NM65N TO-220 Tube STW24NM65N 24NM65N TO-247 Tube February 2008 Rev 1 1/19 www.st.com 19 Contents STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/19 ................................................ 9 STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter TO-220/I²PAK TO-247/D²PAK Unit TO-220FP VDS Drain-source voltage (VGS=0) 650 V VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 19 19(1) A ID Drain current (continuous) at TC = 100 °C 12 12 (1) A IDM (2) Drain current (pulsed) 76 76(1) A PTOT Total dissipation at TC = 25 °C 160 40 W dv/dt (3) Peak diode recovery voltage slope 15 VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Tstg Storage temperature TJ -- Max. operating junction temperature V/ns 2500 V -55 to 150 °C 150 °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤19 A, di/dt ≤400 A/µs, VDD = 80% V(BR)DSS Table 3. Thermal data Symbol Parameter Rthj-case Thermal resistance junctioncase max Rthj-amb Thermal resistance junctionamb max Rthj-pcb Thermal resistance junctionpcb max Tl Maximum lead temperature for soldering purposes TO-220 I²PAK TO-247 D²PAK TO-220FP 0.78 62.5 -- -- Unit 3.1 °C/W 50 -- 62.5 °C/W -- 30 -- °C/W 300 °C 3/19 Electrical ratings Table 4. 4/19 STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N Avalanche characteristics Symbol Parameter Max value Unit IAS Avalanche current, repetitive or not-repetitive (pulse width limited by TJ max) 6 A EAS Single pulse avalanche energy (starting TJ=25 °C, ID=IAS, VDD= 50 V) 500 mJ STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N 2 Electrical characteristics Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 dv/dt (1) Drain source voltage slope VDD= 520 V, ID=19 A, VGS=10 V IDSS Zero gate voltage drain current (VGS = 0) VDS = max rating VDS = max rating, @125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 9.5 A 0.16 0.19 Ω Typ. Max. Unit 650 V 35 2 V/ns 1. Characteristic value at turn off on inductive load Table 6. Symbol Dynamic Parameter gfs (1) Forward transconductance Ciss Coss Crss Test conditions Min. VDS= 15 V, ID = 9.5 A 14 Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 2500 120 10 Equivalent output capacitance VGS = 0, VDS = 0 to 520 V 310 pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 520 V, ID = 19 A, VGS = 10 V, (see Figure 19) 70 10 40 nC nC nC RG Gate input resistance f=1 MHz gate DC bias = 0 Test signal level = 20 mV open drain 2.5 Ω Coss eq(2) S pF pF pF 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 5/19 Electrical characteristics Table 7. Symbol td(on) tr td(off) tf Table 8. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Typ Max 25 10 80 20 VDD =325 V, ID = 9.5 A RG = 4.7 Ω VGS = 10 V (see Figure 18) Unit ns ns ns ns Source drain diode Parameter Test conditions Min Typ Source-drain current Source-drain current (pulsed) Max Unit 19 76 A A 1.3 V Forward on voltage ISD = 19 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 19 A, di/dt = 100 A/µs VDD = 100 V (see Figure 20) 460 7 30 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 19 A, di/dt = 100 A/µs VDD = 100 V, TJ = 150 °C (see Figure 20) 620 9 29 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 6/19 Min STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 D2PAK - I2PAK Figure 3. Thermal impedance for TO-220 D2PAK - I2PAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 7/19 Electrical characteristics Figure 8. Output characteristics Figure 10. Transconductance STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N Figure 9. Transfer characteristics Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations 8/19 STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature 9/19 Test circuit 3 STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N Test circuit Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit Figure 20. Test circuit for inductive load Figure 21. Unclamped Inductive load test switching and diode recovery times circuit Figure 22. Unclamped inductive waveform 10/19 Figure 23. Switching time waveform STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/19 Package mechanical data STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 12/19 Typ 4.40 0.61 1.14 0.49 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N Package mechanical data TO-220FP mechanical data mm. DIM. Min. inch Typ. Max. Min. Typ. Max. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 L5 1 23 L4 13/19 Package mechanical data STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N TO-262 mechanical data mm inch Dim Min A A1 b b1 c c2 D e e1 E L L1 L2 14/19 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 Typ Max Min 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 Typ Max 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N Package mechanical data D²PAK (TO-263) mechanical data mm inch Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 Typ 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 Max Min 4.60 0.23 0.93 1.70 0.60 1.36 9.35 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 10.40 2.54 4.88 15 2.49 2.29 1.27 1.30 Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 8° 0° 0.4 0° Typ 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8° 0079457_M 15/19 Package mechanical data STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N TO-247 Mechanical data mm. Dim. A Min. 4.85 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e Max. 5.15 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 øP 3.55 3.65 øR 4.50 5.50 S 16/19 Typ 5.50 STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N 5 Packaging mechanical data Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm MIN. inch MAX. MIN. inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 17/19 Revision history 6 STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N Revision history Table 9. 18/19 Document revision history Date Revision 14-Feb-2008 1 Changes First release STB24NM65N-STI24NM65N-STF24NM65N-STP/W24NM65N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 19/19
STF24NM65N 价格&库存

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