STF25N60M2-EP

STF25N60M2-EP N-channel 600 V, 0.175 Ω typ., 18 A MDmesh™ M2 EP Power MOSFET in a TO-220FP package Datasheet - production data Features 1 2 Order code VDS @ TJmax RDS(on) max. ID STF25N60M2-EP 650 V 0.188 Ω 18 A • • • • • 3 TO-220FP Extremely low gate charge Excellent output capacitance (COSS) profile Very low turn-off switching losses 100% avalanche tested Zener-protected Applications Figure 1: Internal schematic diagram • • Switching applications Tailored for Very High Frequency Converters (f > 150 kHz) Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 EP enhanced performance technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters. Table 1: Device summary Order code Marking Package Packaging STF25N60M2-EP 25N60M2EP TO-220FP Tube January 2015 DocID027251 Rev 2 This is information on a product in full production. 1/14 www.st.com Contents STF25N60M2-EP Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package mechanical data ............................................................. 10 4.1 5 2/14 TO-220FP package information ...................................................... 11 Revision history ............................................................................ 13 DocID027251 Rev 2 STF25N60M2-EP 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol VGS ID Parameter Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C (2) IDM Drain current (pulsed) PTOT Value Unit ± 25 V (1) A 18 11.3 72 (1) (1) A A Total dissipation at TC = 25 °C 30 W dv/dt (3) Peak diode recovery voltage slope 15 V/ns dv/dt (4) MOSFET dv/dt ruggedness 50 V/ns 2500 V - 55 to 150 °C Value Unit VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s, TC = 25 °C) Tstg Storage temperature Tj Max. operating junction temperature Notes: (1) (2) Limited Limited by maximum junction temperature. Pulse width limited by safe operating area. (3) ISD ≤ 18 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V. (4) VDS ≤ 480 V Table 3: Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max 4.2 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Value Unit Table 4: Avalanche characteristics Symbol Parameter IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 3.5 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR; VDD = 50 V) 200 mJ DocID027251 Rev 2 3/14 Electrical characteristics 2 STF25N60M2-EP Electrical characteristics TC = 25 °C unless otherwise specified Table 5: On/off states Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage IDSS Zero gate voltage Drain current IGSS Min. VGS = 0 V, ID = 1 mA Typ. Max. 600 Unit V VGS = 0 V, VDS = 600 V 1 µA VGS = 0 V, VDS = 600 V, TC = 125 °C 100 µA Gate-body leakage current VDS = 0 V, VGS = ±25 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 V RDS(on) Static drain-source onresistance VGS = 10 V, ID = 9 A 0.175 0.188 Ω Min. Typ. Max. Unit - 1090 - pF - 56 - pF - 1.6 - pF 2 Table 6: Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Test conditions VDS= 100 V, f = 1 MHz, VGS = 0 V Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 255 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 7 - Ω Qg Total gate charge - 29 - nC Qgs Gate-source charge - 6 - nC Qgd Gate-drain charge - 12 - nC Coss eq. (1) VDD = 480 V, ID = 18 A, VGS = 10 V (see Figure 16: "Gate charge test circuit") Notes: (1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 7: Switching Energy Symbol E(off) 4/14 Parameter Test conditions Turn-off energy (from 90% VGS to 0% ID) Min. Typ. Max. Unit VDD = 400 V, ID = 2 A RG = 4.7 Ω, VGS = 10 V - 7 - µJ VDD = 400 V, ID = 4 A RG = 4.7 Ω, VGS = 10 V - 8 - µJ DocID027251 Rev 2 STF25N60M2-EP Electrical characteristics Table 8: Switching times Symbol td(on) tr Parameter Turn-on delay time Rise time td(off) tf Turn-off-delay time Fall time Test conditions Min. Typ. Max. Unit VDD = 300 V, ID = 9 A RG = 4.7 Ω, VGS = 10 V (see Figure 15: "Switching times test circuit for resistive load" and Figure 20: "Switching time waveform") - 15 - ns - 10 - ns - 61 - ns - 16 - ns Min. Typ. Max. Unit Table 9: Source drain diode Symbol ISD Parameter Test conditions Source-drain current - 18 A (1) Source-drain current (pulsed) - 72 A (2) Forward on voltage VGS = 0 V, ISD = 18 A - 1.6 V trr Reverse recovery time - 360 ns Qrr Reverse recovery charge - 5 µC IRRM Reverse recovery current ISD = 18 A, di/dt = 100 A/µs, VDD = 100 V (see Figure 17: " Test circuit for inductive load switching and diode recovery times") - 28 A - 445 ns - 6.5 µC - 29 A ISDM VSD trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 18 A, di/dt = 100 A/µs, VDD = 100 V, Tj = 150 °C (see Figure 17: " Test circuit for inductive load switching and diode recovery times") Notes: (1) (2) Pulse width is limited by safe operating area Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID027251 Rev 2 5/14 Electrical characteristics 2.2 STF25N60M2-EP Electrical characteristics (curves) Figure 3: Thermal impedance Figure 2: Safe operating area ID (A) n) D S( o O p lim era ite tion d by in t m his ax a R rea GIPG021220141118ALS 10µs 100µs 1ms is 10 10ms 1 Tj=150°C TC=25°C Single pulse 0.1 0.1 10 1 VDS(V) 100 Figure 5: Transfer characteristics Figure 4: Output characteristics ID(A) ID(A) 40 40 35 VGS = 6,7,8,9,10 V 30 VGS = 5 V 25 25 20 20 15 15 10 10 VGS = 4 V 5 5 0 0 8 4 16 12 VGS (V) 12 GIPG011220140958ALS VDS 10 0 VDS(V) Figure 6: Gate charge vs gate-source voltage 6/14 VDS = 16 V 35 30 VDS (V) 600 RDS(on) (Ω) 6 300 0.177 4 200 0.174 2 100 0.171 0 30 Qg(nC) 0.168 10 15 20 25 VGS(V) DocID027251 Rev 2 GIPG011220141210ALS 0.183 0.180 5 8 0.186 400 0 6 4 Figure 7: Static drain-source on-resistance 500 VDD = 480 V 2 0 8 0 GIPG281120141611ALS GIPG011220141438ALS VGS = 10 V 0 4 8 12 16 ID(A) STF25N60M2-EP Electrical characteristics Figure 9: Output capacitance stored energy Figure 8: Capacitance variations C (pF) GIPG181120141549ALS 1000 CISS EOSS (μJ) GIPG181120141603ALS 8 6 100 4 COSS 10 2 CRSS 1 1 0.1 100 10 Figure 10: Turn-off switching loss vs drain current EOSS (μJ) 0 VDS(V) 0 100 200 300 400 500 600 VDS(V) Figure 11: Normalized gate threshold voltage vs temperature GIPG261120141106ALS VGS(th) (norm) GIPG181120141615ALS 1.1 ID = 250 µA 12 1.0 10 0.9 8 0.8 6 0.7 4 0 1 2 3 4 5 6 ID(A) Figure 12: Normalized on-resistance vs temperature RDS(on) (norm) GIPG181120141628ALS 0.6 -75 -25 25 75 TJ(°C) Figure 13: Source-drain diode forward characteristics VSD (V) GIPG191120141427ALS TJ=-50°C 1.1 2.2 125 1.0 1.8 VGS = 10 V 0.9 TJ=-50°C 1.4 0.8 1.0 TJ=-50°C 0.7 0.6 0.6 0.2 -75 -25 25 75 125 TJ(°C) DocID027251 Rev 2 0 0 4 8 12 16 ISD(A) 7/14 Electrical characteristics STF25N60M2-EP Figure 14: Normalized V(BR)DSS vs temperature V(BR)DSS GIPG191120141457ALS (norm) 1.08 1.04 1.00 ID = 1mA 0.96 0.92 0.88 -75 8/14 -25 25 DocID027251 Rev 2 75 125 TJ(°C) STF25N60M2-EP 3 Test circuits Test circuits Figure 15: Switching times test circuit for resistive load Figure 16: Gate charge test circuit VDD 47 k Ω 12 V 1 kΩ 100 nF I G = CONST Vi ≤ V GS 100 Ω D.U.T. 2.7 k Ω 2200 μ F VG 47 k Ω PW 1 kΩ AM01469v 1 Figure 17: Test circuit for inductive load switching and diode recovery times Figure 18: Unclamped inductive load test circuit Figure 19: Unclamped inductive waveform Figure 20: Switching time waveform t on V(BR)DSS t d(on) toff tr t d(off) tf VD 90% 90% I DM 10% 0 ID VDD 10% VDD AM01472v 1 DocID027251 Rev 2 VGS 0 10% VDS 90% AM01473v 1 9/14 Package mechanical data 4 STF25N60M2-EP Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK is an ST trademark. 10/14 DocID027251 Rev 2 STF25N60M2-EP 4.1 Package mechanical data TO-220FP package information Figure 21: TO-220FP package outline 7012510_Rev_K_B DocID027251 Rev 2 11/14 Package mechanical data STF25N60M2-EP Table 10: TO-220FP mechanical data mm Dim. Min. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 12/14 Typ. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID027251 Rev 2 STF25N60M2-EP 5 Revision history Revision history Table 11: Document revision history Date Revision Changes 02-Dec-2014 1 First release. 12-Jan-2015 2 Updated product status from “preliminary data” to “production data”. 14-Jan-2015 3 Corrected product status information on cover page. DocID027251 Rev 2 13/14 STF25N60M2-EP IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 14/14 DocID027251 Rev 2