STF26N60M2, STFI26N60M2
N-channel 600 V, 0.14 Ω typ., 20 A MDmesh™ M2
Power MOSFETs in TO-220FP and I²PAKFP packages
Datasheet - production data
Features
Order code
1
2
RDS(on)
max.
ID
PTOT
650 V
0.165 Ω
20 A
30
W
STF26N60M2
3
TO-220FP
VDS @
TJmax
1
2 3
STFI26N60M2
I2PAKFP (TO-281)
Figure 1: Internal schematic diagram
D(2)
•
•
•
•
Extremely low gate charge
Excellent output capacitance (COSS) profile
100% avalanche tested
Zener-protected
Applications
•
•
Switching applications
LCC converters, resonant converters
G(1)
Description
S(3)
AM15572v1_no_tab
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, these devices exhibit low on-resistance
and optimized switching characteristics,
rendering them suitable for the most demanding
high efficiency converters.
Table 1: Device summary
Order code
STF26N60M2
STFI26N60M2
July 2015
Marking
26N60M2
DocID027600 Rev 2
This is information on a product in full production.
Package
TO-220FP
I²PAKFP
Packing
Tube
1/15
www.st.com
Contents
STF26N60M2, STFI26N60M2
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3
Test circuits ..................................................................................... 8
4
Package information ....................................................................... 9
5
2/15
4.1
TO-220FP package information ...................................................... 10
4.2
I²PAKFP (TO-281) package information ......................................... 12
Revision history ............................................................................ 14
DocID027600 Rev 2
STF26N60M2, STFI26N60M2
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
VGS
(1)
ID
(2)
IDM
PTOT
Parameter
Value
Unit
Gate-source voltage
±25
V
Drain current (continuous) at Tcase = 25 °C
20
Drain current (continuous) at Tcase = 100 °C
13
Drain current (pulsed)
80
A
W
A
Total dissipation at Tcase = 25 °C
30
dv/dt
(3)
Peak diode recovery voltage slope
15
dv/dt
(4)
MOSFET dv/dt ruggedness
50
VISO
Insulation withstand voltage (RMS) from all three leads to
external heat sink (t = 1 s; TC = 25 °C)
2.5
kV
Tstg
Storage temperature
-55 to 150
°C
Value
Unit
Tj
Operating junction temperature
V/ns
Notes:
(1)
(2)
Limited by maximum junction temperature.
Pulse width is limited by safe operating area.
(3)
ISD ≤ 20 A, di/dt=400 A/μs; VDS(peak) < V(BR)DSS, VDD = 80% V(BR)DSS.
(4)
VDS ≤ 480 V.
Table 3: Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
4.2
Rthj-amb
Thermal resistance junction-ambient
62.5
°C/W
Table 4: Avalanche characteristics
Symbol
(1)
IAR
(2)
EAR
Parameter
Value
Unit
Avalanche current, repetitive or not repetitive
3.8
A
Single pulse avalanche energy
250
mJ
Notes:
(1)
(2)
Pulse width limited by Tjmax.
starting Tj = 25 °C, ID = IAR, VDD = 50 V.
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Electrical characteristics
2
STF26N60M2, STFI26N60M2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5: Static
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
Min.
Typ.
Max.
600
Unit
V
VGS = 0 V, VDS = 600 V
1
VGS = 0 V, VDS = 600 V,
Tcase = 125 °C
100
±10
µA
3
4
V
0.14
0.165
Ω
Min.
Typ.
Max.
Unit
-
1360
-
-
88
-
-
2
-
IDSS
Zero gate voltage drain
current
IGSS
Gate-body leakage
current
VDS = 0 V, VGS = ±25 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source onresistance
VGS = 10 V, ID = 10 A
2
µA
Table 6: Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Test conditions
VDS = 100 V, f = 1 MHz,
VGS = 0 V
pF
Equivalent output
capacitance
VDS = 0 to 480 V, VGS = 0 V
-
124
-
pF
RG
Intrinsic gate resistance
f = 1 MHz, ID = 0 A
-
4
-
Ω
Qg
Total gate charge
-
34
-
Qgs
Gate-source charge
-
5.6
-
Qgd
Gate-drain charge
VDD = 480 V, ID = 20 A,
VGS = 10 V (see Figure 15:
"Gate charge test circuit")
-
16.3
-
Coss eq.
(1)
nC
Notes:
(1)
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
Table 7: Switching times
Symbol
td(on)
tr
td(off)
tf
4/15
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
Min.
Typ.
Max.
VDD = 300 V, ID = 10 A
RG = 4.7 Ω, VGS = 10 V (see
Figure 14: "Switching times
test circuit for resistive load"
and Figure 19: "Switching time
waveform")
-
20.2
-
DocID027600 Rev 2
-
8
-
-
66
-
-
10
-
Unit
ns
STF26N60M2, STFI26N60M2
Electrical characteristics
Table 8: Source-drain diode
Symbol
ISD
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Source-drain current
-
20
A
(1)
Source-drain current
(pulsed)
-
80
A
(2)
Forward on voltage
VGS = 0 V, ISD = 20 A
-
1.6
V
trr
Reverse recovery time
-
360
ns
Qrr
Reverse recovery charge
-
5
µC
IRRM
Reverse recovery current
ISD = 20 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 16:
"Test circuit for inductive load
switching and diode recovery
times")
-
27
A
-
556
ns
-
8
µC
-
29
A
ISDM
VSD
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 20 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C (see
Figure 16: "Test circuit for
inductive load switching and
diode recovery times")
Notes:
(1)
(2)
Pulse width is limited by safe operating area.
Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
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Electrical characteristics
2.1
6/15
STF26N60M2, STFI26N60M2
Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage
Figure 7: Static drain-source on-resistance
DocID027600 Rev 2
STF26N60M2, STFI26N60M2
Electrical characteristics
Figure 8: Capacitance variations
Figure 9: Normalized gate threshold voltage
vs temperature
Figure 10: Normalized on-resistance vs
temperature
Figure 11: Normalized V(BR)DSS vs
temperature
Figure 12: Output capacitance stored energy
Figure 13: Source-drain diode forward
characteristics
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Test circuits
3
STF26N60M2, STFI26N60M2
Test circuits
Figure 14: Switching times test circuit for resistive
load
Figure 15: Gate charge test circuit
Figure 16: Test circuit for inductive load switching
and diode recovery times
Figure 17: Unclamped inductive load test circuit
Figure 18: Unclamped inductive waveform
Figure 19: Switching time waveform
8/15
DocID027600 Rev 2
STF26N60M2, STFI26N60M2
4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
®
ECOPACK is an ST trademark.
DocID027600 Rev 2
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Package information
4.1
STF26N60M2, STFI26N60M2
TO-220FP package information
Figure 20: TO-220FP package outline
7012510_Rev_K_B
10/15
DocID027600 Rev 2
STF26N60M2, STFI26N60M2
Package information
Table 9: TO-220FP package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
DocID027600 Rev 2
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Package information
4.2
STF26N60M2, STFI26N60M2
I²PAKFP (TO-281) package information
Figure 21: I²PAKFP (TO-281) package outline
8291506 Re v. C
12/15
DocID027600 Rev 2
STF26N60M2, STFI26N60M2
Package information
Table 10: I²PAKFP (TO-281) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
-
4.60
B
2.50
2.70
D
2.50
2.75
D1
0.65
0.85
E
0.45
0.70
F
0.75
1.00
F1
1.20
G
4.95
5.20
H
10.00
10.40
L1
21.00
23.00
L2
13.20
14.10
L3
10.55
10.85
L4
2.70
3.20
L5
0.85
L6
7.50
DocID027600 Rev 2
1.25
7.60
7.70
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Revision history
5
STF26N60M2, STFI26N60M2
Revision history
Table 11: Document revision history
Date
Revision
05-Mar-2015
1
First release.
2
Text and formatting changes throughout document
Datasheet promoted from preliminary data to production data
In Section Electrical characteristics:
- updated and renamed table Static (was On/off states)
- updated table Dynamic, Switching times and Source-drain diode
- added section Electrical characteristics (curves)
30-July-2015
14/15
Changes
DocID027600 Rev 2
STF26N60M2, STFI26N60M2
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