STF26NM60N-H

STF26NM60N-H N-channel 600 V, 0.135 Ω, 20 A MDmesh™ II Power MOSFET in TO-220FP Features Type VDSS RDS(on) max ID STF26NM60N-H 600 V < 0.165 Ω 20 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ 3 1 Low gate input resistance TO-220FP Application ■ 2 Switching applications Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram $ ' 3 3# Table 1. Device summary Order codes Marking Package Packaging STF26NM60N-H(1) 26NM60N TO-220FP Tube 1. The device meets ECOPACK® standards, an environmentally-friendly grade of products commonly referred to as “halogen-free” . See Section 4: Package mechanical data. January 2010 Doc ID 16964 Rev 1 1/12 www.st.com 12 Contents STF26NM60N-H Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 .............................................. 8 Doc ID 16964 Rev 1 STF26NM60N-H 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 600 V VGS Gate-source voltage ± 25 V (1) A ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (2) PTOT Drain current (pulsed) 80 Total dissipation at TC = 25 °C 30 A A W 0.24 Peak diode recovery voltage slope VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Tstg Storage temperature Tj 12.6 (1) (1) Derating factor dv/dt (3) 20 Max. operating junction temperature V/ns 2500 V –55 to 150 °C 150 °C Value Unit 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 20 A, di/dt ≤ 400 A/µs, VDD ≤ 80% V(BR)DSS Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max 4.17 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Maximum lead temperature for soldering purpose 300 °C Value Unit Tl Table 4. Symbol Avalanche characteristics Parameter IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 8.5 A EAS Single pulse avalanche energy (starting TJ=25 °C, ID=IAS, VDD=50 V) 610 mJ Doc ID 16964 Rev 1 3/12 Electrical characteristics 2 STF26NM60N-H Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage ID = 1 mA, VGS = 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, @125 °C 1 10 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V 0.1 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 10 A V(BR)DSS Table 6. Symbol Ciss Coss Crss Coss eq. (1) Qg Qgs Qgd Rg 600 2 V 3 Ω 0.135 0.165 Dynamic Parameter Test conditions Min. Typ. Max. Unit - pF pF pF Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 - 1800 115 1.1 Equivalent output capacitance VGS = 0, VDS = 0 to 480 V - 310 - pF Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 20 A, VGS = 10 V, (see Figure 15) - 60 8.5 30 - nC nC nC Gate input resistance f=1 MHz Gate DC Bias=0 Test signal level = 20 mV open drain - 2.8 - Ω 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS 4/12 Doc ID 16964 Rev 1 STF26NM60N-H Electrical characteristics Table 7. Symbol td(on) tr td(off) tf Table 8. Symbol Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 300 V, ID = 10 A RG = 4.7 Ω VGS = 10 V (see Figure 14) Min. Typ. Max. Unit - 13 25 85 50 - ns ns ns ns Min Typ. Max Unit - 20 80 A A 1.5 V Source drain diode Parameter Test conditions ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 20 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 20 A, di/dt = 100 A/µs VDD = 60 V (see Figure 16) - 370 5.8 31.6 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 20 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 16) - 450 7.5 32.5 ns µC A trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 16964 Rev 1 5/12 Electrical characteristics STF26NM60N-H 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM03315v1 D S( on ) O p Li era m ite tion d by in t m his ax a R rea is ID (A) 10 1 10µs 100µs 1ms 10ms Tj=150°C Tc=25°C 0.1 Sinlge pulse 0.01 0.1 10 1 100 VDS(V) Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance AM03318v1 GFS (S) TJ=-50°C AM03317v1 RDS(on) (Ω) ID=10A VGS=10V 0.16 8.5 TJ=25°C 0.15 6.5 0.14 TJ=150°C 0.13 4.5 0.12 2.5 0.11 0.5 0 6/12 5 10 15 20 0.1 ID(A) Doc ID 16964 Rev 1 0 5 10 15 20 ID(A) STF26NM60N-H Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM03320v1 VGS (V) VDD=480V 12 ID=20A VDS VGS 10 Capacitance variations AM03319v1 C (pF) 10000 Ciss 1000 8 6 100 Coss 4 10 Crss 2 0 0 20 10 40 30 50 60 1 0.1 Qg(nC) Figure 10. Normalized gate threshold voltage vs temperature AM03321v1 VGS(th) (norm) 1.1 0.9 1.3 0.8 0.9 25 50 75 100 TJ(°C) Figure 12. Source-drain diode forward characteristics VDS(V) AM03322v1 0.5 -50 -25 0 25 50 75 100 TJ(°C) Figure 13. Normalized BVDSS vs temperature AM03324v1 VSD (V) 100 RDS(on) (norm) 2.1 1.7 0 10 Figure 11. Normalized on resistance vs temperature 1.0 0.7 -50 -25 1 TJ=-50°C 1.2 1.0 TJ=25°C 0.8 TJ=150°C AM03323v1 BVDSS (norm) 1.07 1.05 1.03 1.01 0.6 0.99 0.4 0.97 0.2 0.95 0 0 10 20 30 40 50 ISD(A) 0.93 -50 -25 Doc ID 16964 Rev 1 0 25 50 75 100 TJ(°C) 7/12 Test circuits 3 STF26NM60N-H Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 18. Unclamped inductive waveform AM01471v1 Figure 19. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/12 0 Doc ID 16964 Rev 1 10% AM01473v1 STF26NM60N-H 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 16964 Rev 1 9/12 Package mechanical data Table 9. STF26NM60N-H TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Figure 20. TO-220FP drawing L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_K 10/12 Doc ID 16964 Rev 1 STF26NM60N-H 5 Revision history Revision history Table 10. Document revision history Date Revision 12-Jan-2010 1 Changes First release Doc ID 16964 Rev 1 11/12 STF26NM60N-H Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12 Doc ID 16964 Rev 1