STF2LN60K3

STD2LN60K3, STF2LN60K3, STU2LN60K3 N-channel 600 V, 4 Ω typ., 2 A SuperMESH3™ Power MOSFET in DPAK, TO-220FP and IPAK packages Datasheet — production data Features TAB Order codes STD2LN60K3 STF2LN60K3 STU2LN60K3 VDSS 600 V RDS(on) max ID PTOT 3 1 < 4.5 Ω 2A 3 DPAK 45 W 20 W 45 W 1 2 TO-220FP TAB ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected 3 2 1 IPAK Figure 1. Applications ■ Internal schematic diagram D(2,TAB) Switching applications Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. G(1) S(3) AM01476v1 Table 1. Device summary Order codes Marking Package Packaging DPAK Tape and reel STD2LN60K3 STF2LN60K3 2LN60K3 TO-220FP Tube STU2LN60K3 July 2012 This is information on a product in full production. IPAK Doc ID 023500 Rev 1 1/20 www.st.com 20 Contents STD2LN60K3, STF2LN60K3, STU2LN60K3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ......................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 2/20 .............................................. 9 Doc ID 023500 Rev 1 STD2LN60K3, STF2LN60K3, STU2LN60K3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit DPAK TO-220FP IPAK VDS Drain-source voltage 600 V VGS Gate- source voltage ± 30 V ID ID IDM (2) PTOT Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C dv/dt (3) 1.26 (1) 2 A 1.26 A 8 A Total dissipation at TC = 25 °C 45 20 45 W 0.36 0.16 0.36 W/°C Gate source ESD (HBM-C = 100 pF, R = 1.5 kΩ) Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature Max. operating junction temperature 8 (1) 8 VISO Tj 1.26 2 (1) Drain current (pulsed) Derating factor VESD(G-S) 2 2500 V 12 V/ns 2500 V -55 to 150 °C 150 °C 1. Limited by package 2. Pulse width limited by safe operating area 3. ISD ≤ 2 A, di/dt ≤ 400 A/µs, peak VDS < V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit DPAK TO-220FP IPAK 6.25 2.78 Rthj-case Thermal resistance junction-case max 2.78 Rthj-pcb Thermal resistance junction-pcb max 50 Rthj-amb Thermal resistance junction-amb max Table 4. Symbol °C/W °C/W 62.5 100 °C/W Avalanche characteristics Parameter Max value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 2 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 80 mJ Doc ID 023500 Rev 1 3/20 Electrical characteristics 2 STD2LN60K3, STF2LN60K3, STU2LN60K3 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 IDSS Zero gate voltage VDS = 600 V drain current (VGS = 0) VDS = 600 V, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Gate threshold voltage VDS = VGS, ID = 50 µA RDS(on Static drain-source onVGS = 10 V, ID = 1 A resistance Symbol Ciss Coss Crss Co(tr)(1) Co(er) (2) Typ. Max. Unit 600 V 1 50 µA µA ± 10 µA 3.75 4.5 V 4 4.5 Ω VGS = ± 20 V VGS(th) Table 6. Min. 3 Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Test conditions Min. Typ. Max. Unit VDS = 50 V, f = 1 MHz, VGS = 0 - 235 22 3.5 - pF pF pF - 14 - pF - 10 - pF Eq. capacitance time related VGS = 0, VDS = 0 to 480 V Eq. capacitance energy related RG Intrinsic gate resistance f = 1 MHz open drain - 7 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 1 A, VGS = 10 V (see Figure 18) - 12 1.8 7.7 - nC nC nC 1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/20 Doc ID 023500 Rev 1 STD2LN60K3, STF2LN60K3, STU2LN60K3 Table 7. Symbol td(on) tr td(off) tf Table 8. Switching times Parameter Test conditions Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 300 V, ID =1 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17) Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage IRRM trr Qrr IRRM Min. Typ. - 10 8.5 23.5 21 Min. Typ. Max. Unit - ns ns ns ns Source drain diode Symbol trr Qrr Electrical characteristics Test conditions Max. Unit - 2 8 A A ISD = 2 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 2 A, di/dt = 100 A/µs VDD = 60 V (see Figure 22) - 200 800 8 ns nC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 2 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 22) - 230 950 8.5 ns nC A Min. Typ. 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Table 9. Symbol BVGSO(1) Gate-source Zener diode Parameter Test conditions Gate-source breakdown voltage Igs= ± 1 mA (open drain) 30 Max. Unit - V 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID 023500 Rev 1 5/20 Electrical characteristics STD2LN60K3, STF2LN60K3, STU2LN60K3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for DPAK and IPAK Figure 3. Thermal impedance for DPAK and IPAK Figure 5. Thermal impedance for TO-220FP Figure 7. Transfer characteristics AM13051v1 ID (A) Tj=150°C Tc=25°C Single pulse 10 is 1 in th ax 10µs is a e ar ) on S( 100µs D R n m tio by ra pe ited O im L 1ms 10ms 0.1 0.01 0.1 Figure 4. 10 1 100 VDS(V) Safe operating area for TO-220FP AM13052v1 ID (A) is 10µs n) 100µs DS (o Op Lim era ite tion d by in th m is ax ar R ea 1 0.1 1ms 10ms Tj=150°C Tc=25°C Single pulse 0.01 0.1 Figure 6. 1 10 100 VDS(V) Output characteristics AM13054v1 ID (A) VGS=10V AM13055v1 ID (A) VDS=15V 2.5 2.0 2.0 6V 1.5 1.5 1.0 1.0 0.5 0.5 5V 0 0 6/20 2 4 6 8 VDS(V) 0 0 Doc ID 023500 Rev 1 2 4 6 8 VGS(V) STD2LN60K3, STF2LN60K3, STU2LN60K3 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. VGS (V) AM13056v1 VDS VDD=480V ID=2A 12 (V) 500 VDS 10 400 8 Static drain-source on-resistance AM13057v1 RDS(on) (Ω) VGS=10V 4.2 4.0 3.8 300 6 3.6 200 4 100 2 0 0 Qg(nC) 10 5 0 Figure 10. Capacitance variations 3.2 3.0 0 0.2 0.4 0.6 0.8 1.0 1.2 ID(A) Figure 11. Output capacitance stored energy AM13058v1 C (pF) 3.4 Ciss AM13059v1 Eoss (µJ) 1.5 100 1 10 Coss 0.5 Crss 1 0.1 1 100 10 Figure 12. Normalized gate threshold voltage vs temperature AM13060v1 VGS(th) (norm) 0 0 VDS(V) 100 400 500 600 VDS(V) Figure 13. Normalized on-resistance vs temperature AM13061v1 RDS(on) (norm) ID=50µA 200 300 ID=1.1A VGS=10V 1.10 2.5 1.00 2.0 1.5 0.90 1.0 0.80 0.5 0.70 -75 -25 25 75 125 TJ(°C) Doc ID 023500 Rev 1 0 -75 -25 25 75 125 TJ(°C) 7/20 Electrical characteristics STD2LN60K3, STF2LN60K3, STU2LN60K3 Figure 14. Normalized BVDSS vs temperature Figure 15. Source-drain diode forward characteristics AM13062v1 BVDSS AM13063v1 VSD (V) (norm) ID=1mA TJ=-50°C 0.9 TJ=25°C 1.10 0.8 0.7 1.05 0.6 1.00 0.4 TJ=150°C 0.5 0.3 0.95 0.2 0.1 0.90 -75 25 -25 75 125 TJ(°C) Figure 16. Maximum avalanche energy vs temperature AM13064v1 EAS(mJ) 90 ID=2 A VDD=50 V 80 70 60 50 40 30 20 10 0 0 8/20 20 40 60 80 100 120 140 TJ(°C) Doc ID 023500 Rev 1 0 0 1 2 3 4 5 ISD(A) STD2LN60K3, STF2LN60K3, STU2LN60K3 3 Test circuits Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 19. Test circuit for inductive load Figure 20. Unclamped Inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 21. Unclamped inductive waveform AM01471v1 Figure 22. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 023500 Rev 1 10% AM01473v1 9/20 Package mechanical data 4 STD2LN60K3, STF2LN60K3, STU2LN60K3 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/20 Doc ID 023500 Rev 1 STD2LN60K3, STF2LN60K3, STU2LN60K3 Table 10. Package mechanical data DPAK (TO-252) mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 0.80 L4 0.60 R V2 1 0.20 0° 8° Doc ID 023500 Rev 1 11/20 Package mechanical data STD2LN60K3, STF2LN60K3, STU2LN60K3 Figure 23. DPAK (TO-252) drawing 0068772_I 12/20 Doc ID 023500 Rev 1 STD2LN60K3, STF2LN60K3, STU2LN60K3 Table 11. Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Doc ID 023500 Rev 1 13/20 Package mechanical data STD2LN60K3, STF2LN60K3, STU2LN60K3 Figure 24. TO-220FP drawing 7012510_Rev_K_B 14/20 Doc ID 023500 Rev 1 STD2LN60K3, STF2LN60K3, STU2LN60K3 Table 12. Package mechanical data IPAK (TO-251) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 5.40 0.3 B5 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 4.60 H 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 o 10 Doc ID 023500 Rev 1 1.00 15/20 Package mechanical data STD2LN60K3, STF2LN60K3, STU2LN60K3 Figure 25. IPAK (TO-251) drawing 0068771_H 16/20 AM09214V1 Doc ID 023500 Rev 1 STD2LN60K3, STF2LN60K3, STU2LN60K3 5 Packaging mechanical data Packaging mechanical data Table 13. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 18.4 22.4 Figure 26. DPAK footprint(a) 6.7 1.8 3 1.6 2.3 6.7 2.3 1.6 AM08850v1 a. All dimension are in millimeters Doc ID 023500 Rev 1 17/20 Packaging mechanical data STD2LN60K3, STF2LN60K3, STU2LN60K3 Figure 27. Tape for DPAK (TO-252) 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 W K0 B0 For machine ref. only including draft and radii concentric around B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 Figure 28. Reel for DPAK (TO-252) T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 18/20 Doc ID 023500 Rev 1 STD2LN60K3, STF2LN60K3, STU2LN60K3 6 Revision history Revision history Table 14. Document revision history Date Revision 05-Jul-2012 1 Changes First release. Doc ID 023500 Rev 1 19/20 STD2LN60K3, STF2LN60K3, STU2LN60K3 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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