STF2N80K5

STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 N-channel 800 V, 3.5 Ω typ., 2 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet − production data Features TAB Order codes VDS RDS(on)max ID PTOT 3 STD2N80K5 1 DPAK 2 1 3 STP2N80K5 TAB TO-220FP 4.5 Ω 20 W 2A 45 W • Industry’s lowest RDS(on) * area • Industry’s best figure of merit (FoM) 3 3 2 2 1 • Ultra low gate charge IPAK TO-220 800 V STU2N80K5 TAB 1 STF2N80K5 45 W • 100% avalanche tested Figure 1. Internal schematic diagram D(2, TAB) • Zener-protected Applications • Switching applications Description G(1) S(3) AM01476v1 These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1. Device summary Order codes Marking Package Packaging DPAK Tape and reel STD2N80K5 STF2N80K5 TO-220FP 2N80K5 STP2N80K5 TO-220 STU2N80K5 IPAK September 2015 This is information on a product in full production. DocID024993 Rev 3 Tube 1/22 www.st.com 22 Contents STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits .............................................. 9 4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 DPAK (TO-252) type A package information . . . . . . . . . . . . . . . . . . . . . . 10 4.2 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4.3 TO-220 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 4.4 IPAK (TO-251) type A package information . . . . . . . . . . . . . . . . . . . . . . . 17 5 Packaging information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 2/22 DocID024993 Rev 3 STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol DPAK, Parameter Unit TO-220FP TO-220, IPAK Gate- source voltage 30 V ID Drain current (continuous) at TC = 25 °C 2(1) A ID Drain current (continuous) at TC = 100 °C 1.3 A 8 A VGS IDM (2) Drain current (pulsed) PTOT Total dissipation at TC = 25 °C 45 20 W IAR Max current during repetitive or single pulse avalanche (pulse width limited by Tjmax) 0.5 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID=IAS, VDD= 50 V) 60.5 mJ Peak diode recovery voltage slope 4.5 V/ns MOSFET dv/dt ruggedness 50 V/ns dv/dt (3) dv/dt (4) Tj Operating junction temperature °C -55 to 150 Tstg Storage temperature °C 1. For TO-220FP limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 2 A, di/dt ≤ 100 A/µs, peak VDS ≤ V(BR)DSS 4. VDS ≤ 640 V Table 3. Thermal data Value Symbol Parameter Unit DPAK TO-220FP TO-220 IPAK Thermal resistance junction-case 2.78 Rthj-pcb Thermal resistance junction-pcb 50(1) Rthj-amb Thermal resistance junction-amb Rthj-case 6.25 2.78 2.78 °C/W 62.5 100 1. When mounted on FR-4 board of 1 inch², 2 oz Cu. DocID024993 Rev 3 3/22 Electrical characteristics 2 STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage (VGS= 0) ID = 1 mA Min. Typ. Max. 800 Unit V VDS = 800 V 1 µA VDS = 800 V TC=125 °C 50 µA Gate body leakage current (VDS = 0) VGS = ± 20 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 4 5 V RDS(on) Static drain-source onresistance VGS = 10 V, ID= 1 A 3.5 4.5 Ω Min. Typ. Max. Unit - 105 - pF - 8 - pF IDSS Zero gate voltage drain current (VGS = 0) IGSS 3 Table 5. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance - 0.5 - pF Co(tr)(1) Equivalent capacitance time related - 16 - pF Co(er)(2) Equivalent capacitance energy related - 7 - pF RG Intrinsic gate resistance - 18 - Ω Qg Total gate charge - 5 - nC - 1 - nC - 3.7 - nC Qgs Gate-source charge Qgd Gate-drain charge VDS =100 V, f=1 MHz, VGS=0 VGS = 0, VDS = 0 to 640 V f = 1 MHz, ID=0 VDD = 640 V, ID = 2 A VGS =10 V 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/22 DocID024993 Rev 3 STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Electrical characteristics Table 6. Switching times Symbol td(on) tr Parameter Test conditions Turn-on delay time Rise time td(off) tf VDD = 400 V, ID = 1 A, RG=4.7 Ω, VGS=10 V Turn-off delay time Fall time Min. Typ. Max. Unit - 8 - ns - 12 - ns - 19 - ns - 32 - ns Min. Typ. Max. Unit Table 7. Source drain diode Symbol Test conditions Source-drain current - 2 A (1) Source-drain current (pulsed) - 8 A (2) Forward on voltage - 1.5 V ISD ISDM VSD Parameter trr ISD= 2 A, VGS=0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD= 2 A, VDD= 60 V di/dt = 100 A/µs, ISD= 2 A,VDD= 60 V di/dt=100 A/µs, Tj=150 °C - 255 ns - 1 µC - 8 A - 285 ns - 1.45 µC - 7.5 A Min. Typ. Max. Unit 30 - - V 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Table 8. Gate-source Zener diode Symbol Parameter Test conditions V(BR)GSO Gate-source breakdown voltage IGS= ± 1mA, ID= 0 The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD capability of the device. The Zener voltage is appropriate for efficient and cost-effective intervention to protect the device integrity. These integrated Zener diodes thus eliminate the need for external components. DocID024993 Rev 3 5/22 Electrical characteristics 2.1 STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Electrical characteristics (curves) Figure 2. Safe operating area for DPAK and IPAK Figure 3. Thermal impedance for DPAK and IPAK AM18072v1 ID (A) 10 1 e ar a 10ms is S is t h RD x in n ma o ti by ra pe ed O mit i L n (o ) 100μs 1ms 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 1 10 100 VDS(V) Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP AM18073v1 ID (A) 10 1 10μs is ea ) a r S(on D t R x in n ma tio by a r pe ed O mit Li s hi 100μs 1ms 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 1 10 100 VDS(V) Figure 6. Safe operating area for TO-220 Figure 7. Thermal impedance for TO-220 AM18074v1 ID (A) 10μs ai (o n) s 100μs DS Op Lim era ite tion d b in y m this ax ar R e 1 1ms 10ms 0.1 Tj=150°C Tc=25°C Single pulse 0.01 0.1 6/22 1 10 100 VDS(V) DocID024993 Rev 3 STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Figure 8. Output characteristics Figure 9. Transfer characteristics AM18075v1 ID (A) Electrical characteristics VGS=10, 11V AM18085v1 ID (A) VDS=20V 3.0 3 2.5 9V 2.5 2.0 2 1.5 1.5 8V 1.0 1 0.5 7V 0.5 6V 0.0 4 2 0 6 8 10 Figure 10. Gate charge vs gate-source voltage VGS (V) AM18076v1 VDS 14 (V) 700 VDD = 640 V ID = 2 A VDS 12 600 10 500 8 400 6 300 4 200 2 100 0 0 1 2 3 4 0 5 12 14 16 VDS(V) 5 6 8 9 10 VGS(V) AM18077v1 RDS(on) (Ω) VGS=10V 6 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 ID(A) Figure 13. Output capacitance stored energy AM18078v1 C (pF) 7 Figure 11. Static drain-source on-resistance 0 Qg(nC) Figure 12. Capacitance variations 6 AM18079v1 Eoss (μJ) f = 1MHz 100 100 Ciss 2 10 Coss Crss 1 0.1 0.1 1 10 100 VDS(V) DocID024993 Rev 3 0 0 200 400 600 800 VDS(V) 7/22 Electrical characteristics STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on-resistance vs temperature AM18082v1 VGS(th) AM18081v1 RDS(on) (norm) (norm) ID=100 μA 1.2 ID=1 A VGS=10 V 2.5 1.1 1 2 0.9 0.8 1.5 0.7 1 0.6 0.5 0.5 0.4 -100 -50 0 50 100 0 -100 150 TJ(°C) Figure 16. Normalized V(BR)DSS vs temperature 150 TJ(°C) Figure 17. Source-drain diode forward characteristics AM18084v1 TJ=-50°C ID=1mA 1.1 1 1.05 0.9 TJ=25°C 0.8 1 0.95 0.7 0.9 0.6 TJ=150°C 0.5 -50 50 0 100 TJ(°C) Figure 18. Maximum avalanche energy vs starting TJ AM18086v1 EAS (mJ) 60 50 40 30 20 10 8/22 100 50 VSD(V) (norm) 0 0 0 AM18083v1 V(BR)DSS 0.85 -100 -50 20 40 60 80 100 120 140 TJ(°C) DocID024993 Rev 3 0 0.5 1 1.5 2 ISD(A) STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 3 Test circuits Test circuits Figure 19. Switching times test circuit for resistive load Figure 20. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 21. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 22. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 DocID024993 Rev 3 10% AM01473v1 9/22 Package information 4 STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 DPAK (TO-252) type A package information Figure 25. DPAK (TO-252) type A outline B$B 10/22 DocID024993 Rev 3 STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Package information Table 9. DPAK (TO-252) type A mechanical data mm Dim. Min. Typ. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 4.60 4.70 4.80 e 2.16 2.28 2.40 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 (L1) 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 5.10 6.60 1.00 R V2 5.25 0.20 0° 8° DocID024993 Rev 3 11/22 Package information STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Figure 26. DPAK (TO-252) footprint (a) )3BB a. All dimensions are in millimeters 12/22 DocID024993 Rev 3 STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 4.2 Package information TO-220FP package information Figure 27. TO-220FP package outline 7012510_Rev_K_B DocID024993 Rev 3 13/22 Package information STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Table 10. TO-220FP package mechanical data mm Dim. Min. Typ. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 14/22 Max. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID024993 Rev 3 STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 4.3 Package information TO-220 package information Figure 28. TO-220 package outline BW\SH$B5HYB7 DocID024993 Rev 3 15/22 Package information STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Table 11. TO-220 package mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 16/22 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 DocID024993 Rev 3 STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 4.4 Package information IPAK (TO-251) type A package information Figure 29. IPAK (TO-251) type A package outline B,.BW\SH$BUHY DocID024993 Rev 3 17/22 Package information STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Table 12. IPAK (TO-251) type A package mechanical data mm. DIM min. typ. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 b4 0.95 5.20 B5 5.40 0.30 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 6.60 e e1 2.28 4.40 H 18/22 max. 4.60 16.10 L 9.00 9.40 L1 0.80 1.20 L2 0.80 V1 10° DocID024993 Rev 3 1.00 STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 5 Packaging information Packaging information Figure 30. Tape for DPAK 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 DocID024993 Rev 3 19/22 Packaging information STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Figure 31. Reel for DPAK T REEL DIMENSIONS 40mm min. Access hole At slot location B D C N A Full radius G measured at hub Tape slot in core for tape start 25 mm min. width AM08851v2 Table 13. DPAK tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 20/22 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DocID024993 Rev 3 18.4 22.4 STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 6 Revision history Revision history Table 14. Document revision history Date Revision 11-Jul-2013 1 First release. 2 – – – – – – – – 3 – Updated title, features and description in cover page. – Updated Figure 10, Figure 11 and Section 4: Package information. – Minor text changes. 18-Feb-2014 25-Sep-2015 Changes Added: IPAK package Modified: EAS value in Table 2 Modified: Rthj-case in Table 3 Modified: typical values in Table 5, 6 and 7 Added: Section 2.1: Electrical characteristics (curves) Updated: Figure 25, 26 and Table 9 Added: Table 12 and Figure 29 Minor text changes DocID024993 Rev 3 21/22 STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 22/22 DocID024993 Rev 3