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STF30NM50N

STF30NM50N

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOT78

  • 描述:

    MOSFET N-CH 500V 27A TO-220FP

  • 数据手册
  • 价格&库存
STF30NM50N 数据手册
STB30NM50N,STI30NM50N,STF30NM50N STP30NM50N, STW30NM50N N-channel 500 V, 0.090 Ω, 27 A MDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features Type VDSS (@Tjmax) RDS(on) max ID STB30NM50N 550 V < 0.115 Ω 27 A STI30NM50N 550 V < 0.115 Ω 27 A STF30NM50N 550 V < 0.115 Ω 27 A(1) STP30NM50N 550 V < 0.115 Ω 27 A STW30NM50N 550 V < 0.115 Ω 27 A 3 3 12 1 D²PAK I²PAK 2 1 TO-247 1. Limited only by maximum temperature allowed 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Figure 1. ■ 1 2 TO-220FP TO-220 Application 3 3 2 1 ■ 3 Internal schematic diagram Switching applications Description This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes Marking Package Packaging STB30NM50N 30NM50N D²PAK Tape and reel STI30NM50N 30NM50N I²PAK Tube STF30NM50N 30NM50N TO-220FP Tube STP30NM50N 30NM50N TO-220 Tube STW30NM50N 30NM50N TO-247 Tube September 2008 Rev 2 1/18 www.st.com 18 Contents STB/I/F/P/W30NM50N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 2/18 .............................................. 9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 STB/I/F/P/W30NM50N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter D²PAK/I²PAK TO-220FP TO-220/TO-247 Unit VDS Drain-source voltage (VGS=0) 500 V VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 27 27 (1) A ID Drain current (continuous) at TC = 100 °C 17 17(1) A IDM (2) Drain current (pulsed) 108 108 (1) A PTOT Total dissipation at TC = 25 °C 190 40 W dv/dt (3) Peak diode recovery voltage slope 15 VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Tstg Storage temperature Tj -- Max. operating junction temperature V/ns 2500 V -55 to 150 °C 150 °C 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 27 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junctioncase max Rthj-pcb Thermal resistance junctionpcb max Rthj-amb Thermal resistance junctionamb max Tl Table 4. Symbol I²PAK TO-220 D²PAK TO-220FP TO-247 Unit 0.66 -- -62.5 Maximum lead temperature for soldering purposes 3.1 0.66 °C/W 30 -- -- °C/W -- 62.5 50 °C/W 300 °C Avalanche characteristics Parameter Max value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 12 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 900 mJ 3/18 Electrical characteristics 2 STB/I/F/P/W30NM50N Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS On /off states Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 Typ. Max. 500 Unit V IDSS VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) 100 nA 3 4 V 0.090 0.115 Ω Typ. Max. Unit VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on Static drain-source on resistance Table 6. Symbol 2 VGS = 10 V, ID = 13.5 A Dynamic Parameter Test conditions gfs (1) Forward transconductance Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 Rg Gate input resistance Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDS = 15 V, ID = 13.5 A Min. 23 S 2740 160 15 pF pF pF f=1MHz Gate DC Bias=0 Test signal level=20 mV open drain 2.7 Ω VDD = 400 V, ID = 27 A, VGS = 10 V (see Figure 19) 94 15 50 nC nC nC 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 4/18 Min. STB/I/F/P/W30NM50N Electrical characteristics Table 7. Switching times Symbol Parameter td(on) tr td(off) tf Table 8. Symbol Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions Min. Typ. Max Unit 23 20 115 60 VDD = 250 V, ID = 13.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18) ns ns ns ns Source drain diode Parameter Test conditions Min Typ. Max Unit ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 27 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 27 A, di/dt = 100 A/µs VDD= 100 V Tj = 25°C (see Figure 20) 480 8 33 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 27 A, di/dt = 100 A/µs VDD= 100 V Tj = 150°C (see Figure 20) 540 10 35 ns µC A trr Qrr IRRM trr Qrr IRRM 27 108 A A 1.5 V 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/18 Electrical characteristics STB/I/F/P/W30NM50N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 / D²PAK / I²PAK Figure 3. Thermal impedance for TO-220 / D²PAK / I²PAK !-V )$ ! GC20540 K 4J # 4C # 3INGLEPULSE δ=0.5  /PERATINGINTHISAREAIS ,IMITEDBYMAX2$3ON 0.2 0.1 —S —S MS  -1 10 0.05 Zth=k Rthj-c δ=tp/τ 0.02 MS  0.01 Single pulse tp τ -2   Figure 4.    6$36 Safe operating area for TO-220FP  -4 Figure 5. -2 -3 10 10 10 -1 tp (s) 10 Thermal impedance for TO-220FP GC20521 !-V )$ !  10 -5 10 K 4J # 4C # 3INGLEPULSE δ=0.5 0.2 0.1 IS EA AR ON IS $3 H T 2 IN AX ING M AT BY R E D /P MITE ,I -1 —S —S 10 0.05 0.02 0.01 Single pulse MS MS -2 Zth=k Rthj-c δ=tp/τ 10  tp τ -3   Figure 6. 10    -4 10 6$36 Safe operating area for TO-247 Figure 7. -2 10 -1 10 10 0 GC18460 K 4J # 4C # 3INGLEPULSE tp(s) Thermal impedance for TO-247 !-V )$ ! δ=0.5 0.2  0.1 IS EA  -3 10 —S R ON A IS $3 TH X2 IN G MA TIN Y RA DB E E P / IMIT , -1 10 0.05 0.02 —S MS MS 0.01 Zth=k Rthj-c δ=tp/τ Single pulse -2 10  tp   6/18 τ -3 10    6$36 -5 10 -4 10 -3 10 -2 10 -1 10 tp (s) STB/I/F/P/W30NM50N Figure 8. Electrical characteristics Output characteristics Figure 9. AM00941v1 ID (A) VGS=10V Transfer characteristics !-V )$ !  35  30  25 20  5V 15  10   5 4V 0 0 10 30 VDS(V) 20 Figure 10. Transconductance       6'36  Figure 11. Static drain-source on resistance !-V )$ ! 4*  #  AM00944v1 RDS(on) (Ω) 0.094  4* #  0.090 4* #  0.092 0.088  0.086         )$! 0.084 0 10 5 15 25 ID(A) 30 Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations AM00945v1 VGS (V) VDD=400V ID=27A 12 !-V #P&  #ISS 10  8 6  #OSS  #RSS 4 2 0  0 20 40 60 80 100 Qg(nC)     6$36 7/18 Electrical characteristics STB/I/F/P/W30NM50N Figure 14. Normalized gate threshold voltage vs temperature !-V 6'3TH NORM  Figure 15. Normalized on resistance vs temperature !-V 2$3ON NORM            4* # Figure 16. Source-drain diode forward characteristics    4* # Figure 17. Normalized BVDSS vs temperature !-V 63$6   !-V 63$6 4* #   #   #         8/18      )3$!      4* # STB/I/F/P/W30NM50N 3 Test circuits Test circuits Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform 9/18 Package mechanical data 4 STB/I/F/P/W30NM50N Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/18 STB/I/F/P/W30NM50N Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.49 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 11/18 Package mechanical data STB/I/F/P/W30NM50N TO-220FP mechanical data mm. Dim. Min. A 4.40 inch Typ Max. Min. 4.60 0.173 Typ. 0.181 Max. B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.70 0.017 0.027 F 0.75 1.00 0.030 0.039 F1 1.15 1.50 0.045 0.067 F2 1.15 1.50 0.045 0.067 G 4.95 5.20 0.195 0.204 G1 2.40 2.70 0.094 0.106 H 10 10.40 0.393 L2 16 0.409 0.630 28.6 30.6 1.126 L4 9.80 10.60 0.385 1.204 0.417 L5 2.9 3.6 0.114 0.141 L6 15.90 16.40 0.626 0.645 L7 9 9.30 0.354 0.366 Dia 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 Dia F F1 L7 L2 L5 1 2 3 L4 7012510-I 12/18 STB/I/F/P/W30NM50N Package mechanical data TO-247 mechanical data mm. Dim. A Min. 4.85 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e Typ Max . 5.15 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 øP 3.55 øR 4.50 S 3.65 5.50 5.50 13/18 Package mechanical data STB/I/F/P/W30NM50N TO-262 mechanical data mm inch Dim Min A A1 b b1 c c2 D e e1 E L L1 L2 14/18 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 Typ Max Min 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 Typ Max 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 STB/I/F/P/W30NM50N Package mechanical data D²PAK (TO-263) mechanical data mm inch Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 Typ 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 Max Min 4.60 0.23 0.93 1.70 0.60 1.36 9.35 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 10.40 2.54 4.88 15 2.49 2.29 1.27 1.30 Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 8° 0° 0.4 0° Typ 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8° 0079457_M 15/18 Packaging mechanical data 5 STB/I/F/P/W30NM50N Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 MAX. R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 16/18 inch 0.933 0.956 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB/I/F/P/W30NM50N 6 Revision history Revision history Table 9. Document revision history Date Revision Changes 19-Feb-2008 1 First release 23-Sep-2008 2 Document status promoted from preliminary data to datasheet. 17/18 STB/I/F/P/W30NM50N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 18/18
STF30NM50N 价格&库存

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