STF33N60DM6

STF33N60DM6 Datasheet N-channel 600 V, 115 mΩ typ., 25 A, MDmesh DM6 Power MOSFET in a TO‑220FP package Features 1 2 3 TO-220FP D(2) G(1) Order code VDS RDS(on) max. ID STF33N60DM6 600 V 128 mΩ 25 A • • Fast-recovery body diode Lower RDS(on) per area vs previous generation • • • • Low gate charge, input capacitance and resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications • S(3) AM15572v1_no_tab Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STF33N60DM6 Product summary Order code STF33N60DM6 Marking 33N60DM6 Package TO-220FP Packing Tube DS12937 - Rev 2 - July 2020 For further information contact your local STMicroelectronics sales office. www.st.com STF33N60DM6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Gate-source voltage ±25 V Drain current (continuous) at TC = 25 °C 25 A Drain current (continuous) at TC = 100 °C 16 A Drain current (pulsed) 80 A Total power dissipation at TC = 25 °C 35 W dv/dt(2) Peak diode recovery voltage slope 100 V/ns (2) Peak diode recovery current slope 1000 A/µs MOSFET dv/dt ruggedness 100 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) 2.5 kV Tstg Storage temperature range -55 to 150 °C Value Unit VGS ID IDM (1) PTOT di/dt dv/dt(3) Tj Parameter Operating junction temperature range 1. Pulse width is limited by safe operating area. 2. ISD ≤ 25 A, VDS(peak) < V(BR)DSS, VDD = 400 V 3. VDS ≤ 480 V Table 2. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case 3.6 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 °C/W Value Unit Table 3. Avalanche characteristics Symbol DS12937 - Rev 2 Parameter IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 4 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) 360 mJ page 2/12 STF33N60DM6 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. 600 Zero gate voltage drain current 1 µA 100 µA ±5 µA 4 4.75 V 115 128 mΩ Min. Typ. Max. Unit - 1500 - pF - 115 - pF - 3 - pF VGS = 0 V, VDS = 600 V, TC = 125 °C(1) IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 12.5 A Unit V VGS = 0 V, VDS = 600 V IDSS Max. 3.25 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance (1) Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 V Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 225 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 1.8 - Ω Qg Total gate charge VDD = 480 V, ID = 25 A, - 35 - nC Qgs Gate-source charge VGS = 0 to 10 V - 10 - nC Qgd Gate-drain charge (see Figure 14. Test circuit for gate charge behavior) - 15 - nC Coss eq. 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol td(on) tr td(off) tf DS12937 - Rev 2 Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time VDD = 300 V, ID = 12.5 A, - 14 - ns Rise time RG = 4.7 Ω, VGS = 10 V - 9 - ns Turn-off delay time (see Figure 13. Test circuit for resistive load switching times and Figure 18. Switching time waveform) - 7 - ns - 35 - ns Fall time page 3/12 STF33N60DM6 Electrical characteristics Table 7. Source drain diode Symbol ISD Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 25 A ISDM(1) Source-drain current (pulsed) - 80 A VSD(2) Forward on voltage VGS = 0 V, ISD = 25 A - 1.6 V trr Reverse recovery time ISD = 25 A, di/dt = 100 A/µs, - 105 ns Qrr Reverse recovery charge VDD = 60 V - 0.47 µC Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 9 A trr Reverse recovery time ISD = 25 A, di/dt = 100 A/µs, - 210 ns Qrr Reverse recovery charge VDD = 60 V, Tj = 150 °C - 1.68 µC Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 16 A IRRM IRRM 1. Pulse width is limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %. DS12937 - Rev 2 page 4/12 STF33N60DM6 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area ID (A) Figure 2. Normalized thermal impedance GADG250220191140SOA GC20521 K δ=0.5 tp =1 µs 0.2 10 1 tp =10 µs 10 0 0.1 0.05 0.02 0.01 Operation in this area is limited by R DS(on) tp =100 µs 10 10-1 10 -2 10 -1 10 10 0 10 1 10-2 tp =1 ms tp =10 ms VDS (V) 2 10-3 10-4 Figure 3. Output characteristics ID (A) VGS = 9 V 10 Ƭ 10-0 tp(s) GADG191220180853TCH VDS = 20 V 60 50 40 40 VGS = 7 V 30 30 20 20 10 10 VGS = 6 V 0 0 4 8 12 16 VDS (V) 0 4 Figure 5. Gate charge vs gate-source voltage VDS (V) GADG191220180853QVG VDD = 480 V, ID = 25 A 600 8 Qgd 300 6 200 4 2 100 5 10 15 5 6 7 8 9 VGS (V) Figure 6. Capacitance variations C (pF) GADG191220180854CVR 10 4 10 VDS Qgs VGS (V) 12 Qg 500 DS12937 - Rev 2 10 -1 70 VGS = 8 V 50 0 0 10 -2 ID (A) GADG191220180852OCH 60 tp -3 Figure 4. Transfer characteristics VGS = 10 V 70 400 Zth= K*R thJ-c δ =t p/Ƭ Single pulse TJ≤150 °C TC=25 °C VGS=10 V single pulse -1 20 25 30 35 0 Qg (nC) CISS 10 3 10 2 10 1 10 0 10 -1 COSS f = 1 MHz CRSS 10 0 10 1 10 2 VDS (V) page 5/12 STF33N60DM6 Electrical characteristics (curves) Figure 7. Static drain-source on-resistance RDS(on) (mΩ) GADG191220180855RID Figure 8. Normalized on-resistance vs temperature RDS(on) (norm.) 127 2.5 123 2.0 VGS = 10 V 119 1.0 111 0.5 5 10 15 20 25 ID (A) Figure 9. Normalized gate threshold voltage vs temperature VGS(th) (norm.) GADG191220180856VTH 0.0 -75 -25 25 75 125 Tj (°C) Figure 10. Normalized V(BR)DSS vs temperature V(BR)DSS (norm.) GADG191220180856BDV 1.10 1.1 ID = 1 mA 1.05 1.0 0.9 1.00 ID = 250 µA 0.95 0.8 0.90 0.7 0.6 -75 VGS = 10 V 1.5 115 107 0 GADG191220180856RON -25 25 75 125 Tj (°C) Figure 11. Output capacitance stored energy EOSS (μJ) 14 GADG191220180857EOS 0.85 -75 -25 25 125 Tj (°C) Figure 12. Source-drain diode forward characteristics VSD (V) GADG191220180856SDF 1.1 12 75 TJ = -50 °C 1.0 10 TJ = 25 °C 0.9 8 0.8 6 TJ = 150 °C 0.7 4 0.6 2 0 0 DS12937 - Rev 2 100 200 300 400 500 600 VDS (V) 0.5 0 5 10 15 20 25 ISD (A) page 6/12 STF33N60DM6 Test circuits 3 Test circuits Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior VDD RL RL 2200 + μF 3.3 μF VDD VD IG= CONST VGS + pulse width RG VGS D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v10 AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A VD 100 µH fast diode B B B 3.3 µF D G + Figure 16. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 18. Switching time waveform Figure 17. Unclamped inductive waveform ton V(BR)DSS td(on) toff td(off) tr tf VD 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS12937 - Rev 2 page 7/12 STF33N60DM6 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-220FP package information Figure 19. TO-220FP package outline 7012510_Rev_13_B DS12937 - Rev 2 page 8/12 STF33N60DM6 TO-220FP package information Table 8. TO-220FP package mechanical data Dim. mm Min. Max. A 4.40 4.60 B 2.50 2.70 D 2.50 2.75 E 0.45 0.70 F 0.75 1.00 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.20 G1 2.40 2.70 H 10.00 10.40 L2 DS12937 - Rev 2 Typ. 16.00 L3 28.60 30.60 L4 9.80 10.60 L5 2.90 3.60 L6 15.90 16.40 L7 9.00 9.30 Dia 3.00 3.20 page 9/12 STF33N60DM6 Revision history Table 9. Document revision history DS12937 - Rev 2 Date Version Changes 25-Feb-2019 1 First release. 01-Jul-2020 2 Updated Table 1. Absolute maximum ratings and Table 7. Source drain diode. page 10/12 STF33N60DM6 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 DS12937 - Rev 2 page 11/12 STF33N60DM6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS12937 - Rev 2 page 12/12