STF34NM60N

STF34NM60N N-channel 600 V, 0.092 Ω typ., 31.5 A MDmesh™ II Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDSS RDS(on) ID PTOT STF34NM60N 600 V 0.105 Ω 31.5 A 40 W • 100% avalanche tested • Low input capacitance and gate charge 3 1 • Low gate input resistance 2 TO-220FP Applications • Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. ' * 6 $0Y Table 1. Device summary Order code Marking Packages Packaging STF34NM60N 34NM60N TO-220FP Tube July 2013 This is information on a product in full production. DocID024967 Rev 1 1/13 www.st.com Contents STF34NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 .............................................. 8 DocID024967 Rev 1 STF34NM60N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 600 V VGS Gate-source voltage ± 25 V (1) ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C 20(1) A Drain current (pulsed) 126 A Total dissipation at TC = 25 °C 250 W 7 A IDM (2) PTOT 31.5 A IAR Max current during repetitive or single pulse avalanche (pulse width limited by Tjmax ) EAS Single pulse avalanche energy (starting TJ = 25 °C, ID=IAS, VDD= 50 V) 345 mJ VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) 2500 V dv/dt (3) Peak diode recovery voltage slope 15 V/ns dv/dt(4) MOSFET dv/dt ruggedness 50 V/ns -55 to 150 °C Tstg Tj Storage temperature Operating junction temperature 150 1. Limited by package 2. Pulse width limited by safe operating area. 3. ISD ≤ 31.5 A, di/dt ≤ 400 A/µs, V DS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS 4. VDS ≤ 480 V Table 3. Thermal data Symbol Parameter Value Rthj-case Thermal resistance junction-case max 3.1 Rthj-amb Thermal resistance junction-amb max 62.5 Unit °C/W DocID024967 Rev 1 3/13 13 Electrical characteristics 2 STF34NM60N Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage (VGS= 0) ID = 1 mA IDSS Zero gate voltage drain current (VGS = 0) VDS = 600 V VDS = 600 V, Tc=125 °C 1 100 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ± 25 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4 V RDS(on) Static drain-source onresistance VGS = 10 V, ID= 14.5 A V(BR)DSS 600 2 V 3 Ω 0.092 0.105 Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit - 2722 - pF - 173 - pF Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance - 1.75 - pF Equivalent capacitance time VGS = 0, VDS = 0 to 480 V related - 458 - pF Turn-on delay time - 18 - ns - 36 - ns - 104 - ns - 73 - ns Coss eq.(1) td(on) tr td(off) tf VDD = 300 V, ID = 15.75 A, RG=4.7 Ω, VGS=10 V (see Figure 18 and 14) Rise time Turn-off delay time Fall time Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge RG VDS =100 V, f=1 MHz, VGS=0 Intrinsic gate resistance VDD = 480 V, ID = 31.5 A VGS =10 V (see Figure 15) - 84 - nC - 14 - nC - 45 - nC f = 1 MHz, gate DC Bias=0 test signal level=20 mV open drain - 2.9 - Ω 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/13 DocID024967 Rev 1 STF34NM60N Electrical characteristics Table 6. Source drain diode Symbol ISD ISDM (1) VSD(2) Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 31.5 A Source-drain current (pulsed) - 126 A 1.6 V Forward on voltage ISD= 31.5 A, VGS=0 - trr Reverse recovery time - 412 ns Qrr Reverse recovery charge - 8 µC IRRM Reverse recovery current ISD= 31.5 A, VDD= 60 V di/dt = 100 A/µs, (see Figure 16) - 39 A ISD= 12 A,VDD= 60 V di/dt=100 A/µs, Tj=150 °C (see Figure 16) - 490 ns - 10 µC - 43 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. DocID024967 Rev 1 5/13 13 Electrical characteristics 2.1 STF34NM60N Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM09018v1 ID (A) Tj=150°C Tc=25°C Single pulse 100 his is ea ar (on) DS xR t in a ion m at by r e d Op mite Li 10 1 10µs 100µs 1ms 10ms 0.1 0.01 0.1 10 1 100 VDS(V) Figure 4. Output characteristics Figure 5. Transfer characteristics AM09020v1 ID (A) VGS=10V 80 AM09021v1 ID (A) 80 VDS=20V 70 70 60 60 6V 50 50 40 40 30 30 20 20 5V 10 0 0 5 10 15 20 30 25 10 Figure 6. Gate charge vs gate-source voltage AM15701v1 VDS (V) VGS (V) VDD=480V ID=31.5A 12 VDS 0 0 VDS(V) 2 4 8 6 VGS(V) Figure 7. Static drain-source on-resistance AM15702v1 RDS(on) (Ω) 500 0.096 400 0.094 300 0.092 200 0.09 100 0.088 0 Qg(nC) 0.086 VGS=10V 10 8 6 4 2 0 0 6/13 20 40 60 80 DocID024967 Rev 1 0 5 10 15 20 25 30 ID(A) STF34NM60N Electrical characteristics Figure 8. Capacitance variations Figure 9. Output capacitance stored energy AM09024v1 C (pF) AM09025v1 Eoss (µJ) 10000 Ciss 2 1000 Coss 100 1 10 1 0.1 Crss 1 100 10 Figure 10. Normalized gate threshold voltage vs temperature AM09026v1 VGS(th) (norm) 0 0 VDS(V) 200 100 300 400 500 VDS(V) Figure 11. Normalized on-resistance vs temperature AM15703v1 RDS(on) (norm) ID=250µA ID=14.5A 2.1 1.10 1.9 1.7 1.00 1.5 0.90 1.3 1.1 0.80 0.9 0.70 0.60 -50 -25 0.7 0 25 50 75 100 TJ(°C) Figure 12. Normalized BVDSS vs temperature AM15704v1 VDS 0.5 -50 -25 1.07 1.05 1.2 1.03 1 1.01 0.8 0.99 0.6 0.97 0.4 0.95 0.2 ID=1mA 25 TJ(°C) 75 100 50 Figure 13. Source-drain diode forward characteristics VSD (V) 1.4 (norm) 0 AM15705v1 TJ=-50°C 0.93 -50 -25 0 0 25 50 75 100 TJ(°C) DocID024967 Rev 1 TJ=25°C TJ=150°C 0 5 10 15 20 25 30 ISD(A) 7/13 13 Test circuits 3 STF34NM60N Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 16. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 17. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/13 0 DocID024967 Rev 1 10% AM01473v1 STF34NM60N 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID024967 Rev 1 9/13 13 Package mechanical data STF34NM60N Table 7. TO-220FP mechanical data mm Dim. Min. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 10/13 Typ. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID024967 Rev 1 STF34NM60N Package mechanical data Figure 20. TO-220FP drawing 7012510_Rev_K_B DocID024967 Rev 1 11/13 13 Revision history 5 STF34NM60N Revision history Table 8. Document revision history 12/13 Date Revision 16-Jul-2013 1 Changes First release. DocID024967 Rev 1 STF34NM60N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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