STF36N60M6

STF36N60M6 Datasheet N-channel 600 V, 85 mΩ typ., 30 A MDmesh™ M6 Power MOSFET in a TO-220FP package Features 1 2 3 TO-220FP D(2) Order code VDS RDS(on) max. ID STF36N60M6 600 V 99 mΩ 30 A • • Reduced switching losses Lower RDS(on) per area vs previous generation • • • Low gate input resistance 100% avalanche tested Zener-protected Applications • • • G(1) Switching applications LLC converters Boost PFC converters Description S(3) AM15572v1_no_tab Product status link The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. STF36N60M6 Device summary Order code STF36N60M6 Marking 36N60M6 Package TO-220FP Packing Tube DS12609 - Rev 1 - July 2018 For further information contact your local STMicroelectronics sales office. www.st.com STF36N60M6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ±25 V ID (1) Drain current (continuous) at TC = 25 °C 30 A ID (1) Drain current (continuous) at TC = 100 °C 19 A Drain current (pulsed) 102 A Total dissipation at TC = 25 °C 40 W Peak diode recovery voltage slope 15 V/ns MOSFET dv/dt ruggedness 50 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) 2.5 kV Tstg Storage temperature range -55 to 150 °C Value Unit IDM (2) PTOT dv/dt (3) dv/dt (4) Tj Operating junction temperature range 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 30 A, di/dt ≤ 400 A/μs; VDS(peak) < V(BR)DSS, VDD = 400 4. VDS ≤ 480 V Table 2. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case 3.1 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 °C/W Value Unit 5 A 750 mJ Table 3. Avalanche characteristics Symbol IAR EAS DS12609 - Rev 1 Parameter Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) page 2/13 STF36N60M6 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage Min. VGS = 0 V, ID = 1 mA Typ. 600 Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source onresistance VGS = 10 V, ID = 15 A VGS = 0 V, VDS = 600 V, TC = 125 Unit V VGS = 0 V, VDS = 600 V IDSS Max. 1 µA 100 µA ±5 µA 4 4.75 V 85 99 mΩ Min. Typ. Max. Unit - 1960 - pF - 93 - pF - 6 - pF °C(1) 3.25 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Test conditions VDS= 100 V, f = 1 MHz, VGS = 0 V Reverse transfer capacitance (1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 332 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 1.6 - Ω Qg Total gate charge - 44.3 - nC Qgs Gate-source charge - 10.1 - nC Qgd Gate-drain charge - 25 - nC Coss eq. VDD = 480 V, ID = 30 A, VGS = 0 to 10 V (see Figure 14. Test circuit for gate charge behavior) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 6. Switching times Symbol td(on) tr td(off) tf Parameter Test conditions Turn-on delay time Rise time Turn-off delay time VDD = 300 V, ID = 15 A, RG = 4.7 Ω, VGS = 10 V (see Figure 13. Test circuit for resistive load switching times and Figure 18. Switching time waveform) Fall time Min. Typ. Max. Unit - 15.2 - ns - 5.3 - ns - 50.2 - ns - 7.3 - ns Min. Typ. Max. Unit 30 A Table 7. Source-drain diode Symbol ISD DS12609 - Rev 1 Parameter Source-drain current Test conditions - page 3/13 STF36N60M6 Electrical characteristics Symbol Parameter ISDM(1) Source-drain current (pulsed) VSD (2) Forward on voltage trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Test conditions VGS = 0 V, ISD = 30 A ISD = 30 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 15. Test circuit for inductive load switching and diode recovery times) ISD = 30 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 15. Test circuit for inductive load switching and diode recovery times) Min. Typ. Max. Unit - 102 A - 1.6 V - 340 ns - 5.3 µC - 31 A - 430 ns - 7.7 µC - 36 A 1. Pulse width is limited by safe operating area. 2. Pulse test: pulse duration = 300 μs, duty cycle 1.5%. DS12609 - Rev 1 page 4/13 STF36N60M6 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area ID (A) Figure 2. Thermal impedance GIPG050620181503SOA GC20521 K Operation in this area is limited by R DS(on) δ=0.5 0.2 10 2 10-1 0.05 0.02 0.01 tp =10 µs 10 1 10 tp =100 µs TJ≤150 °C TC=25 °C VGS=10 V single pulse 0 10 -1 10 -1 10 0 10-2 tp =10 ms 10 1 ID (A) VDS (V) 10 2 VGS = 9, 10V 4 6 8 GADG220320170910TCH VDS = 18V 20 VGS = 5V 10 12 14 16 VDS (V) Figure 5. Gate charge vs gate-source voltage VGS (V) GADG030220171159QVG VDS (V) VDD = 480 V ID = 30 A 12 0 3 500 89 8 400 87 6 300 85 4 200 83 2 100 81 0 Q g (nC) 79 0 20 30 40 50 5 6 7 8 9 VGS (V) GADG010220171211RID RDS(on) mΩ 91 VDS 4 Figure 6. Static drain-source on-resistance 600 10 tp(s) 40 VGS = 6V 2 Ƭ 10-0 60 VGS = 7V 20 10-1 100 VGS = 8V 40 0 0 10-2 80 60 10 10-3 ID (A) 80 0 0 tp 10-3 10-4 Figure 4. Transfer characteristics GADG220320170910OCH 100 Zth= K*R thJ-c δ =t p/Ƭ Single pulse tp =1 ms Figure 3. Output characteristics DS12609 - Rev 1 0.1 VGS =10 V 5 10 15 20 25 30 ID (A) page 5/13 STF36N60M6 Electrical characteristics (curves) Figure 8. Normalized gate threshold voltage vs temperature Figure 7. Capacitance variations C (pF) GADG220320170921CVR VGS(th) (norm.) 104 GIPG300920151316VTH ID = 250 µA 1.1 CISS 103 1.0 0.9 102 COSS f= 1MHz 0.8 101 CRSS 0.7 100 10-1 100 101 VDS (V) 102 Figure 9. Normalized on-resistance vs temperature RDS(on) (norm.) GIPG300920151317RON VGS = 10 V 0.6 -75 25 75 V(BR)DSS (norm.) GIPG300920151318BDV ID = 1 mA 1.00 1.4 1.0 0.96 0.6 0.92 -25 25 75 125 TJ (°C) Figure 11. Output capacitance stored energy EOSS (µJ) GADG010220171214EOS 0.88 -75 -25 25 75 125 TJ (°C) Figure 12. Source-drain diode forward characteristics VSD (V) GADG010220171212SDF 1.1 16 TJ = -50 °C 1.0 12 TJ = 25 °C 0.9 0.8 8 TJ = 150 °C 0.7 4 DS12609 - Rev 1 TJ (°C) 1.04 1.8 0 0 125 Figure 10. Normalized V(BR)DSS vs temperature 1.08 2.2 0.2 -75 -25 0.6 100 200 300 400 500 600 VDS (V) 0.5 0 5 10 15 20 25 30 ISD (A) page 6/13 STF36N60M6 Test circuits 3 Test circuits Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A B B 3.3 µF D G + VD 100 µH fast diode B Figure 16. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 18. Switching time waveform Figure 17. Unclamped inductive waveform ton V(BR)DSS td(on) VD toff td(off) tr tf 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS12609 - Rev 1 page 7/13 STF36N60M6 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS12609 - Rev 1 page 8/13 STF36N60M6 TO-220FP package information 4.1 TO-220 type A package information Figure 19. TO-220FP package outline 7012510_Rev_12_B DS12609 - Rev 1 page 9/13 STF36N60M6 TO-220FP package information Table 8. TO-220FP package mechanical data Dim. mm Min. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 DS12609 - Rev 1 Typ. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 page 10/13 STF36N60M6 Revision history Table 9. Document revision history DS12609 - Rev 1 Date Revision 02-Jul-2018 1 Changes First release. page 11/13 STF36N60M6 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 DS12609 - Rev 1 page 12/13 STF36N60M6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS12609 - Rev 1 page 13/13