STP3HNK90Z
STF3HNK90Z
N-channel 900V - 0.35Ω - 3A - TO-220 - TO-220FP
Zener-protected SuperMESH™ Power MOSFET
General features
Type
VDSS
(@Tjmax)
RDS(on)
ID
STP3HNK90Z
900 V
< 0.42 Ω
3A
STP3HNK90Z
900 V
< 0.42 Ω
3A
3
■
Extremely high dv/dt capability
■
100% avalanche tested
■
Gate charge minimized
■
Very low intrinsic capacitances
■
Very good manufacturing repeatibility
1
TO-220
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Applications
■
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TO-220FP
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Description
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Internal schematic diagram
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Switching application
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Orderocodes
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Part number
Marking
Package
Packaging
STP3HNK90Z
P3HNK90Z
TO-220
Tube
STF3HNK90Z
F3HNK90Z
TO-220FP
Tube
August 2006
Rev 3
1/15
www.st.com
15
Contents
STP3HNK90Z - STF3HNK90Z
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1
2
Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1
Electrical characteristics (curves)
............................ 7
3
Test circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
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STP3HNK90Z - STF3HNK90Z
1
Electrical ratings
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
STP3HNK90Z
VDS
VDGR
VGS
Unit
STF3HNK90Z
Drain-source voltage (VGS = 0)
800
V
Drain-gate voltage (RGS = 20KΩ)
800
V
Gate-source voltage
± 30
V
ID
Drain current (continuous) at TC = 25°C
3
3 (1)
A
ID
Drain current (continuous) at TC=100°C
1.89
1.89 (1)
A
A
IDM(2)
Drain current (pulsed)
12
12 (1)
PTOT
Total dissipation at TC = 25°C
90
25
Derating factor
0.2
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5ΚΩ)
dv/dt
(3)
VISO
TJ
Tstg
uc
0.72
3000
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Peak diode recovery voltage slope
4.5
P
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let
Insulation withstand voltage (DC)
Operating junction temperature
Storage temperature
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2500
W
W/°C
V
V/ns
V
-55 to 150
°C
Value
Unit
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1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤3A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.
Table 2.
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Thermal data
Symbol
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Rthj-case
Thermal resistance junction-case Max
TO-220
TO-220FP
1.38
5
°C/W
Rthj-a
Thermal resistance junction-ambient Max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
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Parameter
3/15
Electrical ratings
Table 3.
STP3HNK90Z - STF3HNK90Z
Avalanche characteristics
Symbol
Parameter
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
EAS
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
Table 4.
1.1
Unit
3
A
200
mJ
Gate-source zener diode
Symbol
BVGSO
Value
Parameter
Test conditions
Min.
Gate-source breakdown voltage Igs=± 1mA (Open Drain)
Typ.
Max.
30
Unit
V
Protection features of gate-to-source zener diodes
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The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
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STP3HNK90Z - STF3HNK90Z
2
Electrical characteristics
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5.
On/off states
Symbol
Parameter
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,
Tc = 125°C
IGSS
Gate body leakage current
VGS = ± 30V
(VGS = 0)
V(BR)DSS
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 50µA
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 1.5 A
Table 6.
Dynamic
Symbol
Parameter
Test conditions
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gfs (1)
Forward transconductance VDS =15V, ID = 1.5A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
Cosseq(2).
Equivalent output
capacitance
(s)
ct
Max.
Unit
900
3
V
1
50
µA
µA
±10
µA
3.75
4.5
V
3.5
4.2
Ω
Typ.
Max.
Unit
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Min.
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690
71
14.4
pF
pF
pF
VGS=0, VDS =0V to 720V
88
pF
23
28
42
27
ns
ns
ns
ns
so
VDS =25V, f=1 MHz, VGS=0
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VDD=450 V, ID= 1.5 A,
RG=4.7Ω, VGS=10V
(see Figure 18)
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=720V, ID = 3A
VGS =10V
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Typ.
S
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
u
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Min.
19
td(on)
tr
td(off)
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Test conditions
26
5.7
13.9
35
nC
nC
nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
5/15
Electrical characteristics
Table 7.
STP3HNK90Z - STF3HNK90Z
Source drain diode
Symbol
ISD
Test conditions
Min
Typ.
Max
Unit
Source-drain current
3
A
(1)
Source-drain current (pulsed)
12
A
(2)
Forward on voltage
ISD= 3 A, VGS=0
1.6
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=3 A,
di/dt = 100A/µs,
VDD=50V, Tj=25°C
(see Figure 20)
494
2.4
9.8
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=3A,
di/dt = 100A/µs,
VDD=50V, Tj=150°C
(see Figure 20)
628
3.2
10.2
ns
µC
A
ISDM
VSD
Parameter
trr
Qrr
IRRM
trr
Qrr
IRRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
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STP3HNK90Z - STF3HNK90Z
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area for TO-220
Figure 3.
Figure 2.
Safe operating area for TO-220FP
Figure 4.
Thermal impedance for TO-220
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Thermal impedance for TO-220FP
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Figure 5.
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Output characterisics
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Figure 6.
Transfer characteristics
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Electrical characteristics
STP3HNK90Z - STF3HNK90Z
Figure 7.
Transconductance
Figure 8.
Static drain-source on resistance
Figure 9.
Gate charge vs gate-source voltage Figure 10. Capacitance variations
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Figure 11. Normalized gate threshold voltage
vs temperature
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Figure 12. Normalized on resistance vs
temperature
STP3HNK90Z - STF3HNK90Z
Electrical characteristics
Figure 13. Source-drain diode forward
characteristics
Figure 14. Normalized BVDSS vs temperature
Figure 15. Maximum avalanche
energy vs temperature
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Test circuit
3
STP3HNK90Z - STF3HNK90Z
Test circuit
Figure 16. Unclamped Inductive load test
circuit
Figure 17. Unclamped Inductive waveform
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Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
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Figure 20. Test circuit for inductive load
switching and diode recovery times
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STP3HNK90Z - STF3HNK90Z
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
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Package mechanical data
STP3HNK90Z - STF3HNK90Z
TO-220 MECHANICAL DATA
mm.
DIM.
MIN.
TYP
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
0.551
L
13
14
0.511
L1
3.50
3.93
0.137
L20
0.154
16.40
L30
0.645
28.90
1.137
øP
3.75
3.85
0.147
Q
2.65
2.95
0.104
uc
0.116
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0.151
STP3HNK90Z - STF3HNK90Z
Package mechanical data
TO-220FP MECHANICAL DATA
mm.
DIM.
MIN.
A
4.4
inch
TYP
MAX.
MIN.
TYP.
4.6
0.173
0.181
MAX.
0.106
B
2.5
2.7
0.098
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
2.9
3.6
0.114
L6
15.9
16.4
0.626
L7
9
9.3
0.354
Ø
3
3.2
0.118
uc
0.366
d
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let
0.126
B
D
A
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0.141
0.645
E
L5
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L3
L6
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G1
G
F2
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F1
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L7
L2
L5
1 2 3
L4
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Revision history
5
STP3HNK90Z - STF3HNK90Z
Revision history
Table 8.
Revision history
Date
Revision
Changes
09-Sep-2004
2
Complete document
10-Aug-2006
3
New template, no content change
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STP3HNK90Z - STF3HNK90Z
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