STF40N65M2
N-channel 650 V, 0.087 Ω typ., 32 A MDmesh™ M2
Power MOSFET in a TO-220FP package
Datasheet - production data
Features
1
2
•
•
•
•
3
Order code
VDS
RDS(on) max.
ID
STF40N65M2
650 V
0.099 Ω
32 A
Extremely low gate charge
Excellent output capacitance (COSS) profile
100% avalanche tested
Zener-protected
Applications
TO-220FP
•
Figure 1: Internal schematic diagram
D(2)
Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
G(1)
S(3)
AM15572v1_no_tab
Table 1: Device summary
Order code
Marking
Package
Packaging
STF40N65M2
40N65M2
TO-220FP
Tube
February 2015
DocID027442 Rev 1
This is information on a product in full production.
1/13
www.st.com
Contents
STF40N65M2
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.2
Electrical characteristics (curves) ...................................................... 6
3
Test circuits ..................................................................................... 8
4
Package information ....................................................................... 9
4.1
5
2/13
TO-220FP package information ...................................................... 10
Revision history ............................................................................ 12
DocID027442 Rev 1
STF40N65M2
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
± 25
V
VGS
Gate-source voltage
(1)
ID
Drain current (continuous) at TC = 25 °C
32
A
(1)
ID
Drain current (continuous) at TC= 100 °C
20
A
(2)
IDM
Drain current (pulsed)
128
A
PTOT
Total dissipation at TC = 25 °C
25
W
dv/dt
(3)
Peak diode recovery voltage slope
15
V/ns
dv/dt
(4)
MOSFET dv/dt ruggedness
50
V/ns
2500
V
- 55 to
150
°C
VISO
Insulation withstand voltage (RMS) from all three leads to
external heat sink (t = 1 s; TC = 25 °C)
Tstg
Storage temperature
Tj
Max. operating junction temperature
150
Notes:
(1)
(2)
Limited by maximum junction temperature.
Pulse width limited by safe operating area.
(3)
ISD ≤ 32 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V
(4)
VDS ≤ 520 V
Table 3: Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max
3.13
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.50
°C/W
Value
Unit
Table 4: Avalanche characteristics
Symbol
Parameter
IAR
Avalanche current, repetetive or not repetetive (pulse width
limited by Tjmax)
3
A
EAS
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR,
VDD = 50 V)
820
mJ
DocID027442 Rev 1
3/13
Electrical characteristics
2
STF40N65M2
Electrical characteristics
(TC= 25 °C unless otherwise specified)
Table 5: On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
IDSS
Zero gate voltage Drain
current
IGSS
VGS = 0 V, ID = 1 mA
Min.
Typ.
Max.
650
Unit
V
VGS = 0 V, VDS = 650 V
1
µA
VGS = 0 V, VDS = 650 V,
TC = 125 °C
100
µA
Gate-body leakage current
VDS = 0 V, VGS = ± 25 V
±10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
3
4
V
RDS(on)
Static drain-source onresistance
VGS = 10 V, ID = 16 A
0.087
0.099
Ω
Min.
Typ.
Max.
Unit
-
2355
-
pF
-
102
-
pF
-
2.7
-
pF
2
Table 6: Dynamic
Symbol
Parameter
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Test conditions
VDS= 100 V, f = 1 MHz,
VGS = 0 V
Equivalent output
capacitance
VDS = 0 V to 520 V, VGS = 0 V
-
380
-
pF
RG
Intrinsic gate resistance
f = 1 MHz open drain
-
4.5
-
Ω
Qg
Total gate charge
-
56.5
-
nC
Qgs
Gate-source charge
-
8
-
nC
Qgd
Gate-drain charge
-
24
-
nC
Coss eq.
(1)
VDD = 520 V, ID = 32 A,
VGS = 10 V (see Figure 15:
"Gate charge test circuit")
Notes:
(1)
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/13
DocID027442 Rev 1
STF40N65M2
Electrical characteristics
Table 7: Switching times
Symbol
td(on)
tr
Parameter
Turn-on delay time
Rise time
td(off)
tf
Turn-off-delay time
Fall time
Test conditions
Min.
Typ.
Max.
Unit
VDD = 325 V, ID = 16 A
RG = 4.7 Ω, VGS = 10 V (see
Figure 14: "Switching times
test circuit for resistive load"
and Figure 19: "Switching time
waveform")
-
15
-
ns
-
10
-
ns
-
96.5
-
ns
-
12
-
ns
Min.
Typ.
Max.
Unit
Table 8: Source drain diode
Symbol
ISD
Parameter
Test conditions
Source-drain current
-
32
A
(1)
Source-drain current
(pulsed)
-
128
A
(2)
Forward on voltage
VGS = 0 V, ISD = 32 A
-
1.6
V
trr
Reverse recovery time
-
468
ns
Qrr
Reverse recovery charge
-
8.7
µC
IRRM
Reverse recovery current
ISD = 32 A, di/dt = 100 A/µs,
VDD = 60 V (see Figure 16: "
Test circuit for inductive load
switching and diode recovery
times")
-
37.5
A
-
610
ns
-
11.7
µC
-
39
A
ISDM
VSD
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 32 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C (see
Figure 16: " Test circuit for
inductive load switching and
diode recovery times")
Notes:
(1)
(2)
Pulse width is limited by safe operating area
Pulse test: pulse duration = 300 µs, duty cycle 1.5%
DocID027442 Rev 1
5/13
Electrical characteristics
2.2
STF40N65M2
Electrical characteristics (curves)
Figure 2: Safe operating area
Figure 3: Thermal impedance
K
GC20521
δ = 0.5
δ = 0.2
δ = 0.1
10-1
10-2
δ = 0.05
δ = 0.02
δ = 0.01
Zth = K*Rthj-c
SINGLE PULSE
δ = tp / Ƭ
tp
Ƭ
-3
10
VGS = 6,7,8,9,10 V
100
Tp(s)
GIPG300120151715ALS
60
50
40
40
30
VGS = 20 V
30
VGS = 4 V
20
20
10
10
4
8
12
16
20
0
0
24 VDS (V)
Figure 6: Normalized gate threshold voltage
vs temperature
6/13
10-1
70
VGS = 5 V
50
0
0
10-2
ID
(A)
GIPG300120151500ALS
60
10-3
Figure 5: Transfer characteristics
Figure 4: Output characteristics
ID
(A)
70
10-4
2
4
6
8
VGS (V)
Figure 7: Normalized V(BR)DSS vs temperature
DocID027442 Rev 1
STF40N65M2
Electrical characteristics
Figure 8: Static drain-source on-resistance
Figure 9: Normalized on-resistance vs.
temperature
Figure 10: Gate charge vs. gate-source
voltage
Figure 11: Capacitance variations
Figure 12: Output capacitance stored energy
Figure 13: Source-drain diode forward
characteristics
DocID027442 Rev 1
7/13
Test circuits
3
STF40N65M2
Test circuits
Figure 14: Switching times test circuit for resistive
load
Figure 15: Gate charge test circuit
VDD
47 k Ω
12 V
1 kΩ
100 nF
I G = CONST
Vi ≤ V GS
100 Ω
D.U.T.
2.7 k Ω
2200 μ F
VG
47 k Ω
PW
1 kΩ
AM01469v 1
Figure 16: Test circuit for inductive load
switching and diode recovery times
A
A
D.U.T.
FAST
DIODE
B
B
Figure 17: Unclamped inductive load test circuit
A
D
G
S
25 Ω
L=100 µH
3.3
µF
B
1000
µF
D
G
RG
VDD
D.U.T.
S
AM01470v1
Figure 18: Unclamped inductive waveform
Figure 19: Switching time waveform
t on
V(BR)DSS
t d(on)
VD
toff
tr
t d(off)
tf
90%
90%
I DM
10%
ID
VDD
10%
0
VDD
VGS
AM01472v 1
8/13
DocID027442 Rev 1
0
10%
VDS
90%
AM01473v 1
STF40N65M2
4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
®
ECOPACK is an ST trademark.
DocID027442 Rev 1
9/13
Package information
4.1
STF40N65M2
TO-220FP package information
Figure 20: TO-220FP package outline
7012510_Rev_K_B
10/13
DocID027442 Rev 1
STF40N65M2
Package information
Table 9: TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
DocID027442 Rev 1
11/13
Revision history
5
STF40N65M2
Revision history
Table 10: Document revision history
12/13
Date
Revision
09-Feb-2014
1
DocID027442 Rev 1
Changes
First release.
STF40N65M2
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DocID027442 Rev 1
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