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STF40NF03L

STF40NF03L

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOT78

  • 描述:

    MOSFET N-CH 30V 23A TO-220FP

  • 数据手册
  • 价格&库存
STF40NF03L 数据手册
STF40NF03L STP40NF03L N-channel 30 V, 0.018 Ω, 40 A TO-220, TO-220FP STripFET™ Power MOSFET Features ■ Type VDSS RDS(on) max ID STF40NF03L 30 V 0.022 Ω 23 A STP40NF03L 30 V 0.022 Ω 40 A Low threshold device Application ■ 3 3 1 TO-220 2 1 2 TO-220FP Switching applications Description This Power MOSFET is the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Table 1. Figure 1. Internal schematic diagram Device summary Order codes Marking Package Packaging STF40NF03L F40NF03L TO-220FP Tube STP40NF03L P40NF03L TO-220 Tube February 2010 Doc ID 6794 Rev 8 1/14 www.st.com 14 Contents STF40NF03L, STP40NF03L Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 .............................................. 9 Doc ID 6794 Rev 8 STF40NF03L, STP40NF03L 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220 VDS Drain-source voltage (VGS = 0) VGS Gate- source voltage TO-220FP 30 V ± 16 V ID Drain current (continuous) at TC = 25 °C 40 23 A ID Drain current (continuous) at TC = 100 °C 28 16 A Drain current (pulsed) 160 92 A Total dissipation at TC = 25 °C 70 25 W IDM(1) Ptot Derating factor VISO EAS (2) Tstg Tj 0.46 Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) W/°C 2500 Single pulse avalanche energy V 250 mJ -55 to 175 °C Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area. 2. Starting Tj = 25 °C, ID = 20 A, VDD = 15 V Table 3. Thermal data Value Symbol Parameter Package TO-220 Rthj-c TJ Max. 1.8 2.1 Thermal resistance junction-case °C/W TO-220FP Rthj-amb Unit Typ. 6 Thermal resistance junction-ambient max 62.5 °C/W Maximum lead temperature for soldering purpose 300 °C Doc ID 6794 Rev 8 3/14 Electrical characteristics 2 STF40NF03L, STP40NF03L Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage ID = 250 µA, VGS =0 IDSS Zero gate voltage drain current (VGS = 0) VDS = max ratings VDS = max ratings, TC = 125 °C IGSS Gate-body leakage current (VDS = 0) VGS = ±16 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 20 A Table 5. Symbol Typ. Max. 30 Unit V 1 10 µA µA ±100 nA 1.7 2.5 V 0.018 0.028 0.022 0.035 Ω Ω Min. Typ. Max. Unit 1 Dynamic Parameter Test conditions gfs (1) Forward transconductance VDS = 10 V, ID = 20 A - 20 - S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 - 770 255 60 - pF pF pF td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 15 V, ID = 20 A RG = 4.7 Ω VGS = 4.5 V (see Figure 16) - 14 80 25 16 - ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 15 V, ID = 40 A, VGS = 4.5 V (see Figure 17) - 10.5 4 4.5 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. 4/14 Min. Doc ID 6794 Rev 8 15 nC nC nC STF40NF03L, STP40NF03L Table 6. Symbol Electrical characteristics Source drain diode Parameter ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD trr Qrr IRRM Test conditions ISD = 40 A, VGS = 0 ISD = 40 A, Reverse recovery time di/dt = 100 A/µs, Reverse recovery charge VDD = 15 V, Tj = 150 °C Reverse recovery current (see Figure 18) Min. Max. Unit - 40 160 A A - 1.5 V - Typ. 34.5 30 2 ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Doc ID 6794 Rev 8 5/14 Electrical characteristics STF40NF03L, STP40NF03L 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 7. Transfer characteristics AM03797v1 ID (A) 100 10 s ai are (on) s i S D th in x R ion ma rat by e Op ited Lim 100µs 1ms 10ms 1 0.1 0.01 0.1 Figure 6. 6/14 Tj=175°C Tc=25°C Sinlge pulse 1 10 Output characteristics VDS(V) Doc ID 6794 Rev 8 STF40NF03L, STP40NF03L Figure 8. Electrical characteristics Transconductance Figure 9. Static drain-source on resistance Figure 10. Gate charge vs. gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs. temperature Figure 13. Normalized on resistance vs. temperature Doc ID 6794 Rev 8 7/14 Electrical characteristics Figure 14. Source-drain diode forward characteristics 8/14 STF40NF03L, STP40NF03L Figure 15. Normalized BVDSS vs. temperature Doc ID 6794 Rev 8 STF40NF03L, STP40NF03L 3 Test circuits Test circuits Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test switching and diode recovery times circuit Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform Doc ID 6794 Rev 8 9/14 Package mechanical data 4 STF40NF03L, STP40NF03L Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/14 Doc ID 6794 Rev 8 STF40NF03L, STP40NF03L Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Doc ID 6794 Rev 8 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 11/14 Package mechanical data STF40NF03L, STP40NF03L TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.5 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_J 12/14 Doc ID 6794 Rev 8 STF40NF03L, STP40NF03L 5 Revision history Revision history Table 7. Document revision history Date Revision Changes 09-Sep-2004 1 Preliminary version 21-Jun-2005 2 Complete version with curves 16-Aug-2006 3 New template, no content change 21-Feb-2007 4 Typo mistake on page 1 20-Nov-2008 5 Figure 9: Static drain-source on resistance has been corrected. 14-Apr-2009 6 The device in TO-220FP has been added 03-Feb-2010 7 Updated Table 3: Thermal data. 22-Feb-2010 8 Updated Table 3: Thermal data. Doc ID 6794 Rev 8 13/14 STF40NF03L, STP40NF03L Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 Doc ID 6794 Rev 8
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