STB45N65M5, STF45N65M5, STP45N65M5
N-channel 650 V, 0.067 Ω typ., 35 A MDmesh™ V Power MOSFET
in D2PAK, TO-220FP and TO-220 packages
Datasheet − production data
Features
TAB
Order codes
2
3
1
1
ID
STB45N65M5
3
D2PAK
VDSS @ TJmax RDS(on) max
2
STF45N65M5
TO-220FP
0.078 Ω
710 V
35 A
STP45N65M5
TAB
• Worldwide best RDS(on) * area
• Higher VDSS rating and high dv/dt capability
3
1
• Excellent switching performance
2
• 100% avalanche tested
TO-220
Figure 1. Internal schematic diagram
Applications
• Switching applications
$4!"
Description
'
3
!-V
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1. Device summary
Order codes
Marking
Package
Packaging
D2PAK
Tape and reel
STB45N65M5
STF45N65M5
45N65M5
TO-220FP
Tube
STP45N65M5
March 2013
This is information on a product in full production.
TO-220
DocID022854 Rev 4
1/20
www.st.com
20
Contents
STB45N65M5, STF45N65M5, STP45N65M5
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
2/20
.............................................. 9
DocID022854 Rev 4
STB45N65M5, STF45N65M5, STP45N65M5
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
Unit
D2PAK
TO-220FP
TO-220
Gate-source voltage
VGS
ID
Drain current (continuous) at TC = 25 °C
ID
IDM
± 25
35
Drain current (continuous) at TC = 100 °C
(1)
PTOT
V
22
Drain current (pulsed)
140
Total dissipation at TC = 25 °C
210
35
(1)
A
22
(1)
A
140
(1)
40
A
W
dv/dt
(2)
Peak diode recovery voltage slope
15
V/ns
dv/dt
(3)
MOSFET dv/dt ruggedness
50
V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
Tstg
Storage temperature
Tj
2500
Max. operating junction temperature
V
- 55 to 150
°C
150
°C
1. Limited by maximum junction temperature.
2. ISD
≤ 35 A, di/dt ≤ 400 A/µs, VDS(Peak) < V(BR)DSS, VDD = 400 V
3. VDS
≤ 480 V
Table 3. Thermal data
Value
Symbol
Parameter
Unit
D2PAK
TO-220FP
TO-220
3.13
0.60
Rthj-case
Thermal resistance junction-case max
0.60
Rthj-pcb(1)
Thermal resistance junction-pcb max
30
Rthj-amb
Thermal resistance junction-ambient max
°C/W
°C/W
62.5
°C/W
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetetive or not repetetive
(pulse width limited by Tjmax )
9
A
EAS
Single pulse avalanche energy (starting tj=25°C,
Id= IAR; Vdd=50)
810
mJ
DocID022854 Rev 4
3/20
Electrical characteristics
2
STB45N65M5, STF45N65M5, STP45N65M5
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
V(BR)DSS
Parameter
Drain-source
breakdown voltage
Test conditions
ID = 1 mA, VGS = 0
IDSS
Zero gate voltage
VDS = 650 V
drain current (VGS = 0) VDS = 650 V, TC=125 °C
IGSS
Gate-body leakage
current (VDS = 0)
Min.
Typ.
650
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source
on-resistance
Unit
V
1
100
µA
µA
± 100
nA
4
5
V
0.067
0.078
Ω
Min.
Typ.
Max.
Unit
-
3470
82
7
-
pF
pF
pF
-
280
-
pF
-
79
-
pF
-
2
-
Ω
-
82
18.5
35
-
nC
nC
nC
VGS = ± 25 V
VGS(th)
Max.
3
VGS = 10 V, ID = 17.5 A
Table 6. Dynamic
Symbol
Ciss
Coss
Crss
Co(tr)(1)
Co(er)
(2)
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Test conditions
VDS = 100 V, f = 1 MHz,
VGS = 0
Equivalent
capacitance time
related
Equivalent
capacitance energy
related
VDS = 0 to 520 V, VGS = 0
RG
Intrinsic gate
resistance
f = 1 MHz open drain
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 520 V, ID = 17.5 A,
VGS = 10 V
(see Figure 18)
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
4/20
DocID022854 Rev 4
STB45N65M5, STF45N65M5, STP45N65M5
Electrical characteristics
Table 7. Switching times
Symbol
td (v)
tr (v)
tf (i)
tc(off)
Parameter
Test conditions
Voltage delay time
Voltage rise time
Current fall time
Crossing time
VDD = 400 V, ID = 23 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 19 and
Figure 22)
Min.
Typ.
-
79.5
11
9.3
16
Min.
Typ.
Max
Unit
-
ns
ns
ns
ns
Table 8. Source drain diode
Symbol
Parameter
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
trr
Qrr
IRRM
trr
Qrr
IRRM
Test conditions
Max. Unit
-
35
140
A
A
ISD = 35 A, VGS = 0
-
1.5
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 35 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 19)
-
392
7.4
38
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 35 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 19)
-
468
9.7
42
ns
µC
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID022854 Rev 4
5/20
Electrical characteristics
2.1
STB45N65M5, STF45N65M5, STP45N65M5
Electrical characteristics (curves)
Figure 2. Safe operating area for D²PAK and TO220
Figure 3. Thermal impedance for D²PAK and
TO-220
AM13077v1
ID
(A)
Tj=150°C
Tc=25°C
Single pulse
100
is
ea )
ar S(on
is D
th R
x
in
n ma
o
y
ti
ra d b
e
e
p
O imit
L
10
10µs
100µs
1ms
10ms
1
0.1
0.1
10
1
100
VDS(V)
Figure 4. Safe operating area TO220FP
Figure 5. Thermal impedance for TO-220FP
AM13078v1
ID
(A)
Tj=150°C
Tc=25°C
Single pulse
100
is
ea
ar (on)
s
S
i
th RD
in ax
ion y m
t
a
er d b
Op mite
Li
10
10µs
100µs
1ms
1
10ms
0.1
0.01
0.1
1
10
100
VDS(V)
Figure 6. Output characteristics
Figure 7. Transfer characteristics
AM13080v1
ID (A)
90
80
70
70
60
60
50
50
40
40
30
30
20
6V
10
0
0
VDS=25V
90
80
7V
6/20
AM13081v1
ID (A)
VGS=10V
20
10
5
10
15
20
VDS(V)
DocID022854 Rev 4
0
3
4
5
6
7
8
9
VGS(V)
STB45N65M5, STF45N65M5, STP45N65M5
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
AM13082v1
VDS
VGS
(V)
VDS
VDD=520V
ID=17.5A
12
10
Figure 9. Static drain-source on-resistance
(V)
RDS(on)
(Ω)
500
0.071
400
0.069
300
0.067
200
0.065
100
0.063
AM13083v1
VGS=10V
8
6
4
2
0
0
40
20
60
80
100
0
Qg(nC)
Figure 10. Capacitance variations
15
10
5
20
25
ID(A)
Figure 11. Output capacitance stored energy
AM13084v1
C
(pF)
0.061
0
AM13085v1
Eoss (µJ)
16
10000
14
Ciss
1000
12
10
8
100
Coss
4
10
1
0.1
6
Crss
1
100
10
0
0
VDS(V)
Figure 12. Normalized gate threshold voltage
vs. temperature
AM05459v2
VGS(th)
(norm)
1.10
2
ID=250µA
100
200 300
400 500 600
VDS(V)
Figure 13. Normalized on resistance vs.
temperature
AM05460v2
RDS(on)
(norm)
2.1
VGS=10V
ID=17.5V
1.9
1.00
1.7
1.5
1.3
0.90
1.1
0.9
0.80
0.7
0.70
-50 -25
0
25
50
75 100
TJ(°C)
0.5
-50 -25
DocID022854 Rev 4
0
25
50
75 100
TJ(°C)
7/20
Electrical characteristics
STB45N65M5, STF45N65M5, STP45N65M5
Figure 14. Drain-source diode forward
characteristics
AM05461v1
VSD
(V)
Figure 15. Normalized VDS vs. temperature
AM10399v1
VDS
(norm)
TJ=-50°C
1.08
1.2
ID = 1mA
1.06
1.0
1.04
0.8
1.02
TJ=25°C
1.00
0.6
TJ=150°C
0.98
0.4
0.96
0.2
0
0.94
0
10
30
20
40
50 ISD(A)
0.92
-50 -25
Figure 16. Switching losses vs. gate
resistance (1)
E
(μJ)
600
AM13086v1
Eon
ID=23A
VDD=400V
VGS=10V
500
400
Eoff
300
200
100
0
0
10
20
30
40
RG(Ω)
1. Eon including reverse recovery of a SiC diode
8/20
DocID022854 Rev 4
0
25
50
75 100
TJ(°C)
STB45N65M5, STF45N65M5, STP45N65M5
3
Test circuits
Test circuits
Figure 17. Switching times test circuit for
resistive load
Figure 18. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
Figure 19. Test circuit for inductive load
switching and diode recovery times
A
A
D.U.T.
FAST
DIODE
B
B
AM01469v1
Figure 20. Unclamped inductive load test circuit
L
A
D
G
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 21. Unclamped inductive waveform
V(BR)DSS
Figure 22. Switching time waveform
Concept waveform for Inductive Load Turn-off
Id
VD
90%Vds
90%Id
Tdelay-off
-off
IDM
Vgs
90%Vgs
on
ID
Vgs(I(t))
))
VDD
VDD
10%Id
10%Vds
Vds
Trise
AM01472v1
DocID022854 Rev 4
Tfall
Tcross --over
AM05540v2
9/20
Package mechanical data
4
STB45N65M5, STF45N65M5, STP45N65M5
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
10/20
DocID022854 Rev 4
STB45N65M5, STF45N65M5, STP45N65M5
Package mechanical data
Table 9. D²PAK (TO-263) mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
A1
0.03
0.23
b
0.70
0.93
b2
1.14
1.70
c
0.45
0.60
c2
1.23
1.36
D
8.95
9.35
D1
7.50
E
10
E1
8.50
10.40
e
2.54
e1
4.88
5.28
H
15
15.85
J1
2.49
2.69
L
2.29
2.79
L1
1.27
1.40
L2
1.30
1.75
R
V2
0.4
0°
8°
DocID022854 Rev 4
11/20
Package mechanical data
STB45N65M5, STF45N65M5, STP45N65M5
Figure 23. D²PAK (TO-263) drawing
0079457_T
Figure 24. D²PAK footprint(a)
16.90
12.20
5.08
1.60
3.50
9.75
a. All dimensions are in millimeters
12/20
DocID022854 Rev 4
Footprint
STB45N65M5, STF45N65M5, STP45N65M5
Package mechanical data
Table 10. TO-220FP mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
DocID022854 Rev 4
13/20
Package mechanical data
STB45N65M5, STF45N65M5, STP45N65M5
Figure 25. TO-220FP drawing
7012510_Rev_K_B
14/20
DocID022854 Rev 4
STB45N65M5, STF45N65M5, STP45N65M5
Package mechanical data
Table 11. TO-220 type A mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.40
4.60
b
0.61
0.88
b1
1.14
1.70
c
0.48
0.70
D
15.25
15.75
D1
1.27
E
10
10.40
e
2.40
2.70
e1
4.95
5.15
F
1.23
1.32
H1
6.20
6.60
J1
2.40
2.72
L
13
14
L1
3.50
3.93
L20
16.40
L30
28.90
∅P
3.75
3.85
Q
2.65
2.95
DocID022854 Rev 4
15/20
Package mechanical data
STB45N65M5, STF45N65M5, STP45N65M5
Figure 26. TO-220 type A drawing
0015988_typeA_Rev_S
16/20
DocID022854 Rev 4
STB45N65M5, STF45N65M5, STP45N65M5
5
Packaging mechanical data
Packaging mechanical data
Table 12. D²PAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
A0
10.5
10.7
A
B0
15.7
15.9
B
1.5
D
1.5
1.6
C
12.8
D1
1.59
1.61
D
20.2
E
1.65
1.85
G
24.4
F
11.4
11.6
N
100
K0
4.8
5.0
T
P0
3.9
4.1
P1
11.9
12.1
Base qty
1000
P2
1.9
2.1
Bulk qty
1000
R
50
T
0.25
0.35
W
23.7
24.3
DocID022854 Rev 4
Min.
Max.
330
13.2
26.4
30.4
17/20
Packaging mechanical data
STB45N65M5, STF45N65M5, STP45N65M5
Figure 27. Tape for D²PAK (TO-263)
10 pitches cumulative
tolerance on tape +/- 0.2 mm
T
P0
Top cover
tape
P2
D
E
F
W
K0
B0
A0
P1
D1
User direction of feed
R
Bending radius
User direction of feed
AM08852v2
Figure 28. Reel for D²PAK (TO-263)
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
Full radius
Tape slot
in core for
tape start 25 mm min.
width
G measured at hub
AM08851v2
18/20
DocID022854 Rev 4
STB45N65M5, STF45N65M5, STP45N65M5
6
Revision history
Revision history
Table 13. Document revision history
Date
Revision
Changes
22-Feb-2012
1
First release.
28-Aug-2012
2
Document status promoted from preliminary data to production data.
Inserted Section 2.1: Electrical characteristics (curves).
05-Dec-2012
3
The part number STW45N65M5 has been moved to a separate
datasheet.
05-Mar-2013
4
– Added dv/dt value on Table 2: Absolute maximum ratings
– Minor text changes
DocID022854 Rev 4
19/20
STB45N65M5, STF45N65M5, STP45N65M5
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DocID022854 Rev 4