STF46N60M6

STF46N60M6 Datasheet N-channel 600 V, 68 mΩ typ., 36 A, MDmesh M6 Power MOSFET in a TO‑220FP package Features 1 2 3 TO-220FP D(2) Order code VDS RDS(on) max. ID STF46N60M6 600 V 80 mΩ 36 A • • Reduced switching losses Lower RDS(on) per area vs previous generation • • • Low gate input resistance 100% avalanche tested Zener-protected Applications • • • G(1) Switching applications LLC converters Boost PFC converters Description S(3) AM15572v1_no_tab The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Product status link STF46N60M6 Product summary Order code STF46N60M6 Marking 46N60M6 Package TO-220FP Packing Tube DS13019 - Rev 2 - November 2019 For further information contact your local STMicroelectronics sales office. www.st.com STF46N60M6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Gate-source voltage ±25 V Drain current (continuous) at Tcase = 25 °C 36 Drain current (continuous) at Tcase = 100 °C 23 IDM(2) Drain current (pulsed) 126 A PTOT Total power dissipation at Tcase = 25 °C 42 W dv/dt (3) Peak diode recovery voltage slope 15 dv/dt(4) MOSFET dv/dt ruggedness 100 VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) 2.5 kV Tstg Storage temperature range -55 to 150 °C Value Unit 3 °C/W 62.5 °C/W Value Unit 5.2 A 760 mJ VGS ID (1) Tj Parameter Operating junction temperature range A V/ns 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 36 A, di/dt ≤ 400 A/μs; VDS(peak) < V(BR)DSS, VDD = 400 V. 4. VDS ≤ 480 V Table 2. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-ambient Table 3. Avalanche characteristics Symbol IAR EAS DS13019 - Rev 2 Parameter Avalanche current, repetitive or non-repetitive (pulse width limited by TJmax) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) page 2/12 STF46N60M6 Electrical characteristics 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0 V, ID = 1 mA Min. Typ. 600 Zero gate voltage drain current IGSS 1 VGS = 0 V, VDS = 600 V, Tcase = 125 100 °C(1) Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 18 A Unit V VGS = 0 V, VDS = 600 V IDSS Max. µA ±5 µA 4 4.75 V 68 80 mΩ Min. Typ. Max. Unit - 2340 - - 147 - - 3.7 - 3.25 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 V Reverse transfer capacitance (1) pF Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 339 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 A - 1.6 - Ω Qg Total gate charge VDD = 480 V, ID = 36 A, - 53.5 - Qgs Gate-source charge VGS = 0 to 10 V - 15.5 - Gate-drain charge (see Figure 14. Test circuit for gate charge behavior) - 23.5 - Coss eq. Qgd nC 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol td(on) tr td(off) tf DS13019 - Rev 2 Parameter Test conditions Min. Typ. Max. Turn-on delay time VDD = 300 V, ID = 18 A, - 20 - Rise time RG = 4.7 Ω, VGS = 10 V - 15.5 - Turn-off delay time (see Figure 13. Test circuit for resistive load switching times and Figure 18. Switching time waveform) - 48.4 - - 8.5 - Fall time Unit ns page 3/12 STF46N60M6 Electrical characteristics Table 7. Source-drain diode Symbol ISD (1) ISDM (2) VSD (3) Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 36 A Source-drain current (pulsed) - 126 A 1.6 V Forward on voltage ISD = 36 A, VGS = 0 V - trr Reverse recovery time ISD = 36 A, di/dt = 100 A/µs, - 267 ns Qrr Reverse recovery charge VDD = 60 V - 2.8 µC IRRM Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 20.8 A - 440 ns - 5.8 µC - 26.4 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 36 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 15. Test circuit for inductive load switching and diode recovery times) 1. Limited by maximum junction temperature. 2. Pulse width is limited by safe operating area. 3. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DS13019 - Rev 2 page 4/12 STF46N60M6 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 2. Maximum transient thermal impedance Figure 1. Safe operating area ID (A) Zthj-c (°C/W) GADG121120191132SOA IDM tp = 1µs ea ar TC = 25 °C TJ ≤ 150°C VGS = 10 V Single pulse 10 -1 10 -1 10 0 10 1 tp = 100µs tp = 10ms VGS = 9, 10 V 10-3 10-6 VGS = 8 V 10-4 10-3 10-2 tp (s) 10-1 Figure 4. Typical transfer characteristics GADG280120191025TCH VDS = 16 V 100 80 VGS = 7 V 60 40 40 20 VGS = 6 V 3 6 9 12 15 18 VDS (V) Figure 5. Typical gate charge characteristics 20 0 4 RDS(on) (mΩ) 12 74 10 72 8 70 300 6 68 200 4 66 100 2 64 GADG280120191025QVG VGS VDD = 480 V ID = 36 A 600 Qg 500 VDS Qgd Qgs 10 20 30 40 50 60 0 Qg (nC) 5 6 7 8 9 VGS (V) Figure 6. Typical drain-source on-resistance (V) VDS (V) DS13019 - Rev 2 ton T 10-5 120 60 0 0 duty = ton / T ID (A) 80 400 RthJ-C = 3 °C/W 10-2 Single pulse VDS (V) 10 2 100 0 0 0.2 0.1 0.05 V(BR)DSS GADG280120191024OCH 120 10-1 tp = 1ms Figure 3. Typical output characteristics ID (A) 100 tp = 10µs is n) th S(o in R D n y tio b ra ted RDS(on) max. pe imi O l is 10 0 0.3 0.4 duty=0.5 10 2 10 1 GADG121120191139ZTH 62 0 GADG280120191022RID VGS =10 V 6 12 18 24 30 36 ID (A) page 5/12 STF46N60M6 Electrical characteristics (curves) Figure 7. Typical capacitance characteristics C (pF) Figure 8. Normalized gate threshold vs temperature VGS(th) (norm.) GADG280120191024CVR GADG191220180856VTH 1.1 10 4 CISS 1.0 10 3 0.9 10 2 COSS f = 1 MHz 10 1 10 0 10 -1 10 0 CRSS 10 1 VDS (V) 10 2 Figure 9. Normalized on-resistance vs temperature RDS(on) (norm.) GADG191220180856RON 0.8 0.7 0.6 -75 2.0 1.05 0.95 0.5 0.90 -25 25 75 125 Tj (°C) Figure 11. Typical output capacitance stored energy EOSS (µJ) Tj (°C) GADG191220180856BDV ID = 1 mA 0.85 -75 -25 25 75 125 Tj (°C) Figure 12. Typical reverse diode forward characteristics VSD (V) GADG280120191023SDF 1.1 15 Tj = -50 °C 1.0 12 Tj = 25 °C 0.9 9 0.8 6 Tj = 150 °C 0.7 3 DS13019 - Rev 2 125 GIPD280120191305EOS 18 0 0 75 1.00 1.0 0.0 -75 25 V(BR)DSS (norm.) 1.10 VGS = 10 V -25 Figure 10. Normalized breakdown voltage vs temperature 2.5 1.5 ID = 250 µA 0.6 100 200 300 400 500 600 VDS (V) 0.5 0 6 12 18 24 30 36 ISD (A) page 6/12 STF46N60M6 Test circuits 3 Test circuits Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior VDD RL RL 2200 + μF 3.3 μF VDD VD IG= CONST VGS + pulse width RG VGS D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v10 AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A VD 100 µH fast diode B B B 3.3 µF D G + Figure 16. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 18. Switching time waveform Figure 17. Unclamped inductive waveform ton V(BR)DSS td(on) toff td(off) tr tf VD 90% 90% IDM VDD 10% 0 ID VDD AM01472v1 VGS 0 VDS 10% 90% 10% AM01473v1 DS13019 - Rev 2 page 7/12 STF46N60M6 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-220FP package information Figure 19. TO-220FP package outline 7012510_Rev_13_B DS13019 - Rev 2 page 8/12 STF46N60M6 TO-220FP package information Table 8. TO-220FP package mechanical data Dim. mm Min. Max. A 4.40 4.60 B 2.50 2.70 D 2.50 2.75 E 0.45 0.70 F 0.75 1.00 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.20 G1 2.40 2.70 H 10.00 10.40 L2 DS13019 - Rev 2 Typ. 16.00 L3 28.60 30.60 L4 9.80 10.60 L5 2.90 3.60 L6 15.90 16.40 L7 9.00 9.30 Dia 3.00 3.20 page 9/12 STF46N60M6 Revision history Table 9. Document revision history Date Version Changes 10-May-2019 1 Initial release. 20-Nov-2019 2 Updated Section 1 Electrical ratings, Section 2 Electrical characteristics and Section 2.1 Electrical characteristics (curves). Minor text changes. DS13019 - Rev 2 page 10/12 STF46N60M6 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 DS13019 - Rev 2 page 11/12 STF46N60M6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS13019 - Rev 2 page 12/12