STF57N65M5

STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5 N-channel 650 V, 0.056 Ω typ., 42 A MDmesh™ V Power MOSFET in I²PAK, TO-220, TO-220FP and D²PAK packages Datasheet — production data Features TAB Order codes VDSS @ TJmax STB57N65M5 STF57N65M5 STI57N65M5 STP57N65M5 RDS(on) max ID 3 1 3 D²PAK 710 V < 0.063 Ω TO-220FP 42 A TAB ■ Worldwide best RDS(on)*area amongst the silicon based devices ■ Higher VDSS rating, high dv/dt capability ■ Excellent switching performance ■ Easy to drive, 100% avalanche tested 2 1 TAB 3 12 3 1 I²PAK Figure 1. 2 TO-220 Internal schematic diagram Applications ■ $4!" Switching applications Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. ' 3 !-V Device summary Order codes STB57N65M5 STF57N65M5 STI57N65M5 STP57N65M5 December 2012 This is information on a product in full production. Marking Packages Packaging 57N65M5 D²PAK TO-220FP I²PAK TO-220 Tape and reel Tube Tube Tube Doc ID 022849 Rev 4 1/22 www.st.com 22 Contents STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) .......................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 2/22 .............................................. 9 Doc ID 022849 Rev 4 STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220, D²PAK, I²PAK VGS ID ID IDM (2) PTOT Gate- source voltage TO-220FP ± 25 Drain current (continuous) at TC = 25 °C 42 Drain current (continuous) at TC = 100 °C 42 26.5 Drain current (pulsed) 168 Total dissipation at TC = 25 °C 250 V (1) A 26.5 (1) A 168 (1) A 40 W IAR Max current during repetitive or single pulse avalanche (pulse width limited by TJMAX) 11 A EAS Single pulse avalanche energy (starting Tj = 25°C, ID = IAR, VDD = 50V) 960 mJ Peak diode recovery voltage slope 15 V/ns dv/dt (3) VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature Tj 2500 Max. operating junction temperature V -55 to 150 °C 150 °C 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD ≤ 42 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS, VDD = 400 V Table 3. Thermal data Value Symbol Parameter Unit Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Rthj-pcb Thermal resistance junction-pcb max(1) D²PAK I²PAK TO-220 TO-220FP 0.50 3.1 °C/W 62.5 °C/W 62.5 30 °C/W 1. When mounted on 1inch² FR-4 board, 2 oz Cu. Doc ID 022849 Rev 4 3/22 Electrical characteristics 2 STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 650 V IDSS Zero gate voltage VDS = 650 V drain current (VGS = 0) VDS = 650 V, TC=125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) ±100 nA 4 5 V 0.056 0.063 Ω Min. Typ. Max. Unit VGS = ± 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on Static drain-source onVGS = 10 V, ID = 21 A resistance Table 5. Symbol 3 Dynamic Parameter Test conditions Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 100 V, f = 1 MHz, VGS = 0 - 4200 115 9 - pF pF pF Co(er)(1) Equivalent output capacitance energy related VGS = 0, VDS = 0 to 80% V(BR)DSS - 93 - pF Co(tr)(2) Equivalent output capacitance time related VGS = 0, VDS = 0 to 80% V(BR)DSS - 303 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 1.3 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 520 V, ID = 21 A, VGS = 10 V (see Figure 18) - 98 23 40 - nC nC nC 1. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS 2. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS 4/22 Doc ID 022849 Rev 4 STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5 Table 6. Symbol td(V) tr(V) tf(i) tc(off) Table 7. Switching times Parameter Test conditions Voltage delay time Voltage rise time Current fall time Crossing time VDD = 400 V, ID = 28 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19) Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage IRRM trr Qrr IRRM Min. Typ. - 73 15 12 19 Min. Typ. Max. Unit - ns ns ns ns Source drain diode Symbol trr Qrr Electrical characteristics Test conditions Max. Unit - 42 168 A A ISD = 42 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 42 A, di/dt = 100 A/µs VDD = 100 V (see Figure 19) - 418 8 40 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 42 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 19) - 528 12 44 ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 022849 Rev 4 5/22 Electrical characteristics STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for D²PAK, I²PAK and TO-220 Figure 3. Thermal impedance for D²PAK, I²PAK and TO-220 Figure 5. Thermal impedance for TO-220FP Figure 7. Transfer characteristics AM14703v1 ID (A) 100 is ea ) ar S(on is th RD in ax n it o y m b ra pe ed O mit i L 10 10µs 100µs 1ms Tj=150°C Tc=25°C 1 10ms Single pulse 0.1 0.1 Figure 4. 1 10 VDS(V) 100 Safe operating area for TO-220FP AM14704v1 ID (A) 100 is ea ) ar (on s DS i th x R in n ma tio by a r d pe te O imi L 10 10µs 100µs 1ms 1 10ms Tj=150°C Tc=25°C 0.1 Single pulse 0.01 0.1 Figure 6. ID (A) 1 10 VDS(V) 100 Output characteristics AM14706v1 VGS= 9, 10 V 100 80 VGS= 7 V 60 60 40 40 VGS= 6 V 20 6/22 VDS= 25 V 100 VGS= 8 V 80 0 0 AM14707v1 ID (A) 4 8 12 16 20 VDS(V) 0 3 Doc ID 022849 Rev 4 4 5 6 7 8 9 VGS(V) STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM14708v1 VGS (V) VDS (V) 500 VDD=520V 10 ID=21A VDS 8 400 6 300 Static drain-source on-resistance AM14709v1 RDS(on) (Ω) 0.062 VGS=10V 0.060 0.058 0.056 4 200 2 100 0 0 40 20 60 0 100 Qg(nC) 80 Figure 10. Capacitance variations 0.052 0.05 0 20 10 30 ID(A) Figure 11. Output capacitance stored energy AM14710v1 C (pF) 0.054 AM14711v1 Eoss (µJ) 18 16 10000 Ciss 1000 14 12 10 100 Coss 8 Crss 4 6 10 2 1 0.1 1 10 100 Figure 12. Normalized gate threshold voltage vs temperature AM05459v1 VGS(th) (norm) 1.10 0 0 VDS(V) ID = 250 µA 100 400 500 600 VDS(V) Figure 13. Normalized on-resistance vs temperature AM05460v1 RDS(on) (norm) 2.1 1.9 1.00 200 300 VGS= 10V ID= 21 A 1.7 1.5 1.3 0.90 1.1 0.9 0.80 0.7 0.70 -50 -25 0 25 50 75 100 TJ(°C) 0.5 -50 -25 Doc ID 022849 Rev 4 0 25 50 75 100 TJ(°C) 7/22 Electrical characteristics STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5 Figure 14. Source-drain diode forward characteristics Figure 15. Normalized BVDSS vs temperature AM05461v1 VSD (V) AM10399v1 VDS (norm) TJ=-50°C 1.08 1.2 ID = 1mA 1.06 1.0 1.04 0.8 1.02 TJ=25°C 1.00 0.6 TJ=150°C 0.98 0.4 0.96 0.2 0 0.94 0 10 30 20 40 50 ISD(A) 0.92 -50 -25 Figure 16. Switching losses vs gate resistance (1) AM14712v1 E (μJ) 800 Eon VDD=400V VGS=10V ID=28A 600 Eoff 400 200 0 0 10 20 30 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode 8/22 Doc ID 022849 Rev 4 0 25 50 75 100 TJ(°C) STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5 3 Test circuits Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 21. Unclamped inductive waveform V(BR)DSS AM01471v1 Figure 22. Switching time waveform Concept waveform for Inductive Load Turn-off Id VD 90%Vds 90%Id Tdelay-off -off IDM Vgs 90%Vgs on ID Vgs(I(t)) )) VDD VDD 10%Id 10%Vds Vds Trise AM01472v1 Doc ID 022849 Rev 4 Tfall Tcross --over AM05540v2 9/22 Package mechanical data 4 STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 8. D²PAK (TO-263) mechanical data mm Dim. Min. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 10/22 Typ. 0.4 0° 8° Doc ID 022849 Rev 4 STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5 Package mechanical data Figure 23. D²PAK (TO-263) drawing 0079457_T Figure 24. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 Footprint a. All dimension are in millimeters Doc ID 022849 Rev 4 11/22 Package mechanical data Table 9. STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5 TO-220FP mechanical data mm Dim. Min. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 12/22 Typ. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 Doc ID 022849 Rev 4 STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5 Package mechanical data Figure 25. TO-220FP drawing 7012510_Rev_K_B Doc ID 022849 Rev 4 13/22 Package mechanical data Table 10. STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5 I²PAK (TO-262) mechanical data mm. DIM. min. 14/22 typ max. A 4.40 4.60 A1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 D 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 E 10 10.40 L 13 14 L1 3.50 3.93 L2 1.27 1.40 Doc ID 022849 Rev 4 STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5 Package mechanical data Figure 26. I²PAK (TO-262) drawing 0004982_Rev_H Doc ID 022849 Rev 4 15/22 Package mechanical data Table 11. STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5 TO-220 type A mechanical data mm Dim. Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 16/22 Typ. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 022849 Rev 4 STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5 Package mechanical data Figure 27. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 022849 Rev 4 17/22 Packaging mechanical data 5 STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5 Packaging mechanical data Table 12. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. 18/22 Dim. Min. Max. Min. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 Doc ID 022849 Rev 4 Max. 330 13.2 26.4 30.4 STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5 Packaging mechanical data Figure 28. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F K0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Doc ID 022849 Rev 4 19/22 Packaging mechanical data STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5 Figure 29. Reel T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 20/22 Doc ID 022849 Rev 4 STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5 6 Revision history Revision history Table 13. Document revision history Date Revision Changes 06-Apr-2012 1 First release. 04-Jul-2012 2 Document status promoted from preliminary to production data. Added Section 2.1: Electrical characteristics (curves). 21-Aug-2012 3 Updated symbols and parameters in Table 6: Switching times. Minor text change on the cover page. 04-Dec-2012 4 The part number STW57N65M5 has been moved to a separate datasheet. Doc ID 022849 Rev 4 21/22 STB57N65M5, STF57N65M5, STI57N65M5, STP57N65M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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