STF5N52U

STD5N52U, STF5N52U N-channel 525 V, 1.25 Ω typ., 4.4 A UltraFASTmesh™ Power MOSFETs in DPAK and TO-220FP packages Datasheet - production data Features Order codes VDS RDS(on) max ID 525 V 1.5 Ω 4.4 A STD5N52U TAB PTOT 70 W STF5N52U • Outstanding dv/dt capability 3 1 3 • Gate charge minimized 2 DPAK 25 W 1 • Very low intrinsic capacitances TO-220FP • Very low RDS(on) • Extremely low trr Figure 1. Internal schematic diagram Applications • Switching applications D(2, TAB) Description These devices are N-channel Power MOSFETs developed using UltraFASTmesh™ technology, which combines the advantages of reduced onresistance, Zener gate protection and very high dv/dt capability with an enhanced fast body-drain recovery diode. G(1) S(3) AM01476v1 Table 1. Device summary Order codes Marking Package Packaging DPAK Tape and reel TO-220FP Tube STD5N52U 5N52U STF5N52U April 2014 This is information on a product in full production. DocID15684 Rev 3 1/19 www.st.com Contents STD5N52U, STF5N52U Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 3 Test circuits .............................................. 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 DPAK, STD5N52U . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 TO-220FP, STF5N52U . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/19 DocID15684 Rev 3 STD5N52U, STF5N52U 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit DPAK VGS TO-220FP Gate- source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 4.4 A ID Drain current (continuous) at TC = 100 °C 2.8 A Drain current (pulsed) 17.6 A IDM (1) PTOT Total dissipation at TC = 25 °C 70 25 W IAR Avalanche current, repetitive or not-repetitive (pulse width limited by TJ max) 4.4 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) 170 mJ Peak diode recovery voltage slope 20 V/ns ESD Gate-source human body model (R = 1.5 kΩ, C = 100 pF) 2.8 kV VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) dv/dt(2) TJ 2500 Operating junction temperature V °C -55 to 150 Tstg Storage temperature °C 1. Pulse width limited by safe operating area. 2. ISD ≤ 4.4 A, di/dt ≤ 400 A/μs, peak VDS ≤ V(BR)DSS Table 3. Thermal data Value Symbol Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Rthj-pcb(1) Thermal resistance junction-pcb Unit DPAK TO-220FP 1.79 5 °C/W 62.5 °C/W 50 °C/W 1. When mounted on 1 inch² FR-4 board, 2oz Cu DocID15684 Rev 3 3/19 19 Electrical characteristics 2 STD5N52U, STF5N52U Electrical characteristics (Tcase =25 °C unless otherwise specified). Table 4. On /off states Symbol V(BR)DSS IDSS IGSS Parameter Test conditions Drain-source breakdown voltage (VGS = 0) ID = 1 mA Min. Typ. V 10 μA 500 μA ±10 μA 3.75 4.5 V 1.25 1.5 Ω Min. Typ. Max. Unit - 529 - pF - 71 - pF - 13.4 - pF VGS = 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 50 μA RDS(on) Static drain-source onVGS = 10 V, ID = 2.2 A resistance Unit 525 VDS = 525 V Zero gate voltage drain current (VGS = 0) VDS = 525 V, TC=125 °C Gate-body leakage current (VDS = 0) Max. 3 Table 5. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Co(tr)(1) Equivalent capacitance time related VDS = 0 to 420 V, VGS = 0 - 11 - pF Rg Gate input resistance f=1 MHz open drain - 6 - Ω Qg Total gate charge - 16.9 - nC Qgs Gate-source charge - 4.2 - nC Qgd Gate-drain charge VDD = 416 V, ID = 4.4 A, VGS = 10 V (see Figure 17) - 8.4 - nC VDS = 25 V, f = 1 MHz, VGS = 0 1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/19 DocID15684 Rev 3 STD5N52U, STF5N52U Electrical characteristics Table 6. Switching times Symbol td(on) tr Parameter Test conditions tf Typ. - 11.4 - ns - 13.6 - ns - 23.1 - ns - 15 - ns Turn-on delay time VDD = 260 V, ID = 2.2 A, RG = 4.7 Ω, VGS = 10 V (see Figure 16) Rise time td(off) Min. Turn-off-delay time Fall time Max. Unit Table 7. Source drain diode Symbol ISD ISDM (1) VSD (2) Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 4.4 A Source-drain current (pulsed) - 17.6 A 1.6 V Forward on voltage ISD = 4.4 A, VGS = 0 - trr Reverse recovery time - 55 ns Qrr Reverse recovery charge - 95 nC IRRM Reverse recovery current ISD = 4.4 A, di/dt = 100 A/μs VDD= 60 V (see Figure 18) - 3.5 A - 120 ns - 266 nC - 4.5 A trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 4.4 A, di/dt = 100 A/μs VDD= 60 V TJ = 150 °C (see Figure 18) 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% Table 8. Gate-source Zener diode Symbol Parameter Test conditions V(BR)GSO Gate-source breakdown voltage IGS = ± 1mA, ID=0 Min Typ. Max. Unit 30 - - V The built-in back-to-back Zener diodes have specifically been designed to enhance the device's ESD capability. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. DocID15684 Rev 3 5/19 19 Electrical characteristics 2.1 STD5N52U, STF5N52U Electrical characteristics (curves) Figure 2. Safe operating area for DPAK Figure 3. Thermal impedance for DPAK Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Output characteristics Figure 7. Transfer characteristics 6/19 DocID15684 Rev 3 STD5N52U, STF5N52U Electrical characteristics Figure 8. Normalized V(BR)DSS vs temperature Figure 9. Static drain-source on-resistance (BR) Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature Figure 13. Normalized on-resistance vs temperature DocID15684 Rev 3 7/19 19 Electrical characteristics STD5N52U, STF5N52U Figure 14. Source-drain diode forward characteristics 8/19 Figure 15. Maximum avalanche energy vs temperature DocID15684 Rev 3 STD5N52U, STF5N52U 3 Test circuits Test circuits Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 18. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 19. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 DocID15684 Rev 3 10% AM01473v1 9/19 19 Package mechanical data 4 STD5N52U, STF5N52U Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 10/19 DocID15684 Rev 3 STD5N52U, STF5N52U 4.1 Package mechanical data DPAK, STD5N52U Figure 22. DPAK (TO-252) type A drawing B1 DocID15684 Rev 3 11/19 19 Package mechanical data STD5N52U, STF5N52U Table 9. DPAK (TO-252) type A mechanical data mm Dim. Min. Typ. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 (L1) 2.80 L2 0.80 L4 0.60 1.00 R V2 12/19 Max. 0.20 0° 8° DocID15684 Rev 3 STD5N52U, STF5N52U Package mechanical data Figure 23. DPAK (TO-252) type A footprint (a) )3B1 a. All dimensions are in millimeters DocID15684 Rev 3 13/19 19 Package mechanical data 4.2 STD5N52U, STF5N52U TO-220FP, STF5N52U Figure 24. TO-220FP drawing 7012510_Rev_K_B 14/19 DocID15684 Rev 3 STD5N52U, STF5N52U Package mechanical data Table 10. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Ø 3 3.2 DocID15684 Rev 3 15/19 19 Packaging mechanical data 5 STD5N52U, STF5N52U Packaging mechanical data Figure 25. Tape for DPAK (TO-252) 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 K0 For machine ref. only including draft and radii concentric around B0 W B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 16/19 DocID15684 Rev 3 STD5N52U, STF5N52U Packaging mechanical data Figure 26. Reel for DPAK (TO-252) T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius G measured at hub Tape slot in core for tape start 25 mm min. width AM08851v2 Table 11. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DocID15684 Rev 3 18.4 22.4 17/19 19 Revision history 6 STD5N52U, STF5N52U Revision history Table 12. Document revision history Date Revision 06-May-2009 1 First release. 2 – Inserted new device in I2PAK. – Updated tables 1, 2 and 3 with the new package. – Updated Section 4: Package mechanical data with the new package and Section 5: Packaging mechanical data. – Minor text changes. 28-Sep-2011 24-Apr-2014 18/19 3 Changes – – – – Updated Section 4.1: DPAK, STD5N52U Modified: Qrr unit in Table 7 Modified: Figure 8 and 11 The part number STI5N52U has been moved to a separate datasheet DocID15684 Rev 3 STD5N52U, STF5N52U Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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