STF5N80K5

STF5N80K5 N-channel 800 V, 1.50 Ω typ., 4 A MDmesh™ K5 Power MOSFET in a TO-220FP package Datasheet - production data Features      TO-220FP Order code VDS RDS(on) max. ID STF5N80K5 800 V 1.75 Ω 4A Industry’s lowest RDS(on) x area Industry’s best FoM (figure of merit) Ultra-low gate charge 100% avalanche tested Zener-protected Applications Figure 1: Internal schematic diagram D(2)  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. G(1) S(3) AM15572v1_no_tab Table 1: Device summary Order code Marking Package Packing STF5N80K5 5N80K5 TO-220FP Tube May 2016 DocID028509 Rev 3 This is information on a product in full production. 1/13 www.st.com Contents STF5N80K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 5 2/13 TO-220FP package information ...................................................... 10 Revision history ............................................................................ 12 DocID028509 Rev 3 STF5N80K5 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol VGS Parameter Value Unit ± 30 V ID Gate-source voltage Drain current (continuous) at TC = 25 °C 4 A ID Drain current (continuous) at TC = 100 °C 2.3 A Drain current (pulsed) 16 A W ID(1) PTOT Total dissipation at TC = 25 °C 20 dv/dt (2) Peak diode recovery voltage slope 4.5 dv/dt (3) MOSFET dv/dt ruggedness 50 Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s; TC= 25 °C) VISO Tj Operating junction temperature range Tstg Storage temperature range V/ns 2500 V - 55 to 150 °C Notes: (1)Pulse (2)I SD (3)V width limited by safe operating area ≤ 4 A, di/dt =100 A/μs; VDS peak < V(BR)DSS, VDD = 640 V DS ≤ 640 V Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 6.25 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 °C/W Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 1.2 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 165 mJ DocID028509 Rev 3 3/13 Electrical characteristics 2 STF5N80K5 Electrical characteristics TC = 25 °C unless otherwise specified Table 5: On/off-state Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions Min. VGS = 0 V, ID = 1 mA 800 Typ. Max. Unit V VGS = 0 V, VDS = 800 V 1 µA IDSS Zero gate voltage drain current VGS = 0 V, VDS = 800 V TC = 125 °C (1) 50 µA IGSS Gate body leakage current VDS = 0 V, VGS = ±20 V ±10 µA VGS(th) Gate threshold voltage VDD = VGS, ID = 100 µA 4 5 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 2 A 1.50 1.75 Ω Min. Typ. Max. Unit - 177 - pF - 15 - pF 3 Notes: (1)Defined by design, not subject to production test Table 6: Dynamic Symbol Ciss Parameter Test conditions Input capacitance VDS = 100 V, f = 1 MHz, VGS = 0 V Coss Output capacitance Crss Reverse transfer capacitance Co(tr)(1) Equivalent capacitance time related - 0.3 - pF - 33 - pf - 12 - pf VDS = 0 to 640 V, VGS = 0 V Co(er)(2) Equivalent capacitance energy related Rg Intrinsic gate resistance f = 1 MHz , ID= 0 A - 16 - Ω Qg Total gate charge - 5 - nC Qgs Gate-source charge - 1.7 - nC Qgd Gate-drain charge VDD = 640 V, ID = 4 A VGS= 10 V see Figure 15: "Test circuit for gate charge behavior" - 2.9 - nC Notes: (1)C o(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. (2)C o(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 4/13 DocID028509 Rev 3 STF5N80K5 Electrical characteristics Table 7: Switching times Symbol td(on) Parameter Turn-on delay time tr Rise time td(off) Turn-off delay time tf Fall time Test conditions Min. Typ. Max. Unit VDD= 400 V, ID = 2 A, RG = 4.7 Ω VGS = 10 V see Figure 14: "Test circuit for resistive load switching times" and Figure 19: "Switching time waveform" - 12.7 - ns - 11.7 - ns - 23 - ns - 14.8 - ns Min. Typ. Max. Unit Table 8: Source-drain diode Symbol ISD Parameter Test conditions Source-drain current - 4 A ISDM(1) Source-drain current (pulsed) - 16 A VSD(2) Forward on voltage ISD = 4 A, VGS = 0 V - 1.6 V Reverse recovery time ISD = 4 A, di/dt = 100 A/µs, VDD = 60 V see Figure 16: "Test circuit for inductive load switching and diode recovery times" - 265 ns - 1.59 µC - 12 A ISD = 4 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C see Figure 16: "Test circuit for inductive load switching and diode recovery times" - 386 ns - 2.18 µC - 11.3 A trr Qrr Reverrse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current Notes: (1)Pulse width limited by safe operating area (2)Pulsed: pulse duration = 300 µs, duty cycle 1.5% Table 9: Gate-source Zener diode Symbol V(BR)GSO Parameter Gate-source breakdown voltage Test conditions IGS= ± 1mA, ID= 0 A Min. Typ. Max. Unit 30 - - V The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry. DocID028509 Rev 3 5/13 Electrical characteristics 2.1 6/13 STF5N80K5 Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance DocID028509 Rev 3 STF5N80K5 Electrical characteristics Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Maximum avalanche energy vs starting TJ Figure 13: Source-drain diode forward characteristics DocID028509 Rev 3 7/13 Test circuits 3 STF5N80K5 Test circuits Figure 14: Test circuit for resistive load switching times Figure 15: Test circuit for gate charge behavior VDD RL IG= CONST VGS + pulse width 2200 μF 100 Ω D.U.T. 2.7 kΩ VG 47 kΩ 1 kΩ AM01469v10 Figure 16: Test circuit for inductive load switching and diode recovery times Figure 17: Unclamped inductive load test circuit Figure 18: Unclamped inductive waveform 8/13 DocID028509 Rev 3 Figure 19: Switching time waveform STF5N80K5 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID028509 Rev 3 9/13 Package information 4.1 STF5N80K5 TO-220FP package information Figure 20: TO-220FP package outline 10/13 DocID028509 Rev 3 STF5N80K5 Package information Table 10: TO-220FP package mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID028509 Rev 3 11/13 Revision history 5 STF5N80K5 Revision history Table 11: Document revision history Date Revision 16-Oct-2015 1 First release. 06-Nov-2015 2 Updated title in cover page. 3 Modified: title Table 2: "Absolute maximum ratings", Table 3: "Thermal data", Table 5: "On/off-state", Table 6: "Dynamic", Table 7: "Switching times", Table 8: "Source-drain diode" Added: Section 3.1: "Electrical characteristics (curves)" Modified: Section 4: "Test circuits" Minor text changes 09-May-2016 12/13 Changes DocID028509 Rev 3 STF5N80K5 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved DocID028509 Rev 3 13/13